MOSFET OptiMOS TM PowerTransistor,6V SuperSO8 Features OptimizedforhighperformanceSMPS,e.g.sync.rec. %avalanchetested Superiorthermalresistance Nchannel QualifiedaccordingtoJEDEC ) fortargetapplications Pbfreeleadplating;RoHScompliant HalogenfreeaccordingtoIEC624922 2 8 3 4 7 6 5 4 3 2 5 6 7 8 TableKeyPerformanceParameters Parameter Value Unit VDS 6 V RDS(on),max 2.7 mω ID A Qoss 43 nc QG(..4.5V) 24 nc S S 2 S 3 G 4 8 D 7 D 6 D 5 D Type/OrderingCode Package Marking RelatedLinks PGTDSON8 27N6L ) JSTD2 and JESD22 Rev.2.,26923
OptiMOS TM PowerTransistor,6V TableofContents Description............................................................................. Maximum ratings........................................................................ 3 Thermal characteristics.................................................................... 3 Electrical characteristics................................................................... 4 Electrical characteristics diagrams........................................................... 6 Package Outlines....................................................................... Revision History........................................................................ 2 Trademarks........................................................................... 2 Disclaimer............................................................................ 2 2 Rev.2.,26923
OptiMOS TM PowerTransistor,6V Maximumratings atta=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current ID Pulsed drain current 2) ID,pulse 4 A TC=25 C 84 23 A VGS=V,TC=25 C VGS=V,TC= C VGS=V,TA=25 C,RthJA=5K/W ) Avalanche energy, single pulse 3) EAS mj ID=5A,RGS=25Ω Gate source voltage VGS 2 2 V Power dissipation Ptot Operating and storage temperature Tj,Tstg 55 5 C 83 2.5 W TC=25 C TA=25 C,RthJA=5K/W 2) IEC climatic category; DIN IEC 68: 55/5/56 2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case, bottom RthJC.9.5 K/W Device on PCB, 6 cm 2 cooling area ) RthJA 5 K/W ) Device on 4 mm x 4 mm x.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 3 for more detailed information 3 Rev.2.,26923
OptiMOS TM PowerTransistor,6V 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 6 V VGS=V,ID=mA Gate threshold voltage VGS(th)..7 2.3 V VDS=VGS,ID=49µA Zero gate voltage drain current IDSS.5 µa VDS=6V,VGS=V,Tj=25 C VDS=6V,VGS=V,Tj=25 C Gatesource leakage current IGSS na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Gate resistance ) RG.3.95 Ω 2.3 3. 2.7 3.9 mω VGS=V,ID=5A VGS=4.5V,ID=25A Transconductance gfs 6 2 S VDS >2 ID RDS(on)max,ID=5A Table5Dynamiccharacteristics ) Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 33 44 pf VGS=V,VDS=3V,f=MHz Output capacitance Coss 67 89 pf VGS=V,VDS=3V,f=MHz Reverse transfer capacitance Crss 33 58 pf VGS=V,VDS=3V,f=MHz Turnon delay time td(on) 7.7 ns Rise time tr 4.8 ns Turnoff delay time td(off) 25 ns Fall time tf 5.4 ns VDD=3V,VGS=V,ID=5A, RG,ext=.6Ω VDD=3V,VGS=V,ID=5A, RG,ext=.6Ω VDD=3V,VGS=V,ID=5A, RG,ext=.6Ω VDD=3V,VGS=V,ID=5A, RG,ext=.6Ω Table6Gatechargecharacteristics 2) Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs nc VDD=3V,ID=5A,VGS=to4.5V Gate charge at threshold Qg(th) 6 nc VDD=3V,ID=5A,VGS=to4.5V Gate to drain charge ) Qgd 8 nc VDD=3V,ID=5A,VGS=to4.5V Switching charge Qsw 2 nc VDD=3V,ID=5A,VGS=to4.5V Gate charge total ) Qg 24 3 nc VDD=3V,ID=5A,VGS=to4.5V Gate plateau voltage Vplateau 2.9 V VDD=3V,ID=5A,VGS=to4.5V Gate charge total, sync. FET Qg(sync) 43 nc VDS=.V,VGS=toV Output charge ) Qoss 43 58 nc VDD=3V,VGS=V ) Defined by design. Not subject to production test 2) See Gate charge waveforms for parameter definition 4 Rev.2.,26923
OptiMOS TM PowerTransistor,6V Table7Reversediode Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode continuous forward current IS 69 A TC=25 C Diode pulse current IS,pulse 276 A TC=25 C Diode forward voltage VSD.8.2 V VGS=V,IF=5A,Tj=25 C Reverse recovery time ) trr 4 8 ns VR=3V,IF=5A,diF/dt=A/µs Reverse recovery charge ) Qrr 36 72 nc VR=3V,IF=5A,diF/dt=A/µs ) Defined by design. Not subject to production test 5 Rev.2.,26923
OptiMOS TM PowerTransistor,6V 4Electricalcharacteristicsdiagrams Diagram:Powerdissipation Diagram2:Draincurrent 2 8 8 6 Ptot[W] ID[A] 6 4 4 2 2 25 5 75 25 5 75 TC[ C] Ptot=f(TC) 25 5 75 25 5 75 TC[ C] ID=f(TC);VGS V Diagram3:Safeoperatingarea 3 Diagram4:Max.transientthermalimpedance µs 2 µs.5 µs.2 ID[A] DC ms ms ZthJC[K/W]..5.2. 2 single pulse 2 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp 3 6 5 4 3 2 tp[s] ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.,26923
OptiMOS TM PowerTransistor,6V Diagram5:Typ.outputcharacteristics 4 Diagram6:Typ.drainsourceonresistance 8 36 32 28 5 V 4.5 V 7 6 3 V 3.2 V ID[A] 24 2 6 2 8 4 V 3.5 V 3.2 V RDS(on)[mΩ] 5 4 3 2 3.5 V 4 V 4.5 V 5 V 7 V V 4 3 V 2.8 V..5..5 2. VDS[V] 5 5 2 25 3 35 4 ID[A] ID=f(VDS);Tj=25 C;parameter:VGS RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 4 Diagram8:Typ.forwardtransconductance 6 36 32 28 2 24 25 C 5 C ID[A] 2 gfs[s] 8 6 2 8 4 4 2 4 6 VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max;parameter:Tj 2 4 6 8 ID[A] gfs=f(id);tj=25 C 7 Rev.2.,26923
OptiMOS TM PowerTransistor,6V Diagram9:Drainsourceonstateresistance 5. Diagram:Typ.gatethresholdvoltage 3 4.5 4. 3.5 max 2 RDS(on)[mΩ] 3. 2.5 2. typ VGS(th)[V] 49 µa 49 µa.5..5. 6 2 2 6 4 8 Tj[ C] RDS(on)=f(Tj);ID=5A;VGS=V 6 2 2 6 4 8 Tj[ C] VGS(th)=f(Tj);VGS=VDS Diagram:Typ.capacitances Diagram2:Forwardcharacteristicsofreversediode 4 Ciss 3 25 C 5 C 25 C max 5 C max 3 2 C[pF] Coss IF[A] 2 Crss 2 4 6 VDS[V] C=f(VDS);VGS=V;f=MHz..5..5 2. VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.,26923
OptiMOS TM PowerTransistor,6V Diagram3:Avalanchecharacteristics 3 Diagram4:Typ.gatecharge 9 2 C 25 C 8 7 6 2 V 3 V 48 V IAV[A] 25 C VGS[V] 5 4 3 2 2 3 tav[µs] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) 2 3 4 5 Qgate[nC] VGS=f(Qgate);ID=5Apulsed;parameter:VDD Diagram5:Drainsourcebreakdownvoltage 7 Gate charge waveforms 65 VBR(DSS)[V] 6 55 5 6 2 2 6 4 8 Tj[ C] VBR(DSS)=f(Tj);ID=mA 9 Rev.2.,26923
OptiMOS TM PowerTransistor,6V 5PackageOutlines FigureOutlinePGTDSON8,dimensionsinmm Rev.2.,26923
OptiMOS TM PowerTransistor,6V Figure2OutlineFootprint(TDSON8) Rev.2.,26923
OptiMOS TM PowerTransistor,6V RevisionHistory Revision:26923,Rev.2. Previous Revision Revision Date Subjects (major changes since last revision) 2. 26923 Release of final version TrademarksofInfineonTechnologiesAG AURIX,C66,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust25 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 8726München,Germany 26InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 2 Rev.2.,26923