V Dual NChannel MOSFET General Description The AO89 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) R DS(ON) (at V GS =.V) % UIS Tested % R g Tested V A < 68mΩ < 9mΩ Top View SOIC8 Bottom View Top View D D S 8 D G 7 D S G 3 6 D D G S G S Pin Absolute Maximum Ratings T A = C unless otherwise noted Parameter Symbol Maximum Units DrainSource Voltage V GateSource Voltage Continuous Drain Current I DM Avalanche Current C Avalanche energy L=.mH C I AS E AS.8 Pulsed Drain Current C Power Dissipation B T A = C T A =7 C T A = C T A =7 C V DS V GS Junction and Storage Temperature Range T J, T STG to C ± I D P D 3..3 V A A mj W Thermal Characteristics Parameter Symbol Typ Max Maximum JunctiontoAmbient A t s 8 6. R θja Maximum JunctiontoAmbient A D SteadyState 7 9 Maximum JunctiontoLead SteadyState 3 R θjl Units C/W C/W C/W Rev : Nov. www.aosmd.com Page of 6
Electrical Characteristics (T J = C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =µa, V GS =V V V DS =V, V GS =V I DSS Zero Gate Voltage Drain Current µa T J = C I GSS GateBody leakage current V DS =V, V GS =±V ± na V GS(th) Gate Threshold Voltage V DS =V GS, I D =µa.7.3.8 V I D(ON) On state drain current V GS =V, V DS =V A R DS(ON) Static DrainSource OnResistance V GS =V, I D =A V GS =.V, I D =3A 6 68 T J = C 6 7 9 mω g FS Forward Transconductance V DS =V, I D =A. S V SD Diode Forward Voltage I S =A,V GS =V.78 V I S Maximum BodyDiode Continuous Current. A DYNAMIC PARAMETERS C iss Input Capacitance pf C oss Output Capacitance V GS =V, V DS =V, f=mhz 3 pf C rss Reverse Transfer Capacitance 3 pf R g Gate resistance V GS =V, V DS =V, f=mhz.7.. Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge 6. nc Q g (.V) Total Gate Charge 3 6 nc V GS =V, V DS =V, I D =A Q gs Gate Source Charge. nc Q gd Gate Drain Charge. nc t D(on) TurnOn DelayTime ns t r TurnOn Rise Time V GS =V, V DS =V, R L =.Ω, ns t D(off) TurnOff DelayTime R GEN =3Ω ns t f TurnOff Fall Time ns t rr Body Diode Reverse Recovery Time I F =A, di/dt=a/µs 6 ns Q rr Body Diode Reverse Recovery Charge I F =A, di/dt=a/µs nc A. The value of R θja is measured with the device mounted on in FR board with oz. Copper, in a still air environment with T A = C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) = C, using s junctiontoambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) = C. Ratings are based on low frequency and duty cycles to keep initialt J = C. D. The R θja is the sum of the thermal impedance from junction to lead R θjl and lead to ambient. E. The static characteristics in Figures to 6 are obtained using <3µs pulses, duty cycle.% max. F. These curves are based on the junctiontoambient thermal impedance which is measured with the device mounted on in FR board with oz. Copper, assuming a maximum junction temperature of T J(MAX) = C. The SOA curve provides a single pulse rating. mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev : Nov. www.aosmd.com Page of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS V 6V V DS =V.V I D (A) 3.V V GS =3.V I D (A) C C 3 V DS (Volts) Fig : OnRegion Characteristics (Note E) 3 V GS (Volts) Figure : Transfer Characteristics (Note E). R DS(ON) (mω) 9 8 7 6 V GS =.V V GS =V Normalized OnResistance.8.6.. V GS =V I D =A V GS =.V I D =3A 7 6 8 I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage (Note E).8 7 7 Temperature ( C) Figure : OnResistance vs. Junction 8Temperature (Note E) R DS(ON) (mω) 8 6 8 6 C C I D =A 6 8 V GS (Volts) Figure : OnResistance vs. GateSource Voltage (Note E) I S (A).E.E.E.E.E.E3.E.E C C....6.8.. V SD (Volts) Figure 6: BodyDiode Characteristics (Note E) Rev : Nov. www.aosmd.com Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 V DS =V I D =A C iss V GS (Volts) 6 Capacitance (pf) 3 C oss C rss 6 8 Q g (nc) Figure 7: GateCharge Characteristics 6 8 V DS (Volts) Figure 8: Capacitance Characteristics. I AR (A) Peak Avalanche Current T A = C T A = C Time in avalanche, t A (µs) Figure : Single Pulse Avalanche capability (Note C) I D (Amps).... R DS(ON) limited T J(Max) = C T A = C.. V DS (Volts) Figure : Maximum Forward Biased Safe Operating Area (Note F) µs µs ms ms s DC T A = C Power (W)... Pulse Width (s) Figure : Single Pulse Power Rating JunctiontoAmbient (Note F) Rev : Nov. www.aosmd.com Page of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Z θja Normalized Transient Thermal Resistance... D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =9 C/W Single Pulse In descending order D=.,.3,.,.,.,., single pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note F) P D T on T Rev : Nov. www.aosmd.com Page of 6
Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig RL Resistive Switching Test Circuit & Waveforms Charge Rg 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = / LI AR AR BV DSS Id Rg Id I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev : Nov. www.aosmd.com Page 6 of 6