Low-Voltage Single SPDT Analog Switch

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Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (t ON : 7 ns, t OFF : 3 ns), low on-resistance (r DS(on) : Ω) and small physical size (SC7), the DG22 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG22 is built on s low voltage submicron CMOS process. An epitaxial layer prevents latchup. Break-before -make is guaranteed for DG22. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. FEATURES Low Voltage Operation (.8 V to. V) Low On-Resistance - r DS(on) : Ω Typ. Fast Switching - t ON : 7 ns, t OFF : 3 ns Low Leakage TTL/CMOS Compatible 6-Pin SC-7 Package BENEFITS Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space APPLICATIONS Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems Sample and Hold Circuits Pb-free Available RoHS* PLIANT FUNCTIONAL BLOCK DIAGRAM AND P CONFIGURATION SC-7 2 3 6 4 Top View Device Marking: E7xx NO (Source ) NC (Source 2 ) TRUTH TABLE Logic NC NO ON OFF OFF ON ORDERG FORMATION Temp Range Package Part Number - 4 to 8 C SC7-6 DG22DL-T DG22DL-T-E3 * Pb containing terminations are not RoHS compliant, exemptions may apply

ABSOLUTE MAXIMUM RATGS Parameter Limit Unit Referenced to -.3 to + 6,, NC, NO a -.3 to ( +.3) V Continuous Current (NO, NC and Pins) ± Peak Current (Pulsed at ms, % duty cycle) ± 3 ma Storage Temperature (D Suffix) - 6 to C Power Dissipation (Packages) b 6-Pin SO7 c 2 mw Notes: a. Signals on NC, NO, or or exceeding will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 3. mw/ C above 7 C. SPECIFICATIONS ( = 2. V) Parameter Analog Switch Symbol Test Conditions Otherwise Unless Specified = 2. V, ± %, V =.4 or.6 V e Temp a Limits - 4 to 8 C Min b Typ c Max b Unit Analog Signal Range d V NO, V NC V V On-Resistance r ON =.8 V, V =.2 V/.9 V I NO, I NC = ma 2.7 d 2.7 r ON Flatness d r ON 3 Flatness =.8 V, V = to, I NO, I NC = ma r ON Match d Δr ON.2 Switch Off Leakage Current f I NO(off) I NC(off) I (off) = 2.2 V V NO, V NC = V/. V, V =. V/ V - - - d - Channel-On Leakage Current f I (on) = 2.2 V, V NO, V NC = V = V/. V - d - Digital Control Input High Voltage V H.6 Input Low Voltage V L.4 V Input Capacitance d C in 3 pf Input Current f I L or I H V = or - µa Dynamic Characteristics Turn-On Time d t 43 63 ON d 6 V NO or V NC =. V, R L = 3 Ω, C L = 3 pf ns Turn-Off Time d t 23 4 OFF Figures and 2 d 46 Break-Before-Make Time d t d 2 Charge Injection d Q J C L = nf, V GEN = V, R GEN = Ω, Figure 3 7 pc Off-Isolation d OIRR - 63 R L = Ω, C L = pf, f = MHz Crosstalk d X TALK - 64 db.3.3 Ω na N O, N C Off Capacitance d C NO(off) 22 C NC(off) V = or, f = MHz Channel-On Capacitance d C ON 8 pf 2

SPECIFICATIONS ( = 3. V) Parameter Analog Switch Symbol Test Conditions Otherwise Unless Specified = 3 V, ± %, V =.6 or 2. V e Temp a Limits - 4 to 8 C Min b Typ c Max b Unit Analog Signal Range d V NO, V NC V V On-Resistance r ON = 2.7 V, V =.2 V/. V, I NO I NC = ma r r ON Flatness ON.8 Flatness = 2.7 V, V = to, I NO, I NC = ma r ON MatchFlat Δr ON.2 I NO(off) I NC(off) = 3.3 V V NO, V NC = V/3 V, V = 3 V/ V Switch Off Leakage Current f I - (off) - na Channel-On Leakage Current f I (on) = 3.3 V, V NO, V NC = V = V/3 V - - Digital Control Input High Voltage V H 2 Input Low Voltage V L.6 V Input Capacitance d C in 3 pf Input Current f I L or I H V = or - µa Dynamic Characteristics Turn-On Time t 27 47 ON 48 V NO or V NC = 2. V, R L = 3 Ω, C L = 3 pf Turn-Off Time t 7 37 ns OFF Figures and 2 38 Break-Before-Make Time t d Charge Injection d Q J C L = nf, V GEN = V, R GEN = Ω, Figure 3 pc Off-Isolation d OIRR - 63 R L = Ω, C L = pf, f = MHz Crosstalk d X TALK - 64 db NO, NC Off Capacitance d C NO(off) 2 C NC(off) V = or, f = MHz pf Channel-On Capacitance d C ON 7 Power Supply Power Supply Range.8. V Power Supply Current I+ V = or.. µa - -.4.6 2. 2.3 Ω 3

SPECIFICATIONS ( = V) Parameter Analog Switch Symbol Test Conditions Otherwise Unless Specified = V, ± %, V =.8 or 2.4 V e Temp a Limits - 4 to 8 C Min b Typ c Max b Unit Analog Signal Range d V NO, V NC V V On-Resistance r ON = 4. V, V = V/2. V I NO, I NC = ma r ON Flatness d r ON Flatness = 4. V, V = to, I NO, I NC = ma r ON Match d Δr ON.2 Switch Off Leakage Current I NO(off) I NC(off) I (off) = V V NO, V NC = V/4. V, V = 4. V/ V Channel-On Leakage Current I (on) = V, V NO, V NC = V = V/4. V Digital Control Input High Voltage V H 2.4 Input Low Voltage V L.8 V Input Capacitance C in 3 pf Input Current I L or I H V = or - µa Dynamic Characteristics Turn-On Time d t 7 38 ON 39 V NO or V NC = 3 V, R L = 3 Ω, C L = 3 pf ns Turn-Off Time d t 3 32 OFF Figures and 2 33 Break-Before-Make Time d t d Charge Injection d Q J C L = nf, V GEN = V, R GEN = Ω, Figure 3 2 pc Off-Isolation d OIRR - 63 R L = Ω, C L = pf, f = MHz Crosstalk d X TALK - 64 db Source-Off Capacitance d C NO(off) 2 C NC(off) V = or, f = MHz pf Channel-On Capacitance d C ON 6 Notes: a. = 2 C, = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. V = input voltage to perform proper function. f. Guaranteed by V leakage testing, not production tested. - - - - - -..2.8.9 Ω na Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 4

TYPICAL CHARACTERISTICS 2 C, unless otherwise noted 6 6 I S = ma I S = ma - On-Resistance (Ω) r ON 4 3 2 =.8 V = 2 V = 3 V = V - On-Resistance (Ω) r ON 4 3 2 = 2 V 8 C 2 C - 4 C = 3 V 8 C 2 C - 4 C = V 8 C 2 C 2 3 4 V - Analog Voltage (V) r ON vs. V and Supply Voltage - 4 C 2 3 4 V - Analog Voltage (V) r ON vs. Analog Voltage and Temperature = V V = V m m = 3 V I+ - Supply Current (na) I+ - Supply Current (A) µ µ µ n n n - 6-4 - 2 2 4 6 8 p K K K M M Temperature ( C) Supply Current vs. Temperature Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency Leakage Current (pa) = V I NO(off) /I NC(off) I (on) Leakage Current (pa) 2 2 - - - = V T = 2 C I (on) I NO(off) /I NC(off) I (off) I (off) - 2. - 6-4 - 2 2 4 6 8 Temperature ( C) Leakage Current vs. Temperature - 2 2 3 4 V, V NO, V NC - Analog Voltage Leakage vs. Analog Voltage

TYPICAL CHARACTERISTICS 2 C, unless otherwise noted ton, toff - Switching Time (ns) 4 4 3 3 2 2 t ON = 2 V t ON = 3 V t OFF = 2 V t OFF = 3 V t ON = V t OFF = V TALK (db) Loss, OIRR, X - - 2-3 - 4 - - 6-7 OIRR LOSS X TALK = V R L = Ω - 8-6 - 4-2 2 4 6 8 3. Temperature ( C) Switching Time vs. Temperature and Supply Voltage - 9 K 3 M M M G Frequency (Hz) Insertion Loss, Off-Isolation Crosstalk vs. Frequency V T - Switching Threshold (V) 2. 2... Q - Charge Injection (pc) 2 - - 2 = 2 V = 3 V = V. 2 3 4 6 7 - Supply Voltage (V) Switching Threshold vs. Supply Voltage - 3 2 3 4 6 V - Analog Voltage (v) Charge Injection vs. Analog Voltage 6

TEST CIRCUITS Switch Input Logic Input NO or NC Switch Output R L 3 Ω V OUT C L 3 pf Logic Input Switch Output V H V L V t ON % t r < ns t f < ns.9 x V OUT t OFF C L (includes fixture and stray capacitance) R V OUT = V L R L + R ON Logic "" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. Figure. Switching Time Logic Input V H t r < ns t f < ns V NO NO V O V L V NC NC R L 3 Ω C L 3 pf V NC = V NO V O 9 % Switch Output V t D t D C L (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V gen + R gen NC or NO V OUT C L = nf V OUT On ΔV OUT Off On V = - Q = ΔV OUT x C L depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection 7

TEST CIRCUITS nf NC or NO V, 2.4 V R L V Off Isolation = 2 log V NO/ NC Analyzer Figure 4. Off-Isolation nf Meter V, 2.4 V NC or NO HP492A Impedance Analyzer or Equivalent f = MHz Figure. Channel Off/On Capacitance maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http:///ppg?7276. 8

Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: 8-Jul-8