SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to Collector Current: I C =.5A Collector Power Dissipation: P C =2W (T C =25 C). Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a =25 C unless otherwise noted Symbol Parameter Ratings Units V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 6 V I C Collector Current.5 A P C Collector Power Dissipation W T J Junction Temperature 50 C T STG Storage Temperature -65 ~ 50 C Electrical Characteristics T a =25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BV CBO Collector-Base Breakdown Voltage I C =00µA, I E =0 40 V BV CEO Collector-Emitter Breakdown Voltage I C =2mA, I B =0 25 V BV EBO Emitter-Base Breakdown Voltage I E =00µA, I C =0 6 V I CBO Collector Cut-off Current V CB =35V, I E =0 00 na I EBO Emitter Cut-off Current V EB =6V, I C =0 00 na h FE h FE2 DC Current Gain V CE =V, I C =5mA V CE =V, I C =00mA 45 85 35 60 300 h FE3 V CE =V, I C =800mA 40 0 V CE (sat) Collector-Emitter Saturation Voltage I C =800mA, I B =80mA 0.28 0.5 V V BE (sat) Base-Emitter Saturation Voltage I C =800mA, I B =80mA 0.98.2 V V BE (on) Base-Emitter On Voltage V CE =V, I C =0mA 0.66 V C ob Output Capacitance V CB =0V, I E =0 9.0 pf f=mhz f T Current Gain Bandwidth Product V CE =0V, I C =50mA 00 90 MHz h FE Classification Classification B C D h FE2 85 ~ 60 20 ~ 200 60 ~ 300
Typical Characteristics SS8050 0.5 000 0.4 0.3 0.2 0. IB = 3.0mA IB = 2.5mA IB = 2.0mA IB =.5mA IB =.0mA IB = 0.5mA hfe, DC CURRENT GAIN 00 0 VCE = V 0 0.4 0.8.2.6 2.0 0. 0 00 000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 0000 000 00 VBE(sat) VCE(sat) IC = 0 IB 0 0. 0 00 000 00 0 VCE = V 0. 0.0 0.2 0.4 0.6 0.8.0.2 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 000 000 Cob [pf], CAPACITANCE 00 0 IE = 0 f = MHz 0 00 ft[mhz], CURRENT GAIN BANDWIDTH PRODUCT 00 0 VCE = 0V 0 00 400 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product 2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8050 Collector Current: I C =.5A Collector Power Dissipation: P C =2W (T C =25 C). Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T a =25 C unless otherwise noted Symbol Parameter Ratings Units V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -6 V I C Collector Current -.5 A P C Collector Power Dissipation W T J Junction Temperature 50 C T STG Storage Temperature -65 ~ 50 C Electrical Characteristics T a =25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BV CBO Collector-Base Breakdown Voltage I C = -00µA, I E =0-40 V BV CEO Collector-Emitter Breakdown Voltage I C = -2mA, I B =0-25 V BV EBO Emitter-Base Breakdown Voltage I E = -00µA, I C =0-6 V I CBO Collector Cut-off Current V CB = -35V, I E =0-00 na I EBO Emitter Cut-off Current V EB = -6V, I C =0-00 na h FE h FE2 DC Current Gain V CE = -V, I C = -5mA V CE = -V, I C = -00mA 45 85 70 60 300 h FE3 V CE = -V, I C = -800mA 40 80 V CE (sat) Collector-Emitter Saturation Voltage I C = -800mA, I B = -80mA -0.28-0.5 V V BE (sat) Base-Emitter Saturation Voltage I C = -800mA, I B = -80mA -0.98 -.2 V V BE (on) Base-Emitter on Voltage V CE = -V, I C = -0mA -0.66 -.0 V C ob Output Capacitance V CB = -0V, I E =0 5 pf f=mhz f T Current Gain Bandwidth Product V CE = -0V, I C = -50mA 00 200 MHz h FE Classification Classification B C D h FE2 85 ~ 60 20 ~ 200 60 ~ 300
Typical Characteristics -0.5 IB=-4.0mA 000 VCE = -V -0.4-0.3-0.2-0. IB=-3.5mA IB=-3.0mA IB=-2.5mA IB=-2.0mA IB=-.5mA IB=-.0mA IB=-0.5mA hfe, DC CURRENT GAIN 00 0-0.4-0.8 -.2 -.6-2.0-0. - -0-00 -000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -0000-000 -00 VBE(sat) VCE(sat) IC=0IB -0-0. - -0-00 -000-00 -0 - VCE = -V -0. -0.0-0.2-0.4-0.6-0.8 -.0 -.2 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage Cob[pF], CAPACITANCE 00 0 f=mhz IE=0 - -0-00 -000 ft[mhz], CURRENT GAIN-BANDWIDTH PRODUCT 000 00 VCE=-0V 0 - -0-00 -000 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product 2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Package Dimensions 4.58 +0.25 0.5 3.86MAX 0.46 ±0.0.27TYP [.27 ±0.20].02 ±0.0 0.38 +0.0 0.05.27TYP [.27 ±0.20] 3.60 ±0.20 (R2.29) (0.25) 4.47 ±0.40 4.58 ±0.20 0.38 +0.0 0.05 Dimensions in Millimeters