AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HAH1DR 200-S

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AUTOMOTIE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HAHDR 2-S Introduction The HAHDR family is for the electronic measurement of DC, AC or pulsed currents in high power automotive applications with galvanic separation between the primary circuit (high power) and the secondary circuit (electronic circuit). The HAHDR family gives you the choice of having different current measuring ranges in the same housing (from ± 2 A up to ± 9 A). Features Open Loop transducer using the Hall effect Unipolar + 5 DC power supply Primary current measuring range ± 2 A Maximum RMS primary admissible current: defined by busbar to have T < + 5 C Operating temperature range: - 4 C < T < + 25 C Output voltage: full ratio-metric (in sensitivity and offset) Compact design. Principle of HAHDR Family The open loop transducers uses a Hall effect integrated circuit. The magnetic flux density B, contributing to the rise of the Hall voltage, is generated by the primary current I P to be measured. The current to be measured I P is supplied by a current source i.e. battery or generator (Figure ). Within the linear region of the hysteresis cycle, B is proportional to: B (I P ) = constant (a) x I P The Hall voltage is thus expressed by: H = (R H /d) x I x constant (a) x I P Except for I P, all terms of this equation are constant. Therefore: H = constant (b) x I P The measurement signal H amplified to supply the user output voltage or current. Advantages Excellent accuracy ery good linearity ery low thermal offset drift ery low thermal sensitivity drift Wide frequency bandwith No insertion losses. Fig. : Principle of the open loop transducer Automotive applications Battery monitoring Starter Generators Inverters HE application E application. N 97.D4.44.. Page /5

Dimensions HAHDR 2-S (in mm) Drawing for information only Mechanical characteristics Plastic case PBT GF 3 Magnetic core Iron silicon alloy Mass 38 g Electrical terminal coating Brass tin plated Remarks > 2.5 when I P flows in the direction of the arrow. System architecture (example) C L nf EMC protection RC Low pass filter EMC protection (optional) Mounting recommendation Connector type TYCO 473672 I p Electronic schematic Components list DR version 4.7 nf 47 nf Diagnostic Mode R L > kω optional resistor for signal line diagnostic Diagnostic Open circuit in = <.5 Short GND in = <.5 Page 2/5

Absolute Maximum ratings (not operating) HAHDR 2-S Parameter Symbol Unit Specification Min Typical Max Primary current peak Î Pmax ) Conditions Supply continuous over voltage 7 Not operating Reverse voltage 2) -.5 min @ T A Ambient storage temperature T S C - 55 25 Electrostatic discharge voltage U ESD k 2 JESD 22-A4-B (HBM) Continuous output current I out ma - RMS voltage for AC insulation test, 5 Hz, min U d k 2 5 Hz, min Continuous output over voltage (Analog) -.5 +.5 Insulation resistance R IS MΩ 5 5 - ISO 675 Output Short circuit duration t c minutes 2 Operating characteristics in nominal range (I PN ) Specification Parameter Symbol Unit Min Typical Max Electrical Data Primary current I Pn A - 2 2 Supply voltage 4.75 5 5.25 Conditions Ambient operating temperature T A C - 4 25 Connector limited 5 C Output voltage (Analog) 3) = ( /5) ( o + G I P ) @ Sensitivity 3) G m/a @ = 5 Current consumption I C ma 5 2 @ = 5, - 4 C < T A Load resistance R L ΚΩ Capacitive loading C L nf Output internal resistance R out Ω DC to khz Ratiometricity error ε r %.5 Performance data Sensitivity error ε G % - ±.5 @ T A, @ I = I P Electrical offset current I OE ±.6 @ T A, @ = 5 Magnetic offset current I OM A ±.9 @ T A, @ = 5, after ± I P Global offset current I O -.5.5 @ T A Average temperature coefficient of OE TCI OEA m/ C -.8 ±.3.8 @ - 4 C < T A Average temperature coefficient of G TCG A %/ C -.35 ±.2.35 @ - 4 C < T A Linearity error ε L % - @ = 5, @ T A, @ I= I P Step response time to 9 % I PN t r µs 6 @ di/dt = A/µs Frequency bandwidth 4) BW khz 3 @ - 3 db Output clamping voltage minimum. @ = 5, @ T A SZ Output clamping voltage maximum 4.9 @ = 5, @ T A Output voltage noise peak-peak no p-p m 22 DC to khz Notes: ) Busbar temperature must be below 5 C 2) Transducer not protected against reverse polarity 3) The output voltage is fully ratiometric: The offset and sensitivity are dependent on the supply voltage relative to the following formula: I 5 P = O U G C with G in (/A) 4) Tested only with small signal only to avoid excessive heating of the magnetic core. Page 3/5

HAHDR 2-S HAHDR 2 Sensitivity Error (%) HAHDR 2 Electrical offset Error (A) 5 3 4 3 2 2-4 -5-4 2 4 6 8 2 Temperature ( C) -4 2 4 6 8 2 Temperature ( C) HAHDR 2 Frequency Bandwith HAHDR 2 Phase Gain (db) -4 Phase ( ) -4-5 -5-6 -6-7 -7-8 -8 Frequency (Hz) -9 Frequency (Hz) Page 4/5

HAHDR 2-S Output noise voltage: The output voltage noise is the result of the noise floor of the Hall elements and the linear amplifier. Magnetic offset: The magnetic offset is the consequence of an over-current on the primary side. It s defined after an excursion of I PN. Linearity: The maximum positive or negative discrepancy with a reference straight line = f (I P ). Unit: linearity (%) expressed with full scale of I PN. Response time (delay time) t r : The time between the primary current signal (I PN ) and the output signal reach at 9 % of its final value. Sensitivity: The Transducer s sensitivity G is the slope of the straight line Non linearity example Sensitivity with temperature: The error of the sensitivity in the operating temperature is the relative variation of sensitivity with the temperature considered with the initial offset at 25 C. The sensitivity variation G T is the maximum variation (in ppm or %) of the sensitivity in the temperature range: G T = (Sensitivity max - Sensitivity min) / Sensitivity at 25 C. The sensitivity drift TCG A is the G T value divided by the temperature range. Deeper and detailed info available is our LEM technical sales offices (www.lem.com). Offset voltage @ I P = A: The offset voltage is the output voltage when the primary current is zero. The ideal value of O is /2 at = 5. So, the difference of O - /2 is called the total offset voltage error. This offset error can be attributed to the electrical offset (due to the resolution of the ASIC quiescent voltage trimming), the magnetic offset, the thermal drift and the thermal hysteresis. Deeper and detailed info available is our LEM technical sales offices (www.lem.com). Environmental test specifications: Reference straight line = f (I P ), it must establish the relation: (I P ) = /5 (G ٠ I P + o ) Offset with temperature: Max linearity error Linearity variation in I PN I P Name Standard Conditions Damp heat, steady state JESD22-A 85 C - 85 C / h Insulation resistance ISO 675 4. 5 /min Temperature humidity cycle test ISO 675-4 - + 85 C days Isolation test IEC 6664 2 k / 5 Hz / min ibration test (random) Terminal strength test Mechanical tests IEC 668-64 ISO 675 & 4..2.5 (27) According to LEM 2 2 Hz Random rms (g rms) 8 h / axis Thermal shocks IEC 6684 Na - 4 + 25 C 3 cycles I [A] Free fall ISO 675 4.3 m concrete ground I P 9 % t r I T Radiated electromagnetic Bulk current injection Radiated radio frequency electromagnetic field Electrostatic discharge test EMC Test Directive 24/4/CE ISO 452 Directive 24/4/CE ISO 452-4 IEC 6-4 IEC 6-4 3 /m 2 MHz - 4 MHz - 6 ma 8 MHz to, MHz - /m Air discharge=2 k t [µs] The error of the offset in the operating temperature is the variation of the offset in the temperature considered with the initial offset at 25 C. The offset variation I OT is a maximum variation the offset in the temperature range: I OT = I OE max - I OE min The Offset drift TCI OEA is the I OT value divided by the temperature range. Page 5/5