HAL 150y. Approval Document. Hall-Effect Switches with Open-Drain Output (3-wire) in TO92 Package. DSH000185_002EN May 9, Hardware Documentation

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Hardware Documentation Approval Document DSH000185_002EN May 9, 2017 Advance Preliminary Data Sheet Information Data Sheet HAL 150y Hall-Effect Switches with Open-Drain Output (3-wire) in TO92 Package Edition Sept. May 9, 16, 25, 2017 2015 AI000198_002EN PD000184_001E DSH000185_002EN

Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of TDK-Micronas. All rights not expressly granted remain reserved by TDK-Micronas. TDK-Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, TDK-Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers technical experts. Any new issue of this document invalidates previous issues. TDK-Micronas reserves the right to review this document and to make changes to the document s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, military, aviation, or aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, TDK-Micronas products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of TDK-Micronas. TDK-Micronas Trademarks HAL Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 2

Contents Page Section Title 4 1. Introduction 5 1.1. Features of 6 2. Ordering Information 6 2.1. Device-Specific Ordering Codes 8 3. Functional Description of 9 3.1. Functional Safety According to ISO 26262 9 3.1.1. Diagnostic Features 10 3.2. Power-On Self-Test 12 4. Specifications 12 4.1. Outline Dimensions 16 4.2. Soldering, Welding and Assembly 16 4.3. Pin Connections (from Top Side, example HAL 1502) and Short Descriptions 16 4.4. Dimensions of Sensitive Area 17 4.5. Absolute Maximum Ratings 18 4.6. ESD and Latch-up 18 4.7. Storage and Shelf Life 19 4.8. Recommended Operating Conditions 20 4.9. Characteristics 22 4.10. HAL 1501 Magnetic Characteristics 24 4.11. HAL 1502 Magnetic Characteristics 26 4.12. HAL 1503 Magnetic Characteristics 28 4.13. HAL 1506 Magnetic Characteristics 30 4.14. HAL 1507 Magnetic Characteristics 32 4.15. HAL 1508 Magnetic Characteristics 34 4.16. HAL 1509 Magnetic Characteristics 36 5. Application Notes 36 5.1. Application Circuits 37 5.1.1. ESD System Level Application Circuit (ISO10605-2008) 38 5.2. Ambient Temperature 39 5.3. Start-Up Behavior 39 5.4. EMC and ESD 40 6. Document History TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 3

Hall-Effect Switches with Open-Drain Output (3-wire) in TO92 Package Release Note: Revision bars indicate significant changes to the previous edition 1. Introduction The Hall-switch family members produced in CMOS technology as 3-wire device with open-drain output transistor include a temperature-compensated Hall plate with active offset compensation, a comparator, and an output stage. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly the output transistor is switched on or off. The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects. The sensor is designed for industrial and automotive applications and operates with supply voltages from 2.7 V to 24 V in the junction temperature range from 40 C up to 170 C. is available in a TO92UA leaded package. TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 4

1.1. Features of TO92UA leaded package ISO 26262 compliant as ASIL A ready device Short-circuit protected open-drain output and thermal shutdown Low current consumption of typ. 1.6 ma Operates with supply voltages from 2.7 V to 24 V Overvoltage protection capability up to 40 V Reverse-voltage protected VSUP-pin ( 18 V) High ESD performance of ±8 kv (HBM) Diagnostic features: power-on self test Sample frequency of 500 khz, 2 µs output refresh time Operates with static and dynamic magnetic fields up to 12 khz High resistance to mechanical stress by active offset compensation Constant switching points over a wide supply voltage and temperature range Wide junction temperature range from 40 C to 170 C Built-in temperature coefficient Optimized for applications in extreme automotive and industrial environments Qualified according to AEC-Q100 test standard for automotive electronics industry to provide high-quality performance Robust EMC performance, corresponding to different standards, such as ISO 7637, ISO 16750, IEC 61967, ISO 11452, and ISO 62132 TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 5

2. Ordering Information A Micronas device is available in a variety of delivery forms. They are distinguished by a specific ordering code: XXX NNNN PA-T-C-P-Q-SP Fig. 2 1: Ordering Code Principle Further Code Elements Temperature Range Package Product Type Product Group For detailed information, please refer to the brochure: Sensors and Controllers: Ordering Codes, Packaging, Handling. 2.1. Device-Specific Ordering Codes is available in the following package and temperature range. Table 2 1: Available packages Package Code (PA) UA Package Type TO92UA Table 2 2: Available temperature ranges Temperature Code (T) Temperature Range A T J = 40 C to +170 C The relationship between ambient temperature (T A ) and junction temperature (T J ) is explained in Section 5.2. on page 38. For available variants for Configuration (C), Packaging (P), Quantity (Q), and Special Procedure (SP) please contact TDK-Micronas. TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 6

Table 2 3: Available ordering codes and corresponding package marking Available Ordering Codes HAL1501UA-A-[C-P-Q-SP] HAL1502UA-A-[C-P-Q-SP] HAL1503UA-A-[C-P-Q-SP] HAL1506UA-A-[C-P-Q-SP] HAL1507UA-A-[C-P-Q-SP] HAL1508UA-A-[C-P-Q-SP] HAL1509UA-A-[C-P-Q-SP] Package Marking 1501A 1502A 1503A 1506A 1507A 1508A 1509A TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 7

3. Functional Description of The sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. If the magnetic field exceeds the threshold levels, the output stage is switched to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of the output without bouncing. Offsets caused by mechanical stress are compensated by using the switching offset compensation technique. A diode on the supply line is not required thanks to the built-in reverse voltage protection. The open drain output is forced to a safe, High-Z (high-impedance) state, in any of the following fault conditions: overtemperature, undervoltage and functional safety related diagnoses (see Section 3.1.). In addition, the output current is limited (short-circuit protection). The device is able to withstand a maximum supply voltage of 24 V over lifetime and features overvoltage capability (40 V load dump). VSUP Reverse Voltage & ESD Protection Temperature Dependent Bias Hysteresis Control Short Circuit Overtemperature ESD Protection Hall Plate Comparator Filter Output OUT Functional Safety Features GND Fig. 3 1: block diagram TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 8

3.1. Functional Safety According to ISO 26262 The is ISO 26262 compliant as an ASIL A ready device. Magnetic and switching performance is defined as a hardware safety requirement. The safe state is defined as High-Z output. 3.1.1. Diagnostic Features Internal states are monitored and in an error condition flagged with a High-Z at the output: Internal voltage regulator: under and over voltage detection Monitoring of internal bias and current levels Monitoring of the internal reference voltage Monitoring of the Hall plate voltage Note For further documentation regarding functional safety please contact TDK-Micronas. TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 9

3.2. Power-On Self-Test The power-on self-test allows the customer to execute a functional check of the device, as well as to detect wire breaks as long as the host controls the power supply of the device. The self-test can be enabled only once after power-on. In order to start the test, the host has to power off the sensor and to pull down its output pin. Afterwards, the host needs to power on the sensor again (sensor in High-Z mode, after waking up) and then to release its output pin. This order of events is the criteria for the sensor to start the power-on self-test. After releasing the output pin, the sensor simulates a magnetic field for a pre-defined period of time (see first observation window in Fig. 3 2), driving the sensor s output to low level, detected by the host. Subsequently, the sensor simulates an opposite magnetic field during the second observation window (see Fig. 3 2), driving the sensor s output to high level, also detected by the host. The described self-test behavior is not impacted by external magnetic fields up to about 300 mt. After self-test completion, the sensor always returns to normal operation regardless of the test result. By positioning the pull-up resistor close to the control unit, wire breaks at all pins VSUP, OUT, and GND can be detected. It is also possible to enable the power-on self-test in application systems, consisting of several sensors, as long, as the output pins are not connected to each other. TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 10

V SUP t strtno V SUPsens t flxn 0V Host driver t strtp t strtn t flxp Sensor driver V IO Host sampling First window Second window Fig. 3 2: Self-test timing diagram Sensor Host VSUP OUT C p V SUPsens V IO V SUP R L SUPOUT I/O GND GND Fig. 3 3: External circuit diagram with switchable supply TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 11

0-0.5 solder or welding area L 3.2 max. 1.5 Y 5 DATA SHEET 4. Specifications 4.1. Outline Dimensions 5 around 45 gate remain L L Y A D Product long lead short lead HAL 15xy 21 0.2 optional 15.7 0.2 standard 1.0 0.3 0.05 0.2 4.06 0.05 D center of sensitive area 1.5 0.05 +0.2 1 0.7 ejector pin Ø1.5 3.05 0.05 A +0.1 0.5-0.08 1 2 3 1 0.2 around dambar cut, not Sn plated (6x) 0.36 0.05 Sn plated 0.43 0.05 Sn plated 1.27 0.4 1.27 0.4 lead length cut not Sn plated (3x) 0 2.5 5 mm scale Physical dimensions do not include moldflash. Sn-thickness might be reduced by mechanical handling. FRONT VIEW BACK VIEW PACKAGE TO92UA-2 ISSUE DATE JEDEC STANDARD (YY-MM-DD) ITEM NO. ISSUE ANSI REVISION DATE (YY-MM-DD) REV.NO. DRAWING-NO. 16-07-06 16-07-06 1 CUAI00031011.1 SPECIFICATION TYPE NO. ZG 2055_Ver.01 c Copyright 2016 Micronas GmbH, all rights reserved Fig. 4 1: TO92UA-2: Plastic Transistor Standard UA package, 3 leads, non-spread Weight approximately 0.106 g TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 12

Δh Δp Δh Δp H1 H W2 A B feed direction T1 W L W1 P2 P0 F1 D0 F2 view A-B T W0 all dimensions in mm H H1 other dimensions see drawing of bulk TO92UA TO92UT Short leads 18-20 21-23.1 max. allowed tolerance over 20 hole spacings ±1.0 22-24.1 Long leads 24-26 27-29.1 28-30.1 UNIT D0 F1 F2 Δh L P0 P2 Δp T T1 W W0 W1 W2 mm 4.0 1.47 1.07 1.47 1.07 ±1.0 11.0 max 13.2 12.2 7.05 5.65 ±1.0 0.5 0.9 18.0 6.0 9.0 0.3 ISSUE STANDARD ITEM NO. ANSI ISSUE DATE YY-MM-DD DRAWING-NO. ZG-NO. - IEC 60286-2 16-07-18 06631.0001.4 ZG001031_Ver.05 Copyright 2007 Micronas GmbH, all rights reserved Fig. 4 2: TO92UA/UT: Dimensions ammopack inline, non-spread TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 13

0-0.5 1.5 L +0.26 3.2 max. Y 5 DATA SHEET 5 around 45 gate remain L L Y A D Product long lead short lead HAL 15xy 21 0.2 optional 15.7 0.2 standard 1.0 0.3 0.05 0.2 4.06 0.05 1 + 0.2 D center of sensitive area 1.5 0.05 0.7 ejector pin Ø1.5 +0.1 0.5-0.08 dambar cut, not Sn plated (6x) 1 2 3 solder or welding area 1 0.2 3.05 0.05 A around 0.36 0.05 Sn plated 3.74-0.74 0.43 0.05 Sn plated 2.54 0.4 2.54 0.4 lead length cut not Sn plated (3x) 0 2.5 5 mm scale Physical dimensions do not include moldflash. Sn-thickness might be reduced by mechanical handling. FRONT VIEW BACK VIEW PACKAGE ISSUE DATE (YY-MM-DD) JEDEC STANDARD ITEM NO. ISSUE ANSI REVISION DATE (YY-MM-DD) REV.NO. DRAWING-NO. SPECIFICATION TYPE NO. TO92UA-1 16-07-06 16-07-06 1 CUAS00031013.1 ZG 2057_Ver.01 c Copyright 2016 Micronas GmbH, all rights reserved Fig. 4 3: TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread Weight approximately 0.106 g TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 14

Δh Δp Δh Δp H1 H W2 A B feed direction T1 W L W1 P2 P0 F1 D0 F2 view A-B T W0 all dimensions in mm other dimensions see drawing of bulk max. allowed tolerance over 20 hole spacings ±1.0 Short leads Long leads H H1 TO92UA TO92UT 18-20 21-23.1 22-24.1 24-26 27-29.1 28-30.1 UNIT D0 F1 F2 Δh L P0 P2 Δp T T1 W W0 W1 W2 mm 4.0 2.74 2.34 2.74 2.34 ±1.0 11.0 max 13.2 12.2 7.05 5.65 ±1.0 0.5 0.9 18.0 6.0 9.0 0.3 ISSUE JEDEC STANDARD ITEM NO. ANSI ISSUE DATE YY-MM-DD DRAWING-NO. ZG-NO. - ICE 60286-2 16-07-18 06632.0001.4 ZG001032_Ver.06 Copyright 2007 Micronas GmbH, all rights reserved Fig. 4 4: TO92UA/UT: Dimensions ammopack inline, spread TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 15

4.2. Soldering, Welding and Assembly Information related to solderability, welding, assembly, and second-level packaging is included in the document Guidelines for the Assembly of Micronas Packages. It is available on the TDK-Micronas website (http://www.micronas.com/en/servicecenter/downloads) or on the service portal (http://service.micronas.com). 4.3. Pin Connections (from Top Side, example HAL 1502) and Short Descriptions 1502A 1 2 3 VSUP GND OUT 1 VSUP 3 OUT 2 GND Fig. 4 5: Pin configuration Table 4 1: Pin assignment. Pin number Name Function 1 VSUP Supply voltage 2 GND Ground 3 OUT Output 4.4. Dimensions of Sensitive Area Parameter Min. Typ. Max. Unit Dimension of sensitive area 100 x 100 µm 2 TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 16

4.5. Absolute Maximum Ratings Stresses beyond those listed in the Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No Min. Max. Unit Conditions V SUP Supply voltage 1 18 28 V t < 96 h 1) 32 V t<5 min 1) T J Junction temperature range A 40 V t < 10 x 400 ms Load-Dump 1) with series resistor R V > 100. 40 190 C t < 96 h 1) T STORAGE Transportation/Short-Term 55 150 C Storage Temperature V OUT Output voltage 3 0.5 28 V t < 96 h 1) I O Output current 3 65 ma I OR Reverse output current 3 50 ma 1) No cumulative stress TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 17

4.6. ESD and Latch-up The output pin has to be in High-Z for ESD measurements. Table 4 2: ESD and latch-up Symbol Parameter Min. Max. Unit I latch Maximum latch-up free current at any pin (measurement according to AEC Q100-004), class 1 100 100 ma V HBM Human body model (according to AEC Q100-002) 8 8 kv V CDM Charged device model (according to AEC Q100-011) 1 1 kv V SYSTEM_LEVEL Unpowered Gun Test (150 pf / 330 or 330 pf / 2 k ) 15 15 kv according to ISO 10605-2008 1) 1) only valid with ESD System Level Application Circuit (see Fig. 5 2 on page 37) 4.7. Storage and Shelf Life Information related to storage conditions of Micronas sensors is included in the document Guidelines for the Assembly of Micronas Packages. It gives recommendations linked to moisture sensitivity level and long-term storage. It is available on the TDK-Micronas website (http://www.micronas.com/en/servicecenter/downloads) or on the service portal (http://service.micronas.com). TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 18

4.8. Recommended Operating Conditions Functional operation of the device beyond those indicated in the Recommended Operating Conditions of this specification is not implied, may result in unpredictable behavior of the device, and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No Min. Typ. Max. Unit Conditions V SUP Supply voltage 1 2.7 24 V V SUP / t Power-down slope 1) 1 0.1 V/µs V SUP below 2.7 V T J Junction temperature 40 170 range A 2) 150 125 C t < 1000 h 3) t < 2500 h 3) t < 8000 h 3) V OUT Output voltage 3 24 V I OUT Output current 3 25 ma 1) This parameter is relevant for ISO26262 applications: In order to ensure the defined output state (High-Z) during power-up in the range below the recommended supply voltage, the preceding power down slope is required to be slower than the maximum V SUP / t value. 2) Depends on the temperature profile of the application. Please contact TDK-Micronas for life time calculations. 3) No cumulative stress TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 19

4.9. Characteristics at T J = 40 C to +170 C, V SUP = 2.7 V to 24 V, at Recommended Operating Conditions if not otherwise specified in the column Conditions. Typical Characteristics for T J = 25 C and V SUP = 12 V Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions Supply I SUP Supply current 1 1.1 1.6 2.4 ma I SUPR Reverse current 1 1 ma for V SUP = -18 V Port Output V ol Port low output voltage 3 0.13 0.4 V I O = 20 ma I oleak Output leakage current 0.1 10 µa 0.5 V I O = 25 ma t f Output fall time 1) 1 µs V SUP =12V; t r Output rise time 1) 1 µs R L =820 ; C L =20pF B noise Effective noise of magnetic switching points (RMS) 2) 72 µt For square wave signal with 12 khz t j Output jitter (RMS) 1) 0.58 0.72 µs For square wave signal with 1 khz. Jitter is evenly distributed between 1 µs and +1 µs t d Delay time 2) 3) 16 21 µs t samp Output refresh period 2) 1.6 2.2 3.0 µs t en Enable time of output after settling of V SUP 4) 50 60 µs V SUP = 12 V B>B on +2mT or B<B off -2mT 1) Not tested, characterized only 2) Guaranteed by design 3) Systematic delay between magnetic threshold reached and output switching 4) If power-on self-test is executed, t en will be extended by power-on self-test period (see Section 3.2. on page 10) TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 20

Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions Power-on Self-Test t dsamp Double sample period 2) 3.2 4.4 6.0 µs t strtp t flxp t strtn t flxn t strtno Start of first sampling 4 t dsamp window 2) End of first sampling 9 t dsamp window 2) Start of second sampling 10 t dsamp 2) window End of second sampling 31 t dsamp 2) window Start of first normal 36.5 37 t dsamp operation value 2) Package R thja R thjc Thermal Resistance junction to air Thermal Resistance junction to case 234 K/W Determined with a 1s0p board 180 K/W Determined with a 1s1p board 159 K/W Determined with a 2s2p board 58 K/W Determined with a 1s0p board 55 K/W Determined with a 1s1p board 53 K/W Determined with a 2s2p board 2) Guaranteed by design TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 21

4.10. HAL 1501 Magnetic Characteristics The HAL 1501 bipolar Hall-switch provides highest sensitivity (see Fig. 4 6 on page 22). The output turns low with the magnetic south pole on the top side of the package and turns high with the magnetic north pole on the top side. The output state is not defined if the magnetic field is removed again. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the top side of the package. Magnetic Features: switching type: bipolar very high sensitivity typical B ON : 0.4 mt at room temperature typical B OFF : 0.4 mt at room temperature operates with static magnetic fields and dynamic magnetic fields up to 12 khz typical temperature coefficient of magnetic switching points is 0 ppm/k at room temperature Applications The HAL 1501 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: applications with large air gap or weak magnets revolutions per minute (RPM) or other counting measurement, e.g. window lifter and sunroof commutation of brushless DC motors position detection, such as for gear-shift lever and electric parking brake magnetic encoders Output Voltage High-Z B HYS Low-Z B OFF 0 B ON B Fig. 4 6: Definition of magnetic switching points for the HAL 1501 TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 22

Magnetic Characteristics at T J = 40 C to +170 C, V DD = 2.7 V to 24 V, Typical Characteristics for V DD = 12 V Magnetic flux density values of switching points: Positive flux density values refer to the magnetic south pole at the top side of the package. Parameter On point B ON Off point B OFF Hysteresis B HYS Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 40 C 0.6 0.5 1.6 1.6 0.5 0.6 1.0 mt 25 C 0.5 0.4 1.5 1.5 0.4 0.5 0.8 mt 170 C 1 0.35 2 2 0.35 1 0.7 mt The hysteresis is the difference between the switching points B HYS = B ON B OFF Note Regarding switching points, temperature coefficients, and B-field switching frequency, customized derivatives via mask option are possible. For more information contact TDK-Micronas. TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 23

4.11. HAL 1502 Magnetic Characteristics The HAL 1502 Hall-latch provides highest sensitivity (see Fig. 4 7 on page 25). The output turns low with the magnetic south pole on the top side of the package and turns high with the magnetic north pole on the top side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the top side of the package. Magnetic Features: switching type: latching high sensitivity typical B ON : 2.5 mt at room temperature typical B OFF : 2.5 mt at room temperature operates with static magnetic fields and dynamic magnetic fields up to 12 khz typical temperature coefficient of magnetic switching points is 1000 ppm/k at room temperature Applications The HAL 1502 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: applications with large air gap or weak magnets revolutions per minute (RPM) or other counting measurement, e.g. window lifter and sunroof commutation of brushless DC motors position detection, such as for adaptive front lighting and electric parking brake magnetic encoders TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 24

High-Z Output Voltage B HYS Low-Z B OFF 0 B ON B Fig. 4 7: Definition of magnetic switching points for the HAL 1502 Magnetic Characteristics at T J = 40 C to +170 C, V DD = 2.7 V to 24 V, Typical Characteristics for V DD = 12 V Magnetic flux density values of switching points: Positive flux density values refer to the magnetic south pole at the top side of the package. Parameter On point B ON Off point B OFF Hysteresis B HYS Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 40 C 1.3 2.8 4.3 4.3 2.8 1.3 5.6 mt 25 C 1 2.5 4 4 2.5 1 5 mt 170 C 0.8 2.3 3.8 3.8 2.3 0.8 4.6 mt The hysteresis is the difference between the switching points B HYS = B ON B OFF Note Regarding switching points, temperature coefficients, and B-field switching frequency, customized derivatives via mask option are possible. For more information contact TDK-Micronas. TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 25

4.12. HAL 1503 Magnetic Characteristics The HAL 1503 unipolar Hall-switch provides high sensitivity (see Fig. 4 8 on page 26). The output turns low with the magnetic south pole on the top side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the top side of the package. For correct functioning in the application, the sensor requires only the magnetic south pole on the top side of the package. Magnetic Features: switching type: unipolar high sensitivity typical B ON : 5.5 mt at room temperature typical B OFF : 3.7 mt at room temperature operates with static magnetic fields and dynamic magnetic fields up to 12 khz typical temperature coefficient of magnetic switching points is 1000 ppm/k at room temperature Applications The HAL 1503 is the optimal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position, such as: clutch position detection electric parking brake brake light switch brake pedal position detection steering wheel lock door handle Output Voltage High-Z B HYS Low-Z 0 B OFF B ON B Fig. 4 8: Definition of magnetic switching points for the HAL 1503 TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 26

Magnetic Characteristics at T J = 40 C to +170 C, V DD = 2.7 V to 24 V, Typical Characteristics for V DD = 12 V Magnetic flux density values of switching points: Positive flux density values refer to the magnetic south pole at the top side of the package. Parameter On point B ON Off point B OFF Hysteresis B HYS Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 40 C 4.4 6.1 7.6 2.4 4 5.7 2.1 mt 25 C 3.8 5.5 7.1 2.1 3.7 5.5 1.8 mt 170 C 3 5 6.7 1.8 3.6 5.5 1.4 mt The hysteresis is the difference between the switching points B HYS = B ON B OFF Note Regarding switching points, temperature coefficients, and B-field switching frequency, customized derivatives via mask option are possible. For more information contact TDK-Micronas. TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 27

4.13. HAL 1506 Magnetic Characteristics The HAL 1506 unipolar Hall-switch provides medium sensitivity (see Fig. 4 9 on page 28). The output turns low with the magnetic south pole on the top side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the top side of the package. For correct functioning in the application, the sensor requires only the magnetic south pole on the top side of the package. Magnetic Features: switching type: unipolar medium sensitivity typical B ON : 18.9 mt at room temperature typical B OFF : 17.3 mt at room temperature operates with static magnetic fields and dynamic magnetic fields up to 12 khz typical temperature coefficient of magnetic switching points is 1200 ppm/k at room temperature Applications The HAL 1506 is the optimal sensor for applications with one magnetic polarity, such as: clutch pedal position wiper position door lock trunk lock Output Voltage High-Z B HYS Low-Z 0 B OFF B ON B Fig. 4 9: Definition of magnetic switching points for the HAL 1506 TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 28

Magnetic Characteristics at T J = 40 C to +170 C, V DD = 2.7 V to 24 V, Typical Characteristics for V DD = 12 V Magnetic flux density values of switching points: Positive flux density values refer to the magnetic south pole at the top side of the package. Parameter On point B ON Off point B OFF Hysteresis B HYS Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 40 C 16.5 20.8 24.8 14 18.9 22.5 1.9 mt 25 C 15.4 18.9 22.6 13.8 17.3 21 1.6 mt 170 C 13 17 19.5 11.8 15.8 18.2 1.2 mt The hysteresis is the difference between the switching points B HYS = B ON B OFF Note Regarding switching points, temperature coefficients, and B-field switching frequency, customized derivatives via mask option are possible. For more information contact TDK-Micronas. TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 29

4.14. HAL 1507 Magnetic Characteristics The HAL 1507 unipolar Hall-switch provides low sensitivity (see Fig. 4 10 on page 31). The output turns low with the magnetic south pole on the top side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the top side of the package. For correct functioning in the application, the sensor requires only the magnetic south pole on the top side of the package. Magnetic Features: switching type: unipolar low sensitivity typical B ON : 28.2 mt at room temperature typical B OFF : 23.9 mt at room temperature operates with static magnetic fields and dynamic magnetic fields up to 12 khz typical temperature coefficient of magnetic switching points is 300 ppm/k at room temperature Applications The HAL 1507 is the optimal sensor for applications with one magnetic polarity and strong magnetic fields at the sensor position, such as: gear position detection rooftop open/close sliding door TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 30

Output Voltage High-Z B HYS Low-Z 0 B OFF B ON B Fig. 4 10: Definition of magnetic switching points for the HAL 1507 Magnetic Characteristics at T J = 40 C to +170 C, V DD = 2.7 V to 24 V, Typical Characteristics for V DD = 12 V Magnetic flux density values of switching points: Positive flux density values refer to the magnetic south pole at the top side of the package. Parameter On point B ON Off point B OFF Hysteresis B HYS Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 40 C 24 29.5 35 18.7 24.7 30.7 4.8 mt 25 C 23.7 28.2 32.7 19 23.9 28.8 4.3 mt 170 C 22.5 27.7 32.9 18.6 23.9 29.2 3.8 mt The hysteresis is the difference between the switching points B HYS = B ON B OFF Note Regarding switching points, temperature coefficients, and B-field switching frequency, customized derivatives via mask option are possible. For more information contact TDK-Micronas. TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 31

4.15. HAL 1508 Magnetic Characteristics The HAL 1508 a high-sensitive unipolar switch sensor only sensitive to the magnetic north polarity (see Fig. 4 11 on page 33). The output turns low with the magnetic north pole on the top side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic south pole. For correct functioning in the application, the sensor requires only the magnetic north pole on the top side of the package. Magnetic Features: switching type: unipolar high sensitivity typical B ON : 5.5 mt at room temperature typical B OFF : 3.7 mt at room temperature operates with static magnetic fields and dynamic magnetic fields up to 12 khz typical temperature coefficient of magnetic switching points is 1000 ppm/k at room temperature Applications The HAL 1508 is the optimal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position. In combination with HAL 1503 it is often used for clutch pedal position detection, for instance. Other examples are: electric parking brake wiper position door lock TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 32

Output Voltage High-Z B HYS Low-Z B ON B OFF 0 B Fig. 4 11: Definition of magnetic switching points for the HAL 1508 Magnetic Characteristics at T J = 40 C to +170 C, V DD = 2.7 V to 24 V, Typical Characteristics for V DD = 12 V Magnetic flux density values of switching points: Positive flux density values refer to the magnetic south pole at the top side of the package. Parameter On point B ON Off point B OFF Hysteresis B HYS Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 40 C 7.6 6.1 4.4 5.7 4 2.4 2.1 mt 25 C 7.1 5.5 3.8 5.5 3.7 2.1 1.8 mt 170 C 6.7 5 3 5.5 3.6 1.8 1.4 mt The hysteresis is the difference between the switching points B HYS = B ON B OFF Note Regarding switching points, temperature coefficients, and B-field switching frequency, customized derivatives via mask option are possible. For more information contact TDK-Micronas. TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 33

4.16. HAL 1509 Magnetic Characteristics The HAL 1509 unipolar inverted Hall-switch provides high sensitivity (see Fig. 4 12 on page 35). The output turns high with the magnetic south pole on the top side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the top side of the package. For correct functioning in the application, the sensor requires only the magnetic south pole on the top side of the package. Magnetic Features: switching type: unipolar inverted high sensitivity typical B ON : 3.7 mt at room temperature typical B OFF : 5.5 mt at room temperature operates with static magnetic fields and dynamic magnetic fields up to 12 khz typical temperature coefficient of magnetic switching points is 1000 ppm/k at room temperature Applications The HAL 1509 is the optimal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position where an inverted output signal is required, such as: electric valve actuation door lock brake position detection TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 34

Output Voltage High-Z B HYS Low-Z 0 B ON B OFF B Fig. 4 12: Definition of magnetic switching points for the HAL 1509 Magnetic Characteristics at T J = 40 C to +170 C, V DD = 2.7 V to 24 V, Typical Characteristics for V DD = 12 V Magnetic flux density values of switching points: Positive flux density values refer to the magnetic south pole at the top side of the package. Parameter On point B ON Off point B OFF Hysteresis B HYS Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 40 C 2.4 4 5.7 4.4 6.1 7.6 2.1 mt 25 C 2.1 3.7 5.5 3.8 5.5 7.1 1.8 mt 170 C 1.8 3.6 5.5 3 5 6.7 1.4 mt The hysteresis is the difference between the switching points B HYS = B ON B OFF Note Regarding switching points, temperature coefficients, and B-field switching frequency, customized derivatives via mask option are possible. For more information contact TDK-Micronas. TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 35

5. Application Notes 5.1. Application Circuits For applications with disturbances on the supply line or radiated disturbances, a series resistor R V and two capacitors C P and C L all placed close to the sensor are recommended (see Fig. 5 1). For example: R V =100 C P = 10 nf, and C L = 4.7 nf. V SUP R V R L OUT C P C L GND GND Fig. 5 1: Example for a recommended application circuit R L is the open-drain pull-up resistor and has to be placed close to the input of the host controller to enable wire-break detection. TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 36

5.1.1. ESD System Level Application Circuit (ISO10605-2008) For an ESD system level application circuit according to ISO10605-2008 a 100 nf capacitor at VSUP and an additional TVS diode at OUT are necessary. V SUP R V =100 1) R L C P = 100 nf OUT GND TVS Diode 24 V 1) required for 40 V load dump capability Fig. 5 2: Application circuit with external resistor TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 37

5.2. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature T J ) is higher than the temperature outside the package (ambient temperature T A ). T J = T A + T Under static conditions and continuous operation, the following equation applies: T = I SUP V SUP R thja + I OUT V OUT R thja For all sensors, the junction temperature range T J is specified. The maximum ambient temperature T Amax can be calculated as: T Amax = T Jmax T For typical values, use the typical parameters. For worst case calculation, use the max. parameters for I SUP, I OUT, and R thja, and the max. value for V OUT and V SUP from the application. TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 38

5.3. Start-Up Behavior The sensors have an initialization time (enable time t en ) after applying the supply voltage. The parameter t en is specified in the Electrical Characteristics (see page 20). During the initialization time, the output state is defined as High-Z. After t en, the output will be Low-Z if the applied magnetic field B is above B ON. The output will be High-Z if B is below B OFF. In case of sensors with an inverted switching behavior, the output state will be high if B > B OFF and low if B < B ON. Note For non-inverting ICs and magnetic fields between B OFF and B ON after applying V SUP, the output state of the device will be High-Z. For inverting and north-pole sensitive ICs and magnetic fields between B OFF and B ON after applying V SUP, the output state of the device will be Low-Z. For further information see Application Notes for HAL 15xy. 5.4. EMC and ESD For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended. The series resistor and the capacitor should be placed as close as possible to the HAL sensor. Special application arrangements were evaluated to pass EMC tests according to different standards, such as ISO 7637, ISO 16750, IEC 61967, ISO 11452 and ISO 62132. TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 39

6. Document History 1. Advance Information:, Hall-Effect Switch with Open-Drain Output (3-wire) in TO92 Package, Feb. 25, 2016; AI000185_001EN. First release of the Advance Information. 2. Advance Information:, Hall-Effect Switch with Open-Drain Output (3-wire) in TO92 Package, Aug. 5, 2016; AI000185_002EN. Second release of the Advance Information. Major changes: Package drawings updated 3. Data Sheet:, Hall-Effect Switch with Open-Drain Output (3-wire) in TO92 Package, Nov. 28, 2016; DSH000185_001EN. First release of the Data Sheet. 4. Data Sheet:, Hall-Effect Switch with Open-Drain Output (3-wire) in TO92 Package, May 16, 2017; DSH000185_002EN. Second release of the Data Sheet. Major changes: Pin connection information corrected Storage temperature range added TDK-Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com TDK-Micronas GmbH May 16, 2017; DSH000185_002EN 40