2N657 NPN Epitaxial Silicon Transistor Features High oltage Transistor Collector Dissipation: P C (max) = 625mW Complement to 2N6520 Suffix -C means Center Collector (. Emitter 2. Collector 3. Base) Absolute Maximum Ratings T a = 25 C unless otherwise noted August 200 TO-92. Emitter 2. Base 3. Collector 2N657 NPN Epitaxial Silicon Transistor Symbol Parameter alue Units CBO Collector-Base oltage 2N657 2N657C CEO Collector-Emitter oltage 2N657 2N657C EBO Emitter-Base oltage 6 Collector Current 500 ma P C Collector Power Dissipation 625 mw T J Junction Temperature 50 C T STG Storage Temperature -55 ~ 50 C Electrical Characteristics T a = 25 C unless otherwise noted Symbol Parameter Conditions Min. Max. Units B CBO Collector-Base Breakdown oltage 2N657 2N657C B CEO Collector-Emitter Breakdown oltage * 2N657 2N657C = 00µA, I E = 0 = 00µA, I E = 0 = ma, I B = 0 = ma, I B = 0 B EBO Emitter-Base Breakdown oltage I E = 0µA, = 0 6 BO Collector Cut-off Current CB = 250, I E = 0 50 na I EBO Emitter Cut-off Current EB = 5, = 0 50 na h FE DC Current Gain * 2N657/2N657C 2N657/2N657C 2N657/2N657C 2N657/2N657C 2N657/2N657C 2N657C CE = 0, = ma CE = 0, = 0mA CE = 0, = 30mA CE = 0, = 50mA CE = 0, = 00mA CE = 0, = 5mA 20 30 30 20 5 50 200 200 200 200 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N657 Rev. B
Electrical Characteristics (Continued) T a = 25 C unless otherwise noted Symbol Parameter Conditions Min. Max. Units CE(sat) Collector-Emitter Saturation oltage = 0mA, I B = ma = 20mA, I B = 2mA = 30mA, I B = 3mA = 50mA, I B = 5mA BE(sat) Base-Emitter Saturation oltage = 0mA, I B = ma = 20mA, I B = 2mA = 30mA, I B = 3mA C ob Output Capatitance CB = 20, I E = 0, f = MHz 6 pf f T Current Gain Bandwidth Product * = 0mA, CE = 20, f = 20MHz 40 200 MHz BE(on) Base-Emitter On oltage = 00mA, CE = 0 2 * Pulse Test: Pulse Width 300µs, Duty Cycle 2% 0.3 0.35 0.5 0.75 0.85 0.9 2N657 NPN Epitaxial Silicon Transistor 200 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N657 Rev. B 2
Typical Performance Characteristics h FE, DC CURRENT GAIN 000 00 0 0. 0 00 000 Figure. DC Current Gain CE = 0 CE (sat) [], SATURATION OLTAGE 00 0 0. = 0 I B 0.0 0 00 000 Figure 2. Saturation oltage 2N657 NPN Epitaxial Silicon Transistor BE (sat) [], SATURATION OLTAGE = 0 I B 0. 0 00 000 I EBO [na], Emitter Cut Off Current 00 0 0. 0.0 E-3 2 3 4 5 6 EB [], EMITTER-BASE OLTAGE Figure 3. Saturation oltage Figure 4. Emitter Cut Off Current 0000.6 BO [na], Collector CutOff Current 000 00 0 0. 50 00 50 200 250 300 CB [], COLLECTOR-BASE OLTAGE BE (on) [], BASE-EMITTER ON OLTAGE.4.2.0 0.8 0.6 CE = 0 0.4 0 00 000 Figure 5. Collector CutOff Current Figure 6. Base-Emitter On oltage 200 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N657 Rev. B 3
Typical Performance Characteristics (Continued) C CB [pf], Collector-Base Capacitance 2.0.8.6.4.2.0 0 20 40 60 80 00 CB [], COLLECTOR-BASE OLTAGE Figure 7. Output Capacitance f = MHz C EB [pf], Emitter-Base Capacitance 50 45 40 35 30 25 20.0.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 EB [], EMITTER-BASE OLTAGE Figure 8. Input Capacitance f = MHz 2N657 NPN Epitaxial Silicon Transistor 00 000 ft [MHz], Current Gain Bandwidth 0 0 00 t d, t r & t ON [ns], SWITCHING TIME 00 t ON t r t d CC =00 =5I B =-5I B2, Ta=25 o C 0 0 00 Figure 9. Current Gain Bandwidth Product Figure 0. Resistive Load Switching 0000 t OFF t stg, t f & t OFF [ns], SWITCHING TIME 000 00 t stg t f CC =00 =5I B =-5I B2, Ta=25 o C 0 0 00 Figure. Resistive Load Switching 200 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N657 Rev. B 4
Physical Dimensions 3.86MAX 0.46 ±0.0.27TYP [.27 ±0.20].02 ±0.0 0.38 +0.0 0.05 4.58 +0.25 0.5 3.60 ±0.20.27TYP [.27 ±0.20] (R2.29) TO-92 (0.25) 4.47 ±0.40 4.58 ±0.20 0.38 +0.0 0.05 2N657 NPN Epitaxial Silicon Transistor Dimensions in Millimeters 200 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N657 Rev. B 5
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