High Efficiency LED, Ø 5 mm Tinted Diffused Package

Similar documents
High Efficiency LED in Ø 3 mm Tinted Total Diffused Package

High Efficiency LED in Ø 3 mm Tinted Diffused Package

High Efficiency LED in Ø 3 mm Clear Package

High Efficiency LED in Ø 3 mm Tinted Non-Diffused Package

High Efficiency LED in Ø 3 mm Tinted Diffused Package

Low Current LED in Ø 5 mm Tinted Diffused Package

High Intensity LED in Ø 3 mm Tinted Non-Diffused Package

Low Current LED in Ø 3 mm Tinted Diffused Package

High Efficiency LED, Ø 5 mm Untinted Non-Diffused Package

Universal LED in Ø 3 mm Tinted Diffused Package

High Efficiency Blue LED, Ø 5 mm Untinted Non-Diffused Package

Universal LED in Ø 5 mm Tinted Diffused Package

Resistor LED for 12 V Supply Voltage

High Intensity LED, Ø 5 mm Untinted Non-Diffused Package

High Intensity LED in Ø 3 mm Tinted Diffused Package

TLPR5600, TLPH5600, TLPY5600, TLPG5600, TLPP5600 Sideview LED, Ø 5 mm Tinted Diffused Package

High Efficiency Blue LED in Ø 3 mm Tinted Diffused Package

Resistor LED for 12 V Supply Voltage

Backlighting LED in Ø 3 mm Tinted Non-Diffused Package

High Intensity LED, Ø 5 mm Clear Package

Low Current LED in Ø 5 mm Tinted Diffused Package

TLRG4420CU, TLRH4420CU, TLRO4420CU, TLRY4420CU Resistor LED for 12 V Supply Voltage

High Intensity Red Low Current 7-Segment Display

Bicolor Symbol LED in 2.5 mm x 5 mm Untinted Top-Diffused Package

High Intensity Red Low Current 7-Segment Display

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Infrared Emitting Diode, 950 nm, GaAs

High Intensity LED, Ø 5 mm Untinted Non-Diffused

Silicon NPN Phototransistor

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

Ultrabright White LED, Ø 3 mm

Silicon NPN Phototransistor

Silicon NPN Phototransistor

Silicon NPN Phototransistor

Silicon PIN Photodiode

Infrared Emitting Diode, 950 nm, GaAs

Silicon PIN Photodiode

Ultrabright LED, Ø 5 mm Untinted Non-Diffused Package

Silicon PIN Photodiode, RoHS Compliant

High Intensity Red Low Current Seven Segment Display

High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Silicon PIN Photodiode, RoHS Compliant

Small Signal Zener Diodes

Silicon PIN Photodiode

Silicon Phototransistor in 0805 Package

Zener Diodes FEATURES

Silicon PIN Photodiode

High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

Small Signal Fast Switching Diode

Silicon Photodiode, RoHS Compliant

High Brightness LED, Ø 5 mm Untinted Non-Diffused Package

Transmissive Optical Sensor with Phototransistor Output

High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

Silicon PIN Photodiode

Single Phase Rectifier Bridge, 1.9 A

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Infrared Emitting Diode, 950 nm, GaAs

Infrared Emitting Diode, 950 nm, GaAs

High Intensity Red Low Current 7-Segment Display

Silicon NPN Phototransistor, RoHS Compliant

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

Standard 7-Segment SMD Display 10 mm

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Infrared Emitting Diode, 950 nm, GaAs

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Standard 7-Segment Display 7 mm

Single Phase Rectifier Bridge, 1.2 A

Transmissive Optical Sensor with Phototransistor Output

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Reflective Optical Sensor with Transistor Output

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

Reflective Optical Sensor with Transistor Output

Matched Pairs of Emitters and Detectors

High Power Infrared Emitting Diode, 890 nm, GaAlAs / Double Hetero

High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

Subminiature Transmissive Optical Sensor with Transistor Output

Infrared Emitting Diode, 875 nm, GaAlAs

Ambient Light Sensor

Silicon NPN Phototransistor

Low Current 10 mm 7-Segment Display

Silicon PIN Photodiode

Infrared Emitting Diode, 875 nm, GaAlAs

Zener Diodes FEATURES

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

Low Current 0603 SMD LED

Silicon NPN Phototransistor

Small Signal Fast Switching Diode FEATURES

Infrared Emitting Diode, 950 nm, GaAs

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

Ambient Light Sensor

Transmissive Optical Sensor with Phototransistor Output

Linear Optocoupler for Optical DAA in Telecommunications, High Performance

Silicon PIN Photodiode

Dual Color Emitting Diodes, 660 nm and 940 nm

Photovoltaic Solar Cell Protection Schottky Rectifier

Silicon PIN Photodiode

Transcription:

TLHR54., TLHY54., TLHG54. High Efficiency LED, Ø 5 mm Tinted Diffused Package DESCRIPTION 9223 The TLH.54.. series was developed for standard applications like general indicating and lighting purposes. It is housed in a 5 mm tinted diffused plastic package. The wide viewing angle of these devices provides a high on-off contrast. Several selection types with different luminous intensities are offe. All LEDs are categorized in luminous intensity groups. The and LEDs are categorized additionally in wavelength groups. That allows users to assemble LEDs with uniform appearance. FEATRUES Choice of three bright colors Standard T-¾ package Small mechanical tolerances Suitable for DC and high peak current Wide viewing angle Luminous intensity categorized Yellow and color categorized TLH.54.. with stand-offs Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 APPLICATIONS Status lights Off / on indicator Background illumination Readout lights Maintenance lights Legend light PRODUCT GROUP AND PACKAGE DATA Product group: LED Package: 5 mm Product series: standard Angle of half intensity: ± 3 PARTS TABLE PART COLOR LUMINOUS INTENSITY WAVELENGTH FORWARD VOLTAGE (mcd) at I F (nm) at I F (V) at I F (ma) (ma) (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX. TECHNOLOGY TLHR54 Red.6-62 - 625-2 3 2 GaAsP on GaP TLHR54-AS2Z Red.6-62 - 625-2 3 2 GaAsP on GaP TLHR54 Red 4 2-62 - 625-2 3 2 GaAsP on GaP TLHR545 Red 6.3 4-62 - 625-2 3 2 GaAsP on GaP TLHR545-AS2Z Red 6.3 4-62 - 625-2 3 2 GaAsP on GaP TLHR545-AS2 Red 6.3 4-62 - 625-2 3 2 GaAsP on GaP TLHR545-KSZ Red 6.3 4-62 - 625-2 3 2 GaAsP on GaP TLHY54 Yellow.6-58 - 594-2.4 3 2 GaAsP on GaP TLHY54-AS2Z Yellow.6-58 - 594-2.4 3 2 GaAsP on GaP TLHY54 Yellow 4 2-58 - 594-2.4 3 2 GaAsP on GaP TLHY545 Yellow 6.3 4-58 - 594-2.4 3 2 GaAsP on GaP TLHY545-KSZ Yellow 6.3 4-58 - 594-2.4 3 2 GaAsP on GaP TLHG54 Green.6-562 - 575-2.4 3 2 GaP on GaP TLHG54-AS2Z Green.6-562 - 575-2.4 3 2 GaP on GaP TLHG54-BT2 Green.6-562 - 575-2.4 3 2 GaP on GaP TLHG54 Green 4 2-562 - 575-2.4 3 2 GaP on GaP TLHG545 Green 6.3 5-562 - 575-2.4 3 2 GaP on GaP TLHG545-AS2Z Green 6.3 5-562 - 575-2.4 3 2 GaP on GaP TLHG545-KSZ Green 6.3 5-562 - 575-2.4 3 2 GaP on GaP Rev. 2., 6-Mar-5 Document Number: 832 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

TLHR54., TLHY54., TLHG54. ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) TLHR54.., TLHY54.., TLHG54.. PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V R 6 V DC forward current T amb 65 C I F 3 ma Surge forward current t p μs I FSM A Power dissipation T amb 65 C P V mw Junction temperature T j C Operating temperature range T amb -4 to + C Storage temperature range T stg -55 to + C Soldering temperature t 5 s, 2 mm from body T sd 26 C Thermal resistance junction/ambient R thja 35 K/W OPTICAL AND ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) TLHR54., RED PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT TLHR54 I V.6 - mcd Luminous intensity () I F = ma TLHR54 I V 4 2 - mcd TLHR545 I V 6.3 4 - mcd Dominant wavelength I F = ma λ d 62-625 nm Peak wavelength I F = ma λ p - 635 - nm Angle of half intensity I F = ma ϕ - ± 3 - deg Forward voltage I F = 2 ma V F - 2 3 V Reverse voltage I R = μa V R 6 5 - V Junction capacitance V R = V, f = MHz C j - 5 - pf () In one packing unit I Vmin. /I Vmax..5 OPTICAL AND ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) TLHY54., YELLOW PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT TLHY54 I V.6 - mcd Luminous intensity () I F = ma TLHY54 I V 4 2 - mcd TLHY545 I V 6.3 4 - mcd Dominant wavelength I F = ma λ d 58-594 nm Peak wavelength I F = ma λ p - 585 - nm Angle of half intensity I F = ma ϕ - ± 3 - deg Forward voltage I F = 2 ma V F - 2.4 3 V Reverse voltage I R = μa V R 6 5 - V Junction capacitance V R = V, f = MHz C j - 5 - pf () In one packing unit I Vmin. /I Vmax..5 Rev. 2., 6-Mar-5 2 Document Number: 832 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

TLHR54., TLHY54., TLHG54. OPTICAL AND ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) TLHG54., GREEN PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT TLHG54 I V.6 - mcd Luminous intensity () I F = ma TLHG54 I V 4 2 - mcd TLHG545 I V 6.3 5 - mcd Dominant wavelength I F = ma λ d 562-575 nm Peak wavelength I F = ma λ p - 565 - nm Angle of half intensity I F = ma ϕ - ± 3 - deg Forward voltage I F = 2 ma V F - 2.4 3 V Reverse voltage I R = μa V R 6 5 - V Junction capacitance V R = V, f = MHz C j - 5 - pf () In one packing unit I Vmin. /I Vmax..5 LUMINOUS INTENSITY CLASSIFICATION GROUP LUMINOUS INTENSITY (mcd) STANDARD MIN. MAX. M.6 3.2 N 2.5 5 P 4 8 Q 6.3 2.5 R 2 S 6 32 T 25 5 U 4 8 V 63 25 W 2 X 3 26 Y 8 36 Z 24 48 Luminous flux is tested at a current pulse duration of 25 ms and an accuracy of ± %. The above type numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each bag (there will be no mixing of two groups in each bag). In order to ensure availability, single brightness groups will not be orderable. In a similar manner for colors where wavelength groups are measu and binned, single wavelength groups will be shipped on any one bag. In order to ensure availability, single wavelength groups will not be orderable. COLOR CLASSIFICATION DOM. WAVELENGTH (nm) GROUP YELLOW GREEN MIN. MAX. MIN. MAX. 58 584 2 583 586 3 585 588 562 565 4 587 59 564 567 5 589 592 566 569 6 59 594 568 57 7 57 573 8 572 575 Wavelengths are tested at a current pulse duration of 25 ms. Rev. 2., 6-Mar-5 3 Document Number: 832 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

TLHR54., TLHY54., TLHG54. TYPICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) 6 5 4 3 2 t p /T =. t p = µs 95 46 2 4 6 8 T amb - Ambient Temperature ( C). 2 4 6 8 95 26 V F - Forward Voltage (V) Fig. - Forward Current vs. Ambient Temperature Fig. 4 - Forward Current vs. Forward Voltage t p /T =..5.2.2 T amb 85 C.5.. 95 25 t p - Pulse Length (ms)..6.2.8.4 95 27 I F = ma 2 4 6 8 T amb - Ambient Temperature ( C) Fig. 2 - Forward Current vs. Pulse Length Fig. 5 - Relative Luminous Intensity vs. Ambient Temperature..9.8.7 95 42.6 2 3 4 5 6 7 8.4.2.2.4.6 95 32 2.4 2..6.2.8.4 2 5 2 5.5.2..5.2 I F (ma) t p /T Fig. 3 - Rel. Luminous Intensity vs. Angular Displacement Fig. 6 - Relative Luminous Intensity vs. Forward Current/Duty Cycle Rev. 2., 6-Mar-5 4 Document Number: 832 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

TLHR54., TLHY54., TLHG54... 95 29.6.2.8.4 95 3 I F = ma 2 4 6 8 T amb - Ambient Temperature ( C) Fig. 7 - Relative Luminous Intensity vs. Forward Current Fig. - Relative Luminous Intensity vs. Ambient Temperature.2..8.6.4.2 59 6 63 65 67 95 4 λ - Wavelength (nm) 69 I spec - Specific Luminous Intensity 2.4 2..6.2.8.4 2 5 2 5 95 26.5.2..5.2 I F (ma) t p /T Fig. 8 - Relative Intensity vs. Wavelength Fig. - Relative Luminous Intensity vs. Forward Current/Duty Cycle. 2 95 3 V F - Forward Voltage (V) 4 6 t p /T =. t p = µs 8.. 95 33 Fig. 9 - Forward Current vs. Forward Voltage Fig. 2 - Relative Luminous Intensity vs. Forward Current Rev. 2., 6-Mar-5 5 Document Number: 832 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

TLHR54., TLHY54., TLHG54. I rel - Relative Intensity.2..8.6.4.2 55 57 59 6 63 95 39 λ - Wavelength (nm) 65 I spec - Specific Luminous Intensity 2.4 2..6.2.8.4 2 5 2 5 I F (ma) 95 263.5.2..5.2 t p /T Fig. 3 - Relative Intensity vs. Wavelength Fig. 6 - Specific Luminous Intensity vs. Forward Current. 2 95 34 V F - Forward Voltage (V) 4 6 t p /T =. t p = µs 8. 95 37 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Luminous Intensity vs. Forward Current.6.2.8.4 95 35 I F = ma 2 4 6 8 T amb - Ambient Temperature ( C) I rel - Relative Intensity.2..8.6.4.2 52 54 56 58 6 95 38 λ - Wavelength (nm) 62 Fig. 5 - Relative Luminous Intensity vs. Ambient Temperature Fig. 8 - Relative Intensity vs. Wavelength Rev. 2., 6-Mar-5 6 Document Number: 832 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

TLHR54., TLHY54., TLHG54. PACKAGE DIMENSIONS in millimeters A C Ø 5.8 ±.5 R 2.49 (sphere) 35.5 ±.55 2.5 ±.3 8.7 ±.3 7.7 ±.5 (4.7) <.7. ±.25 Area not plane Ø 5 ±.5 min..5 +.5 -.5.5 +.5 -.5 technical drawings according to DIN specifications 2.54 nom. 6.544-5258.2-4 Issue: 7; 23.7. 95 96 REEL TAPE 355 52 max. 9 Adhesive tape Identification label Reel Diodes: anode before cathode Phototransistors: emitter before collector Code 2 3 Paper Diodes: cathode before anode Phototransistors: collector before emitter Code 2 Identification label: Vishay/type/group/tape code/production code/quantity 48 45 94864 Tape 94 867 Fig. 9 - Reel Dimensions Fig. 2 - LED in Tape AS2 = cathode leaves tape first AS2 = anode leaves tape first Rev. 2., 6-Mar-5 7 Document Number: 832 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

TLHR54., TLHY54., TLHG54. AMMOPACK Tape feed Label C A B 94 8667- Fig. 2 - Tape Direction The new nomenclature for ammopack is e.g. ASZ only, without suffix for the LED orientation. The carton box has to be turned to the desi position: + for anode first, or - for cathode first. AS2Z and AS2Z are still valid for already existing types, BUT NOT FOR NEW DESIGN. TAPE DIMENSIONS in millimeters Quantity per: Ammopack/reel (Mat.-No. 764) 94872_ Option Dim. H ±.5 mm Dim. X ±.5 mm AS 7.3 - BT 2. 6. KS 9.7 - Rev. 2., 6-Mar-5 8 Document Number: 832 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2/65/EU of The European Parliament and of the Council of June 8, 2 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 22/95/EC. We confirm that all the products identified as being compliant to Directive 22/95/EC conform to Directive 2/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS79A standards. Please note that some Vishay documentation may still make reference to the IEC 6249-2-2 definition. We confirm that all the products identified as being compliant to IEC 6249-2-2 conform to JEDEC JS79A standards. Revision: 2-Oct-2 Document Number: 9