Maintenance/ Discontinued

Similar documents
Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Discontinued AN W 2 (18 V, 8 Ω) Power Amplifier with Mute Function and Volume Control

AN7511, AN7511S. 1-W BTL audio power amplifier. ICs for Audio Common Use. Overview. Features. Applications. Block Diagram AN7511

Maintenance/ Discontinued

Maintenance/ Discontinued

DATA SHEET. Part No. AN17821A

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

LNJ757W86RA. High Bright Surface Mounting Chip LED. ESS Type. Absolute Maximum Ratings T a = 25 C. Lighting Color

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

DATA SHEET. Part No. AN44075A

AN7561Z. BTL output power IC for car audio. ICs for Audio Common Use. Overview. Features. Applications

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

FK Silicon N-channel MOS FET. For switching circuits. Overview. Package. Features. Marking Symbol: CV. Packaging

DATA SHEET AN5832SA. Part No. SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

I F = I R = 100 ma, I rr = 0.1 I R, Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

DMG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm. For general amplification.

DMG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits DMG26401 in SMini6 type package

AN W 2 (18 V, 8 Ω) Power Amplifier with Mute Function and Volume Control. ICs for Audio Common Use. Overview. Features.

Maintenance/ Discontinued

XN04312 (XN4312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Composite Transistors. For switching/digital circuits

DB L DB L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 2. For rectification. Internal Connection

BAS16 Silicon epitaxial planar type

TA8227P TA8227P. Low Frequency Power Amplifier. Features TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Overview LA42351 is 5W 1-channel AF power amplifier with DC volume control intended for televisions. Volume

DMG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification DMG20401 in SMini6 type package

Maintenance/ Discontinued

MTM232232LBF Silicon N-channel MOSFET

DMC904F0. Silicon NPN epitaxial planar type. For high frequency amplification. Features. Marking Symbol: D3. Basic Part Number.

Parameter Symbol Conditions Min Typ Max Unit Forward voltage V F I F = 10 ma V V

DMG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm. For general amplification.

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8258H

UNA0216 (UN216) Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Small Signal Transistor Arrays

MTM761110LBF MTM761110LBF. Silicon P-channel MOSFET. for Switching. Internal Connection. Pin name

DME20B01. Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification. Features. Marking Symbol: A3

DA3J101F0L DA3J101F0L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 3

DA2J10100L DA2J10100L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 3. For high speed switching circuits. Internal Connection

MTM232270LBF Silicon N-channel MOSFET

DSA7101. Silicon PNP epitaxial planar type. For low frequency amplification Complementary to DSC7101. Features. Marking Symbol: 4C.

LA Overview. Monolithic Linear IC 5W 2-Channel AF Power Amplifier With DC Volume Control

FCAB22370L1 Gate resistor installed Dual N-channel MOS FET

DB2J50100L DB2J50100L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 2. For high speed switching circuits. Internal Connection

DB L DB L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 2. For rectification. Internal Connection

AN W 2 (18 V, 8 Ω) Power Amplifier with Mute Function and Volume Control. ICs for Audio Common Use. Overview. Features.

1-ch motor driver IC

DB2W31800L DB2W31800L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 4. For rectification. Internal Connection

Built-in SIF demodulator circuit eliminates need for adjustment. U.S TV sound multiplex demodulation IC AN5832FJM

Maintenance/ Discontinued

DA6X102S0R Silicon epitaxial planar type

BAS16 Silicon epitaxial planar type

Transcription:

ICs for TV AN723 3-W BTL audio power amplifier Overview The AN723 is an audio power amplifier IC of -ch. output. In the BTL (balanced transformerless) method, fewer external parts and easier design for applications are required. Features 3-W output (8 Ω) with supply voltage of 8 V On-chip standby function On-chip volume function Applications Televisions and audio equipment Package HSIP9-P-E Block Diagram 2 Output 3 GND (for output) 4 Output Standby 6 Input 7 includes following four Product lifecycle stage. GND 8 N.C. 9 Volume Publication date: June 26 SDB8AEB

Pin Descriptions Pin No. Supply voltage 2 Ch. + output Absolute Maximum Ratings Parameter Symbol Rating Unit Supply voltage *2 4 V Supply current I CC. A Power dissipation * 3 P D.22 W Operating ambient temperature * T opr 2 to +7 C Storage temperature * T stg to + C Note) *: Except for the operating ambient temperature and storage temperature, all ratings are for T a = 2 C. *2: At no signal. Description 3 Ground (output ch.) 4 Ch. output Standby (standby state if this pin is open.) 6 Ch. input 7 Ground 8 N.C. 9 Volume (max. volume if this pin is open.) Note) Please do not apply voltage or current to the N.C. pin from outside. *3: The power dissipation shown is the value for T a = 7 C. Recommended Operating Range Parameter Symbol Range Unit Supply voltage 3. to 3. V includes following four Product lifecycle stage. 2 SDB8AEB

Electrical Characteristics at = 8. V,, f = khz, T a = 2 C ± 2 C Parameter Symbol Conditions Min Typ Max Unit Quiescent circuit current I CQ V IN = mv, Vol. = V 2 6 ma Standby current I STB V IN = mv, Vol. = V µa Output noise voltage * V NO R g = kω, Vol. = V..4 mv[rms] Voltage gain G V P O =. W, Vol. =.2 V 3 33 3 db Total harmonic distortion THD P O =. W, Vol. =.2 V.. % Maximum output power P O THD = %, Vol. =.2 V 2.4 3. W Ripple rejection ratio * RR R g = kω, Vol. = V, 3 db V R =. V[rms], f R = 2 Hz Output offset voltage V OFF R g = kω, Vol. = V 2 2 mv Volume attenuation rate * Att P O =. W, Vol. = V 7 8 db Intermediate voltage gain G VM P O =. W, Vol. =.6 V 2. 23. 26. db Standby pin current I STB2 V IN = mv, V STB = 3 V 2 µa Volume pin current I VOL V IN = mv, Vol. = V 2 µa Note) *: In measuring, the filter for the range of Hz to 3 khz (2 db/oct) is used. Terminal Equivalent Circuits Pin No. Pin name Equivalent circuit Voltage. V 2 Ch. + output pin V 2. V CC /2 8 Ω 2 kω 2 Ω Ω 2 includes following four Product lifecycle stage. 3 GND V 3 SDB8AEB 3

Terminal Equivalent Circuits (continued) Pin No. Pin name Equivalent circuit Voltage 4 Ch. output pin 2. V /2 8 Ω 2 kω 2 Ω Ω 4 Standby pin V 3 kω To the shock sound prevention circuit V RF kω ( ) 2 Ω 2 kω kω 2 kω /2 33 kω kω kω To the constant current circuit 6 Ch. input pin V mv to mv REF (.4 V) 6 µa kω µa 3 kω µa includes following four Product lifecycle stage. kω kω Ω 7 GND V 7 8 N.C. Open 4 SDB8AEB

Terminal Equivalent Circuits (continued) Pin No. Pin name Equivalent circuit Voltage 9 Volume pin µa Application Circuit Example 47 µf 2 3 8 Ω Out 4 kω 9 2 kω µf 68 kω Standby 6 27 kω. µf kω V IN 7 8 9 Volume includes following four Product lifecycle stage. SDB8AEB

Usage Notes Please avoid the short-circuits to, ground, or load short-circuit. Please connect the cooling fin with the GND potential. The thermal shutdown circuit operates at about T j = C. However, the thermal shutdown circuit is reset automatically if the temperature drops. Please carefully design the heat radiation especially when you take out high power at high. Please connect only the ground of signal source with the signal GND of the amplifier in the previous stage. Technical Data P D T a curve of HSIP9-P-E Power dissipation P D (mw) 2 8 6 4 2 8 6 4 2 P D T a Independent IC without a heat sink Rthj-a = 6. C/W PD = 88 mw (2 C) 2 7 2 Ambient temperature T a ( C) includes following four Product lifecycle stage. 6 SDB8AEB

Technical Data (continued) Main characteristics Output power P O (W) Output power P O (W) Voltage gain G V (db).. 8 7 6 4 3 2 f = khz THD = %, 6 Ω 4 Hz HPF Both ch. input Rg = kω Vol. =.2 V 8 Ω 6 Ω 2 4 6 8 2 4 THD ( khz) P O Supply voltage (V) Both ch. input f = khz R g = kω V STB = V 4 Hz HPF Vol. =.2 V. 3 34 33 32 3 3 29 28 27 26 P O P O, THD V IN THD ( khz) THD ( khz) Input voltage V IN (mv[rms]) G V, P O f P O GV 4 Hz HPF.. Total harmonic distortion THD (%) Output power P O (W) Quiescent circuit current I CQ (ma) Power consumption P C (W) 4 4 9. 3 8. 3 7. I CQ 6. 2. 2 4. Both ch. input 3. I STB R g = kω V STB = V/ V Vol. = V 2... 2 4 6 8 2 4 2..8.6.4.2..8.6.4.2 Supply voltage (V) I CC (8 Ω) I CQ, I STB P C, I CC P O P C (8 Ω) Both ch. input f = khz Rg = kω, 6 Ω 4 Hz HPF Vol. =.2 V Both ch. input Rg = kω Vol. =.2 V. 4. 4. 3. 3. 2. 2.... Total harmonic distortion THD (%)..... 2. 3. 4... Output power (-ch) P O (W) THD f Both ch. input PO =. W Rg = kω 4 Hz HPF Vol. =.2 V includes following four Product lifecycle stage. THD..9.8.7.6..4.3.2. Standby current I STB (µa) Supply current I CC (A) 2.. Frequency f (Hz) Frequency f (Hz) SDB8AEB 7

Technical Data (continued) Main characteristics (continued) G V, THD RR 3. 8 Voltage gain G V (db) Ripple rejection ratio RR (db) Ripple rejection ratio RR (db) 34 33 32 3 3 29 28 27 26 THD 2 2 4 6 8 2 4. 8 7 6 4 3 2 8 7 6 4 3 2 RR V RIPPLE RR Vol. G V Supply voltage (V) RR (vol.-max.) f = khz 4 Hz HPF Both ch. input Rg = kω Vol. =.2 V RR V STB = V Vol. = V/.2 V V RIPPLE =. V[rms] R g = kω f RIPPLE = 2 Hz.9.8.7.6..4.3.2. Power supply ripple voltage V RIPPLE (mv[rms]) RR R g = kω V STB = V V RIPPLE =. V[rms] f RIPPLE = 2 Hz Total harmonic distortion THD (%) Ripple rejection ratio RR (db) Ripple rejection ratio RR (db) 7 6 4 RR (vol.-max.) 3 2 Rg = kω Vol. = V/.2 V VRIPPLE =. V[rms] fripple = 2 Hz 2 4 6 8 2 4 8 7 6 4 3 2 8 7 6 4 3 2 RR f RIPPLE V IN RR Supply voltage (V) RR Vol. = V/.2 V V RIPPLE =. V[rms] R g = kω f RIPPLE = 2 Hz V STB = V RR (vol.-max.) Output noise voltage V NO (µv[rms]) Power supply ripple frequency f RIPPLE (Hz) V NO (vol.-max.) VNO (FLAT) V NO Rg = kω DIN audio filter Vol. = V/.2 V includes following four Product lifecycle stage...2.4.6.8..2.4 Volume voltage Vol. (V) 2 4 6 8 2 4 Supply voltage (V) 8 SDB8AEB

Technical Data (continued) Main characteristics (continued) V NO R g V NO Vol. Output noise voltage V NO (µv[rms]) Quiescent circuit current I CQ (ma) Volume attenuation Att (db) 8 7 6 4 3 2 V NO (FLAT) 8 7 6 4 3 2 9 8 V NO I CQ V STB Att V IN DIN audio filter Vol. = V/.2 V V NO (vol.-max.) Input impedance R g (Ω) I CQ.... 2. 2. 3. Standby voltage V STB (V) Att R g = kω Vol. = V 7 f = khz 6 4 Hz HPF R g = kω V STB = V Vol. = V 4 Input voltage V IN (mv[rms]) Output noise voltage V NO (µv[rms]) Volume attenuation Att (db) 2 8 6 4 2 9 8 7 VNO (FLAT) Volume voltage Vol. (V) Att Att f Rg = kω DIN audio filter V STB = V V NO.2.4.6.8.2.4 P O =. W f = khz 6 4 Hz HPF R g = kω V STB = V Vol. = V 4 2 4 6 8 2 4 Volume attenuation Att (db) 9 9 8 8 7 7 6 6 Att Supply voltage (V) includes following four Product lifecycle stage. Att Frequency f (Hz) PO =. W Rg = kω Vol. = V SDB8AEB 9

Technical Data (continued) Main characteristics (continued) Att Vol. THD Vol. Volume attenuation Att (db) 2 3 4 Att PO 6 f = khz 7 4 Hz HPF 8 Rg = kω 9..2.4.6.8..2.4 Volume voltage Vol. (V) Example of PCB pattern GND 2 3 4 6 7 8 9 Ch. out+ Ch. out Total harmonic distortion THD (%).. PO =. W f = khz THD..2.4.6.8..2.4 Volume voltage Vol. (V) 4 Hz HPF R g = kω GND (input) Mute/Volume V IN (ch.) Standby includes following four Product lifecycle stage. SDB8AEB

Request for your special attention and precautions in using the technical information and semiconductors described in this book () If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. () When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. includes following four Product lifecycle stage.