DC - 20 GHz Discrete power phemt

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DC - 20 GHz Discrete power phemt Product Description The TriQuint is a discrete 0.6 mm phemt which operates from DC-20 GHz. The is designed using TriQuint s proven standard 0.3um power phemt production process. The typically provides > 28 dbm of saturated output power with power gain of db. The maximum power added efficiency is 8% which makes the appropriate for high efficiency applications. Key Features and Performance Frequency Range: DC - 20 GHz > 28 dbm Nominal Psat 8% Maximum PAE 36 dbm Nominal OIP3 db Nominal Power Gain Suitable for high reliability applications 0.6mm x 0.3μm Power phemt Nominal Bias Vd = 8-V, Idq = 4-7mA (Under RF Drive, Id rises from 4mA to 1mA) Chip Dimensions: 0.7 x 0.3 x 0. mm (0.0 x 0.021 x 0.004 in) Primary Applications Point-to-point Radio High-reliability space Military Base Stations Broadband Wireless Applications 3 The is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. The has a protective surface passivation layer providing environmental robustness. Lead-free and RoHS compliant Maximum Gain (db) 2 MSG 20 MAG 1 0 0 2 4 6 8 Frequency (GHz) 1

TABLE I MAXIMUM RATINGS Symbol Parameter 1/ Value Notes V + Positive Supply Voltage. V 2/ V - Negative Supply Voltage Range -V to 0V I + Positive Supply Current 282 ma 2/ I G Gate Supply Current 7 ma P IN Input Continuous Wave Power 23 dbm 2/ P D Power Dissipation See note 3 2/ 3/ T CH Operating Channel Temperature 1 C 4/ T M Mounting Temperature ( Seconds) 320 C T STG Storage Temperature -6 to 1 C 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P D. 3/ For a median life time of 1E+6 hrs, Power dissipation is limited to: P D (max) = (1 C TBASE C) / 8.0 ( C/W) 4/ Junction operating temperature will directly affect the device median time to failure (T M ). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TABLE II DC PROBE CHARACTERISTICS (T A = 2 C, Nominal) Symbol Parameter Minimum Typical Maximum Unit Idss Saturated Drain Current - 0 - ma Gm Transconductance - - ms V P Pinch-off Voltage -1. -1-0. V V BGS V BGD Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain - - -8 V - - - V Note: For TriQuint s 0.3um power phemt devices, RF breakdown >> DC breakdown 2

TABLE III RF CHARACTERIZATION TABLE 1/ (T A = 2 C, Nominal) SYMBOL PARAMETER f = GHz f = GHz UNITS Power Tuned: Vd = V Idq = 4 ma Vd = V Idq = 4 ma Vd = V Idq = 4 ma Vd = V Idq = 4 ma Psat Saturated Output Power 28.9 29.6 28.1 28.7 dbm PAE Power Added Efficiency 2.4 1.9 41. 37.0 % Gain Power Gain.9.9 8.3 8.0 db Γ L 2/ Efficiency Tuned: Load Reflection coefficient 0.379 0.6 0.4 4. 0.2 8.9 0.62.7 - Psat Saturated Output Power 28.3 29.3 27. 28.1 dbm PAE Power Added Efficiency 8.3 6.0 46.0 42. % Gain Power Gain 8. 8.3 db Γ L 2/ Load Reflection coefficient 0.44 94.2 0.46 93.4 0.62 6.9 0.673 4.1 - OIP3 Output TOI 37 36 37 36 dbm 1/ Large signal equivalent phemt output network 2/ Optimum load impedance for maximum power or maximum PAE at and GHz. The series resistance and inductance (Rd and Ld) shown in the Figure on page 7 is excluded 3

TABLE IV THERMAL INFORMATION Parameter Test Conditions T CH ( o C) θ JC ( C/W) T M (HRS) θ JC Thermal Resistance Vd = V (channel to backside of carrier) Idq = 4 ma Pdiss = 0.4 W 8 1.6 E+6 Note: Assumes eutectic attach using 1. mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70 C baseplate temperature. Measured Fixtured Data IMD3 vs. output power/tone at & GHz 0 - -20 GHz, Vd=V, Id=4mA GHz, Vd=V, Id=4mA GHz, Vd=V,Id=4mA GHz, Vd=V, Id=4mA IMD3 (dbc) - -40 - -60-70 7 8 9 11 1 17 19 20 21 Output power/tone (dbm) 4

Measured Fixtured Data Power tuned data at GHz Pout (dbm) 32 28 24 20 Vd = V, Id = 4mA 8 9 11 1 17 19 20 1 0 1 0 1 0 90 80 70 60 Id (ma) Gain (db) 19 17 1 11 9 8 7 6 Vd = V, Id = 4mA 8 9 11 1 17 19 20 62 8 4 46 42 38 34 PAE (%) For power tuned devices at GHz Input matched for maximum gain & output load is: Vd=V, Idq=4mA: Rp = 7.0 Ω, Cp = 0.27pF, Γ = 0.400, θ = 4.7 Vd=V, Idq=7mA: Rp = 44.6 Ω, Cp = 0.276pF, Γ = 0.382, θ = 0.1 Efficiency tuned data at GHz Pout (dbm) 38 36 34 32 28 24 20 Vd = V, Id = 4mA 8 9 11 1 17 19 20 0 170 0 1 0 1 0 1 0 90 80 70 60 Id (ma) Gain (db) 19 17 1 11 9 8 7 6 Vd = V, Id = 4mA 8 9 11 1 17 19 20 62 8 4 46 42 38 34 PAE (%) For efficiency tuned devices at GHz: Input matched for maximum gain & output load is: Vd=V, Idq=4mA: Rp = 74.2 Ω, Cp = 0.2pF, Γ = 0.466, θ = 93.4 Vd=V, Idq=4mA: Rp = 72. Ω, Cp = 0.22pF, Γ = 0.4, θ = 93.7

Measured Fixtured Data Power tuned data at GHz Pout (dbm) 32 28 24 20 Vd = V, Id = 4mA 11 1 17 19 20 21 23 24 2 1 0 1 0 1 0 90 80 70 60 Id (ma) Gain (db) 11 9 8 7 6 4 3 Vd = V, Id = 4mA 2 11 1 17 19 20 21 23 24 2 46 43 40 37 34 31 28 2 19 PAE (%) For power tuned devices at GHz Input matched for maximum gain & output load is: Vd=V, Idq=4mA: Rp = 48.4 Ω, Cp = 0.432pF, Γ = 0. 6, θ =.1 Vd=V, Idq=7mA: Rp = 43. Ω, Cp = 0.41pF, Γ = 0., θ = 7.7 Efficiency tuned data at GHz Pout (dbm) 28 24 20 Vd = V, Id = 4mA 11 1 17 19 20 21 23 24 2 0 1 0 1 0 90 80 70 60 Id (ma) Gain (db) 11 9 8 7 6 4 3 2 Vd = V, Id = 4mA 11 1 17 19 20 21 23 24 2 4 46 42 38 34 PAE (%) For efficiency tuned devices at GHz: Input matched for maximum gain & output load is: Vd=V, Idq=4mA: Rp = 67.0 Ω, Cp = 0.3pF, Γ = 0.680, θ = 3.0 Vd=V, Idq=4mA: Rp = 1.3 Ω, Cp = 0.49pF, Γ = 0.619, θ = 7.3 6

Linear Model for 0.6 mm Unit phemt cell OUT L Rdg Gate Lg Rg Rgs Cgs + Vi Ri - Cdg gmvi Rds Cds Rd Ld Drain Unit phemt cell Reference Plane L s Source R s Source Gate Source Source UPC Drain L - via = 0.0 nh (2x) UPC = 0.6mm Unit phemt Cell MODEL PARAMETER Vd = 8V Idq = 4mA Vd = 8V Idq = 60mA Vd = 8V Idq = 7mA Vd = V Idq = 4mA Vd = V Idq = 60mA Vd = V Idq = 4mA UNITS Rg 0. 0.23 0.24 0.23 0.24 0.24 Ω Rs 0.40 0.41 0.41 0.46 0.4 0. Ω Rd 0.1 0.2 0.2 0. 0. 0.48 Ω gm 0.19 0.202 0.202 0.8 0.19 0.3 S Cgs 1. 1.63 1.70 1.64 1.73 1.71 pf Ri 1.6 1.9 1.8 1.72 1.64 1.73 Ω Cds 0.11 0.11 0.1 0.1 0.11 0.1 pf Rds 243. 247.08 2. 278.72 279.31 2.49 Ω Cgd 0.072 0.066 0.063 0.064 0.061 0.060 pf Tau.94 6.23 6.1 6.8 6.9 7.36 ps Ls 0.001 0.001 0.001 0.001 0.001 0.001 nh Lg 0.8 0.8 0.8 0.8 0.8 0.8 Ld 0.1 0.0 0.1 0.1 0.1 0.117 nh nh Rgs 1 83 1 420 Ω Rgd 7700 64800 74400 79400 82900 820 Ω 7

Unmatched S-parameters for 0.6 mm phemt Bias Conditions: Vd = V, Idq = 4mA Frequency s11 s11 ang s21 s21 ang s s ang s s ang (GHz) db deg db deg db deg db deg 0. -0.241-36.34.678 19.08-3.863 70.86-2.990 -.01 1-0.419-66.76 21.3 1. -31.020. -3.802-21.21 1. -0.87-89.70 20.08 8.01-28.948 43.7-4.700-27. 2-0.7-6.49.609 117.76-27.903 3.20 -.480-31.06 2. -0.798-1.92 17.0 9.77-27.3 29.07-6.093-33.71 3-0.87-8.3.03 3.28 -.972 24.4-6.4-3.80 3. -0.898 -.70.9 97.82 -.7 20.86-6.896-37.68 4-0.928-1.60.9 93.08 -.602 17.99-7.6-39.1 4. -0.949-6.44.0 88.8 -.1 1.64-7.327-41.37-0.964-1.49.193 8.01 -.4.67-7.47-43.31. -0.976-13.9 11.432 81.46 -.380 11.99-7.47-4.31 6-0.98-16.94.7 78. -.34.4-7.606-47.40 6. -0.992-19.8.079 74.97 -.321 9. -7.641-49.4 7-0.997-1.92 9.473 71.9 -. 8. -7.67-1.7 7. -1.001-4.03 8.90 69.0 -.29 7.11-7.67-4.01 8-1.004 -.94 8.373 66.2 -.290 6.19-7.643-6.31 8. -1.007-7.69 7.872 63.2 -.290.3-7.6-8.64 9-1.008-9. 7.399 60.86 -.293 4.9-7.84-61.01 9. -1.0-170.80 6.9 8.2 -.298 3.88-7.41-63.39-1.0-172.20 6.24.69 -.7 3. -7.491-6.79. -1.011-173.2 6.119 3. -.317 2.61-7.43-68.21 11-1.011-174.76.733.70 -.328 2.04-7.373-70.63 11. -1.011-17.94.363 48.2 -.342 1.1-7.6-73.06-1.0-177.06.0 4.84 -.37 1.01-7.234-7.49. -1.0-178. 4.670 43.44 -.373 0.3-7.18-77.92-1.009-179.1 4.344 41.07 -.390 0.09-7.078-80.3. -1.008 179.86 4.031 38.72 -.408-0.33-6.99-82.78-1.007 178.91 3.728 36.39 -.4-0.72-6.909-8.19. -1.006 177.99 3.436 34.07 -.446-1. -6.819-87.60 1-1.004 177. 3.14 31.77 -.466-1.4-6.728-90.00 1. -1.003 176.24 2.881 29.49 -.486-1.79-6.633-92.39-1.001 17.40 2.6 27.21 -.7-2. -6.37-94.76. -0.999 174.8 2.39 24.9 -.29-2.40-6.439-97. 17-0.998 173.79 2.9.70 -.1-2.69-6.339-99.48 17. -0.996 173.01 1.866 20.46 -.72-2.9-6.238-1.81-0.994 172.24 1.629.23 -.9-3.21-6. -4.. -0.992 171. 1.398.01 -.617-3.4-6.031-6.44 19-0.989 170.76 1.173.79 -.639-3.67 -.9-8.72 19. -0.987 170.04 0.93 11.8 -.661-3.88 -.820-111.00 20-0.98 9.34 0.737 9.38 -.683-4.08 -.7-1.2 20. -0.982 8.64 0. 7.19 -.70-4.27 -.606-11.49 21-0.980 7.96 0.319.00 -.7-4.4 -.498-117.71 21. -0.977 7.28 0.11 2.82 -.748-4.61 -.390-119.91-0.97 6.61-0.08 0.64 -.769-4.77 -.281-1.09. -0.972.96-0.281-1.3 -.789-4.91 -.173-4. 23-0.970.31-0.47-3.69 -.809 -.04 -.064-6.41 23. -0.967 4.67-0.666 -.8 -.829 -.17-4.96-8.4 24-0.964 4.03-0.84-8.01 -.848 -.29-4.848-1.6 24. -0.961 3.41-1.040 -. -.866 -.39-4.740-2.7 2-0.98 2.79-1.4 -.31 -.884 -.49-4.632-4.82 2. -0.9 2. -1.406 -.4 -.901 -.8-4.2-6.88-0.92 1.7-1.86 -.9 -.917 -.67-4.419-8.92 8

NE Mechanical Drawing 0. [0.021] 0.4 [0.0] 1 2 0.4 [0.0] 0.000 [0.000] 0.000 [0.000] 0.119 [0.00] 0.44 [0.0] 0.6 [0.0] Units: millimeters (inches) Thickness: 0.0 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.01 (0.002) GND IS BACKSIDE OF MMIC Bond pad #1 (Vg) 0.090 x 0.090 (0.004 x 0.004) Bond pad #2 (Vd) 0.090 x 0.090 (0.004 x 0.004) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test. 9

Assembly Process Notes Reflow process assembly notes: Use AuSn (80/20) solder with limited exposure to temperatures at or above 0 C for sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C.

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