DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES Compact package High forward transfer admittance yfs = 1200 µs TYP. (VDS = 5 V, ID = 0 µa) Low capacitance Ciss = 4.5 pf (VDS = 5 V, VGS = 0 V, f = 1 MHz) Includes diode and high resistance at G - S ORDERING INFORMATION PART NUMBER 2SK660 PACKAGE SST ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage Note VDSX 20 V Gate to Drain Voltage VGDO 20 V Drain Current ID 10 ma Gate Current IG 10 ma Total Power Dissipation PT 100 mw Junction Temperature Tj 125 C Storage Temperature Tstg 55 to +125 C EQUIVALENT CIRCUIT Drain Gate Source Note VGS = V Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D10753EJ2V0DS00 (2nd edition) Date Published January 2002 NS CP(K) Printed in Japan 2002
ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Cut-off Current IDSS VDS = 5.0 V, VGS = 0 V 60 500 µa Gate Cut-off Voltage VGS(off) VDS = 5.0 V, ID = µa V Forward Transfer Admittance yfs1 VDS = 5.0 V, ID = 30 µa, f = khz 150 µs Forward Transfer Admittance yfs2 VDS = 5.0 V, VGS = 0 V, f = khz 150 1200 µs Input Capacitance Ciss VDS = 5.0 V 4.5 6.0 pf Output Capacitance Coss VGS = 0 V 1.5 3.0 pf Reverse Transfer Capacitance Crss f = MHz 1.2 3.0 pf Noise Voltage NV See Test Circuit 3.0 µv NOISE VOLTAGE TEST CIRCUIT +4.5 V R = 1 kω JIS A NV (r.m.s) C = 10 pf 2 Data Sheet D10753EJ2V0DS
TYPICAL CHARACTERISTICS (TA = 25 C) 120 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 500 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE PT - Total Power Dissipation - mw 100 80 60 40 20 ID - Drain Current - µ A 400 300 200 100 0.15 V 0.10 V 0.05 V VGS = 0 V 0.05 V 0.10 V 0.15 V 0.25 V 0.20 V 0.30 V 0 0 30 60 90 120 150 180 TA - Ambient Temperature - C 0 0 2 4 6 8 VDS - Drain to Source Voltage - V 10 GATE TO SOURCE CURRENT vs. GATE TO SOURCE VOLTAGE 40 30 VDS = 5 V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE IG - Gate Current - µ A 0.8 0.6 0.4 0.2 10 20 30 20 10 0 0.2 0.4 0.6 0.8 ID - Drain Current - ma 0.8 0.6 0.4 0.2 40 0.4 0.2 0 0.2 0.4 VGS - Gate to Source Voltage - V VGS - Gate to Source Voltage - V yfs - Forward Transfer Admittance - ms 3.0 2.5 2.0 1.5 0.5 FORWARD TRANSFER ADMITTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V VDS = 5 V 0 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 CiSS, COSS - Capacitance - pf 10 8 5 3 2 INPUT AND FEEDBACK CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE CISS COSS VDS = 0 V f = khz 1 1 2 5 10 20 50 100 VDS - Drain to Source Voltage - V Data Sheet D10753EJ2V0DS 3
VGS (off) - Gate to Source Cut-off Voltage - V yfs - Forward Transfer Admittance - ms FORWARD TRANSFER ADMITTANCE AND GATE TO SOURCE CUT-OFF VOLTAGE vs. ZERO- GATE VOLTAGE DRAIN CURRENT CO-RELATION 10.0 5.0 2.0 0.5 0.2 0.1 0.05 0.02 0.01 10 yfs VGS (off) VDS = 5 V 20 50 100 200 500 1000 Zero-Gate Voltage Drain Current - µ A 4 Data Sheet D10753EJ2V0DS
PACKAGE DRAWING (Unit: mm) 4.0±0.2 2.0±0.2 3.0±0.2 0.50 TYP. 0.45 TYP. 0.42 TYP. 1.27 TYP. 1.35 TYP. 12.5 MIN. TYP. 0.6 TYP. D G S 1.27 TYP. Data Sheet D10753EJ2V0DS 5
[MEMO] 6 Data Sheet D10753EJ2V0DS
[MEMO] Data Sheet D10753EJ2V0DS 7
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