MOSFET 7VCoolMOSªP7PowerTransistor CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies. ThelatestCoolMOS P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,tv,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof thearteaseofuselevel.thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns. PGTO22FP Features ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss Excellentthermalbehavior IntegratedESDprotectiondiode Lowswitchinglosses(Eoss) Productvalidationacc.JEDECStandard Benefits Costcompetitivetechnology Lowertemperature HighESDruggedness Enablesefficiencygainsathigherswitchingfrequencies Enableshighpowerdensitydesignsandsmallformfactors Potentialapplications RecommendedforFlybacktopologiesforexampleusedinChargers, Adapters,LightingApplications,etc. Gate Pin 1 Drain Pin 2, Tab Source Pin 3 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25 C 7 V RDS(on),max.36 Ω Qg,typ 16.4 nc ID,pulse 34 A Eoss @ 4V 1.8 µj V(GS)th,typ 3 V ESD class (HBM) 2 Type/OrderingCode Package Marking RelatedLinks PGTO 22 FullPAK 7S36P7 see Appendix A 1 Rev.2.1,218212
TableofContents Description............................................................................. 1 Maximum ratings........................................................................ 3 Thermal characteristics.................................................................... 3 Electrical characteristics................................................................... 4 Electrical characteristics diagrams........................................................... 6 Test Circuits........................................................................... Package Outlines....................................................................... 11 Appendix A............................................................................ 12 Revision History........................................................................ 13 Trademarks........................................................................... 13 Disclaimer............................................................................ 13 2 Rev.2.1,218212
1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 12.5 7.5 A TC = 2 C TC = C Pulsed drain current 2) ID,pulse 34. A TC=25 C Application (Flyback) relevant avalanche current, single pulse 3) IAS 4.5 A MOSFET dv/dt ruggedness dv/dt V/ns VDS=...4V Gate source voltage VGS 16 3 16 3 V measured with standard leakage inductance of transformer of µh static; AC (f>1 Hz) Power dissipation Ptot 26.5 W TC=25 C Operating and storage temperature Tj,Tstg 4 15 C Continuous diode forward current IS 5.7 A TC=25 C Diode pulse current 2) IS,pulse 34. A TC = 25 C Reverse diode dv/dt 4) dv/dt 1 V/ns VDS=...4V,ISD<=IS,Tj=25 C Maximum diode commutation speed 4) dif/dt 5 A/µs VDS=...4V,ISD<=IS,Tj=25 C Insulation withstand voltage VISO 25 V Vrms, TC=25 C, t=1min 2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction RthJC 4.7 C/W Thermal resistance, junction ambient RthJA 8 C/W leaded Thermal resistance, junction ambient for SMD version Soldering temperature, wavesoldering only allowed at leads RthJA C/W n.a. Tsold 26 C 1.6 mm (.63 in.) from case for s 1) DPAK / IPAK equivalent. Limited by Tj max. Tj = 2 C. Maximum duty cycle D=.5 2) Pulse width tp limited by Tj,max 3) Proven during verification test. For explanation please read AN CoolMOS TM 7V P7. 4) VDClink=4V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 3 Rev.2.1,218212
3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 7 V VGS=V,ID=1mA Gate threshold voltage V(GS)th 2.5 3 3.5 V VDS=VGS,ID=.15mA Zero gate voltage drain current IDSS 1 µa VDS=7V,VGS=V,Tj=25 C VDS=7V,VGS=V,Tj=15 C Gatesource leakage current incl. Zener IGSS 1 µa VGS=2V,VDS=V diode Drainsource onstate resistance RDS(on).3.67.36 Ω VGS=V,ID=3.A,Tj=25 C VGS=V,ID=3.A,Tj=15 C Gate resistance RG 3 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 517 pf VGS=V,VDS=4V,f=25kHz Output capacitance Coss 11 pf VGS=V,VDS=4V,f=25kHz Effective output capacitance, energy related 1) Co(er) 27 pf VGS=V,VDS=...4V Effective output capacitance, time related 2) Co(tr) 329 pf ID=constant,VGS=V,VDS=...4V Turnon delay time td(on) 19 ns Rise time tr 8 ns Turnoff delay time td(off) ns Fall time tf 18 ns VDD=4V,VGS=13V,ID=2.3A, RG=5.3Ω VDD=4V,VGS=13V,ID=2.3A, RG=5.3Ω VDD=4V,VGS=13V,ID=2.3A, RG=5.3Ω VDD=4V,VGS=13V,ID=2.3A, RG=5.3Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 2.3 nc VDD=4V,ID=2.3A,VGS=toV Gate to drain charge Qgd 6. nc VDD=4V,ID=2.3A,VGS=toV Gate charge total Qg 16.4 nc VDD=4V,ID=2.3A,VGS=toV Gate plateau voltage Vplateau 4.4 V VDD=4V,ID=2.3A,VGS=toV 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto4V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromto4V 4 Rev.2.1,218212
Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=3.8A,Tj=25 C Reverse recovery time trr 2 ns VR=4V,IF=2.3A,diF/dt=5A/µs Reverse recovery charge Qrr 1 µc VR=4V,IF=2.3A,diF/dt=5A/µs Peak reverse recovery current Irrm A VR=4V,IF=2.3A,diF/dt=5A/µs 5 Rev.2.1,218212
4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 4 Diagram2:Safeoperatingarea 2 35 µs 1 µs 3 1 µs 25 1 ms Ptot[W] 2 ID[A] ms 15 1 2 DC 5 25 5 75 125 15 TC[ C] Ptot=f(TC) 3 1 2 3 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp Diagram3:Safeoperatingarea 2 Diagram4:Max.transientthermalimpedance 1 1 µs 1 µs µs.5 ID[A] 1 1 ms ms ZthJC[K/W].2.1.5 2 DC.2.1 single pulse 3 1 2 3 VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp 1 5 4 3 2 1 tp[s] ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.1,218212
Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 4 35 2 V V 8 V 3 25 2 V V 8 V 7 V 3 7 V ID[A] 25 2 6 V ID[A] 2 15 6 V 5.5 V 15 5.5 V 5 V 5 5 V 4.5 V 5 4.5 V 5 15 2 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 5 15 2 VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance 2. Diagram8:Drainsourceonstateresistance 1. 1.8.9 1.6 6.5 V.8 1.4 1.2 5 V 5.5 V 6 V 7 V.7.6 RDS(on)[Ω] 1..8 V RDS(on)[Ω].5.4 98% typ.6.3.4.2.2.. 2 3 ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS. 5 25 25 5 75 125 15 Tj[ C] RDS(on)=f(Tj);ID=3.A;VGS=V 7 Rev.2.1,218212
Diagram9:Typ.transfercharacteristics 4 Diagram:Typ.gatecharge 35 9 3 25 C 8 7 12 V 25 6 4 V ID[A] 2 15 C VGS[V] 5 15 4 3 2 5 1 2 4 6 8 12 VGS[V] ID=f(VGS);VDS=2V;parameter:Tj 5 15 2 Qgate[nC] VGS=f(Qgate);ID=2.3Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 2 25 C 125 C Diagram13:Drainsourcebreakdownvoltage 84 82 8 78 1 76 IF[A] VBR(DSS)[V] 74 72 7 68 66 64 62 1..5 1. 1.5 2. VSD[V] IF=f(VSD);parameter:Tj 6 75 5 25 25 5 75 125 15 175 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 8 Rev.2.1,218212
Diagram14:Typ.capacitances 4 Diagram15:Typ.Cossstoredenergy 4. 3.5 3 Ciss 3. 2 2.5 C[pF] 1 Coss Eoss[µJ] 2. 1.5 Crss 1..5 1 2 3 4 5 VDS[V] C=f(VDS);VGS=V;f=25kHz. 2 3 4 5 6 7 VDS[V] Eoss=f(VDS) 9 Rev.2.1,218212
5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V DS R g 2 I F R g 1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform V DS 9% V DS V GS V GS % t d(on) t r t d(off) t f t on t off TableUnclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V DS I D V DS Rev.2.1,218212
6PackageOutlines DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. DIM MILLIMETERS INCHES MIN MAX MIN MAX A 4.5 4.9.177.193 A1 2.34 2.8.92.1 A2 2.42 2.86.95.113 b.65.9.26.35 b1.95 1.38.37.54 b2 1.2 1.5.47.59 b3.65 1.38.26.54 b4 1.2 1.5.47.59 c D D1 E e e1 N H L L1 øp Q.4.63 15.67 16.15 8.97 9.83..65 2.54 (BSC) 28.7 12.78 2.83 3. 3.15 5.8 3 29.75 13.75 3.45 3.38 3.5.16.617.353.394 1.13.53.111.118.124.387.419. (BSC).2 3.25.636 1.171.541.136.133.138 DOCUMENT NO. Z8B181328 SCALE 2.5 EUROPEAN PROJECTION 2.5 ISSUE DATE 294216 REVISION 1 5mm Figure1OutlinePGTO22FullPAK,dimensionsinmm/inches 11 Rev.2.1,218212
7AppendixA Table11RelatedLinks IFXCoolMOSªP7Webpage:www.infineon.com IFXDesigntools:www.infineon.com 12 Rev.2.1,218212
RevisionHistory Revision:218212,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2. 21611 Release of final version 2.1 218212 Corrected front page text TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust215 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 218InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 13 Rev.2.1,218212