Preliminary RFPA52.V to 5.V, 2.GHz to 2.5GHz Integrated PA Module Package: Laminate, mm x mm x mm RFIN Input Bias Match Circuit PA_EN Features P OUT = 2dBm, 5V < % Dynamic EVM db Typical Gain High PAE Integrated Input and Output 5Ω Match Integrated Power Detector Integrated Harmonic Filtering Applications WiFi 2. b/g/n Applications Consumer Premise Equipment (CPE) Picocell; Femtocell Data Cards and Terminals Wireless Access Points, Gateways, Routers and Set Top Box Applications VCC NC/ Pdet 2 9 Output 5 Match 6 Functional Block Diagram RFOUT Product Description RFPA52 is a three-stage power amplifier (PA) designed for 2.b/g/n applications. The integrated input and output 5Ω match eliminates the need for any external matching components and greatly reduces layout area, bill of materials (BOM) and manufacturability cost in the customer application. The RFPA52 is manufactured on an advanced InGaP heterojunction bipolar transistor (HBT) process. This PA is capable of achieving linear power up to 2dBm with an EVM < % while maintaining excellent power added efficiency (PAE). The device is provided in a mm x mm x mm, -pin laminate package and it meets or exceeds the power requirements of IEEE2.b/g/n WiFi RF systems. Vreg Ordering Information RFPA52SB 5-Piece bag RFPA52SR -Piece reel RFPA52TR 25-Piece reel RFPA52SQ 25-Piece bag RFPA52PCK- RFPA52 Eval board with 5-piece bag RFPA52PCK- RFPA52 Balanced eval board with 5-piece bag RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 22, RF Micro Devices, Inc. of
RFPA52 Preliminary Absolute Maximum Ratings Parameter Rating Unit Supply Voltage (RF Applied) -.5 to +5.5 V Supply Voltage (No RF Applied) -.5 to +6. V DC Supply Current ma Input RF Power with 5Ω Output dbm Load Maximum VSWR with no damage : Operating Ambient Temperature - to +5 C Storage Temperature - to +5 C Moisture Sensitivity MSL Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter Specification Min. Typ. Max. Unit Condition V CC = 5.V, V REG = 2.9V, temperature = 25 C, Typical Conditions MSC HT2 and HT, frequency = 22MHz to 2MHz unless otherwise noted. Tx Performance - g/n Compliance with standard 2.g/n Frequency 22 2.n Output Power 26.5 dbm Dynamic EVM (n) 2.5 % 2.g Output Power 2 dbm OFDM 6QAM 5Mbps Dynamic EVM (g) 2.5 % Second Harmonic -2 dbm/mhz At rated P OUT Third Harmonic - dbm/mhz Gain db 2 db Temperature - C to +5 C Power Detect Range. 2. V P OUT = dbm to 2dBm Power Detect Voltage..6 2. V At rated P OUT Input Return Loss - Tx input pin 5 db In specified frequency band Output Return Loss at ANT pin 5 db Operating Current 52 ma At rated P OUT Quiescent Current 5 5 ma V CC = 5., V CONTROL = V and RF = OFF PAE (Power Added Efficiency) 2 % At rated P OUT P DOWN Current - V CC Supply ma PA_EN = V, V CC = 5V, V REG = 2.9V (includes I REG ) I REG 5 ma V CC Leakage Current μa V CC =5V, V REG = V, PA_EN=V Operating Power Supply - V CC 5 5.25 V V REG Voltage (at V REG pin of Eval board) 2.5 2.9. V Turn-on time from setting of V REG S ns Output stable to within 9% of final gain Turn-off time from setting of V REG S ns Stability : No spurs above -dbm CW PdB dbm 2 of
Preliminary RFPA52 Parameter Typical Conditions (continued) Specification Min. Typ. Max. Unit Condition Tx Performance - Generic ESD Human Body Model V All pins Charge Device Model V All pins Thermal Resistance R TH_I C/W V CC =5V, P OUT = 2dBm, 6QAM 5Mbps, duty T J-MAX 5 C cycle = %, heated stage = 5 C Pin Names and Descriptions Pin Name Description RFIN RF input, is internally matched to 5Ω. DC Blocked 2 Ground connection. VCC This pin is connected internally to the collectors of RF device. To achieve specified performance, the layout of the pin should match the Recommended Land Pattern NC No Connection internal, Can be grounded or left open 5 PDET Power detector provides an output voltage proportional to the RF output power level. 6 RFOUT RF output, is internally matched to 5Ω. DC Blocked Ground connection. Ground connection. 9 VREG PA bias voltage. This pin requires regulated supply for best performance. PA_EN PA Enable pin, Apply <.6V DC to turn PA off. Apply.5V DC to 5V DC to enable the PA. Pkg Base Ground connection. The back side of the package should be connected to the ground plane through as short connection as possible, e.g., PCB vias under the device are recommended. of
RFPA52 Preliminary Pin Out RFIN PA_EN 2 9 Vreg VCC NC/ Pdet 5 6 RFOUT of
Preliminary RFPA52 Package Drawing 5 of
RFPA52 Preliminary Applications Schematic PA_EN RFIN RFIN PA_EN 2 Vreg 9 Vreg VCC VCC.uF NC/ 5 Pdet RFOUT 6 RFOUT Pdet For additional recommendations on system level applications and circuits, contact RFMD WCBU Applications Group at WCBUApps@RFMD 6 of
Preliminary RFPA52 RFPA52 Performance Plots RFPA52: EVM vs. Output Power (OFDM 5Mbps; Vcc=5v; VREG=2.9v; 5% duty cycle; Temp=25C) RFPA52: EVM vs. Output Power ( MCS HT; Vcc=5v; VREG=2.9v; 5% duty cycle; Temp=25C) 9 9 6 6 EVM (%) 5 EVM (%) 5 2 2 RFPA52: Power Detector vs. Output Power ( MCS HT; Vcc=5v; VREG=2.9v; 5% duty cycle; Temp=25C) 5 RFPA52: Gain vs. Output Power ( MCS HT; Vcc=5v; VREG=2.9v; 5% duty cycle; Temp=25C) 2.5 2 2 Power Detector (V).5 Gain(dB) 29 2 2.5 26 25 RFPA52: Operating Current vs. Output Power ( MCS HT; Vcc=5v; VREG=2.9v; 5% duty cycle; Temp=25C) RFPA52: VReg Current vs. Output Power ( MCS HT; Vcc=5v; VREG=2.9v; 5% duty cycle; Temp=25C).9 9.. Gain(dB).6.5. VReg Current(mA) 6 5..2 2. of
RFPA52 Preliminary RFPA52 Performance Plots (continued) - RFPA52: 2nd Harmonic vs. Output Power (b Mbps; Vcc=5v; VREG=2.9v; % duty cycle; Temp=25C) - RFPA52: rd Harmonic vs. Output Power ( b Mbps; Vcc=5v; VREG=2.9v; % duty cycle; Temp=25C) -2-2 - - 2nd Harmonic (dbm/mhz) - rd Harmonic (dbm/mhz) - -5-5 -6-6 - - RFPA52: S-Parameters Plots (Vcc=5v; VREG=2.9v; Temp=25C) 2 S2 db - S22-2 S - S2 - -5-6 2 Frequency in GHz of