Double Balanced Mixer Die

Similar documents
Monolithic Amplifier Die

Monolithic Amplifier Die

Monolithic Amplifier Die

Fixed Attenuator Die YAT-D-SERIES. The Big Deal Excellent power handling, up to 2W Wideband, DC to 26.5 GHz Usable to 40 GHz

Monolithic Amplifier Die 5 to 22 GHz

REFLECTIONLESS FILTER DICE

REFLECTIONLESS FILTER DICE

Simplified Schematic and Pad description DRAIN GATE SOURCE. Description

Band Pass Filter Die. XBF-D-Series. Reflectionless to 20.5 GHz

Monolithic Amplifier Die

REFLECTIONLESS FILTERS DICE DC to 26 GHz

Monolithic Amplifier Die 5 to 22 GHz

Useful in wideband systems or in in several narrowband systems. Reducing inventory

Useful in wideband systems or in in several narrowband systems. Reducing inventory. Extremely High Reliability improving overall system reliability

Monolithic Amplifier MNA-6W+ High Directivity. 0.5 to 5.5 GHz

Monolithic Amplifier MNA-2A+ High Directivity. 0.5 to 2.5 GHz

Monolithic Amplifier MNA-5A+ High Directivity. 0.5 to 2.5 GHz

Monolithic Amplifier EHA-163L+ Low Current, Wideband, Flat Gain. 50Ω DC to 16 GHz. The Big Deal

Dual Matched MMIC Amplifier

Dual Matched MMIC Amplifier

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX in a single amplifier.

Monolithic Amplifier PHA-13HLN+ Ultra High Dynamic Range. 1MHz to 1 GHz. The Big Deal

Monolithic Amplifier PMA4-33GLN+ Low Noise, High Gain & IP3. 50Ω 0.7 to 3.0 GHz. The Big Deal

Monolithic Amplifier LHA-1H+ Ultra High Dynamic Range to 6 GHz

Monolithic Amplifier CMA-84+ Wideband, High Dynamic Range, Ceramic. DC to 7 GHz. The Big Deal

Monolithic Amplifier CMA-83LN+ Low Noise, Wideband, High IP3. 50Ω 0.5 to 8.0 GHz

Monolithic Amplifier PMA2-33LN+ Ultra Low Noise, High IP3. 50Ω 0.4 to 3.0 GHz. The Big Deal

Monolithic Amplifier PHA-202+ Ultra High Dynamic Range to 2.7 GHz. The Big Deal

Monolithic Amplifier CMA-81+ Wideband, High Dynamic Range, Ceramic. DC to 6 GHz. The Big Deal

Monolithic Amplifier TSY-13LNB+ Wideband. 50Ω 0.03 to 1 GHz. The Big Deal

Digital Controlled Variable Gain Amplifier

Gain Equalizers EQY-SERIES. Microwave. The Big Deal

Monolithic Amplifier CMA-162LN+ Ultra Low Noise, High IP to 1.6 GHz

Monolithic Amplifier CMA-103+ Ultra Linear Low Noise, Ceramic to 4 GHz

Monolithic Amplifier TSS-183A+ Wideband, Microwave, Shutdown. 5 to 18 GHz

SP4T RF Switch HSWA4-63DR+

SPDT RF Switch RF Switch with internal driver Single Supply Voltage, +2.3V to +5.5V

REFLECTIONLESS FILTERS

Digital Controlled Variable Gain Amplifier DVGA1-242APP+

Monolithic Amplifier LEE2-6+ Surface Mount. DC to 7 GHz. The Big Deal

Broad Band: 5 to 300 MHz 5 to 300 MHz bandwidth covers primary CATV applications such as DOCSIS 3.1

No need for external driver, saving PCB space and cost.

SPDT RF Switch MSWA2-50+ Fast Switching - MMIC. The Big Deal

No need for external driver, saving PCB space and cost.

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX

Dual Matched MMIC Amplifier

REFLECTIONLESS FILTERS

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX

REFLECTIONLESS FILTERS

Digital Step Attenuator

Dual Matched MMIC Amplifier

Monolithic Amplifier PHA-13HLN+ Ultra High Dynamic Range. 1MHz to 1 GHz. The Big Deal

No need for gain flatness compensation over 8 GHz band to realize published gain flatness.

Digital Step Attenuator

Digital Controlled Variable Gain Amplifier

SPDT RF Switch JSW2-63VHDRP+

REFLECTIONLESS FILTERS

Digital Step Attenuator

Monolithic Amplifier PHA-13LN+ Ultra High Dynamic Range. 1MHz to 1 GHz. The Big Deal

Digital Step Attenuator

REFLECTIONLESS FILTERS

REFLECTIONLESS FILTERS

Provides users ability to set current consumption over a wide range from 25 to 80 ma.

Flat Gain Amplifier GHz YSF-232+ Mini-Circuits System In Package

14 GHz to 32 GHz, GaAs, MMIC, Double Balanced Mixer HMC292A

REFLECTIONLESS FILTERS

DC-8.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX

Monolithic Amplifier AVA-24A+ Wideband, Microwave. 5 to 20 GHz

REFLECTIONLESS FILTERS

Features. = 25 C, IF = 3 GHz, LO = +16 dbm

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX

Monolithic Amplifier PHA-23HLN+ Ultra High Dynamic Range. 30MHz to 2 GHz. The Big Deal

Monolithic Amplifier PGA Flat Gain, High Dynamic Range to 1.5 GHz. The Big Deal

High Isolation GaAs MMIC Doubler

Passive MMIC 30GHz Equalizer

Digital Step Attenuator

Monolithic Amplifier. DC-6 GHz ERA-2+ Drop-In

Broadband covering primary wireless communications bands: VHF, UHF, Cellular

HMC985A. attenuators - analog - Chip. GaAs MMIC VOLTAGE - VARIABLE ATTENUATOR, GHz. Features. Typical Applications. General Description

Outstanding Noise Figure, measured in a 50 Ohm environment without any external matching

Features. = +25 C, With 0/-5V Control, 50 Ohm System

Features. = +25 C, With 0/-5V Control, 50 Ohm System

Passive MMIC 26-40GHz Bandpass Filter

Features. = +25 C, Vdd = 5V

2 Way-0 Power Splitter/Combiner GP2Y+ Typical Performance Data

2 Way-0 Power Splitter/Combiner GP2S1+ Typical Performance Data

Data Sheet. AMMC GHz Amplifier. Description. Features. Applications

GaAs MMIC Double Balanced Mixer. Description Package Green Status

Ultra Low Noise MMIC Amplifier

GaAs MMIC High Dynamic Range Mixer. Description Package Green Status

Features. Applications. Symbol Parameters/Conditions Units Min. Max.

MAAP Power Amplifier, 15 W GHz Rev. V1. Features. Functional Schematic. Description. Pin Configuration 2. Ordering Information

GHz GaAs MMIC Image Reject Mixer

line of sight links satellite communications Electrical Specifications (T AMB =-55 C to 100 C) FREQUENCY IP3 (MHz) (dbm) Conversion Loss (db)

GaAs MMIC Millimeter Wave Doubler. Description Package Green Status

Operation of Microwave Precision Fixed Attenuator Dice up to 40 GHz

RF Instrument Amplifier

Features. = +25 C, LO Drive = +15 dbm* Parameter Min. Typ. Max. Units Frequency Range, RF & LO 4-8 GHz Frequency Range, IF DC - 3 GHz

Electrical Characteristics (Ambient Temperature T = 25 o C) Units GHz db db db db db dbm dbm VDC VDC ma

Transcription:

Wideband MMIC Double Balanced Mixer Die Level 15 (LO Power 15dBm) 10-40 GHz The Big Deal High L-R Isolation, 37 db typ Useable as Up & Down Converter Product Overview MDB-44H+ is an advanced wideband frequency mixer die fabricated using InGaP HBT technology with integrated LO and RF Baluns. It has repeatable performance making it suitable for volume production. Key Features Double Balanced Feature Advantages Results in excellent LO-RF (30-39 db typical) & LO-IF (27-37 db typical) Isolations minimizing need for external filtering Wide Bandwidth, 10 to 40 GHz Useful in wideband systems or in in several narrowband systems. Reducing inventory Wide IF Bandwidth DC-15 GHz Usable in first and second down converter applications. IF as low as DC enables use in phase detector applications. Unpackaged Die Enables users to integrate it directly into hybrid. Page 1 of 6

Wideband MMIC Double Balanced Mixer Die Level 15 (LO Power 15dBm) 10-40 GHz Product Features Wide bandwidth 10 to 40 GHz High L-R Isolation, 37 db typ. at 25 GHz Useable as Up & Down Converter Typical Applications Satellite up and down converters Defense radar & communication VSAT Line of sight links Federal fixed service 5G ISM +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications Ordering Information: Refer to Last Page General Description MDB-44H+ is an advanced wideband frequency mixer fabricated using InGaP HBT technology with integrated LO and RF Baluns. It has repeatable performance making it suitable for volume production. Simplified Schematic and Pad Description Bonding Pad Position Pad# Function 1,3,4,6,7,9 GROUND 2 IF 5 LO Dimensions in µm, Typical 8 RF L1 L2 L3 L4 L5 L6 H1 H2 H3 H4 H5 Thickness Die Size Bond pad #1 to #9 Size 95.5 358 508 658 1291 1386 113 424.5 574.5 724.5 838 100 1386 x 838 92 x 92 REV. OR M165057 MCL NY 180314 Page 2 of 6

Electrical Specifications 1 at 25 C Parameter Condition (GHz) Min. Typ. Max. Units RF Frequency Range 10 40 GHz LO Frequency Range 10 40 GHz IF Frequency Range DC 15 GHz LO Power +15 dbm Conversion Loss (at IF=30 MHz) 10-20 8.0 db 20-30 8.4 30-40 8.9 LO-RF Isolation 10-20 39 20-30 37 30-40 30 LO-IF Isolation 10-20 33 db 20-30 37 30-40 27 RF-IF Isolation 10-20 24 db 20-30 16 30-40 31 Input at 1dB Compression 10-40 10 dbm Input IP3 10-20 20 dbm Noise Figure 20 8.6 db Thermal Resistance (junction-to-ground lead) 105 C/W 1. Die performance measured in industry standard 3x3mm, 12-lead package. See Characterization Test Circuit, Figure 1. Absolute Maximum Ratings 2 Parameter Ratings Operating Temperature -40 C to 85 C RF Power 21 dbm LO Power 21 dbm IF Current 30 ma 2. Permanent damage may occur if any of these limits are exceeded. Page 3 of 6

Characterization Test Circuit Figure 1A. Block Diagram of Test Circuit used for characterization of Conversion Figure 1B. Block Diagram of Test Circuit used for characterization of Input IP3 Figure 1C. Block Diagram of Test Circuit used for characterization of Noise Figure Figure 1. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Characterization test board TB-973-MDB44HC+). Conversion Loss, Isolations L-R, L-I & R-I, Input IP3 are measured using Agilent PSA E4448A spectrum Analyzer and PSG E8257D Signal Generators. NF is measured using Agilent s N8975A NF Analyzer Conditions (Down Converter): 1. Conversion Loss, Isolations (L-R, L-I & R-I): RF= 0 dbm, LO=+15 dbm, IF=30 MHz 2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dbm/tone at output. 3. Noise Figure: LO=+15 dbm Page 4 of 6

Assembly Diagram Assembly and Handling Procedure 1. Storage Dice should be stored in a dry nitrogen purged desiccators or equivalent. 2. ESD MMIC dice are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static workstation. Devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter ESD damage to dice. 3. Die Attach The Die mounting surface must be clean and flat. Using conductive silver filled epoxy, recommended epoxies are DieMat DM6030HK-PT/H579 or Ablestik 84-1LMISR4. Apply sufficient epoxy to meet required epoxy bond line thickness, epoxy fillet height and epoxy coverage around total Die periphery. Parts shall be cured in a nitrogen filled atmosphere per manufacturer s cure condition. It is recommended to use antistatic Die pick up tools only. 4. Wire Bonding Bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond pads. Thermosonic bonding is used with minimized ultrasonic content. Bond force, time, ultrasonic power and temperature are all critical parameters. Suggested wire is pure gold, 1 mil diameter. Bonds must be made from the bond pads on the Die to the package or substrate. All bond wires should be kept as short as low as reasonable to minimize performance degradation due to undesirable series inductance. Page 5 of 6

Additional Detailed Technical Information additional information is available on our dash board. Data Table Performance Data Swept Graphs S-Parameter (S3P Files) Case Style Die Ordering and packaging information (Note 5) Die Quantity, Package Small, Gel - Pak: 5,10,50,100 KGD* Medium, Partial wafer: KGD*<1330 Large, Full wafer Model No. MDB-44H-DG+ MDB-44H-DP+ MDB-44H-DF+ Available upon request contact sales representative Environmental Ratings Refer to AN-60-067 ENV-80 *Known Good Dice ( KGD ) means that the dice are taken from PCM good wafer and visually inspected in question have been subjected to Mini-Circuits while this is not definitive, it does help to provide a higher degree of confidence that dice are capable of meeting typical RF electrical parameters specified by Mini-Circuits. ESD Rating** Human Body Model (HBM): Class 1A (250V) in accordance with ANSI/ESD STM 5.1-2001 ** Tested in industry standard 3x3 mm, 12-lead MCLP package. Additional Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms ); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/mclstore/terms.jsp D. Mini-Circuits does not warrant the accuracy or completeness of the information, text, graphics and other items contained within this document and same are provided as an accommodation and on an As is basis, with all faults. E. Purchasers of this part are solely responsible for proper storing, handling, assembly and processing of Known Good Dice (including, without limitation, proper ESD preventative measures, Die preparation, Die attach, wire bond ing and related assembly and test activities), and Mini-Circuits assumes no responsibility therefor or for environmental effects on Known Good Dice. F. Mini-Circuits and the Mini-Circuits logo are registered trademarks of Scientific Components Corporation d/b/a Mini- Circuits. All other third-party trademarks are the property of their respective owners. A reference to any third-party trademark does not constitute or imply any endorsement, affiliation, sponsorship, or recommendation by any such third-party of Mini-Circuits or its products. Page 6 of 6