Revision: Rev

Similar documents
Tire Pressure Monitoring Sensor

LED Drivers for Low Power LEDs BCR205W. Data Sheet. Industrial and Multimarket. Ultra low dropout LED controller. Revision 2.

Power Management & Multimarket

BGA7L1BN6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for LTE. Revision 3.1,

BGA729N6. Data Sheet. RF & Protection Devices. Broadband Low Noise Amplifier for Portable and Mobile TV Applications. Revision 3.

Power Management & Multimarket

Revision: Rev

Power Management & Multimarket

BGSF110GN26. Preliminary Datasheet. RF & Protection Devices

Power Management & Multimarket

BGM1143N9. Data Sheet. RF & Protection Devices. Front-End Module for Global Navigation Satellite Systems (GNSS) Revision 2.0, Preliminary

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

Revision: Rev

BGS22W2L10. Data Sheet. Power Management & Multimarket. DPDT (Dual-Pole / Double-Throw) Differential RF Switch. Revision October 12, 2012

SPDT RF CMOS Switch. Revision: Rev

BGM1043N7. Data Sheet. RF & Protection Devices. GPS and GLONASS Front-End Module. Revision 3.0,

BGB719N7ESD. Data Sheet. RF & Protection Devices. Low Noise Amplifier MMIC for FM Radio Applications. Revision 1.1,

Power Management & Multimarket

Revision: Rev

BFN18. Data Sheet. RF & Protection Devices. NPN Silicon High-Voltage Transistors. Revision 1.0,

Power Management & Multimarket

BGM1034N7. Data Sheet. RF & Protection Devices. GPS and GLONASS Front-End Module. Revision 3.0,

Power Management & Multimarket

BGA924N6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)

Revision: Rev

BGS12SN6. Data Sheet. Power Management & Multimarket. Wideband RF SPDT Switch in ultra small package with 0.77mm 2 footprint. Revision 1.

BGS12SN6. Data Sheet. Power Management & Multimarket. Wideband RF SPDT Switch in small package with 0.77mm 2 footprint. Revision 2.

LED Drivers for High Power LEDs

Power Management & Multimarket

TVS Diodes ESD5V0L1B-02V. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes. Bi-directional Low Capacitance TVS Diode

BFP450. Datasheet. RF & Protection Devices. Linear Low Noise Silicon Bipolar RF Transistor. Revision 1.2,

Revision: Rev

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

BGA7L1N6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for LTE. Revision 3.1 (Min/Max),

Power Management & Multimarket

Power Management & Multimarket

BFP650. Data Sheet. RF & Protection Devices. High Linearity Silicon Germanium Bipolar RF Transistor. Revision 1.1,

Revision: Rev

Power Management & Multimarket

BFP760. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

High Precision Hall Effect Switch for Consumer Applications

Revision: Rev

BFP720F. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

Power Management & Multimarket

BGB717L7ESD. Data Sheet. RF & Protection Devices. SiGe:C Low Noise Amplifier MMIC for FM Radio Applications. Revision 3.

BFP740. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

Revision: Rev

BGS12PN10. Data Sheet. Power Management & Multimarket. SPDT high linearity, high power RF Switch. Revision

Revision: Rev

BFP740F. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

Revision: Rev

BFP840ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.2,

AN523. About this document. Scope and purpose

LED Drivers for High Power LEDs

BFP843. Data Sheet. RF & Protection Devices. Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor. Revision 1.

BFP640. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

High Precision Automotive Hall Effect Switch for 5V Applications

Revision: Rev

BGB741L7ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Broadband RF Amplifier MMIC. Revision 2.0,

BFR720L3RH. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

BFR740L3RH. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

Band 20 ( MHz)

Edition Published by Infineon Technologies AG Munich, Germany 2017 Infineon Technologies AG All Rights Reserved.

BFP450. Data Sheet. RF & Protection Devices. High Linearity Low Noise Si NPN RF Transistor. Revision 1.0,

Overvoltage at the Buck Converter Output

Power Management & Multimarket

EiceDRIVER. High voltage gate drive IC. Application Note. AN Revision 1.3,

Revision: Rev

BFP842ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

BGA751N7. Data Sheet. RF & Protection Devices. SiGe Bipolar 3G/3.5G/4G Single-Band LNA. Revision 3.1,

Revision: Rev

BFP640ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

Revision: Rev

TVS Diodes. ESD0P2RF Series. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes

BGSA14GN10. Data Sheet. Power Management & Multimarket. Single-Pole Quad Throw Antenna Tuning Switch. Revision

BFP650. Data Sheet. RF & Protection Devices. High Linearity Low Noise SiGe:C NPN RF Transistor. Revision 1.0,

BFR840L3RHESD for 5 to 6 GHz

TVS Diodes. ESD18VU1B Series. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes

BFR840L3RHESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.

Revision: Rev

Revision: Rev

BFP720FESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.

BGA713L7. Data Sheet. RF & Protection Devices. Single-Band UMTS LNA (700, 800 MHz) Revision 3.0,

Dual channel 5 A, high-speed, low-side gate driver with high negative input voltage capability and advanced reverse current robustness

Revision: Rev

BGA748L16. Data Sheet. RF & Protection Devices. High Linearity Quad-Band UMTS LNA (2100, 1900, 900, 800 MHz) Revision 3.

Ultra Low Quiescent Current Linear Voltage Regulator

BGSA13GN10. Data Sheet. Power Management & Multimarket. Single-Pole Triple Throw Antenna Tuning Switch. Revision

Power Management and Multimarket

TLE4997A8D Grade1. Technical Product Description. Sense & Control. Programmable Linear Dual Hall Sensor. Revision 1.0,

Angle Sensor TLE5012BD. Data Sheet. Sense & Control. GMR-Based Dual Die Angle Sensor. Rev. 1.2,

Analog Manifold Air Pressure Sensor IC. Analog Absolute Pressure Sensor. Revision 1.0,

Revision: Rev

Transcription:

Improvement of Harmonic Distortion Harmonic performance of RF FEM over VSWR and phase Application Note AN284 Revision: Rev. 1.0 RF and Protection Devices

Edition Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Application Note AN284 Revision History: Previous Revision: prev. Rev. x.x Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CIPURSE, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, DI-POL, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EconoPACK, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OptiMOS, ORIGA, POWERCODE, PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SmartLEWIS, SOLID FLASH, TEMPFET, thinq!, TRENCHSTOP, TriCore. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Application Note AN284, Rev. 1.0 3 / 18

List of Content, Figures and Tables Table of Content 1 Introduction... 5 2 Application Information... 5 2.1 Application... 5 3 Measurement Procedure... 7 4 Measurement Results... 8 4.1 Measurement results with f 0 = 824 MHz... 8 4.1.1 Worst case harmonic results... 8 4.1.2 H2 optimised harmonic results... 9 4.1.3 H3 optimised harmonic results... 9 4.1.4 Summary of measurement results with f 0 = 824 MHz... 10 4.2 Measurement results at f 0 = 915 MHz... 12 4.2.1 Worst case harmonic results... 12 4.2.2 Best case harmonic results... 12 4.2.3 Summary of measurement results at f 0 = 915 MHz... 13 5 Antenna matching influences the harmonic performance... 15 6 Conclusion... 16 Authors 17 List of Figures Figure 1 Application Diagram... 5 Figure 2 Harmonic Distortion Test setup... 5 Figure 3 Measurement Procedure... 7 Figure 4 Example of high impedance termination at Tx port... 8 Figure 5 H2 optimized impedance termination of Tx port... 9 Figure 6 H3 optimized impedance termination of Tx port... 9 Figure 7 2 nd Harmonic Results at f 0 = 824MHz... 10 Figure 8 3 rd Harmonic Results at f 0 = 824MHz... 11 Figure 9 High impedance termination of Tx port... 12 Figure 10 Low impedance termination of Tx port... 12 Figure 11 2 rd Harmonic Results at f 0 = 915MHz... 13 Figure 12 3 rd Harmonic Results at f 0 = 915MHz... 14 Figure 13 Proposal for an antenna matching... 15 Figure 14 Impact of the Antenna Matching... 15 Figure 15 2 nd Harmonic improvement by low harmonic termination of the Tx path... 16 List of Tables Table 1 Test Setup Equipment... 6 Table 2 Worst case harmonics with f 0 = 824 MHz... 8 Table 3 H2 optimized harmonics at f 0 = 824 MHz... 9 Table 4 H3 optimized harmonics at f 0 = 824 MHz... 9 Table 5 Summary of the harmonic measurements at f 0 = 824 MHz... 10 Table 6 Worst case harmonics at f 0 = 915 MHz... 12 Table 7 Best case harmonic at f 0 = 915 MHz... 12 Table 8 Summary of harmonic measurements at f 0 = 915 MHz... 13 Application Note AN284, Rev. 1.0 4 / 18

Introduction 1 Introduction This application note shows the possibilities to reduce harmonic products of a RF Front End Module over VSWR antenna port mismatch with arbitrary phase by tuning the impedance termination at the RF CMOS switch input and output. Infineon`s BGS18D RF CMOS SP8T antenna switch has been used as an example. 2 Application Information 2.1 Application The block diagram on Figure 1 shows a typical Front End Module application in RF environments of mobile phones or Base stations. The FEM is connecting the Rx path to the antenna or the antenna to Tx path. Figure 1 Application Diagram This application describes the importance of the harmonic impedance terminations in a RF FEM. The impedances at input and output of the switch have great influences on the performance. To achieve best possible distortion results low impedance harmonic termination has to be offered at the high-power ports of the switch. To find out the perfect port conditions to reach best harmonic performance at VSWR mismatch a test setup has been developed (Figure 2, Table 1). Figure 2 Harmonic Distortion Test setup The test bench includes two phase shifters, one at the input and another at the output of the DUT (BGS18D, chip on evaluation board) to tune the phase of the impedance at the second (H2) and third harmonics (H3). The Application Note AN284, Rev. 1.0 5 / 18

Application Information reflections in the stopband (H2, H3) between the filter (bandpass or lowpass possible) at the TX input and the antenna at output of the DUT influence the harmonic generation in the switch itself. Table 1 Test Setup Equipment Description Manufacturer Identification number Function Signal Generator Rohde & Schwarz SMIQ 06B Power Amplifier Mini Circuits ZHL-30W-252-S+ Circulator MTC C163FFF For proper matching of the PA Directional Coupler PULSAR CS20-22-436/3 Enable power measurement during the test Attenuator Lucas Wenschel 33-3-34 3dB/50W Establishment of a 50 Ohm environment behind directional coupler Power Meter Agilent E4419B Lowpass Filter Wainwright WLK1.0/18G-10SS Filtering the harmonics of PA and providing mismatch at H2 and H3 TX Phase Shifter ATM PNR P1213D Phase tuning of the H2,H3 impedance Highpass Filter Wainwright WLK1.3/15G-10SS Prevents overload of the spectrum analyser Spectrum Analyser Rohde & Schwarz FSIQ26 ANT Phase Shifter ARRA D4428C Phase tuning at VSWR conditions Application Note AN284, Rev. 1.0 6 / 18

Measurement Procedure 3 Measurement Procedure 1. Set low Impedances (only for 2f 0 and 3f 0 ) at the lowpass filter to reduce reflections by changing the phase of the TX phase shifter. The best way, to reach a good harmonic performance is to bring the Input Matching of the lowpass filter (2f 0 and 3f 0 ) together on the left side of the Smith chart. 2. Measure 2f 0 and 3f 0 products concerning several phase conditions by the ANT phase shifter 1. Step 2. Step Vary -180 to 180 Figure 3 Measurement Procedure Harmonic Frequencies: (2 examples) f 0 = 824 MHz, 2f 0 = 1648 MHz, 3f 0 = 2472 MHz f 0 = 915 MHz, 2f 0 = 1830 MHz, 3f 0 = 2745 MHz All measurements are done at nominal operation conditions of the switch (25 room temperature). P IN = 35 dbm, VDD = 3.5V Application Note AN284, Rev. 1.0 7 / 18

Measurement Results 4 Measurement Results The measurement results manifest the dependence of the harmonic degeneration and input / output VSWR including phase. As an example for such a harmonic improvement both corners of GSM850 and GSM900 have been chosen (824MHz and 915MHz). 4.1 Measurement results with f 0 = 824 MHz 4.1.1 Worst case harmonic results Table 2 Worst case harmonics with f 0 = 824 MHz Phase ( )* -180-150 -120-90 -30 0 30 60 90 120 150 180 H2 (dbm) -57-61 -54-42,1-25,6-26,2-29 -32,6-34,6-34,7-41 -57 H3 (dbm) -54-49,5-44 -35,1-25,8-25,6-23,7-21,8-28,4-34,1-37 -54 *2 phase shifter in front of antenna Bad harmonic performance due to the high impedance harmonic termination of the Tx port of the switch Figure 4 Example of high impedance termination at Tx port Application Note AN284, Rev. 1.0 8 / 18

Measurement Results 4.1.2 H2 optimised harmonic results Table 3 H2 optimized harmonics at f 0 = 824 MHz Phase ( )* -180-150 -120-90 -30 0 30 60 90 120 150 180 H2 (dbm) -56-65 -49,8-48 -50,5-50 -47-43,6-39,9-40,8-47,2-56 H3 (dbm) -35,4-32 -33,1-40,5-38,9-35 -40,4-45,2-41,3-35,8-36,7-35,4 *2 phase shifter in front of antenna Figure 5 H2 optimized impedance termination of Tx port 4.1.3 H3 optimised harmonic results Table 4 H3 optimized harmonics at f 0 = 824 MHz Phase ( )* -180-150 -120-90 -30 0 30 60 90 120 150 180 H2 (dbm) -50,3-52,1-52,4-47 -35,3-30,1-30,1-35,7-41,4-46,6-52,5-50,3 H3 (dbm) -35,4-32 -33,1-40,5-38,9-35 -40,4-45,2-41,3-35,8-36,7-35,4 *2 phase shifter in front of antenna Figure 6 H3 optimized impedance termination of Tx port Application Note AN284, Rev. 1.0 9 / 18

Measurement Results 4.1.4 Summary of measurement results with f 0 = 824 MHz Table 5 H3 optimized H2 High Tx (dbm) impedance H2 optimized Summary of the harmonic measurements at f 0 = 824 MHz Phase ( )* -180-150 -120-90 -30 0 30 60 90 120 150 180-50,3-52,1-52,4-47 -35,3-30,1-30,1-35,7-41,4-46,6-52,5-50,3-57 -61-54 -42,1-25,6-26,2-29 -32,6-34,6-34,7-41 -57-56 -65-49,8-48 -50,5-50 -47-43,6-39,9-40,8-47,2-56 50 ohm -57-62 -54-41,7-26 -27-29,5-32 -34-33 -41-57 Phase ( )* -180-150 -120-90 -30 0 30 60 90 120 150 180 H3 optimized H3 High Tx (dbm) impedance H2 optimized -35,4-32 -33,1-40,5-38,9-35 -40,4-45,2-41,3-35,8-36,7-35,4-54 -49,5-44 -35,1-25,8-25,6-23,7-21,8-28,4-34,1-37 -54-33,9-28,4-35,4-35,3-31,8-35,9-39,9-37,5-32,3-35,7-36,2-33,9 50 ohm -44-53 -43-32,9-26 -25-22,2-22 -29-32 -33-44 Figure 7 2 nd Harmonic Results at f 0 = 824MHz Application Note AN284, Rev. 1.0 10 / 18

Measurement Results Figure 8 3 rd Harmonic Results at f 0 = 824MHz Application Note AN284, Rev. 1.0 11 / 18

Measurement Results 4.2 Measurement results at f 0 = 915 MHz 4.2.1 Worst case harmonic results Table 6 Worst case harmonics at f 0 = 915 MHz Phase ( )* -180-150 -120-90 -30 0 30 60 90 120 150 180 H2 (dbm) -33-35 -37-36 -40-51 -60-54 -40-29 -30-33 H3 (dbm) -30-30 -29-37 -45-56 -44-45 -41-29 -28-30 *2 phase shifter in front of antenna Bad harmonic performance due to high impedance termination of Tx path Figure 9 High impedance termination of Tx port 4.2.2 Best case harmonic results Table 7 Best case harmonic at f 0 = 915 MHz Phase ( )* -180-150 -120-90 -30 0 30 60 90 120 150 180 H2 (dbm) -36-41 -48-56 -62-55 -51-53 -49-43 -38-36 H3 (dbm) -43-45 -41-35 -40-42 -39-36 -43-44 -38-43 *2 phase shifter in front of antenna Figure 10 Low impedance termination of Tx port Application Note AN284, Rev. 1.0 12 / 18

Measurement Results 4.2.3 Summary of measurement results at f 0 = 915 MHz Table 8 High Tx H2 impedance (dbm) Low Tx impedance H3 Summary of harmonic measurements at f 0 = 915 MHz Phase ( )* -180-150 -120-90 -30 0 30 60 90 120 150 180-33 -35-37 -36-40 -51-60 -54-40 -29-30 -33-36 -41-48 -56-62 -55-51 -53-49 -43-38 -36 50 ohm -34-39 -44-48 -52-53 -51-52 -45-39 -33-34 Phase ( )* -180-150 -120-90 -30 0 30 60 90 120 150 180 High Tx impedance (dbm) Low Tx impedance -30-30 -29-37 -45-56 -44-45 -41-29 -28-30 -43-45 -41-35 -40-42 -39-36 -43-44 -38-43 50 ohm -29-28 -29-34 -39-45 -56-45 -37-29 -28-29 Figure 11 2 rd Harmonic Results at f 0 = 915MHz Application Note AN284, Rev. 1.0 13 / 18

Measurement Results Figure 12 3 rd Harmonic Results at f 0 = 915MHz Application Note AN284, Rev. 1.0 14 / 18

SP2.SP.S(1,1) SP1.SP.S(1,1) SP1.SP.S(2,2) RF Front End Modules Antenna matching influences the harmonic performance 5 Antenna matching influences the harmonic performance To avoid the worst case phase condition at the antenna port of the module a properly chosen matching circuit is recommend. Simple example is given on Figure 13. The results of such an antenna matching are shown on Figure 14. Figure 13 Proposal for an antenna matching The antenna matching network can transform the VSWR circle to lower impedances to avoid the worst case harmonic performance phase lower impedances freq (1.648GHz to 1.648GHz) freq (2.472GHz to 2.472GHz) Figure 14 Impact of the Antenna Matching Application Note AN284, Rev. 1.0 15 / 18

Conclusion 6 Conclusion The overall harmonic performance of a RF Front End Module has been improved in this example by well chosen termination impedances of the TX filter Figure 15. 20 db Figure 15 2 nd Harmonic improvement by low harmonic termination of the Tx path An additional improvement of the harmonic distortion could be achieved by an antenna matching network in the module or on PCB transforming the VSWR impedance in order to reduce VSWR high impedance seen from the RF switch at the critical phase angle. Application Note AN284, Rev. 1.0 16 / 18

Authors Authors Nikolay Ilkov, RF CMOS Switch Product Development André Dewai, Application Engineer of Business Unit RF and Protection Devices Klaus Hoenninger, RF CMOS Switch Product Development Application Note AN284, Rev. 1.0 17 / 18

w w w. i n f i n e o n. c o m Published by Infineon Technologies AG AN284