IN THE PAST, various designs have been proposed in the

48 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 47, NO. 1, JANUARY 1999 A Novel Waveguide-to-Microstrip Transition for Millimeter-Wave Module Applications Frank J. Villegas, Member, IEEE, D. Ian Stones, Senior Member, IEEE, and H. Alfred Hung Senior Member, IEEE Abstract A novel waveguide-to-microstrip transition is developed using a new design methodology based on iris coupling. Key features of the design are a single-layer substrate, new matching topology, and new cavity enclosure. The transition lends itself to a low-cost implementation, while maintaining the enclosure s hermetic integrity. An extensive tolerance study shows that the present design is robust and very stable with respect to manufacturing and assembly variations. Careful consideration has been given to the mechanical aspects of the transition s implementation in order to achieve seamless integration into the overall package manufacturing and assembly process without sacrificing electrical performance. Proof of concept was achieved by implementing a Q-band (f 0 = 44:5 GHz) design on alumina, a W -band (f 0 =94 GHz) design on z-cut quartz, and a W -band design on fused silica. All exhibited better than 22-dB return loss at their center frequencies with less than 0.3-dB insertion loss, and at minimum a 10% 15-dB return-loss bandwidth. Index Terms Microwave integrated circuits, MMIC s, waveguide discontinuities, waveguide transitions. I. INTRODUCTION IN THE PAST, various designs have been proposed in the literature in an effort to introduce an efficient transition from waveguide (w/g) to microstrip. The continued decline in the overall cost of monolithic-microwave integrated-circuit (MMIC)-populated modular assemblies, such as amplifiers and transceivers in military and commercial systems, continues to drive the search for more affordable and package-integrable transitions, especially for millimeter-wave (mmw) applications. In order to keep the overall package cost to a minimum, it is necessary to design a w/g transition that is mechanically simple and easily integrated into the housing, while maintaining an acceptable level of electrical performance. For military applications, the integrity of the hermetic seal around the w/g transition is also of prime concern since, in many cases, the overall module needs be impermeable to moisture, exhibiting a minimal-gas-leak rate. The transition proposed herein is a lowcost alternative, which is readily incorporated into an existing hermetic module manufacturing process. Further, results will show that the transition s electrical performance is robust with respect to mechanical variations which may arise during the fabrication process. Manuscript received March 25, 1998; revised August 13, 1998. This work was supported by DARPA/ARL under the MAFET Phase II Program. F. J. Villegas is with WaveBand, Torrance, CA 90501 USA. D. I. Stones is with TRW ES&TD, Redondo Beach, CA 90278 USA. H. A. Hung is with GTS, Wall Township, NJ 07719 USA. Publisher Item Identifier S 0018-9480(99)00384-1. Fig. 1. Illustration of the w/g-to-microstrip transition. In the past, w/g transitions based on stepped-ridged w/g [1], [2], antipodal finlines [3], and probe coupling [4], [5] have been reported in the literature. While these w/g transitions all provide broad-band ( 10% 20% for less than 15-dB return loss) performance with usually less than 0.7-dB insertion loss, the majority of them suffer due to their degrees of mechanical complexity. Some of these w/g transitions can be rather large, comprised of several independent pieces that must be assembled in various steps. They may also require multilevel conductors and substrates, tight-tolerance machining of housing components such as w/g steps/tapers, or precise positioning of a w/g backshort. These requirements render some of the designs expensive and difficult to integrate into the package, thus driving the total manufacturing and assembly cost up. In addition, the designs may require a separate w/g window to achieve hermetic sealing of the component. Fig. 1 illustrates the proposed w/g transition design described in this paper, which, as we have mentioned, alleviates some of these issues, while still maintaining a respectable level of electrical performance. Optimal coupling of RF power to and from the w/g occurs by way of an -plane rectangular iris etched from the ground plane of the microstrip substrate, as shown in Fig. 1. Impedance matching is accomplished using microstrip 0018 9480/99$10.00 1999 IEEE

VILLEGAS et al.: NOVEL W/G-TO-MICROSTRIP TRANSITION FOR MMW MODULE APPLICATIONS 49 (a) (b) Fig. 2. (a) Top view of w/g transition showing matching network. (b) Side view showing w/g and cavity. circuitry, rendering a very low-profile design, and the printed substrate is eutectically soldered to the housing floor for a hermetic seal. As shown in Fig. 1, a cavity encloses the w/g transition, with the exception of the opening for the microstrip. The mmw housing, which consists of a ring frame and base plate, contains the cavity perimeter. The housing is assembled along with the input/output probe substrates in one step. The cavity cover is an integral part of the housing cover and can be laser welded in place, thus making the w/g transition a fully integrated part of the housing requiring no special assembly steps. The combination of the rectangular iris and the cavity enclosure turns out to be one of the more distinguishable features of the present design. It ensures that the w/g transition s electrical behavior maintains a comfortable level of independence from inherent mechanical tolerances that could otherwise have a detrimental effect on its performance. These features render a very low-cost highperformance design, which is readily integrable into typical MMIC multichip assembly (MCA) packages. II. WAVEGUIDE TRANSITION DESIGN The current w/g transition design, shown in Fig. 2, is based on the concept of a microstrip line coupled to the w/g energy via a slot or iris in the ground plane of the substrate [6]. The microstrip line, situated along the -plane of the guide, is terminated by a short-circuited radial stub coincident with one edge of the iris and connects to the main microstrip line at the other. The stub ensures a zero voltage condition at the iris edge over a relatively wide range of frequencies and, in turn, maximum RF coupling to the radiating line. The dimensions of the cavity enclosure are selected such that, where is the center operating frequency of the w/g transition, and the (determined by considering a canonical rectangular cavity homogeneously filled with an average effective permittivity) are the two closest cavity modal resonances bounding. This choice is obviously made so that, within the frequency band of interest, no cavity resonances have the opportunity to be excited. These resonances can alter the characteristics and/or efficiency of the coupling of w/g energy to the microstrip line, thus affecting its performance. Discontinuities in the phase of the transmitted fields can cause irrecoverable errors in the information-carrying signal. As we alluded to earlier, because of the relative isolation of the cavity from the w/g due to the iris (provided no cavity resonances are present), the exact height of the cavity cover is not crucial to the electrical performance of the w/g transition, as has been the case in other previously reported designs. Studies of the present design have shown that variations in cavity height of up to 15% of the total height have no adverse affect on the w/g transition performance. This is verified in the following section. The iris dimensions should be carefully chosen, as this determines the upper bound for the bandwidth of the w/g transition. Essentially, the iris is modeled by a shunt equivalent circuit whose elements model the storage of susceptive energy caused by nonpropagating higher order modes excited at the discontinuity [9]. Essentially, these modes ensure that the tangential electric and magnetic fields meet the boundary conditions in the iris air region and on the surrounding conductive surface. These shunt elements can be determined using a variational method, such as that described in [7]. It should also be noted that, due to the discontinuity introduced by the iris, some backscattering of the incident field can occur in the w/g, although this can be minimized by proper choice of iris dimensions. In some designs, the iris resonances themselves can be used to broaden the bandwidth of the w/g transition [8]. In the present case, the choice of iris dimensions is accomplished using a three-dimensional (3-D) electromagnetic simulator such as Ansoft s Maxwell Eminence or HP s HFSS. Fig. 3 illustrates a parametric plot of the input impedance calculated at the near edge of the iris. It is shown on the Smith Chart as a family of curves as a function of, where and is the height and width of the iris, respectively. As shown in the figure, choosing the curve with the least variation in the impedance is equivalent to choosing the iris dimensions that will yield the broadest bandwidth for the matched w/g transition. As evident in the example shown in the figure, the broadest bandwidth is obtained by choosing the largest height for the iris, i.e., mil. Matching the impedance presented by the iris to the microstrip port is accomplished by using two symmetrical shunt short-circuited lines. Again, radial stubs are used to aid in achieving as broad-band a response as possible. The lines begin a short distance away from the iris edge, as shown in Fig. 2(a), such that at point the conductance is equal

50 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 47, NO. 1, JANUARY 1999 Fig. 3. Smith Chart illustrating the technique employed to determine optimal iris dimensions. Each trace corresponds to the input impedance of the iris as a function of width for a given height. The H =30mil curve exhibits the least variation with iris width and, hence, indicates an overall broader bandwidth. to the characteristic admittance of the main microstrip line. The lengths are then chosen such that each shunt line contributes half of the necessary susceptance to the main microstrip in order to conjugate match the input. Using two symmetrical lines in parallel, as opposed to one, helps widen the frequency bandwidth. This is partially due to the higher series reactance seen by the microstrip line. It also tends to yield a more balanced design. Fine tuning of the response with respect to is possible by varying accordingly. III. RESULTS Several w/g transitions were designed, fabricated, and tested based on the aforementioned methodology. A -band ( GHz) design on 5-mil alumina, a -band ( GHz) design on 5-mil z-cut quartz, and a -band design on 5-mil fused silica were implemented and tested. Preliminary results of the alumina and z-cut quartz transitions have already been presented in [10]. In this paper, the z-cut quartz design has been updated, showing a significant improvement in performance. Additionally, we provide an extensive tolerance study of the alumina transition, illustrating various fabrication issues that may arise and the robust nature of the current design. The models were analyzed using commercial 3-D FEM simulators, employing relatively strict convergence criteria. Verification of the designs through -parameter measurements were facilitated by employing two w/g transitions placed in a back-to-back arrangement, as shown in Fig. 4, for one of the examples, namely, the -band z-cut quartz w/g transition. Similar fixtures were used for the verification of the other designs. The w/g transitions are connected using a 50- microstrip of sufficient length to avoid any interaction between the two w/g transitions during measurement. It is 955 mil 9.3 long for the -band Fig. 4. Top-view photo of z-cut quartz W -band test fixture sans cover. Note that two w/g transitions are back-to-back. The Q-band fixture is similar. fixture, 830 mil 12.7 for the -band z-cut quartz fixture, and 460 mil 6.5 for the -band fused silica fixture. A. -Band w/g Transition on Alumina Fig. 5 shows the theoretical results for the -band w/g transition design. Note that dielectric and planar conductor losses are accounted for in the model simulation, using a conductivity of 3.8e07 S/m and a dielectric loss tangent of 3e-04. Using a 15-dB return-loss reference, a bandwidth greater than 11% is predicted. The insertion loss throughout the band of interest is 0.35 db. Fig. 6 shows the -band measured -parameter data obtained on an automated network analyzer (ANA). The measured results corresponding to one w/g transition can be determined from the back-to-back data. By accounting for the microstrip line and test fixture losses based on separate measurements (1.8 db/in and 0.2 db, respectively, at 44 GHz), the return and insertion losses of one

VILLEGAS et al.: NOVEL W/G-TO-MICROSTRIP TRANSITION FOR MMW MODULE APPLICATIONS 51 Fig. 5. Theoretical results of Q-band w/g transition. Conductor/dielectric losses are modeled using a conductivity of 3.8e07 S/m and a loss tangent of 3.0e-4. (a) Fig. 6. Measured data of back-to-back Q-band w/g transitions. w/g transition are calculated. A 10% bandwidth is deduced for a 15-dB return loss, and the insertion loss per w/g transition is found less than 0.3 db. This figure is slightly better than that predicted by the numerical model, but we have used a conservative estimate of the conductivity in order to account for variations inherent in the actual material. At the center frequency, GHz, a return loss better than 22 db has been obtained. 1) -Band Tolerance Study: We assembled another - band test fixture having a cavity whose height was 15 mil smaller, with measured results showing no significant performance degradation. Theoretical verification of this was accomplished by performing a parametric study in which the height of the cavity cover was allowed to vary 13.5 mil (15% of the total cavity height). Fig. 7 shows the results of the two calculations. As depicted in the figure, the perturbed models indicate the frequency response is relatively invariant with respect to variations in this particular dimension. As (b) Fig. 7. Simulation of Q-band w/g transition with cavity cover (backshort) (a) reduced by 15% and (b) increased by 15%. shown in Fig. 7(a), where the cavity height has decreased by 13.5 mil, a slight increase in insertion loss (approximately from 0.35 to 0.5 db) occurs, accompanied by a small shift in the center frequency (approximately from 44.75 to 45.2 GHz). Nevertheless, the qualitative characteristics of the response (i.e., the dual return-loss resonances) remain reasonably unhampered. In Fig. 7(b), the results are shown for the model with the cavity height increased by 13.5 mil. Again, the insertion loss has increased to 0.5 db, and the center frequency has shifted from 44.75 to 44.5 GHz. These slight shifts in center frequency indicate that changes in the cavity cover height only introduce second-order perturbations in the iris admittance. We should note that other design methodologies, such as an -plane probe with a w/g backshort, would tolerate no more than a 5% 6% variation in backshort position without adversely affecting the response. These results thus show that the present design is relatively robust with respect to mechanical tolerances in the height of the package cover. Further studies of the effects of mechanical tolerances on w/g transition performance are shown in Fig. 8. Fig. 8(a)

52 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 47, NO. 1, JANUARY 1999 (a) (b) (c) Fig. 8. Simulation of Q-band w/g transition with (a) iris and planar conductors shifted laterally 3 mil. (b) Same as (a), with cavity height 5 mil larger. (c) Same as (b), with cavity offset longitudinally 2 mil. shows the effect of a 3-mil lateral shift in the position of the iris and planar conductors with respect to the axis of the w/g. This situation could conceivably arise in the assembly process when attachment of the substrate onto the base plate of the housing does not result in exact alignment of the substrate (iris) with the w/g openings. As evident in the figure, the response becomes slightly skewed, although in-band, the return loss remains at or greater than 15 db. Also, the insertion loss in band has once again slightly increased from 0.35 to 0.5 db. Fig. 8(b) shows the result of the lateral iris/conductor shift along with a 5-mil increase in cavity height. The insertion loss is again 0.5 db, but the increase in the height of the cavity has actually aided in restoring the return-loss response characteristics to that of the nominal case, at least in a qualitative sense. This result illustrates an important point: the possibility exists that a superposition of mechanical tolerances will have less of a negative effect on the electrical performance of the w/g transition than that of a single tolerance alone. This is, in fact, one reason why determining the cause of poor measured performance can sometimes be a tedious, if not difficult, problem. Fig. 8(c) depicts a similar case whereby the iris and metallization have laterally shifted, with the additional problem of a longitudinal shift in the cavity position with respect to the w/g opening. This case models the possibility of a shift in the ring frame and package cover with respect to the base plate and substrate. The results show the same typical behavior of the w/g transition, with a slight increase in insertion loss and skewing of the response. Overall, the present design shows a respectable level of robustness with respect to tolerances in fabrication and assembly, following a trend which seems to indicate a slight acceptable increase in transmission loss with the return loss remaining below a 15-dB threshold. It is also noteworthy that the tolerances seem to have little or no effect on the bandwidth of the device. The w/g transitions have been incorporated in the design of a -band MMIC power amplifier module, with an alloy-48 ring frame for the housing sidewalls, and aluminum silicon carbide (AlSiC) base. This power module, as shown in Fig. 9, has yielded an output power of 2.8 W at 44 GHz. Rigorous thermal

VILLEGAS et al.: NOVEL W/G-TO-MICROSTRIP TRANSITION FOR MMW MODULE APPLICATIONS 53 Fig. 9. Photo of Q-band power module illustrating a typical MMIC application of the w/g transition. Fig. 11. Measured data of back-to-back z-cut quartz W -band w/g transitions. Fig. 10. Theoretical results of W -band w/g transition on z-cut quartz substrate. Note that conductor/dielectric losses are accounted for in the simulated model. testing (over 100 temperature cycles from 40 C to 125 C) has proven the hermetic integrity of the module, including the areas surrounding the w/g transitions. These tests ensure that no differential strains will be induced in the material used to join the base of the housing to the ring frame because of common thermal changes endured by the device throughout its life-span. More than 100 of these modules are currently in production. B. -Band w/g Transition on Z-Cut Quartz Fig. 10 shows the theoretical results for the -band z-cut quartz design using A40 as the base material, including a microstrip line conductivity of 3.75e07 S/m, and a dielectric loss tangent of 2.0e 4. For a 15-dB return-loss band definition, an insertion loss better than 0.3 db is predicted, along with a 12.8% bandwidth. Fig. 11 shows the -band z-cut quartz back-to-back measured data. A 12% bandwidth with better than 15-dB return loss is observed. The insertion loss is found Fig. 12. Theoretical results of W -band w/g transition on fused silica substrate. Note that conductor/dielectric losses have been accounted for in the simulated model. to be less than 0.2 db per w/g transition, using a combined value of 1.61 db for the microstrip line and test fixture losses at 94 GHz. The slight differences between the simulated and measured data for the w/g transition is attributed to mechanical tolerances in the fabrication process. C. -Band w/g Transition on Fused Silica Thermal testing has shown that mmw housings employing AlSiC as the base material require a different substrate material than z-cut quartz for a proper coefficient of thermal expansion (CTE) match. A new -band w/g transition design using fused silica has been developed in response to this requirement, following the same design procedure outlined in Section II. The results of the new design are shown in Fig. 12, using a microstrip-line conductivity of 3.75e07 S/m and a dielectric loss tangent of 1.5e-4. Note that a 15-dB return-loss bandwidth better than 11% is achieved, with a corresponding insertion loss of 0.2 db throughout the band of interest. We should also note the dual resonances evident

54 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 47, NO. 1, JANUARY 1999 and assembly variations. In general, a small and acceptable increase in insertion loss was encountered, with the 15-dB return-loss bandwidth remaining relatively constant. All of the w/g transitions presented exhibit less than 0.3-dB insertion loss, greater than 20-dB return loss at their center frequencies, and a 15-dB return-loss bandwidth of at least 10%. The aforementioned features provide a w/g transition that can be readily implemented in MMIC-based MCA packages and, as such, has many uses in both military and commercial mmw applications. Fig. 13. Measured results of W -band w/g transition on fused silica substrate. in the return loss at 92 and 95 GHz, implying an optimal choice of iris dimensions and RF coupling of the iris fields to the microstrip line. The lower permittivity and loss tangent of this particular substrate material is partly responsible for the broad-band response and low insertion loss of the w/g transition. The measured data of two identical w/g transitions separated by an electrically short length of a 50- microstrip is shown in Fig. 13. The measured return loss at 94 GHz is 26.9 db, with a corresponding 1-dB insertion loss. The 15-dB bandwidth is 8%. Both the increase in loss and decrease in bandwidth in comparison with the simulated data are attributable to the test fixture. As originally fabricated, the fixture exhibited a resonance within the operating band. Consequently, it became necessary to use a section of absorbing material ( m) placed within the microstrip channel (see Fig. 4) as a means of suppressing the resonance, which resulted in the increased transmission loss of the overall fixture. This was verified independently by including the absorbing material in an HFSS simulation of the test fixture (the results are currently omitted). A recent implementation of the -band module with a narrower w/g channel design has eliminated the in-band modal resonance, which has in turn led to a wider frequency response and lower insertion loss. Multistage MMIC power modules assembled using this particular housing design have demonstrated an output power in excess of 500 mw at 94 GHz. ACKNOWLEDGMENT The authors would like to express their gratitude to K. Park, TRW ES&TD, Redondo Beach, CA, for his invaluable assistance on all mechanical issues and J. Lester, TRW ES&TD, for his extensive work on the -band module. REFERENCES [1] S. S. Moochalla and C. An, Ridge waveguide used in microstrip transition, Microwaves RF, Mar. 1984. [2] W. Menzel and A. Klaassen, On the transition from ridged waveguide to microstrip, in Proc. 19th European Microwave Conf., 1989, pp. 1265 1269. [3] L. J. Lavedan, Design of waveguide-to-microstrip transitions specially suited to millimeter-wave applications, Electron. Lett., vol. 13, no. 20, pp. 604 605, Sept. 1977. [4] T. Q. Ho and Y. Shih, Spectral-domain analysis of E-plane waveguide to microstrip transitions, IEEE Trans. Microwave Theory Tech., vol. 37, pp. 388 392, Feb. 1989. [5] D. I. Stones, Analysis of a novel microstrip-to-waveguide transition/combiner, in IEEE MTT-S Int. Symp. Dig., vol. 1, San Diego, CA, 1994, pp. 217 220. [6] B. N. Das, K. V. S. V. R. Prasad, and S. Rao, Excitation of waveguide by stripline- and microstrip-line-fed slots, IEEE Trans. Microwave Theory Tech., vol. MTT-34, pp. 321 327, Mar. 1986. [7] R. E. Collin, Field Theory of Guided Waves. New York: McGraw-Hill, 1960, ch. 8. [8] L. Hyvonen and A. Hujanen, A compact MMIC-compatible microstrip to waveguide transition, in IEEE MTT-S Int. Symp. Dig., vol. 2, San Francisco, CA, 1996, pp. 875 878. [9] N. Marcuvitz, Waveguide Handbook. New York: McGraw-Hill, 1951, ch. 5. [10] F. J. Villegas, D. I. Stones, and H. A. Hung, A novel waveguide-tomicrostrip transition for low-cost millimeter-wave and MMIC applications, in IEEE MTT-S Int. Symp. Dig., vol. 2, Denver, CO, 1997, pp. 739 742. IV. CONCLUSION A novel w/g-to-microstrip w/g transition has been demonstrated through its design and implementation in the 44 and 94 GHz bands using several different dielectric materials: alumina, z-cut quartz, and fused silica. These materials are indicative of current popular choices in substrate technology for MMIC MCA designs. The salient features of the current design are its low fabrication and assembly costs, hermetic sealing of the interface, simple low-profile electrical/mechanical design, and relatively broad-band performance with low insertion loss. An extensive tolerance study was undertaken on the -band w/g transition design, showing conclusively that the present design is robust and stable with respect to typical fabrication Frank J. Villegas (S 92-M 95) was born in Habana, Cuba, in December 1964. He received the B.S.E.E. and M.S.E.E. degrees from the University of Houston, Houston, TX, in 1993 and 1995, respectively, and is currently working toward the Ph.D. degree in electrical engineering at the University of California at Los Angeles. From 1993 to 1995, he was a Research Assistant in the Department of Electrical and Computer Engineering, University of Houston. From 1995 to 1998, he was with TRW ES&TD, Redondo Beach, CA, engaged in the design of passive microwave, mmw, and MMIC components. He is currently with WaveBand, Torrance, CA, working on the research and development of antenna systems for military and commercial applications. His interests include the design of passive microwave and mmw components, MMIC design, traveling-wave and microstrip antennas, leakage phenomena in planar circuits, and periodic structures.

VILLEGAS et al.: NOVEL W/G-TO-MICROSTRIP TRANSITION FOR MMW MODULE APPLICATIONS 55 D. Ian Stones (M 72 SM 86) was born in Scunthorpe, U.K., in 1940. He received the B.Eng. degree from Sheffield University, Sheffield, U.K., in 1962, and the M.S.E.E. degree from California State University at Long Beach, in 1976. He has also completed post-graduate study at the University of Southern California. From 1968 to 1971, he was with Anzac Electronics, Waltham, MA. From 1964 to 1968, he was with Ether Engineering Ltd., Bushey, U.K.. From 1962 to 1964, he was with G.&E. Bradley Ltd., Neasden, U.K. From 1971 to 1973, he was with Wavecom, Inc., Northridge, CA, where he designed filters and couplers. Since 1973, he has been with TRW, Redondo Beach, CA. He is currently a Technical Specialist and has been responsible for the development of passive linear components in the microwave and mmw frequency bands. In particular, he has designed coaxial and waveguide wideband high-power radial combiners suitable for high-order amplifier combining. He has also developed phase shifters, couplers, filters, and rotary transformers. He is currently involved in the development of low-loss transitions and spatial combiners. He has presented and published several papers and holds two patents. H. Alfred Hung (S 76 M 75 SM 81) received the S.B. degree in electrical engineering from the Massachusetts Institute of Technology, Cambridge, in 1968, and the M.S. and Ph.D. degrees from Cornell University, Ithaca, NY, in 1970, and 1974, respectively. He has held various functional and program management positions at COMSAT Laboratories, Raytheon, and TRW. He is currently with GTS, Wall Township, NJ. He is also an Adjunct Professor with George Washington University, where, since 1978, he has been professionally affiliated. He has worked in the areas of satellite communications and radar systems, microwave/mmw devices, MMIC s and packaging technologies, and optical/microwave techniques, for various commercial and military applications. He has authored or co-authored over 85 publications in journals, book chapters, and conference proceedings, including several invited presentations at international conferences. Dr. Hung is active in IEEE technical committees and reviews.

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