NEWSLETTER - Issue #5 January 2017 Editorial MiWaveS project is now close to compleon and a four-month extension has been decided in order to complete the tremendous work on hardware developments and experimental demonstraons undertaken by the consorum. The project is about to fully reach its objecves which were to develop and demonstrate key enabling technologies for the next generaon of high-throughput and low-latency heterogeneous mobile networks based on the flexible spectrum usage of the mmwave frequency bands at 57-66 GHz and 71-86 GHz. Along these three years, the partners have worked on almost all aspects of mmwave wireless communicaon systems needed in future mobile networks, including system definion and architecture, networking funcons and algorithms, mmwave radio and antenna technologies. mmwave electromagnec exposure occurring in realisc scenarios has been invesgated as well. Most of these developments are presented in public deliverables available on our web site (www.miwaves.eu). Recent results on transceiver and antenna technologies are highlighted in this issue of the newsle1er. A very significant effort is allocated to the demonstraon of these developments in order to showcase cu3ng-edge technology soluons with performances sasfying future wireless systems requirements. These soluons are representave of what can be expected in the coming 5-10 years as technologies mature and products are developed by OEM vendors. Preliminary backhaul links demonstraons were completed early 2016 and access links with beam-steering capabilies are now being integrated in our demonstraon pla9orm. Some of these developments have been demonstrated in recent conferences such as the 5G summit in Dresden and the NGMN industrial conference in Frankfurt. A future event will be organized in spring 2017 to present all MiWaveS achievements. Save the dates mmwave wireless access demo at NGMN Industrial Conference (Oct. 2016, Frankfurt). Jan. 25-26, 2017: the 10 th plenary meeng of MiWaveS will be held in Grenoble, France, hosted by CEA. March 19-24, 2017: MiWaveS organizes a full-day convened session on Millimeter wave antenna systems for future broadband communica- on networks in the frame of EuCAP 2017 conference (Paris, France). April 30, 2017: the MiWaveS project will officially end on this date.
Focus on... 60-90 GHz transceiver technology (1/2) MiWaveS aims at demonstrang 5G small-cell access points with interconnecng backhaul links at mmwave frequencies. The access with user terminals occurs in V-band, whereas backhaul links are demonstrated both in V- and E-bands. Several transceivers are needed to implement this demonstraon. V band 65nm CMOS transceiver chip STMicroelectronics provides V band 65nm CMOS transceiver chips to the project. The transceiver is applicable both to access and backhaul applicaons. It is a fully integrated circuit including a transmi1er, receiver and VCO & PLL circuitry to cover the 4 IEEE channels defined between 57 and 66 GHz. The transceiver chip has baseband I&Q Tx inputs/rx outputs for the direct connecon to a digital baseband sub-system. The chip size is 2.8 3.3 mm 2. A cost-effecve BGA (Ball Grid Array) flip-chip module has been fabricated to ease the assembly of the transceiver on a standard applicaon printed circuit board (PCB). 60 GHz transceiver chip in V band user terminal transceiver 65-nm CMOS technology. The 65nm CMOS transceiver chip is used in the 60 GHz user terminal module built on a mul-layer organic substrate (10 10 mm 2 ). The transceiver chip is flipchipped on the bo1om side of the module while two separate linearly-polarized fixed-beam aperture-coupled patch antennas are integrated on the top side for Rx and Tx. The module is further flip-chipped on a larger test PCB for test and demonstraon purposes. V band access point transceiver The phased-array access point front-end includes the 60-GHz 65nm CMOS transceiver presented above associated to a Tx/Rx duplex switch, power spli1ers and four bidireconal phase shiler and amplifier chips. The antenna elements are fed through phase-shiler chips separate from the transceiver in order to make the architecture scalable to different phased-array sizes. This phase shiler chip includes low noise amplifiers, power amplifiers, switches and 3-bit phase shiler circuits, it is fabricated in 55nm BiCMOS technology and its size is 2.0 3.4 mm 2. The LCP module size is 19 19 mm 2 for an antenna array of 2 4 elements. The target is to realize a compact scalable access point transceiver module able to meet various system-level requirements. E band backhaul transceiver Integrated 60 GHz user terminal module; top and bo1om side. Sivers IMA provides 71-76 GHz transceiver modules to the E-band backhaul demonstraons. The transceiver has been augmented by external LO (Local Oscillator) and AFE (Analog Front-End) boards. The external Rx/Tx local oscillators with on/off switching allow the transceiver use in TDD (Time Division Duplex) mode. The AFE board provides the required IF-to-baseband frequency conversion. In order to avoid the leakage of the power amplifier broadband noise to the receiver input, a commercial SPDT duplex waveguide switch has been added to the transceiver waveguide Rx/Tx ports.
Focus on... 60-90 GHz transceiver technology (2/2) Millimetre-wave building block development Special building block developments have been iniated on power amplifiers and frequency synthesizers in order to address two key challenges in mmwave backhaul systems. First, backhaul transmi1ers shall provide a high output power with a good linearity. Secondly, the trend in millimetre-wave backhaul radios is towards high-order modulaon schemes such as 16, 32, 64, 128 and 256 QAM which set very strict constraints on the phase noise of the transceiver local oscillators. V-band and E-band power amplifiers The performance of 28nm CMOS FD-SOI (Fully Depleted Silicon on Insulator) technology has been illustrated by designing, fabricang and tesng a 60-GHz reconfigurable power amplifier. The realized amplifier achieves an outstanding performance in terms of PAE (Power Added Efficiency) 21% at saturated output power, 1dB output compression point of 18.2 dbm and DC power consumpon of 74 mw. An E-band DDAT (Double Distributed Acve Transformer) power amplifier in 55nm BiCMOS technology has been designed and fabricated. The final stage of the amplifier combines the power from four power cells and an output power of 24 dbm has been measured. Besides, several dynamic linearizaon techniques for power amplifiers have been invesgated in order to meet the linearity requirements of modulaon schemes with large peak-to-average power raos (PAPR). 60-GHz power amplifier in 28nm FDSOI technology. V-band and E-band frequency synthesis A frequency synthesizer operang both in V and E band was developed in 55nm BiCMOS technology. The frequency synthesizer includes a unique fraconal PLL and DCXO (Digitally Controlled Crystal Oscillator) to comply with all radio channel allocaons. The 40 GHz VCO is followed by a frequency doubler in order to reach the V or E band LO frequency. The emphasis in the design has been on flexibility and high integraon level. The measured phase noise at 75.6 GHz at 1 MHz carrier offset is -97.7 dbc/hz. A 20 GHz mul-core VCO was demonstrated and its reconfiguraon has been successfully proved by switching on and off the VCO cores. The VCO can be configured to operate with one, two or four tank circuits and the phase noises decreases proporonally to the number of cores. The purpose is to switch on more VCO cores as the number of modulaon levels goes up. 20 GHz mul-core VCO in 55nm BiCMOS technology. A full document detailing all these acvies and results is available on our web site: h1p://www.miwaves.eu/miwaves_d3.6_v1.0.pdf).
Focus on... Antenna technologies for mmwave access and backhaul communicaons Work-package 4 (WP4) of MiWaveS, named Antenna technology for mmwave access and backhauling, and EMF exposure, aims at developing the antenna systems needed to implement the project vision of heterogeneous networks with mmwave small-cell access and backhauling. In parcular, the antennas needed for the demonstraon acvies of MiWaveS have to be designed, fabricated and characterized before being integrated in the final demonstrator. A public deliverable was released with a synthesis of the design and measurement results obtained at month 32 of the project. It reports the specificaons and selected antenna concepts, and provides the main theorecal and experimental results about (i) advanced low-form factor and low-cost antenna solu- ons for integraon in mobile user terminals, (ii) mul beams and beam-steering flat antenna panels for access points, and (iii) direcve antennas for backhauling by considering both mature soluons and advanced steerable antenna concepts. At the user terminal level, fixed-beam in-package integrated antennas operang in V-band (57 66 GHz) are considered in order to focus on low-power, low-cost, and small-size antenna systems needed in future autonomous handheld devices. At the access point level, V-band antenna arrays with electronic beamsteering or beam-switching soluons are needed to provide an extended coverage (communicaon range, angular coverage) as well as enough flexibility to enable spaal mulplexing and interference migaon schemes. For backhauling applicaons in V- and E- (71 76 and 81 86 GHz) frequency bands, very high gain levels are needed for long distance point-to-point links between access points and base-staons; in this case, beam switching capabilies are required to ease deployment operaons, i.e. reduce costs, and migate unexpected displacements of the access point devices. For each applicaon (user terminal, access point, backhauling), several antenna concepts are presented, including numerical and experimental results. The full document is available on our web site: www.miwaves.eu/miwaves_d4.5_v1.0.pdf. Switched-beam antenna array for wireless access at 60 GHz. 60-GHz switched-beam antenna for wireless access. 60-GHz 30-dBi discrete lens antenna for backhaul.
Dissemination Conference papers and workshop presentaons performed in internaonal conferences in the second semester of 2016: Summer school and Workshops: MiWaveS partners organized the following events European School on Antennas: MiWaveS contributed through several talks in the Course on Technologies and Millimeter-Wave Antennas organized by IETR/Univ. of Rennes 1 (4-8 July 2016, Rennes, France); EuMW 2016 (7 Oct. 2016, London, UK): MiWaveS organized the workshop Millimetre-Wave Technologies for 5G Mobile Networks and Short-Range Communicaons, this full-day workshop was composed of 7 presentaons and gathered 37 a1endees; EuCAP 2017 (March 19-24, 2017, Paris): MiWaveS organizes a 10-paper convened session on Millimeter wave antenna systems for future broadband communicaon networks ; this session will include several presentaons reporng MiWaveS research as well as presentaons from other groups. Exhibions: MiWaveS hardware developments were demonstrated at the 5G Summit (29th September, Dresden) and the NGMN Industrial Conference (12.-13th Oct., Frankfurt) with a demo in the booth organized by TUD. Journal papers: F. Foglia Manzillo, M. E1orre, M. Lah, K. Kauo, D. Lelaidier, E. Seguenot, and R. Sauleau, A mullayer LTCC soluon for integrang 5G access point antenna modules, IEEE Trans. Microw. Theory Techn., vol. 64, no. 7, July 2016, pp. 2272-2283. S. Payami, M. Ghoreishi and M. Diana, Hybrid Beamforming for Large Antenna Arrays with Phase ShiLer Selecon, IEEE Trans. on Wireless Communicaons, vol. 15, no. 11, Nov. 2016, pp. 7258-7271. Public deliverables: D3.6: 60-90 GHz transceiver technology (available at www.miwaves.eu); D4.5: Antenna technologies for mmw access and backhaul communicaons (available at www.miwaves.eu). White paper: Publicaon of MiWaveS 2nd White Paper in June 2016 (available at www.miwaves.eu).
Meetings About MiWaveS Duration: Jan. 2014 Dec. 2016 Contract: CNECT-ICT-619563 Project coordinator: Laurent Dussopt laurent.dussopt@cea.fr Visit our website: www.miwaves.eu Follow us on Twitter www.twi1er.com/fp7_miwaves Join us on LinkedIn www.linkedin.com/groups/fp7- MiWaveS-6694097 Consorum Meetings MiWaveS consorum met in Espoo, Finland (Sept. 13-15, 2016, host: Nokia) for its 9th plenary meeng. It was co-located with a workshop with MiWaveS Industrial Advisory Board, which is composed of: Dr Maziar Nekovee (Chief engineer 5G, Samsung Electronics UK) Dr Mythri Hunukumbure (Principal researcher, Samsung Electronics UK) Dr Hermann Brand (Director of Innovaon, ETSI) Dr Guillaume Vivier (Director Advanced Technology, Sequans) Dr Ralf Irmer (Manager Wireless Access Innovaon, Vodafone) Dr Evangelia Georgiadou (Telecommunicaon Engineer, OTE) Dr Federico Boccardi (spectrum management expert, OFCOM) Dr Emmanuel Faussurier (frequency management expert, ANFR) The next and final plenary meeng will take place in Grenoble, France (Jan. 25-26, 2017, host: CEA).