Si9EDH Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) SOT-6 SC-7 (6-LEADS).8 at V GS =. V.8.6 at V GS =. V.. at V GS =.8 V. FEATURES Halogen-free According to IEC 69-- Definition TrenchFET Power MOSFETs:.8 V Rated ESD Protected: V Thermally Enhanced SC-7 Package Compliant to RoHS Directive /9/EC APPLICATIONS Load Switching PA Switch Level Switch D D S 6 D Marking Code k k G G CA XX YY Lot Traceability and Date Code G G D S Part # Code Top View Ordering Information: Si9EDH-T-E (Lead (Pb)-free) Si9EDH-T-GE (Lead (Pb)-free and Halogen-free) S S ABSOLUTE MAXIMUM RATINGS T A = C, unless otherwise noted Parameter Symbol s Steady State Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS ± Continuous Drain Current (T J = C) a T A = C.8. I D T A = 8 C.9.8 A Pulsed Drain Current I DM Continuous Diode-Current (Diode Conduction) a I S.6.8 Maximum Power Dissipation a T A = C.7.7 P D W T A = 8 C.8. Operating Junction and Storage Temperature Range T J, T stg - to C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient a t s 7 R thja Steady State 7 C/W Maximum Junction-to-Foot (Drain) Steady State R thjf 8 Notes: a. Surface mounted on " x " FR board. Document Number: 78 S--Rev. B, -May-
Si9EDH Drain-Source On-State Resistance a R DS(on) SPECIFICATIONS T J = C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage V GS(th) V DS = V GS, I D = µa. V V DS = V, V GS = ±. V ± µa Gate-Body Leakage I GSS V DS = V, V GS = ± V ± ma V DS = 6 V, V GS = V Zero Gate Voltage Drain Current I DSS V DS = 6 V, V GS = V, T J = 8 C µa On-State Drain Current a I D(on) V DS = V, V GS =. V A V GS =. V, I D =.99 A.8.6 Ω V GS =. V, I D =. A..8 V GS =.8 V, I D =. A.. Forward Transconductance a g fs V DS = V, I D =. A.6 S Diode Forward Voltage a V SD I S =.8 A, V GS = V.8. V Dynamic b Total Gate Charge Q g.6 Gate-Source Charge Q gs V DS = V, V GS =. V, I D =. A. nc Gate-Drain Charge Q gd. Turn-On Delay Time t d(on) 7 Rise Time t r V DD = V, R L = Ω 8 Turn-Off Delay Time t d(off) I D. A, V GEN =. V, R g = 6 Ω ns Fall Time t f Notes a. Pulse test; pulse width µs, duty cycle % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS C, unless otherwise noted 8 - Gate Current (ma) I GSS 6 - Gate Current (µa) I GSS.. T J = C T J = C 8 6 Gate Current vs. Gate-Source Voltage. 6 9 Gate Current vs. Gate-Source Voltage Document Number: 78 S--Rev. B, -May-
Si9EDH TYPICAL CHARACTERISTICS C, unless otherwise noted.. T C = - C. V GS = V thru V. C - Drain Current (A) I D.. V I D - Drain Current (A). C.. V. V DS - Drain-to-Source Voltage (V) Output Characteristics...... Transfer Characteristics.6. - On-Resistance (Ω) R DS(on).... V GS =.8 V V GS =. V V GS =. V C- Capacitance (pf) 8 6 C iss C oss...... I D - Drain Current (A) On-Resistance vs. Drain Current C rss 8 6 V DS - Drain-to-Source Voltage (V) Capacitance.6 - Gate-to-Source Voltage (V) V DS = V I D =. A - On-Resistance (Normalized) R DS(on)... V GS =. V I D =. A V GS.8...6.9.. Q g - Total Gate Charge (nc) Gate Charge.6 - - 7 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature Document Number: 78 S--Rev. B, -May-
Si9EDH TYPICAL CHARACTERISTICS C, unless otherwise noted.6 - Source Current (A) I S T J = C T J = C - On-Resistance (Ω) R DS(on).... I D =. A......6.8.. V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage. On-Resistance vs. Gate-to-Source Voltage. I D = µa Variance (V) V GS(th) -. -. Power (W) -. -. - - 7 T J - Temperature ( C) Threshold Voltage.. 6 Time (s) Single Pulse Power, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle =.. Notes:.. P DM. t t t. Duty Cycle, D = t.. Per Unit Base = R thja = 7 C/W. T JM - T A = P DM Z (t) thja Single Pulse. Surface Mounted. - - - - 6 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: 78 S--Rev. B, -May-
Si9EDH TYPICAL CHARACTERISTICS C, unless otherwise noted Normalized Effective Transient Thermal Impedance. Duty Cycle =..... Single Pulse. - - - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?78. Document Number: 78 S--Rev. B, -May-
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