Pch -3V -4A Power MOSFET Datasheet Outline V DSS -3V TSST8 R DS(on) (Max.) 45mW I D -4A P D.25W () (2) (8) (7) (6) (3) (4) (5) Features ) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8). 4) Pb-free lead plating ; RoHS compliant Inner circuit () Drain (2) Drain (3) Drain (4) Gate (5) Source (6) Drain (7) Drain (8) Drain * ESD PROTECTION DIODE *2 BODY DIODE Packaging specifications Packaging Taping Application Reel size (mm) 8 DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3, Taping code Marking TR UG Absolute maximum ratings(t a = 25 C) Parameter Symbol Value Unit Drain - Source voltage V DSS -3 V Continuous drain current I D * drain current I D,pulse *2 4 6 A A Gate - Source voltage V GSS 2 V Power dissipation P D *3 P D *4.25 W.55 W Junction temperature T j 5 C Range of storage temperature T stg -55 to +5 C / 22.9 - Rev.B
Thermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - ambient R thja *3 R thja *4 - - C/W - - 227 C/W Electrical characteristics(t a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V (BR)DSS V GS = V, I D = -ma -3 - - V Breakdown voltage temperature coefficient ΔV (BR)DSS ΔT j I D = -ma referenced to 25 C - -25 - mv/ C Zero gate voltage drain current I DSS V DS = -3V, V GS = V - - - ma Gate - Source leakage current I GSS V GS = 2V, V DS = V - - ma Gate threshold voltage V GS (th) V DS = -V, I D = -ma - - -2.5 V Gate threshold voltage temperature coefficient ΔV (GS)th ΔT j I D = -ma referenced to 25 C - 3.9 - mv/ C V GS = -V, I D = -4A - 32 45 Static drain - source on - state resistance R DS(on) V GS = -4.5V, I D = -2A - 45 63 V GS = -4.V, I D = -2A - 52 72 mw V GS = -V, I D = -4A, T j =25 C - 47 66 Gate input resistannce R G f = MHz, open drain - 3 - W Transconductance g fs V DS = -V, I D = -4A 2.7 7. - S * Limited only by maximum temperature allowed. *2 Pw ms, Duty cycle % *3 Mounted on a ceramic board (3 3.8mm) *4 Mounted on a FR4 (2 2.8mm) 2/ 22.9 - Rev.B
Electrical characteristics(t a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Input capacitance C iss V GS = V - - Output capacitance C oss V DS = -V - 5 - pf Reverse transfer capacitance C rss f = MHz - 3 - Turn - on delay time t d(on) Rise time t r Turn - off delay time t d(off) Fall time t f V DD -5V, V GS = -V - 5 - I D = -2A - 3 - R L = 7.5W - 85 - R G = W - 45 - ns Gate Charge characteristics(t a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Total gate charge Q g V DD -5V, I D = -9A V GS = -5V V DD -5V, I D = -4A V GS = -V -.5 - - 2 - nc Gate - Source charge Q gs Gate - Drain charge Q gd V DD -5V, I D = -4A V GS = -5V - 3. - - 3.3 - Body diode electrical characteristics (Source-Drain)(T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Inverse diode continuous, forward current I S * T a = 25 C - - - A Forward voltage V SD V GS = V, I s = -4A - - -.2 V 3/ 22.9 - Rev.B
Electrical characteristic curves Fig. Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Power Dissipation : P D /P D max. [%] 2 8 6 4 2 5 5 2 P W = ms Operation in this area is limited by R DS (on) (V GS = -V) P W = ms P W = ms DC Operation. Single Pulse Mounted on a ceramic board. (3mm 3mm.8mm).. Junction Temperature : Tj [ C] Drain - Source Voltage : -V DS [V] Normalized Transient Thermal Resistance : r (t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width. Single Pulse top D = D =.5 D =. D =.5 D =. bottom Single. Rth(ch-a)=ºC/W Rth(ch-a)(t)=r(t) Rth(ch-a) Mounted on ceramic board (3mm 3mm.8mm)... Peak Transient Power : P(W) Fig.4 Single Pulse Maxmum Power dissipation Single Pulse.. Pulse Width : P W [s] Pulse Width : P W [s] 4/ 22.9 - Rev.B
Electrical characteristic curves Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) 4 3 2 V GS = -V V GS = -4.5V V GS = -4.V V GS = -2.8V V GS = -2.5V 4 3 2 V GS = -V V GS = -4.5V V GS = -4.V V GS = -3.V V GS = -2.8V V GS = -2.5V.2.4.6.8 2 4 6 8 Drain - Source Voltage : -V DS [V] Drain - Source Voltage : -V DS [V] Fig.7 Breakdown Voltage vs. Junction Temperature Fig.8 Typical Transfer Characteristics Drain - Source Breakdown Voltage : -V (BR)DSS [V] 6 4 2 V GS = V I D = -ma -5 5 5 Junction Temperature : T j [ C]... V DS = -V T a = 25ºC T a = 75ºC T a = 25ºC T a = -25ºC 2 3 4 Gate - Source Voltage : -V GS [V] 5/ 22.9 - Rev.B
Electrical characteristic curves Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig. Transconductance vs. Drain Current Gate Threshold Voltage : -V GS(th) [V] 3 2 V DS = -V I D = -ma -5 5 5 Transconductance : g fs [S] V DS = -V T a = -25ºC T a =75ºC T a =25ºC... Junction Temperature : T j [ C] Fig. Drain CurrentDerating Curve Fig.2 Static Drain - Source On - State Resistance vs. Gate Source Voltage Drain Current Dissipation : I D /I D max. (%).2.8.6.4.2-25 25 5 75 25 5 Static Drain - Source On-State Resistance : R DS(on) [mw] 5 5 I D = -2.A I D = -4.A 5 5 Junction Temperature : T j [ºC] Gate - Source Voltage : -V GS [V] 6/ 22.9 - Rev.B
Electrical characteristic curves Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.3 Static Drain - Source On - State Resistance vs. Drain Current(I) V GS = -4.V V GS = -4.5V V GS = -V. Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.4 Static Drain - Source On - State Resistance vs. Junction Temperature 5 4 3 2 V GS = -V I D = -2.A -5-25 25 5 75 25 5 Junction Temperature : T j [ºC] Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.5 Static Drain - Source On - State Resistance vs. Drain Current(II) V GS = -V T a =25ºC T a =75ºC T a = -25ºC. Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(III) V GS = -4.5V T a =25ºC T a =75ºC T a = -25ºC. 7/ 22.9 - Rev.B
Electrical characteristic curves Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.7 Static Drain - Source On - State Resistance vs. Drain Current(IV) V GS = -4.V T a =25ºC T a =75ºC T a = -25ºC. Capacitance : C [pf] Fig.8 Typical Capacitance vs. Drain - Source Voltage T a = 25ºC f = MHz V GS = V C rss C oss C iss.. Drain - Source Voltage : -V DS [V] Fig.9 Switching Characteristics Fig.2 Dynamic Input Characteristics Switching Time : t [ns] t d(on) t d(off) t f t r V DD = -5V V GS = -V R G =W Gate - Source Voltage : -V GS [V] 8 6 4 2 V DD = -5V I D = -4.A R G =W.. 5 5 Total Gate Charge : Q g [nc] 8/ 22.9 - Rev.B
Electrical characteristic curves Fig.2 Source Current vs. Source Drain Voltage V GS =V Source Current : -I S [A]. T a =25ºC T a =75ºC T a = -25ºC..5.5 Source-Drain Voltage : -V SD [V] 9/ 22.9 - Rev.B
Measurement circuits Fig.- Switching Time Measurement Circuit Fig.-2 Switching Waveforms Fig.2- Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform / 22.9 - Rev.B
Dimensions (Unit : mm) TSST8 D L A c Lp E HE e b x L S A Lp A S e l l2 y S A b3 e Patterm of terminal position areas DIM MILIMETERS INCHES MIN MAX MIN MAX A.75.85.3.33 A..5.2 b.22.42.9.7 c.2.22.5.9 D 2.9 3..4.22 E.5.7.59.67 e.65.3 HE.8 2..7.79 L.5.25.2. L.5.25.2. Lp.5.34.6.3 Lp.5.34.6.3 x -. -.4 y -. -.4 DIM MILIMETERS INCHES MIN MAX MIN MAX e.46.6 b3 -.52 -.2 l -.44 -.7 l2 -.44 -.7 Dimension in mm/inches / 22.9 - Rev.B
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