RT9276. Synchronous Boost Converter with Voltage Detector. General Description. Features. Applications. Ordering Information. Pin Configurations

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RT976 Synchronous Boost Converter with Voltage Detector General Description The RT976 is a synchronous boost converter, which is based on a fixed frequency Pulse-Width-Modulation (PWM) controller using a synchronous rectifier to obtain maximum efficiency. The converter provides a power supply solution for products powered by a variety of batteries such as single cell, dual cell alkaline, NiMH and NiCd battery. At light load currents, the converter enters power save mode to maintain a high efficiency over a wide load current range. The output voltage can be programmed by an external resistor divider, or fixed at a certain voltage. Moreover, the converter can be disabled to minimize battery drain. During shutdown, the load is completely disconnected from the battery. The maximum peak current in the boost switch is limited to A for current limit. For the RT976, a low-emi mode is implemented to reduce ringing of the inductor phase pin when the converter enters discontinuous conduction mode. Moreover, a voltage detector is built-in in the chip for low battery detection. Ordering Information RT976(- ) Note : Richtek products are : Package Type QW : WDFN-L 3x3 (W-Type) Lead Plating System G : Green (Halogen Free and Pb Free) Boost Default : Adjustable 33 : 3.3V 50 : 5.0V RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-00. Suitable for use in SnPb or Pb-free soldering processes. Features True Load Disconnection During Shutdown Internal Synchronous Rectifier Up to 96% Efficiency Current Mode PWM Operation with Internal Compensation Low Start-Up Voltage Low Quiescent Current Internal Soft-Start Low Battery Comparator Low EMI Converter (Anti-Ringing) Power Save Mode for Improved Efficiency at Light Load Current Over Current Protection Short Circuit Protection Over Temperature Protection Over Voltage Protection Small WDFN-L 3x3 Package RoHS Compliant and Halogen Free Applications All One-Cell, Two-Cell and Three-Cell Alkaline, NiCd, NiMH and Single-Cell Li Batteries Hand-Held Devices WLED Flash Light Pin Configurations (TOP VIEW) EN FB/NC WDFN-L 3x3 Marking Information EW=YM DNN 1 3 4 5 11 P 9 LX 8 7 LBI 6 VBAT EW= : Product Code YMDNN : Date Code 1

Typical Application Circuit VBAT C IN Chip Enable R1 R L RT976 9 LX 6 VBAT 7 LBI P 1 EN FB 3 4 8 R3 R4 C OUT 5, Exposed Pad (11) R5 V OUT R6 Figure 1. Adjustable Output Voltage Boost Converter with Voltage Detector RT976 L 9 LX VBAT C 6 VBAT IN R3 C OUT R1 4 R4 7 LBI R 8 P NC 3 Chip Enable 1 5, Exposed Pad (11) EN V OUT Figure. Fixed Output Voltage Boost Converter with Voltage Detector Functional Pin Description Pin No. Pin Name Pin Function 1 EN Chip Enable (Active High). Boost Output. 3 FB / NC Feedback Input for Adjustable Output Voltage Version / No Internal Connection for Fixed Output Voltage Version. 4 Voltage Detector Output. 5 Ground. 6 VBAT Battery Supply Input. 7 LBI Voltage Detector Input. 8 Power Good Indicator. 9 LX Switching Node. Connect this pin to an inductor. P Power Ground. 11 (Exposed Pad) Ground. The exposed pad must be soldered to a large PCB and connected to for maximum power dissipation.

Function Block Diagram VBAT EN Soft-Start Determine Higher Voltage V REF1 OCP, OTP, OVP Logic UGATE Back Gate FB EA PWM LGATE LX Current Sense P Internal Compensation V REF + - LBI Figure 3. Adjustable Voltage Regulator VBAT EN Soft-Start Determine Higher Voltage V REF1 OCP, OTP, OVP Logic UGATE Back Gate EA PWM LGATE LX Internal Compensation Current Sense V REF + - P LBI Figure 4. Fixed Voltage Regulator 3

Absolute Maximum Ratings (Note 1) Supply Input Voltage, V BAT ---------------------------------------------------------------------------------------------- 0.3V to 6V Boost Output Voltage, V OUT -------------------------------------------------------------------------------------------- 0.3V to 6.5V Switch Output Voltage, LX ---------------------------------------------------------------------------------------------- 0.3V to 6.5V <ns ------------------------------------------------------------------------------------------------------------------------ V to 7.5V Digital Input Voltage, EN, LBI ------------------------------------------------------------------------------------------ 0.3V to 6V Digital Output Voltage,, -------------------------------------------------------------------------------- 0.3V to 6V Others Pin------------------------------------------------------------------------------------------------------------------- 0.3V to 6V Power Dissipation, P D @ T A = 5 C WDFN-L 3x3 ------------------------------------------------------------------------------------------------------------- 1.49W Package Thermal Resistance (Note ) WDFN-L 3x3, θ JA ------------------------------------------------------------------------------------------------------- 70 C/W WDFN-L 3x3, θ JC ------------------------------------------------------------------------------------------------------- 8. C/W Junction Temperature Range -------------------------------------------------------------------------------------------- 150 C Lead Temperature (Soldering, sec.) ------------------------------------------------------------------------------- 60 C Storage Temperature Range -------------------------------------------------------------------------------------------- 65 C to 150 C ESD Susceptibility (Note 3) HBM (Human Body Mode) ---------------------------------------------------------------------------------------------- kv MM (Machine Mode) ------------------------------------------------------------------------------------------------------ 00V Recommended Operating Conditions (Note 4) Supply Input Voltage Range, V BAT ------------------------------------------------------------------------------------- 1.V to 5V Junction Temperature Range -------------------------------------------------------------------------------------------- 40 C to 15 C Ambient Temperature Range -------------------------------------------------------------------------------------------- 40 C to 85 C Electrical Characteristics (V BAT.5V or V BAT = V OUT + 0.7V, V EN = V BAT, C IN = μf, C OUT = μf, T A = 5 C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Pre-charge Current I Pre-chg V IN = 5V -- 0 -- ma DC/DC Stage Minimum Start-Up Input Voltage V BAT I LOAD = 1mA -- 1. -- V Input Voltage Range After Start-Up V BAT 0.8 -- 5 V Output Voltage Range V OUT -- -- 5 V Feedback Reference Voltage V FB For Adjustable Output Voltage 0.49 0.5 0.51 V Output Voltage Accuracy ΔV OUT For Fixed Output Voltage 3 -- 3 % Switching Frequency f LX 0.96 1. 1.44 MHz Maximum Duty Cycle D MAX -- 90 -- % Non-Switching Quiescent Current I Q,NS No Switching -- 0 -- μa Shutdown Current I SHDN V EN = 0, V BAT = 1.V -- 5 μa 4

Parameter Symbol Test Conditions Min Typ Max Unit Protection Over-Temperature Protection T OTP -- 170 -- C Over-Temperature Hysteresis T OTP_Hys -- 40 -- C Over-Current Protection I OCP V OUT = 3.3V 1.6.4 A Over-Voltage Protection V OVP 5.4 -- 6 V Power MOSFET V OUT = 3.3V -- 0 -- N-MOSFET ON-Resistance R DS(ON)_N = 5V -- 00 -- V OUT = 3.3V -- 60 -- P-MOSFET ON-Resistance R DS(ON)_P = 5V -- 40 -- Enable EN Threshold Logic-High V IH Rising 0.8 -- -- Voltage Logic-Low V IL Falling -- -- 0. mω mω V Voltage Detector LBI Voltage Threshold V LBI_Rising 0.49 0.5 0.51 V LBI Voltage Hysteresis V LBI_Hys -- -- mv Output Impedance R ON_ V LBI = 0V, V OUT = 3.3V -- 15 -- Ω Note 1. Stresses beyond those listed Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may affect device reliability. Note. θ JA is measured at T A = 5 C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θjc is measured at the exposed pad of the package. Note 3. Devices are ESD sensitive. Handling precaution is recommended. Note 4. The device is not guaranteed to function outside its operating conditions. 5

Typical Operating Characteristics CIN = μf, COUT = μf, L = 4.7μH, unless otherwise specified. Efficiency (%) Efficiency (%) 0 90 80 70 60 50 40 30 0 Efficiency vs. Load Current VIN = 3V VIN =.4V VIN = 1.V VIN = 0.9V = 3.3V 0 0.001 0.01 0.1 1 0 90 80 70 60 50 40 30 0 Load Current (A) Efficiency vs. Input Voltage IOUT = 0mA IOUT = ma IOUT = 00mA = 3.3V 0 0.9 1.4 1.9.4.9 3.4 Input Voltage (V) Efficiency (%) Efficiency (%) 0 90 80 70 60 50 40 30 0 Efficiency vs. Load Current = 5V 0 0.001 0.01 0.1 1 0 90 80 70 60 50 40 30 0 Load Current (A) Efficiency vs. Input Voltage IOUT = ma IOUT = 0mA VIN = 4.V VIN = 3.6V VIN = 3V VIN =.4V = 5V 0 0.9 1.4 1.9.4.9 3.4 3.9 4.4 4.9 Input Voltage (V) 3.40 Output Voltage vs. Load Current 5. Output Voltage vs. Load Current 3.35 5.1 Output Voltage (V) 3.30 3.5 3.0 3.15 3. VIN = 3V VIN =.4V VIN = 1.V VIN = 0.9V Output Voltage (V) 5.0 4.9 4.8 4.7 VIN = 4.V VIN = 3.6V VIN = 3V VIN =.4V VIN = 1.V VIN = 0.9V 3.05 = 3.3V 3.00 0.001 0.01 0.1 1 6 Load Current (A) 4.6 = 5V 4.5 0.001 0.01 0.1 1 Load Current (A)

6.0 Output Voltage vs. Input Voltage Switching 5.5 Output Voltage (V) 5.0 4.5 4.0 3.5 3.0 IOUT= ma IOUT= 0mA VIN (1V/Div) (50mV/Div) V LX (5V/Div).5 = 5V.0 0.9 1.4 1.9.4.9 3.4 3.9 4.4 4.9 Input Voltage (V) I LX (500mA/Div) VBAT = 1.V, = 3.3V, ILOAD = 0mA Time (50ns/Div) Switching Load Transient Response V IN (V/Div) V OUT (50mV/Div) VIN (V/Div) V OUT (0mV/Div) VLX (5V/Div) ILX (500mA/Div) VBAT =.4V, = 3.3V, ILOAD = 00mA I OUT (0mA/Div) VBAT =.4V, = 3.3V, ILOAD = 0mA to 00mA Time (50ns/Div) Time (500μs/Div) Line Transient Response 1300 Switching Frequency vs. Temperature V IN (V/Div) (0mV/Div) I OUT (0mA/Div) VBAT = 1.8V to.4v, = 3.3V, ILOAD = 0mA Time (500μs/Div) Switching Frequency (khz) 150 0 1150 10 50 00 950 VIN =.4V = 3.3V 900-40 -5-5 0 35 50 65 80 95 1 15 Temperature ( C) 7

0.55 0.54 FB Reference Voltage vs. Temperature Voltage Detector Response FB Reference Voltage (V) 0.53 0.5 0.51 0.50 0.49 0.48 0.47 VIN =.4V 0.46 = 3.3V 0.45-40 -5-5 0 35 50 65 80 95 1 15 LBI (500mV/Div) (V/Div) VBAT = 1.8V, = 5V, R = 00kΩ Time (1ms/Div) Temperature ( C) 8

Application Information The RT976 integrates a high efficiency synchronous stepup DC-DC converter and a low battery detector. To fully utilize its advantages, peripheral components should be appropriately selected. The following information provides detailed description of application. Inductor Selection For a better efficiency in high switching frequency converter, the inductor selection has to use a proper core material such as ferrite core to reduce the core loss and choose low ESR wire to reduce copper loss. The most important point is to prevent core saturation when handling the maximum peak current. Using a shielded inductor can minimize radiated noise in sensitive applications. The maximum peak inductor current is the maximum input current plus half of the inductor ripple current. The calculated peak current has to be smaller than the current limitation in the electrical characteristics. A typical setting of the inductor ripple current is 0% to 40% of the maximum input current. If the selection is 40% 1 IPK = IIN(MAX) + IRIPPLE = 1. IIN(MAX) IOUT(MAX) = 1. η VBAT(MIN) The minimum inductance value is derived from the following equation : [ ] η I V V L = 0.4 I V f IN(MIN) OUT BAT(MIN) OUT(MAX) OUT LX Depending on the application, the recommended inductor value is between.μh and μh. Input Capacitor Selection For better input bypassing, low-esr ceramic capacitors are recommended for performance. A μf input capacitor is sufficient for most applications. For a lower output power requirement application, this value can be decreased Output Capacitor Selection For lower output voltage ripple, low ESR ceramic capacitors are recommended. The tantalum capacitors can be used as well, but their ESR is bigger than ceramic capacitors. The output voltage ripple consists of two components: one is the pulsating output ripple current which flows through the ESR, and the other is the capacitive ripple caused by charging and discharging. V = V + V RIPPLE RIPPLE(ESR) RIPPLE(C) I V V PEAK OUT BAT IPEAK RESR + C OUT f LX Output Voltage Setting Referring to application circuit (Figure 1), the output voltage of the switching regulator (V OUT ) can be set with below equation : R3 = 1+ VFB R4 where V FB = 0.5V (typ.) When the input voltage is larger than output setting voltage 370mV (typ.) the RT976 will be in pre-charge mode. During pre-charge phase, the synchronous P-MOSFET is turned on until the output capacitor is charged to a value close to the input voltage minus 0.V. Then the converter is followed by PWM operation. The adaptive precharge current increases linearly to overcome the loading current in the pre-charge phase. If the loading current is larger than pre-charge current, the RT976 will be in precharge mode until loading current is removed or reduced. Low Battery Voltage Detector The low battery voltage detector is designed to monitor the battery voltage and to generate an error flag when the battery voltage drops below a user-set threshold voltage. The function is active only when the device is enabled. When the device is disabled, the pin is in high impedance. The LBI threshold voltage is 0.5V typically, with mv hysteresis voltage. If the low-battery detection circuit is not used, the LBI pin should be connected to (or to V BAT ) and the pin can be left unconnected. Do not let the LBI pin floating. Thermal Considerations For continuous operation, do not exceed absolute maximum operation junction temperature. The maximum power dissipation depends on the thermal resistance of IC package, PCB layout, the rate of surroundings airflow and temperature difference between junction to ambient. 9

The maximum power dissipation can be calculated by following formula : P D(MAX) = (T J(MAX) T A ) / θ JA where T J(MAX) is the maximum operation junction temperature, T A is the ambient temperature and the θ JA is the junction to ambient thermal resistance. For recommended operating conditions specification, the maximum junction temperature is 15 C. The junction to ambient thermal resistance θ JA is layout dependent. For WDFN-L 3x3 package, the thermal resistance θ JA is 70 C/W on a standard JEDEC 51-7 four- layer thermal test board. The maximum power dissipation at T A = 5 C can be calculated by the following formula : P D(MAX) = (15 C 5 C) / (70 C/W) = 1.49W for WDFN-L 3x3 packages The maximum power dissipation depends on operating ambient temperature for fixed T J(MAX) and thermal resistance θ JA. The Figure 5 of derating curves allows the designer to see the effect of rising ambient temperature on the maximum power dissipation. Maximum Power Dissipation (W) 1.6 Four-Layer PCB 1.4 1. WDFN-L 3x3 1.0 0.8 0.6 0.4 0. 0.0 0 5 50 75 0 15 Ambient Temperature ( C) Layout Consideration For best performance of the RT976, the following layout guidelines must be strictly followed : Input and Output capacitors should be placed close to the IC and connected to ground plane to reduce noise coupling. The and Exposed Pad should be connected to a strong ground plane for heat sinking and noise protection. Keep the main current traces as short and wide as possible. Place the feedback components as close as possible to the IC and keep away from the noisy devices. FB node copper area should be minimized and kept far away from noise sources (LX pin) Cin and Cout should be placed close to the IC and connected to ground plane to reduce noise coupling. C IN C OUT V OUT R3 R4 EN 1 FB/NC 3 4 5 11 P L 9 LX 8 7 LBI 6 VBAT The and Exposed Pad should be connected to a strong ground plane for heat sinking and noise protection. Figure 6. PCB Layout Guide V BAT Figure 5. Derating Curve of Maximum Power Dissipation

Outline Dimension D D L E E 1 SEE DETAIL A e b 1 1 A A1 A3 DETAIL A Pin #1 ID and Tie Bar Mark Options Note : The configuration of the Pin #1 identifier is optional, but must be located within the zone indicated. Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.700 0.800 0.08 0.031 A1 0.000 0.050 0.000 0.00 A3 0.175 0.50 0.007 0.0 b 0.180 0.300 0.007 0.01 D.950 3.050 0.116 0. D.300.650 0.091 0.4 E.950 3.050 0.116 0. E 1.500 1.750 0.059 0.069 e 0.500 0.00 L 0.350 0.450 0.014 0.018 W-Type L DFN 3x3 Package Richtek Technology Corporation 5F, No. 0, Taiyuen Street, Chupei City Hsinchu, Taiwan, R.O.C. Tel: (8863)556789 Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries. 11