2N6517 NPN Epitaxial Silicon Transistor

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2N657 NPN Epitaxial Silicon Transistor Features High oltage Transistor Collector Dissipation: P C (max) = 625mW Complement to 2N6520 Suffix -C means Center Collector (. Emitter 2. Collector 3. Base) Absolute Maximum Ratings T a = 25 C unless otherwise noted August 200 TO-92. Emitter 2. Base 3. Collector 2N657 NPN Epitaxial Silicon Transistor Symbol Parameter alue Units CBO Collector-Base oltage 2N657 2N657C CEO Collector-Emitter oltage 2N657 2N657C EBO Emitter-Base oltage 6 Collector Current 500 ma P C Collector Power Dissipation 625 mw T J Junction Temperature 50 C T STG Storage Temperature -55 ~ 50 C Electrical Characteristics T a = 25 C unless otherwise noted Symbol Parameter Conditions Min. Max. Units B CBO Collector-Base Breakdown oltage 2N657 2N657C B CEO Collector-Emitter Breakdown oltage * 2N657 2N657C = 00µA, I E = 0 = 00µA, I E = 0 = ma, I B = 0 = ma, I B = 0 B EBO Emitter-Base Breakdown oltage I E = 0µA, = 0 6 BO Collector Cut-off Current CB = 250, I E = 0 50 na I EBO Emitter Cut-off Current EB = 5, = 0 50 na h FE DC Current Gain * 2N657/2N657C 2N657/2N657C 2N657/2N657C 2N657/2N657C 2N657/2N657C 2N657C CE = 0, = ma CE = 0, = 0mA CE = 0, = 30mA CE = 0, = 50mA CE = 0, = 00mA CE = 0, = 5mA 20 30 30 20 5 50 200 200 200 200 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N657 Rev. B

Electrical Characteristics (Continued) T a = 25 C unless otherwise noted Symbol Parameter Conditions Min. Max. Units CE(sat) Collector-Emitter Saturation oltage = 0mA, I B = ma = 20mA, I B = 2mA = 30mA, I B = 3mA = 50mA, I B = 5mA BE(sat) Base-Emitter Saturation oltage = 0mA, I B = ma = 20mA, I B = 2mA = 30mA, I B = 3mA C ob Output Capatitance CB = 20, I E = 0, f = MHz 6 pf f T Current Gain Bandwidth Product * = 0mA, CE = 20, f = 20MHz 40 200 MHz BE(on) Base-Emitter On oltage = 00mA, CE = 0 2 * Pulse Test: Pulse Width 300µs, Duty Cycle 2% 0.3 0.35 0.5 0.75 0.85 0.9 2N657 NPN Epitaxial Silicon Transistor 200 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N657 Rev. B 2

Typical Performance Characteristics h FE, DC CURRENT GAIN 000 00 0 0. 0 00 000 Figure. DC Current Gain CE = 0 CE (sat) [], SATURATION OLTAGE 00 0 0. = 0 I B 0.0 0 00 000 Figure 2. Saturation oltage 2N657 NPN Epitaxial Silicon Transistor BE (sat) [], SATURATION OLTAGE = 0 I B 0. 0 00 000 I EBO [na], Emitter Cut Off Current 00 0 0. 0.0 E-3 2 3 4 5 6 EB [], EMITTER-BASE OLTAGE Figure 3. Saturation oltage Figure 4. Emitter Cut Off Current 0000.6 BO [na], Collector CutOff Current 000 00 0 0. 50 00 50 200 250 300 CB [], COLLECTOR-BASE OLTAGE BE (on) [], BASE-EMITTER ON OLTAGE.4.2.0 0.8 0.6 CE = 0 0.4 0 00 000 Figure 5. Collector CutOff Current Figure 6. Base-Emitter On oltage 200 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N657 Rev. B 3

Typical Performance Characteristics (Continued) C CB [pf], Collector-Base Capacitance 2.0.8.6.4.2.0 0 20 40 60 80 00 CB [], COLLECTOR-BASE OLTAGE Figure 7. Output Capacitance f = MHz C EB [pf], Emitter-Base Capacitance 50 45 40 35 30 25 20.0.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 EB [], EMITTER-BASE OLTAGE Figure 8. Input Capacitance f = MHz 2N657 NPN Epitaxial Silicon Transistor 00 000 ft [MHz], Current Gain Bandwidth 0 0 00 t d, t r & t ON [ns], SWITCHING TIME 00 t ON t r t d CC =00 =5I B =-5I B2, Ta=25 o C 0 0 00 Figure 9. Current Gain Bandwidth Product Figure 0. Resistive Load Switching 0000 t OFF t stg, t f & t OFF [ns], SWITCHING TIME 000 00 t stg t f CC =00 =5I B =-5I B2, Ta=25 o C 0 0 00 Figure. Resistive Load Switching 200 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N657 Rev. B 4

Physical Dimensions 3.86MAX 0.46 ±0.0.27TYP [.27 ±0.20].02 ±0.0 0.38 +0.0 0.05 4.58 +0.25 0.5 3.60 ±0.20.27TYP [.27 ±0.20] (R2.29) TO-92 (0.25) 4.47 ±0.40 4.58 ±0.20 0.38 +0.0 0.05 2N657 NPN Epitaxial Silicon Transistor Dimensions in Millimeters 200 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N657 Rev. B 5

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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative / In Design First Production Full Production Not In Production Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I49 Fairchild Semiconductor Corporation www.fairchildsemi.com