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RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA239 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT process : 0.2µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. In Vg 1,2 Vg 3,4 Out Main Features Typical on wafer measurements : Broadband performances 3.0 Noise Figure 30 gain ±1.0 gain flatness Low DC power consumption, 90mA@3.V Chip size : 2.07 X 1.11 X 0.10 mm Gain () 3 30 2 20 1 6 4 3 2 NF () 10 1 30 31 32 33 34 3 36 37 38 39 40 Frequency (GHz) 0 Main Characteristics Tamb. = 2 C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 36 40 GHz G Small signal gain 2 30 P1 Output power at 1 gain compression 8 10 m NF Noise figure 3.0 4.0 ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DSCHA2392240-28-Aug.-02 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46-91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

36-40GHz Low Noise Amplifier Electrical Characteristics Tamb = +2 C, = 3.V Symbol Parameter Min Typ Max Unit Fop Operating frequency range (1) 36 40 GHz G Small signal gain (1) 2 30 G Small signal gain flatness (1) ±1. Gsb Gain ripple over 40MHz ( within -30 ; +7 C ) 0. pp Is Reverse isolation (1) 3 40 P1 Output power at 1 gain compression 8 10 m VSWRin Input VSWR (1) 2.:1 3.0:1 VSWRout Output VSWR (1) 2.:1 3.0:1 NF Noise figure (2) 3.0 4.0 c DC Voltage Vg -2 3. 4 +0.4 V V Id Bias current (2) 90 ma (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. (2) 90 ma is the typical bias current used for on wafer measurements, with adjusting Vg1,2 voltage for optimum noise figure and Vg3,4 adjusting for maximum gain. Absolute Maximum Ratings Tamb. = 2 C (1) Symbol Parameter Values Unit Drain bias voltage 4. V Vg Gate bias voltage -2.0 to +0.4 V g Maximum drain to gate voltage ( - Vg) +.0 V Id Drain bias current 200 ma Pin Maximum peak input power overdrive (2) +1 m Ta Operating temperature range -40 to +8 C Tstg Storage temperature range - to +12 C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA2392240-28-Aug.-02 2/6 Specifications subject to change without notice

36-40GHz Low Noise Amplifier CHA239 Typical Scattering Parameters ( On wafer Sij measurements ) Bias Conditions : = 3. Volt, Id = 90 ma. Freq. GHz S11 S11 S12 S12 10 -,24-10,46-6,39-137,29-24,0-93,70-6,44-13,98 11 -,01-18,16 -,20-143,40-2,1-112,11-6,2-142,09 12-4,78-16,6-3,92-14,87-26,7-128,23-6, -148,02 13-4,69-174,08-1,99-164,6-26,78-139,11-6,44-11,89 14-4,48 178,30-0,31 17,46-29,21-171,28-6,37-17,82 1-4,30 170,74-0,32 148,72-29,88-14,86-6,22-163,81 16-4,14 163,09-49,22 142,18-31,36-164,90-6,10-169,8 17-4,06 1,1-49,1 127,08-32,88-167,67 -,89-17,6 18-3,96 147,86-48,70 10,03-3,34 177,24 -,79 177,73 19-3,90 139,92-1,67 10,23-38,2-17,62 -,6 172,92 20-3,86 131,40-0,3 9,30-38,79-162,11 -,26 16,80 21-3,87 122,89-49,6 83,3-38,83-167,49-4,99 18,13 22-3,89 113,01-49,9 72,64-46,84 17,47-4,88 10,61 23-4,01 103,0-49,29 63,32-41,7 21,0-4,7 142,43 24-4,20 92,06-48,0 44,03-30,98 8,81-4,67 134,00 2-4,4 79,42-48,3 23,21-23,89-1,06-4,8 124,88 26 -,02 6,00-49,93-1,87-17,47-4,3-4,3 11,26 27 -,79 47,39-2,7-14,93-11,19-13,07-4,3 104,69 28-6,86 2,74-8,44-26,41-4,9-23,29-4,0 93,03 29-8,43-4,01-63,19 36,76 2,43-38,2-4,1 79,20 30-10,32-48,9 -,24 4,06 10,00-60,29-4,4 62,4 31-10,6-117,68-3,31-1, 18,04-93,20-4,40 39,47 32-8,00 166,44-3,6-2,02 2,8-144,4-4,42 3,69 33-8,21 89,1-79,13 17,74 30,33 144,38-6,32-46,81 34-11,99 29,31-60,4-9,3 30,68 82,74-9,78-94,9 3-1,87-33,40-9,01-74,6 30,91 36,21-10,0-134,3 36-14,87-104,81-7,3-11,67 31,07-6,18-10,26-167,64 37-11,78-16,28-6,31 10,87 31,0-47,23-9,47 163,94 38-9,8 10,77-4,01 109,01 30,82-86,98-9,3 139,99 39-9,90 110,22-3,2 84,99 30,03-124,36-10,02 120,62 40-10,31 70,60-2,00 74,63 29,21-19, -10,97 107,97 41-11,12 23,32-49,03 82,09 28,21 167,67-12,82 99,68 42-10,97-34,96-44,98 72,62 26,87 13,99-12,78 101,14 43-11,41-81,68-44,03 33,9 2,36 111,44-12,23 88,12 44-10,12-107,79-43,67 1,3 24,92 87,03-14,1 73,36 4-9,49-124,0-43,94-3,0 24,7 60,0-1,44 63,47 46-8,37-137,10-42,7-16,03 24,33 31,6-18,63 37,49 47-6,94-141,6-42,19-36,0 24,14-0,62-26,0-44,90 48-4,6-148,72-42,90-62,08 23,38-38,4-16,32-10,01 49-2,37-162,9-4,30-98,6 21,22-76,12-11,1 172,71 0-1,12-178,98-46,39-149,92 18,32-110,4-9,10 14,34 S21 S21 S22 S22 Ref. : DSCHA2392240-28-Aug.-02 3/6 Specifications subject to change without notice

36-40GHz Low Noise Amplifier Typical on Wafer Measurements Tamb = +2 C s=3.v and Id=90mA 30 Gain&Rloss () 20 10 0-10 S11 S21 S22-20 30 3 40 4 0 Frequency (GHz) Gain () 3 30 2 20 1 10 6 4 3 2 1 NF () 30 31 32 33 34 3 36 37 38 39 40 Frequency (GHz) 0 Ref. : DSCHA2392240-28-Aug.-02 4/6 Specifications subject to change without notice

36-40GHz Low Noise Amplifier CHA239 Chip Assembly and Mechanical Data To d DC Drain supply feed 100pF IN OUT To Vgs1 DC Gate supply feed 100pF 100pF To Vgs2 DC Gate supply feed Note : Supply feed should be capacitively bypassed. 700 1000 2070 +/-3 20 20 1110 +/-3 880 1480 Bonding pad positions. ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA2392240-28-Aug.-02 /6 Specifications subject to change without notice

36-40GHz Low Noise Amplifier Typical Bias Tuning for Low Noise Operation The circuit schematic is given below : 100 100 0 0 IN OUT Vg 1,2 Vg 3,4 For low noise operation, a separate access to the gate voltages of the two first stages ( Vg1,2 ), and of the two last stage ( Vg3,4 ) is provided. Nominal bias is obtained for a typical current of 60 ma for the output stages and 30 ma for the two first stages ( 90 ma for the amplifier ). The first step to bias the amplifier is to tune Vg1,2 = -1V, and Vg3,4 to drive 60 ma for the full amplifier. Then Vg1,2 is increased to obtain 90 ma of current through the amplifier. A fine tuning of the noise figure may be obtained by modifying the Vg1,2 bias voltage, but keeping the previous value for Vg3,4. It is possible to reduce the total DC current by biasing Vg3,4 to a more negative value. The consequences will be a reduction of gain and of the output power capabilities of the amplifier. could be adjust in such a way that the s ( Drain to Source voltage of the internal transistor ) is kept below 3.V, knowing that all the transistors have the same sizes and with the given resistors. Ordering Information Chip form : CHA239-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA2392240-28-Aug.-02 6/6 Specifications subject to change without notice