Complementary N- and P-Channel V (D-S) MOSFET Si6X PRODUCT SUMMARY V DS (V) ( ) I D (ma).7 at V GS =. V 6 N-Channel.8 at V GS =. V. at V GS =.8 V. at V GS = -. V - P-Channel -.6 at V GS = -. V -.7 at V GS = -.8 V - FEATURES Halogen-free According to IEC 69-- Definition TrenchFET Power MOSFETs V ESD Protection Very Small Footprint High-Side Switching Low On-Resistance: N-Channel,.7 P-Channel,. Low Threshold: ±.8 V (Typ.) Fast Switching Speed: ns.8 V Operation Compliant to RoHS Directive /9/EC S G D SOT -6 SC-89 T op V iew 6 D G S Marking Code: A BENEFITS Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS Replace Digital Transistor, Level-Shifter Battery Operated Systems Power Supply Converter Circuits Ordering Information: Si6X-T-GE (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T A = C, unless otherwise noted) Parameter Symbol s Steady State s Steady State Drain-Source Voltage V DS - Notes: a. Surface mounted on FR board. b. Pulse width limited by maximum junction temperature. N-Channel P-Channel Gate-Source Voltage V GS ± 6 Continuous Drain Current (T J = C) a T A = C 8-9 - 7 I D T A = 8 C 7-8 - 6 Pulsed Drain Current b I DM 6-6 Continuous Source Current (Diode Conduction) a I S 8 - - 8 Maximum Power Dissipation a T A = C 8 8 P D T A = 8 C mw Operating Junction and Storage Temperature Range T J, T stg - to C Gate-Source ESD Rating (HBM, Method ) ESD V Unit V ma Document Number: 768 S--Rev. E, -Oct-
Si6X SPECIFICATIONS (T J = C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V DS = V GS, I D = µa N-Ch. Gate Threshold Voltage V GS(th) V DS = V GS, I D = - µa P-Ch -. - Gate Body Leakage I GSS V DS = V, V GS = ±. V Zero Gate Voltage Drain Current On State Drain Current a I DSS I D(on) N-Ch ±. ±. P-Ch ±. ±. V DS = 6 V, V GS = V N-Ch. V DS = - 6 V, V GS = V P-Ch -. - V DS = 6 V, V GS = V, T J = 8 C N-Ch V DS = - 6 V, V GS = V, T J = 8 C P-Ch - V DS = V, V GS =. V N-Ch 7 V DS = - V, V GS = -. V P-Ch - 7 V GS =. V, I D = 6 ma N-Ch..7 V GS = -. V, I D = - ma P-Ch.8. Drain-Source On-State V GS =. V, I D = ma N-Ch..8 Resistance a V GS = -. V, I D = - ma P-Ch..6 V GS =.8 V, I D = ma N-Ch.7. V GS = -.8 V, I D = - ma P-Ch.8.7 Forward Transconductance a V DS = V, I D = ma N-Ch. g fs V DS = - V, I D = - ma P-Ch. Diode Forward Voltage a I S = ma, V GS = V N-Ch.8. V SD I S = - ma, V GS = V P-Ch -.8 -. Dynamic b Total Gate Charge Q g N-Ch 7 N-Channel P-Ch Gate-Source Charge Q gs V DS = V, V GS =. V, I D = ma N-Ch 7 P-Channel P-Ch Gate-Drain Charge Q gd V DS = - V, V GS = -. V, I D = - ma N-Ch P-Ch Turn-On Time t ON N-Channel N-Ch V DD = V, R L = 7 P-Ch I D ma, V GEN =. V, R g = Turn-Off Time t OFF P-Channel N-Ch V DD = - V, R L = 7 P-Ch I D - ma, V GEN = -. V, R g = Notes: a. Pulse test; pulse width µs, duty cycle %. b. Guaranteed by design, not subject to production testing. V µa na µa ma S V pc ns Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 768 S--Rev. E, -Oct-
Si6X N-CHANNEL TYPICAL CHARACTERISTICS (T A = C, unless otherwise noted). - Drain Current (A) I D.8.6.. V GS = V thru.8 V V I D - Drain Current (ma) 8 6 T C = - C C C........ V DS - Drain-to-Source Voltage (V) Output Characteristics...... V GS - Gate-to-Source Voltage (V) Transfer Characteristics. - On-Resistance (Ω)...6.8 V GS =.8 V V GS =. V C - Capacitance (pf) 8 6 C is s C os s V GS = V f = MHz V GS =. V. 6 8 I D - Drain Current (ma) On-Resistance vs. Drain Current C rss 8 6 V DS - Drain-to-Source Voltage (V) Capacitance.6 - Gate-to-Source Voltage (V) V GS V DS = V I D = ma - On-Resistance (Normalized)....8 V GS =. V I D = ma V GS =.8 V I D = ma....6.8 Q g - Total Gate Charge (nc) Gate Charge.6 - - 7 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature Document Number: 768 S--Rev. E, -Oct-
Si6X N-CHANNEL TYPICAL CHARACTERISTICS (T A = C, unless otherwise noted) - Source Current (ma) I S T J = C T J = C T J = C - On-Resistance (Ω) I D = ma I D = ma....6.8... V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage. 6 V GS - Gate-to-Source V oltage (V) On-Resistance vs. Gate-to-Source Voltage... Variance (V) V GS(th).. -. -. I D =. ma I GSS - ( μa).... V GS =. V -. - - 7 Threshold Voltage Variance vs. Temperature. - - 7 I GSS vs. Temperature BV GSS - Gate-to-Source Breakdown Voltage (V) 7 6 - - 7 BV GSS vs. Temperature Document Number: 768 S--Rev. E, -Oct-
Si6X P-CHANNEL TYPICAL CHARACTERISTICS (T A = C, unless otherwise noted). V GS = V thru V. V T J = - C.8 8 C - Drain Current (A) I D.6. V.8 V I D - Drain Current (ma) 6 C......... V DS - Drain-to-Source Voltage (V) Output Characteristics....... V GS - Gate-to-Source Voltage (V) Transfer Characteristics - On-Resistance (Ω)....6.8 V GS =.8 V V GS =. V V GS =. V C - Capacitance (pf) 8 6 C is s C os s V GS = V f = MHz. 6 8 I D - Drain Current (ma) On-Resistance vs. Drain Current C rss 8 6 V DS - Drain-to-Source Voltage (V) Capacitance - Gate-to-Source Voltage (V) V GS V DS = V I D = ma - On-Resistance ( ) (Normalized).6....8 V GS =. V I D = ma V GS =.8 V I D = ma....6.8....6 Q g - Total Gate Charge (nc) Gate Charge.6 - - 7 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature Document Number: 768 S--Rev. E, -Oct-
Si6X P-CHANNEL TYPICAL CHARACTERISTICS (T A = C, unless otherwise noted) I S - Source Current (ma) T J = C T J = C T J = - C - On-Resistance (Ω) I D = ma I D = ma....6.8... V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage. 6 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage... I D =. ma Variance (V) V GS(th).. -. I GSS - (µa)... V GS =. V -.. -. - - 7 Threshold Voltage Variance vs. Temperature. - - 7 I GSS vs. Temperature BV GSS - Gate-to-Source Breakdown Voltage (V) 7 6 - - 7 BV GSS vs. Temperature 6 Document Number: 768 S--Rev. E, -Oct-
N- OR P-CHANNEL TYPICAL CHARACTERISTICS (T A = C, unless otherwise noted) Si6X Normalized Ef fective T ransient Thermal Impedance t Duty Cycle =.. Notes:.. P DM.. t t. Duty Cycle, D = t. Per Unit Base = R th JA = C/W Single Pulse. T JM - T A = P DM Z (t) thja. Surface Mounted. - - - - 6 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?768. Document Number: 768 S--Rev. E, -Oct- 7
Package Information SC-89 6-Leads (SOT-6F) E/ A D e x aaa C D B 6 SECTION B-B E/ C 6 E E x aaa C DETAIL A x bbb C e B 6x b ddd M C A B D L A L A A SEE DETAIL A Notes. Dimensions in millimeters.. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed. mm per dimension E does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed. mm per side.. Dimensions D and E are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body.. Datums A, B and D to be determined. mm from the lead tip.. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between.8 mm and. mm from the lead tip. DIM. MILLIMETERS MIN. NOM. MAX. A.6.8.6 A.. b... c...8 D..6.7 E..6.7 E... e... e.9.. L... L... C-9-Rev. C, -Aug- DWG: 88 Revision: -Aug- Document Number: 76 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Application Note 86 RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead. (.).69 (.7). (.798).9 (.78). (.). (.). (.) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 76 Revision: -Jan-8
Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 7 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9