Heterogeneous Integration of Silicon and AlGaInAs for a Silicon Evanescent Laser

Invited Paper Heterogeneous Integration of Silicon and AlGaInAs for a Silicon Evanescent Laser Alexander W. Fang a, Hyundai Park a, Richard Jones b, Oded Cohen c, Mario J. Paniccia b, and John E. Bowers a a University of California Santa Barbara, ECE Department, Santa Barbara, CA 9316, USA b Intel Corporation, 22 Mission College Blvd, SC-12-326, Santa Clara, CA 9554, USA c Intel Corporation, SBI Park Har Hotzvim, Jerusalem, 9131, Israel (Invited Paper) ABSTRACT We report a novel laser architecture, the silicon evanescent laser (SEL), that utilizes a silicon waveguide and offset AlGaInAs quantum wells. The silicon waveguide is fabricated on a Silicon-On-Insulator (SOI) wafer using a CMOScompatible process, and is bonded with the AlGaInAs quantum well structure using low temperature O 2 plasma-assisted wafer bonding. The optical mode in the SEL is predominantly confined in the passive silicon waveguide and evanescently couples into the III-V active region providing optical gain. This approach combines the advantages of high gain III-V materials and the integration capability of silicon technology. Moreover, the difficulty of coupling an external laser source is overcome as the hybrid waveguide can be self-aligned to silicon-based passive optical devices. The SEL lases continuous wave (CW) at 1568 nm with a threshold of 23 mw. The maximum single-sided fiber-coupled CW output power is 4.5 mw. The SEL characteristics are dependent on the silicon waveguide dimensions resulting in different confinement factors in the III-V gain region. Keywords: Silicon Photonics, Heterogeneous Integration, Quantum Well Lasers 1. INTRODUCTION Silicon is transparent at the communication wavelengths of 1.3 and 1.5 um, which together with its maturity in the integrated electronics industry make it attractive as a material platform for the integration of photonic and electronic systems. The realization of a complete silicon photonics platform has been limited by the difficulty in creating an electrically pumped laser source on silicon. The major impediment for creating laser sources on silicon is its inefficient light generation due to its indirect bandgap. This problem has been addressed in the form of a Raman Laser [1,2] and LEDs [3] with engineered band structures aimed at increasing light emission. In this paper, we report on an approach that utilizes offset AlGaInAs quantum wells bonded to silicon rib waveguides fabricated on a Silicon-On-Insulator (SOI) wafer. The optical mode is defined by the silicon rib waveguide region while leaving the offset quantum well region homogeneous across the wafer. The mode lies predominantly in the silicon region with an evanescent tail overlapping into the offset quantum well region. This approach allows for the mode characteristics and on chip routing to be controlled by the silicon processing while achieving self alignment of the light generated in the offset quantum well region to optical mode in the silicon rib waveguide. We recently reported a pulsed SEL operating at 2 C [4, 5]. We report here a continuous wave SEL operating at a maximum temperature of 6 C. At 2 C, the devices lase with a threshold of 23mW and maximum fiber-coupled output of 4.5 mw. 2. DEVICE STRUCTURE AND DESIGN The device structure is shown in Fig. 1. The device is divided into two regions: the silicon-on-insulator (SOI) passivewaveguide structure and the III-V active region that provides the optical gain. The SOI structure consists of a Si substrate, a 1 µm thick SiO 2 lower cladding layer, and a Si rib waveguide with a height (H) and rib-etch depth (D) of.7 µm and.6 µm respectively. The waveguide width (W) is varied from 1 µm to 5 µm. The III-V region consists of a two-period InP/1.1 µm InGaAsP superlattice (SL), a 11 nm thick InP spacer, a 5 nm thick unstrained 1.3 µm InAlGaAs separated confinement heterostructure (SCH) layer, strain-compensated AlGaInAs quantum wells, a 5 nmthick unstrained 1.3 µm AlGaInAs SCH layer, and an InP upper cladding layer. The SL region employs 7.5 nm thick Novel In-Plane Semiconductor Lasers V, edited by Carmen Mermelstein, David P. Bour, Proc. of SPIE Vol. 6133, 6133W, (26) 277-786X/6/$15 doi: 1.1117/12.66735 Proc. of SPIE Vol. 6133 6133W-1

alternating layers of InP/InGaAsP to inhibit the propagation of defects from the bonded interface to the QW region [6]. Five 7 nm thick InAlGaAs quantum wells with compressive strain (.85 %) and 1 nm-thick AlGaInAs barriers with tensile strain (-.55 %) are used. The barrier layers have a bandgap corresponding to a wavelength of 1.3 µm. 1.3Q-AIGaInAs absorber AlGalnAs MQW(5 wells) 1.3Q-AIGalnAs absorber np Spacer lnp/algainas SL Si rib waveguide Si2 Fig. 1. Device structure cross section Fig. 2 shows the qualitative effect of rib waveguide height (H) on the shape of the optical mode with a width (W) of 1.5 µm and rib-etch depth of (H.1µm). These mode profiles were simulated using the Beamprop mode solver. In general, when H is small most of the optical mode is in the III-V region as shown in the left side of Fig 2. As H becomes larger the optical mode becomes more confined to the silicon waveguide as shown in the right side of Fig 2. The behavior for the waveguide width follows the same trend where thinner widths yield more optical mode in the III-V region and wider widths yield more optical mode in the silicon region. Fig. 2. Calculated mode profiles for waveguide heights of.7 µm, 1. µm, and 1.3 µm The effects of H and W can be quantified with the confinement factor in the silicon region (Γ Si ) and the QW gain region (Γ QW ). Γ QW is a critical design parameter in order to achieve gain greater than the total losses. The confinement factors in the QW gain and silicon waveguide regions can be obtained from the calculated modes. Fig. 3a. shows the effect of rib waveguide W and H on Γ QW and Γ Si. It can be seen that Γ Si and Γ QW begin to saturate for W larger than 2.5 µm. Fig. 3b shows Γ Si and Γ QW for the the fabricated device dimensions H and D of.7 µm and.6 µm respectively. Γ Si is varied Proc. of SPIE Vol. 6133 6133W-2

from 5 % to 41 % with waveguide width variation of 1 µm to 5 µm and correspondingly the Γ QW are varied from 5.1 % to 4.1 % for five quantum wells. U- C E C C.9.8.7.6.5.4.3.2.1 I 2 4 Rib Waveguide Width (gm) 5 (a).45- I I.52.4-.5.35 Silicon Region 3-.48 LI.25-.46 C.2- LOIS-.1-.5 ;QWRegion. - I I I I 1 2 3 4 5 Rib Waveguide Width (pm) (b) Fig 3. Confinement factor calculations versus waveguide width (W) a).6µm,.8 µm, 1. µm, and 1.2 µm waveguide height (H) b).7 µm waveguide height (H). 4. FABRICATION The silicon rib waveguide is fabricated on (1) surface of a lightly p-doped (doping concentration <2x1 15 cm -3 ) silicon-on-insulator (SOI) substrate by standard photolithography and reactive ion etching (RIE) plasma of Cl 2 /HBr/Ar. A thin layer of SiO 2 was used as a hard mask. The SOI wafer and III-V epitaxial wafer are treated by buffered HF and NH 4 OH respectively after a thorough cleaning procedure using acetone, isopropanol, and deionized water. The two samples are bonded together via oxygen plasma assisted bonding [7]. After a low temperature anneal (~3 ºC), the InP.44 2.4 Proc. of SPIE Vol. 6133 6133W-3

substrate is removed with HCl. The devices are diced, the facets are polished, and the devices are characterized. Finally the facets are coated with a broadband dielectric HR coating (~8 %) consisting of three periods of SiO 2 /Ta 2 O 5 and characterized again. The final device length after dicing and polishing is 8 µm. An image of an 8x8 mm 2 bonded sample after InP substrate removal is shown in Fig. 4a. The bonded layer is continuous across the entire sample and is robust enough to stand up to dicing and polishing of the facets. Fig. 4b shows a scanning electron microscope (SEM) image of the fabricated device cross section. The particles on the facet surface are due to the polishing process - - I - 5pm (a) (b) Fig. 4. a) AlGaInAs/Si SOI sample after InP substrate removal b) SEM image of fabricated device The thermal expansion coefficient mismatch between Si (2.6 x 1-6 K -1 ) and InP (4.8 x 1-6 K -1 ) can introduce cracks for temperatures above 3 ºC for Si and InP substrate thicknesses of 5 µm and 35 µm respectively. Low temperature oxide mediated bonding was utilized to avoid these surface non-uniformities typically seen in direct wafer bonding conducted at 6 ºC. The oxygen plasma treatment generates a thin oxide layer (<5 nm) whose surface is very smooth and highly chemically reactive [7]. As a result, this bonding process creates a thin oxide layer at the bonded interface; this does not significantly alter the optical mode because it is so thin and optically transparent. 5. EXPERIMENT AND RESULTS Fig. 5 shows the experimental set up. The device is optically pumped perpendicular to the laser by a 125 nm fiber laser. The light from the pump laser is focused by a cylindrical lens illuminating a 12 µm by 916 µm rectangular spot incident on the device through the top InP cladding layer. The pump power reaching the device was scaled by the length of the device and the computed mode widths of 9.36 µm, 4.98 µm, 4.38 µm, 4.48µm, 5.18 µm and 5.18 µm for waveguide widths of 1 µm, 1.5 µm, 2.5 µm, 3 µm, 4 µm, and 5 µm respectively. An experimentally measured power reflectivity of 4% at 125 nm was also accounted for in the scaling. The laser output is collected with a multimode fiber from the waveguide and subsequently characterized using a spectrum analyzer or photodetector. The fiber coupling efficiency is experimentally measured to be -5dB. The TE/TM near-field images of the output mode are recorded on an IR camera through a polarizing beam splitter and an 8x lens at the opposite waveguide facet. Proc. of SPIE Vol. 6133 6133W-4

125 nm Pump Laser Spectrum Analyzer or Power Meter Cylindrical Lens Multimode Fiber Fig 5. Experimental setup Polarizing Beamsplitter -c Microscope Objective TM light CCD Fig. 6 and 7 shows the laser output power as a function of pump power and temperature for two different waveguide widths of 4 µm and 1 µm. In Fig. 6, a 4 µm wide device is operating with a threshold pump power of 23 mw with a fiber-coupled maximum output power of 4.5 mw and a slope efficiency of 3 % at 2 ºC. The total maximum output power taking into account the light from both facets and the coupling losses of -5 db is approximately 28 mw and the corresponding slope efficiency is 16 %. The threshold increases from 23 to 15 mw between 2 C and 6 C and the structure exhibits a temperature coefficient (T ) of 27 K. The kinks in the LL curves are due to the multimode lasing with wide waveguide dimension. It is clearly shown from two different mode profiles in Fig. 6 that higher modes are superimposed with a fundamental mode at the region II of the LL curve while only a fundamental mode is lasing at the region I. Fig. 7 shows LL curves of a 1 µm wide device with a threshold of 12 mw and a slope efficiency of.5 % at 2 ºC. Since this waveguide width is narrower, the fundamental mode is lasing without other higher order modes up to.6 mw. This device demonstrates a maximum fiber-coupled output power of.9 mw. The total maximum output power including the output from both facets and coupling losses is approximately of 5 mw with a slope efficiency of 2.8 %. a) E a. -tj2 a,. a). IL I I I I I I 2 4 6 8 1 12 14 16 18 2 Pump Power (mw) Fig. 6. LL curves and mode profiles for 8 µm long, 4 µm wide device (inset) threshold vs. temperature Proc. of SPIE Vol. 6133 6133W-5

E.8 ci) a.o.6 a. 4 a)?.2 ci). IL 1 2 3 4 5 Pump Power (mw) Fig. 7. LL curves and mode profile for 8 µm long, 1 µm wide device In Fig. 8, the threshold pump power dependence on waveguide width is shown for different temperatures. The wider stripe lasers have lower threshold pump power than narrower devices because of low scattering losses and low propagation loss in the silicon waveguide. Threshold Pump Power (mw). )) lu P.).D )) FHHH H H H4 -.. F4 -H HI 1 QDDQ o o Fig. 8. Threshold pump power with different waveguide widths for 8 µm length Fig. 9 shows the lasing spectrum of a 4 µm wide device with several pump powers all operating at 25 ºC. The optical spectrum consists of the expected Fabry-Pérot response for the 8 µm long cavity, with a group index of 3.68. The calculated group index from simulations is 3.77. Proc. of SPIE Vol. 6133 6133W-6

J 2dB P= 1.3P P= 1.2Pth 153 154 155 156 157 158 159 16 Wavelength (nm) Fig. 9. Lasing spectra of a 4 µm wide and 8 µm length device Overall device yield and threshold variation are shown in Fig. 1. Sixty devices (ten devices at each of six widths) were characterized. 47 of the sixty devices are lasing with a variation of threshold power for each waveguide width of less than ±9 %. The yield of the four wider widths is 98%, but the yield is lower for the narrower stripe widths due to damage during polishing. 18 I I I I I 16 A. 14O I CW@25 C 4 12 1 8 1 V 1o 6O 4 1 I- $ 2 C') *.5 1. 1.5 2. 2.5 3. 3.5 4. 4.5 5. 5.5 Width (jtm) Fig. 1. Device yield and threshold variation for 8 µm length device. The number at each width represents the number of lasing devices out of 1. Proc. of SPIE Vol. 6133 6133W-7

The internal efficiency and modal loss were measured experimentally to be ~3% and ~2 cm -1 by fabricating a second set of devices with lengths of 7 µm. The modal loss measurement was confirmed by taking Hakki-Paoli measurements in the long wavelength limit. The 7 µm HR coated devices had a maximum output power of 2.7 mw at 2 C and operated up to 6 C for wider devices. They showed similar high yield, low device-to-device variation, and threshold vs. waveguide width behavior to that of the 8 µm. Uncoated devices lase CW up to 35 C. At 2 C, the maximum power coupled into a single mode fiber is 11 mw. 6. CONCLUSION An optically pumped silicon evanescent laser has been demonstrated operating continuous wave at 1568nm up to 6 ºC. It has a maximum fiber-coupled output power of 4.5 mw with a threshold pump power of 23 mw. The laser utilizes low temperature oxide mediated bonding of offset AlGaInAs quantum wells to a silicon rib waveguide to achieve optical gain. The process provides high yield and low device to device performance variation. This structure can be extended to electrically pumped devices, such as lasers, amplifiers and modulators, through the doping of III-V layers and minor backside processing. 7. REFERENCES 1. H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, A continuous-wave Raman silicon laser, Nature, 433, 725-728, (25). 2. O. Boyraz and B. Jalali, Demonstration of a silicon Raman laser, Opt. Express 12-21, 5269-5273, (24) 3. W. L. Ng, M. A. Lourenco, R. M. Gwilliam, S. Ledaim, G. Shao, K. P. Homewood, An efficient roomtemperature silicon-based light-emitting diode, Nature 41, 192-194, (21) 4. A. W. Fang, H. Park, S. Kodama, J. E. Bowers, "An optically pumped silicon evanescent laser," Proceedings for ECOC 25, Post Deadline, 25. 5. H. Park, A. W. Fang, S. Kodama, and J. E. Bowers, "Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells," Opt. Express, 13-23, 946-9464, (25) 6. A. Karim, K. A. Black, P. Abraham, D. Lofgreen, Y. J. Chiu, J. Piprek, J. E. Bowers, Super lattice barrier 1528- nm vertical-cavity laser with 85 ºC continuous-wave operation, IEEE Photon. Technol. Lett., 12, 1438-144, (2) 7. D. Pasquariello K. Hjort, Plasma-Assisted InP-to-Si Low Temperature Wafer Bonding, IEEE J. Sel. Topics Quantum Electron. 8, 118-131, (22) Proc. of SPIE Vol. 6133 6133W-8