MBR1545CT /MBRB1545CT /MBR SCHOTTKY RECTIFIER

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Applications: Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: / /MBR1545-1 SCHOTTKY RECTIFIER -1 150 C T J operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Case styles -1 TO-220AB D 2 PAK Mechanical Dimensions: In Inches / mm TO-262 TO-220AB

-1 D 2 PAK Dimensions in Symbol millimeters Min. Typical Max. A 4.55 4.70 4.85 A1 0 0.10 0.25 A2 2.59 2.69 2.89 b 0.71 0.81 0.96 b1 1.27 c 0.36 0.38 0.61 c1 1.17 1.27 1.37 D 8.55 8.70 8.85 D1 6.40 E 10.01 10.16 10.31 E1 7.6 E2 9.98 10.08 10.18 e 2.54 H 14.6 15.1 15.6 L 2.00 2.30 2.70 L1 1.17 1.27 1.40 L2 2.20 L3 0.25BSC e 0-8 e1 5 e2 4 e3 4 TO-262

-1 Marking Diagram: Where XXXXX is YYWWL MBR = Device Type B = Package type 15 = Forward Current (15A) 45 = Reverse Voltage (45) CT/CT-1 = Configuration SSG = SSG YY = Year WW = Week L = Lot Number Cautions:Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package Shipping TO-220AB (Pb-Free) 50pcs / tube D²PAK (Pb-Free) 800pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Symbol Condition Max. Units Peak Inverse Voltage V RWM - 45 V Max. Average Forward I F(AV) 50% duty cycle @T C = 125 C, 7.5(per leg) A rectangular wave form 15(per device) Max. Peak One Cycle Non-Repetitive Surge Current (per leg) I FSM 8.3 ms, half Sine pulse 180 A

-1 Electrical Characteristics: Characteristics Symbol Condition Max. Units Max. Forward Voltage Drop* V F1 @ 15A, Pulse, T J = 25 C 0.84 V V F2 @ 15A, Pulse, T J = 125 C 0.72 V Max. Reverse Current (per I R1 @V R = rated VR 1.0 ma leg) * T J = 25 C I R2 @V R = rated VR 15 ma T J = 125 C Max. Junction Capacitance C T @V R = 5V, T C = 25 C 400 pf (per leg) f SIG = 1MHz Typical Series Inductance L S Measured lead to lead 5 mm from 8.0 nh (per leg) package body Max. Voltage Rate of Change dv/dt - 10,000 V/μs * Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Max. Junction Temperature T J - -55 to +150 C Max. Storage Temperature T stg - -55 to +150 C Maximum Thermal R θjc DC operation 3.0 Resistance Junction to Case C/W Typical Thermal Resistance, R θcs Mounting surface, smooth and 0.50 C/W Case to Heat Sink Maximum Thermal Resistance, Junction to Case(Per package) greased R θja DC operation 60 C/W Approximate Weight wt - 2 g Case Style TO-220AB D 2 PAK TO-262

-1

-1 DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users fail-safe precautions or other arrangement. 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..