Nch 6V Power MOSFET Outline V DSS R DS(on) (Max.) 6V.W TOFM I D P D 5W (3) () () Features Inner circuit ) Low onresistance. ) Fast switching speed. 3) Gatesource voltage (V GSS ) guaranteed to be V. ) Drive circuits can be simple. () Gate () Drain (3) Source * BODY DIODE 5) Parallel use is easy. 6) Pbfree lead plating ; RoHS compliant Packaging specifications Packaging Reel size (mm) Bulk pplication Switching Power Supply Type Tape width (mm) Basic ordering unit (pcs) 5 Taping code Marking R6ENX bsolute maximum ratings(t a = 5 C) Parameter Symbol Value Drain Source voltage V DSS 6 V Continuous drain current T c = 5 C T c = C I D * I D *.9 drain current I D,pulse * 6 Gate Source voltage V GSS V valanche energy, single pulse valanche energy, repetitive E S *3.63 E R *3 8 mj mj valanche current, repetitive 3. I R Power dissipation (T c = 5 C) P D 5 W Junction temperature T j 5 C Range of storage temperature T stg 55 to +5 C Reverse diode dv/dt dv/dt * 5 V/ns /.3 Rev.B
bsolute maximum ratings Parameter Symbol Conditions Values Drain Source voltage slope dv/dt V DS = 8V, T j = 5 C 5 V/ns Thermal resistance Parameter Symbol Min. Values Typ. Max. Thermal resistance, junction case R thjc.5 C/W Thermal resistance, junction ambient R thj 7 C/W Soldering temperature, wavesoldering for s T sold 65 C Electrical characteristics(t a = 5 C) Parameter Symbol Conditions Min. Values Typ. Max. Drain Source breakdown voltage V (BR)DSS V GS = V, I D = m 6 V Zero gate voltage drain current I DSS V DS = 6V, V GS = V T j = 5 C T j = 5 C. m Gate Source leakage current I GSS V GS = 3V, V DS = V n Gate threshold voltage V GS (th) V DS = V, I D = m V V GS = V, I D = Static drain source on state resistance R DS(on) T j = 5 C.7.96 T j = 5 C.36 W Gate input resistance R G f = MHz, open drain 5.8 W /.3 Rev.B
Electrical characteristics(t a = 5 C) Parameter Symbol Conditions Min. Values Typ. Max. Transconductance g fs V DS = V, I D = 5 S Input capacitance C iss V GS = V Output capacitance C oss V DS = 5V pf Reverse transfer capacitance C rss f = MHz 3 Effective output capacitance, energy related Effective output capacitance, time related C o(er) C o(tr) V GS = V V DS = V to 8V 56 66 pf Turn on delay time t d(on) V DD 8V, V GS = V 35 Rise time t r Turn off delay time t d(off) I D = R L = 8W 53 5 ns Fall time t f R G = W 67 Gate Charge characteristics(t a = 5 C) Parameter Symbol Conditions Min. Values Typ. Max. Total gate charge Q g V DD 8V 6 Gate Source charge Q gs I D = 8 nc Gate Drain charge Q gd V GS = V 33 Gate plateau voltage V (plateau) V DD 8V, I D = 6.9 V * Limited only by maximum temperature allowed. * P W ms, Duty cycle % *3 I D = 3., V DD = 5V * Reference measurement circuits Fig.5. 3/.3 Rev.B
Body diode electrical characteristics (SourceDrain)(T a = 5 C) Parameter Symbol Conditions Min. Values Typ. Max. Inverse diode continuous, forward current Inverse diode direct current, pulsed I S * I SM * T c = 5 C 6 Forward voltage V SD V GS = V, I S =.5 V Reverse recovery time Reverse recovery charge Peak reverse recovery current t rr Q rr I rrm I S = di/dt = /ms 55 ns. mc 38 Typical Transient Thermal Characteristics Symbol Value Symbol Value R th.8 C th.6 R th.7 K/W C th.36 Ws/K R th3.5 C th3.9 /.3 Rev.B
Electrical characteristic curves Fig. Power Dissipation Derating Curve Fig. Maximum Safe Operating rea Power Dissipation : P D /P D max. [%] 8 6 5 5. P W = ms P W = ms Operation in this area is limited by R DS (on) (V GS = V) P W = ms DC Operation Single Pulse.. Junction Temperature : T j [ C] Drain Source Voltage : V DS [V] Normalized Transient Thermal Resistance : r (t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width. T a = 5ºC Single Pulse R th(cha)(t) = r (t) R th(cha) R th(cha) = 7ºC/W top D =. D =.5 D =.. D =.5 D =. D = Single..... Pulse Width : P W [s] valanche Energy : E S / E S max. [%] Fig. valanche Energy Derating Curve vs Junction Temperature 8 6 5 5 75 5 5 75 Junction Temperature : T j [ºC] 5/.3 Rev.B
Electrical characteristic curves Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) 8 6 8 6 V GS = 6.V V GS =.V V GS = 8.V V GS = 7.V V GS = 6.5V V GS = 5.5V V GS = 5.V V GS =.5V 5 5 5 3 35 5 5 8 6 8 6 V GS =.V V GS = 8.V V GS = 7.V V GS = 6.5V V GS = 6.V V GS = 5.5V V GS = 5.V V GS =.5V.5.5.5 3 3.5.5 5 Drain Source Voltage : V DS [V] Drain Source Voltage : V DS [V] Fig.7 T j = 5 C Typical Output Characteristics(I) 8 6 8 6 V GS =.V V GS = 8.V V GS = 7.V T a =5ºC V GS = 6.5V V GS = 6.V V GS = 5.5V V GS = 5.V V GS =.5V 8 6 Fig.8 T j = 5 C Typical Output Characteristics(II) 8 6 T a =5ºC V GS =.V V GS = 8.V V GS = 7.V V GS = 6.5V V GS = 6.V V GS = 5.5V V GS = 5.V V GS =.5V 3 5 3 5 Drain Source Voltage : V DS [V] Drain Source Voltage : V DS [V] 6/.3 Rev.B
Electrical characteristic curves Drain Source Breakdown Voltage : V (BR)DSS [V] Fig.9 Breakdown Voltage vs. Junction Temperature 9 85 8 75 7 65 6 55 5 5 5 5 5 75 5 5 Junction Temperature : T j [ C] Fig. Typical Transfer Characteristics... V DS = V T a =5ºC T a =75ºC T a = 5ºC 3 5 6 7 8 9 Gate Source Voltage : V GS [V] Gate Threshold Voltage : V GS(th) [V] Fig. Gate Threshold Voltage vs. Junction Temperature 5 3 V DS = V I D = m 5 5 5 5 75 5 5 Junction Temperature : T j [ C] Transconductance : g fs [S] Fig. Transconductance vs. Drain Current. V DS = V T a = 5ºC T a =75ºC T a =5ºC... 7/.3 Rev.B
Electrical characteristic curves Static Drain Source OnState Resistance : R DS(on) [mw] Fig.3 Static Drain Source On State Resistance vs. Gate Source Voltage 35 3 5 5 I D = I D = 6 8 6 8 Gate Source Voltage : V GS [V] Static Drain Source OnState Resistance : R DS(on) [W] Fig. Static Drain Source On State Resistance vs. Junction Temperature.6.5..3.. V GS = V I D = I D = 5 5 5 Junction Temperature : T j [ºC] Static Drain Source OnState Resistance : R DS(on) [W] Fig.5 Static Drain Source On State Resistance vs. Drain Current. V GS = V T a =5ºC T a =75ºC T a = 5ºC... 8/.3 Rev.B
Electrical characteristic curves Capacitance : C [pf] Switching Time : t [ns] Fig.6 Typical Capacitance vs. Drain Source Voltage f = MHz V GS = V C rss C iss C oss.. Drain Source Voltage : V DS [V] Fig.8 Switching Characteristics t d(on) t r.. t f V DD 8V V GS = V R G = W T a = 5ºC t d(off) Gate Source Voltage : V GS [V] Coss Stored Energy : E OSS [uj] Fig.7 Coss Stored Energy 8 6 Drain Source Voltage : V DS [V] Fig.9 Dynamic Input Characteristics 8 6 8 6 6 V DD 8V I D = 6 8 Total Gate Charge : Q g [nc] 9/.3 Rev.B
Electrical characteristic curves Inverse Diode Forward Current : I S [] Fig. Inverse Diode Forward Current vs. Source Drain Voltage. V GS =V T a =5ºC T a =75ºC T a = 5ºC...5..5. Source Drain Voltage : V SD [V] Fig. Reverse Recovery Time vs.inverse Diode Forward Current Reverse Recovery Time : t rr [ns] V GS = V di / dt = / ms Inverse Diode Forward Current : I S [] /.3 Rev.B
Measurement circuits Fig. Switching Time Measurement Circuit Fig. Switching Waveforms Fig. Gate Charge Measurement Circuit Fig. Gate Charge Waveform Fig.3 valanche Measurement Circuit Fig.3 valanche Waveform Fig. dv/dt Measurement Circuit Fig. dv/dt Waveform Fig.5 di/dt Measurement Circuit Fig.5 di/dt Waveform /.3 Rev.B
Dimensions ( : mm) TOFM D E E φ p F b L Q e b x c DIM MILIMETERS INCHES MIN MX MIN MX 6.6 7.6.65.693.8..7.87.8 5..583.66 6.8 7..68.83 b.7.85.8.33 b..5.3.59 c.7.85.8.33 D 9.9.3.39.6 E..8.73.89 e.5. E.7 3..6.8 F.8 3...6 L.5.5.53.9 p 3. 3..8.3 Q. 3..83. x.38.5 Dimension in mm / inches /.3 Rev.B
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