FS44A Single N-Channel, Logic-Level, PowerTrench MOSFET Features A, 3 V. Fast switching speed Low gate charge R S(ON) = 3.5 mω @ V GS = V R S(ON) = mω @ V GS = 4.5 V High performance trench technology for extremely low R S(ON) High power and current handling capability General escription Absolute Maximum Ratings T A =5 C unless otherwise noted May 5 This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Symbol Parameter Ratings Units V SS rain Source Voltage 3 V V GSS Gate Source Voltage ± V I rain Current Continuous (Note a) A Pulsed 5 P Power issipation for Single Operation (Note a).5 W (Note b). T J, T STG Operating and Storage Junction Temperature Range 55 to +5 C Thermal Characteristics SO-8 Pin S S S G R θja Thermal Resistance, Junction-to-Ambient (Note a) 5 C/W (Note b) 5 R θjc Thermal Resistance, Junction-to-Case (Note ) 5 5 6 7 8 4 3 FS44A Single N-Channel, Logic-Level, PowerTrench MOSFET Package Marking and Ordering Information evice Marking evice Reel Size Tape width Quantity FS44A FS44A 3" mm 5 units 5 Fairchild Semiconductor Corporation www.fairchildsemi.com FS44A Rev. B
Electrical Characteristics T A = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV SS rain Source Breakdown Voltage V GS = V, I = 5 µa 3 V BVSS T J Breakdown Voltage Temperature Coefficient I = 5 µa, Referenced to 5 C 5 mv/ C I SS Zero Gate Voltage rain Current V S = 4 V, V GS = V µa V S = 4 V, V GS = V, T J = 55 C I GSS Gate Body Leakage V GS = ± V, V S = V ± na On Characteristics (Note ) V GS(th) Gate Threshold Voltage V S = V GS, I = 5 µa.9 3 V VGS(th) T J Gate Threshold Voltage Temperature Coefficient R S(on) Static rain Source On Resistance V GS = V, I = A V GS = 4.5 V, I = 9 A V GS = V, I = A, T J = 5 C I = 5 µa, Referenced to 5 C 5 mv/ C I (on) On State rain Current V GS = V, V S = 5 V 5 A g FS Forward Transconductance V S = 5 V, I = A 48 S ynamic Characteristics C iss Input Capacitance V S = 5 V, V GS = V, f =. MHz 5 pf C oss Output Capacitance 9 pf C rss Reverse Transfer Capacitance 5 pf R G Gate Resistance V GS = 5 mv, f =. MHz.4 Ω Switching Characteristics (Note ) t d(on) Turn On elay Time V S = 5 V, I = A, V GS = V, 9 9 ns t r Turn On Rise Time R GEN = 6 Ω 5 ns t d(off) Turn Off elay Time 8 44 ns t f Turn Off Fall Time 9 9 ns Q g Total Gate Charge V = 5 V, I = A, V GS = 5 V 6 nc Q gs Gate Source Charge 3.4 nc Q gd Gate rain Charge 4. nc rain Source iode Characteristics and Maximum Ratings I S Maximum Continuous rain Source iode Forward Current. A V S rain Source iode Forward Voltage V GS = V, I S =. A (Note ).74. V t rr iode Reverse Recovery Time I F = A, d if /d t = A/µs 4 ns Q rr iode Reverse Recovery Charge 7 nc 9.8. 3.7 3.5 3 mω FS44A Single N-Channel, Logic-Level, PowerTrench MOSFET Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 5 C/W when mounted on a in pad of oz copper b) 5 C/W when mounted on a minimum pad. Scale : on letter size paper. Test: Pulse Width < 3µs, uty Cycle <.% FS44A Rev. B www.fairchildsemi.com
Typical Characteristics I, RAIN CURRENT (A) RS(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE 5 4 3.8.6.4. V GS =V 4.V 6.V 4.5V 3.5.V 3.V.5.5 V S,RAIN-SOURCE VOLTAGE (V).8 Figure. On-Region Characteristics. I =A VGS =V.6-5 -5 5 5 75 5 5 75 T J,JUNCTION TEMPERATURE ( C) R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE R S(ON), ON-RESISTANCE (OHM) 3.5.5 V GS =3.V 3.5V 4.V 4.5V 6.V V.5 3 4 5 I, RAIN CURRENT (A).5.4.3.. Figure. On-Resistance Variation with rain Current and Gate Voltage. T A =5 o C TA =5 o C I =5A 4 6 8 VGS, GATETOSOURCE VOLTAGE (V) FS44A Single N-Channel, Logic-Level, PowerTrench MOSFET Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. I, RAIN CURRENT (A) 5 4 3 V S =5V T A =5 o C -55 o C 5 o C.5.5 3 3.5 4 V GS,GATE TOSOURCE VOLTAGE (V) I S, REVERSE RAIN CURRENT (A).... V GS =V T A = 5 o C 5 o C -55 o C..4.6.8. VS,BOYIOEFORWAR VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with Source Current and Temperature. FS44A Rev. B 3 www.fairchildsemi.com
Typical Characteristics I, RAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) 8 6 4. I =A V S =V V 5V 5 5 5 Qg,GATECHARGE (nc) Figure 7. Gate Charge Characteristics. R S(ON) LIMIT V GS =V R θja =5 o C/W T A =5 o C ms s s C µs ms ms... VS,RAIN-SOURCE VOLTAGE (V) CAPACITANCE (pf) 6 8 4 P(pk), PEAK TRANSIENT POWER (W) 5 4 3 C rss C oss C iss f=mhz V GS =V 5 5 5 3 VS, RAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. R θja =5 C/W T A =5 C... t,time(sec) FS44A Single N-Channel, Logic-Level, PowerTrench MOSFET Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE... =.5...5...... t,time (sec) P(pk) RθJA(t) = r(t) * RθJA RθJA = 5 C/W t t T J - T A = P * RθJA(t) uty Cycle, = t /t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. FS44A Rev. B 4 www.fairchildsemi.com
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