2SC1923 2SC1923. High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications. Maximum Ratings (Ta 25 C)

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC1923 High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications Unit: mm Small reverse transfer capacitance: Cre = 0.7 pf (typ.) Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta 25 C) Characteristics Symbol Rating Unit Collector-base voltage V CBO 40 V Collector-emitter voltage V CEO 30 V Emitter-base voltage V EBO 4 V Collector current I C 20 ma Base current I B 4 ma Collector power dissipation P C 100 mw Junction temperature T j 125 C Storage temperature range T stg 55~125 C JEDEC JEITA TOSHIBA TO-92 SC-43 2-5F1B Electrical Characteristics (Ta 25 C) Weight: 0.21 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO V CB 18 V, I E 0 0.5 A Emitter cut-off current I EBO V EB 4 V, I C 0 0.5 A DC current gain h FE (Note) V CE 6 V, I C 1 ma 40 200 Reverse transfer capacitance C re V CE 6 V, f 1 MHz 0.70 pf Transition frequency f T V CE 6 V, I C 1 ma 550 MHz Collector-base time constant C c r bb V CE 6 V, I E 1 ma, f 30 MHz 30 ps Noise figure NF V CE 6 V, I E 1 ma, f 100 MHz, 2.5 4.0* db Power gain G pe Figure 1 15 18 db Note: h FE classification R: 40~80, O: 70~140, Y: 100~200 (* NF 5.0dB max) 1

L 1 : 0.8 mmb silver plated copper wire, 4 T, 10ID, 8 LENGTH Figure 1 NF, G pe Test Circuit y Parameter (typ.) (1) Common emitter (VCE 6 V, IE 1 ma, f 100 MHz) Characteristics Symbol Typ. Unit Input conductance g ie 2.9 ms Input capacitance C ie 10.2 pf Reverse transfer admittance y re 0.33 S Phase angle of reverse transfer admittance G re 90 Forward transfer admittance y fe 40 ms Phase angle of forward transfer admittance G fe 20 Output conductance g oe 45 S Output capacitance C oe 1.1 pf (2) Common base (VCE 6 V, IE 1 ma, f 100 MHz) Characteristics Symbol Typ. Unit Input conductance g ib 34 ms Input capacitance C ib 10 pf Reverse transfer admittance y rb 0.27 S Phase angle of reverse transfer admittance G rb 105 Forward transfer admittance y fb 34 ms Phase angle of forward transfer admittance G fb 165 Output conductance g ob 45 S Output capacitance C ob 1.1 pf 2

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