2N425 2N425 B E TO-92 This device is designed for use as general purpose amplifiers and switches requiring collector currents of µa to ma. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol Parameter Value Units VEO ollector-emitter Voltage 3 V VBO ollector-base Voltage 3 V VEBO Emitter-Base Voltage 4. V I ollector urrent - ontinuous 2 ma TJ, Tstg Operating and Storage Junction Temperature Range -55 to +5 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: ) These ratings are based on a maximum junction temperature of 5 degrees. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal haracteristics TA = 25 unless otherwise noted Symbol haracteristic Max Units 2N425 P D Total Device Dissipation Derate above 25 625 5. mw mw/ RθJ Thermal Resistance, Junction to ase 83.3 /W RθJA Thermal Resistance, Junction to Ambient 2 /W 2 Fairchild Semiconductor orporation 2N425, Rev A
Electrical haracteristics TA = 25 unless otherwise noted Symbol Parameter Test onditions Min Max Units 2N425 OFF HARATERISTIS V (BR)EO ollector-emitter Breakdown Voltage* I =. ma, I B = 3 V V(BR)BO ollector-base Breakdown Voltage I = µa, I E = 3 V V(BR)EBO Emitter-Base Breakdown Voltage IE = µa, I = 4. V I BO ollector-utoff urrent V B = 2 V, I E = 5 na IEBO Emitter-utoff urrent VEB = 3. V, I = 5 na ON HARATERISTIS* h FE D urrent Gain V E =. V, I = 2. ma VE =. V, I = 5 ma 5 25 5 VE(sat) ollector-emitter Saturation Voltage I = 5 ma, IB = 5. ma.4 V VBE(sat) Base-Emitter Saturation Voltage I = 5 ma, IB = 5. ma.95 V SMALL SIGNAL HARATERISTIS ob Output apacitance V B = 5. V, f = khz 4.5 pf ib Input apacitance VBE =.5 V, f = khz pf hfe Small-Signal urrent Gain I = 2. ma, VE = V, f =. khz I = ma, VE = 2 V, f = MHz NF Noise Figure VE = 5. V, I = µa, RS =. kω, f = Hz to 5.7 khz, *Pulse Test: Pulse Width 3 µs, Duty ycle 2.% 5 2. 2 5. db
Typical haracteristics 2N425 h - TYPIAL PULSED URRENT GAIN FE 25 2 5 Typical Pulsed urrent Gain vs ollector urrent 25 25-4 5..2.5 2 5 2 5 I - OLLETOR URRENT (ma) V =.V E V - OLLETOR EMITTER VOLTAGE (V) ESAT.3.25.2.5..5 ollector-emitter Saturation Voltage vs ollector urrent β = 2 I - OLLETOR URRENT (ma) 25 25-4 V - BASE EMITTER VOLTAGE (V) BESAT.8.6.4.2 Base-Emitter Saturation Voltage vs ollector urrent β = 2 I - OLLETOR URRENT (ma) - 4 25 25 V - BASE EMITTER ON VOLTAGE (V) BE( ON).8.6.4.2 Base Emitter ON Voltage vs ollector urrent - 4. 25 I - OLLETOR URRENT (ma) 25 25 V E = V I - OLLETOR URRENT (na) BO. ollector-utoff urrent vs Ambient Temperature V = 25V B. 25 5 75 25 T A - AMBIENT TEMPERATURE ( ) APAITANE (pf) 8 6 4 2 ommon-base Open ircuit Input and Output apacitance vs Reverse Bias Voltage obo ibo. REVERSE BIAS VOLTAGE (V)
2N425 Typical haracteristics NF - NOISE FIGURE (db) 6 5 4 3 2 Noise Figure vs Frequency V = 5.V E I = µa, R S = 2Ω I =. ma, R = 2Ω S I = µa, R = 2. kω S. f - FREQUENY (khz) NF - NOISE FIGURE (db) 2 8 6 4 2 Noise Figure vs Source Resistance I =. ma V E = 5.V f =. khz I = µa. R S - SOURE RESISTANE ( kω ) 5 Switching Times vs ollector urrent 5 Turn On and Turn Off Times vs ollector urrent t s t off TIME (ns) I c I B= I B2= t f t r TIME (ns) I c t on I B = V =.5V BE(OFF) I c t off I B= I B2= t on t d I - OLLETOR URRENT (ma) I - OLLETOR URRENT (ma) Power Dissipation vs Ambient Temperature P - POWER DISSIPATION (W) D.75.5.25 TO-92 SOT-23 SOT-223 25 5 75 25 5 o TEMPERATURE ( )
µ Ω Typical haracteristics 2N425 h - VOLTAGE FEEDBAK RATIO (x ) _ 4 re Voltage Feedback Ratio. I - OLLETOR URRENT (ma) h - INPUT IMPEDANE (k ) ie Input Impedance V E = V f =. khz.. I - OLLETOR URRENT (ma) h - OUTPUT ADMITTANE ( mhos) oe Output Admittance V E = V f =. khz. I - OLLETOR URRENT (ma) h - URRENT GAIN fe 5 2 5 2 urrent Gain V E = V f =. khz. I - OLLETOR URRENT (ma)
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