CNY7-2,CNY7-,CNY7-4 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor CNY7-2,CNY7-,CNY7-4 AC Line / Digital Logic Isolator Unit in mm Digital Logic / Digital Logic Isolator Telephone Line Receiver Twisted Pair Line Receiver High Frequency Power Supply Feedback Conol Relay Contact Monitor The TOSHIBA Corporation CNY7 consist of a gallium arsenide infrared emitting diode coupled with a silicon photo ansistor in a dual in line package. Small package size and low cost Fast switching speeds: µs (typ.) High DC current ansfer ratio: CTR(IF = ma, VCE = V) CNY7 2: 6~2% CNY7 : ~200% CNY7 4: 60~20% High isolation resistance: Ω (typ.) TOSHIBA Weight: 0.4 g 7A8 High isolation voltage: 4400V (min.) Pin Configuration 2 6 4 : Anode 2 : Cathode : N.C. 4 : Emitter : Collector 6 : Base 2002-09-2
CNY7-2,CNY7-,CNY7-4 Maximum Ratings (Ta = 2 C) Characteristic Symbol Rating Unit Forward current I F 60 ma Forward current derating I F / C 0.8 * ma / C LED Photo ansistor Peak forward current (Note) I PF A Power dissipation P D mw Power dissipation derating P D / C. * mw / C Reverse voltage V R 6 V Collector emitter voltage BV CEO 70 V Collector base voltage BV CBO 70 V Emitter collector voltage BV ECO 7 V Collector current I C ma Power dissipation P C mw Power dissipation derating P C / C 2.0 * mw / C Storage temperature T stg ~ C Operating temperature T opr ~ C Coupled Lead soldering temperature ( s) T sol 260 C Total package dissipation P T 200 mw Total package power dissipation derating P T / C 2.6 * mw / C (Note)Pulse width µs, 0pps. * Above 2 C ambient. 2 2002-09-2
CNY7-2,CNY7-,CNY7-4 Elecical Characteristics (Ta = 2 ) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage V F I F = 60 ma..6 V LED Photo ansistor Coupled Reverse current I R V R = V µa Capacitance C D V = 0, f = MHz pf DC forward current gain Collector emitter breakdown voltage Collector base breakdown voltage Emitter collector breakdown voltage h FE V CE =, I C = 0 µa 200 V (BR) CEO I C = ma, I F = 0 70 V V (BR) CBO I C = µa, I F = 0 70 V V (BR) ECO I E = µa, I F = 0 7 V Collector dark current I CEO V CE = V, I F = 0 na Collector dark current I CBO V CB = V, I F = 0 0. 20 na Collector emitter capacitance Current ansfer ratio C CE V = 0, f = MHz pf CNY7 2 6 2 CNY7 CTR I F = ma, V CE = V 200 CNY7 4 60 20 Saturation voltage V CE (sat) I F = ma, I C = 2. ma 0.4 V Capacitance input to output C S V = 0, f = MHz 0.8 pf Isolation resistance R S V = 0 V Ω DC isolation voltage BV S DC minute 4400 V Rise fall time Rise / fall time photo diode t r / t f t r / t f V CE = V, I C = 2 ma R L = Ω V CB = V, I CB = µa R L = Ω % µs 200 ns 2002-09-2
CNY7-2,CNY7-,CNY7-4 I F Ta P C Ta 200 80 60 Allowable forward current IF (ma) 60 40 20 Allowable collector power dissipation PC (mw) 20 80 40 0-20 0 20 40 60 80 20 0-20 0 20 40 60 80 20 I FP D R I F V F Allowable pulse forward current IFP (ma) 00 00 0 0 0 Pulse width µs Ta = 2 C Forward current IF (ma) 0. 0. Ta = 2 C - -2-0 0. 0.6 0.8.0.2.4.6.8 Duty cycle ratio D R Forward voltage VF (V) V F / Ta I F I FP V FP -.2 0 Forward voltage temperature coefficient VF / Ta (mv / C) -2.8-2.4-2.0 -.6 -.2-0.8-0.4 0. 0. 0. Pulse forward current IFP (ma) 0 0 0.6.0 Pulse width µs Repetitive frequency = Hz Ta = 2 C.4.8 2.2 2.6 Forward current I F (ma) Pulse forward voltage VFP (V) 4 2002-09-2
CNY7-2,CNY7-,CNY7-4 I C / I F I C / I F I F Collector current IC (ma) Ta = 2 C VCE = V VCE = 0.4 V Sample A Sample B Current ansfer ratio IC / IF (%) 400 Ta = 2 C VCE = V VCE = 0.4 V 0 Sample A 200 Sample B 0 0 Forward current I F (ma) 0. 0.2 Forward current I F (ma) 60 I C V CE 20 ma Ta = 2 C Collector current IC (ma) 40 20 ma ma IF = ma 0 0 2 4 6 8 2 4 I C Ta Collector-emitter voltage V CE (V) 0 0 IF = ma VCE = V Collector current IC (ma) 0. 0. ma ma ma 0. ma Collector-emitter saturation voltage VCE (sat) (V) 0. 0. 0. 0.0 0.0 V CE (sat) Ta 0. 60 40 20 0 20 40 60 80 0.0 60 40 20 0 20 40 60 80 2002-09-2
CNY7-2,CNY7-,CNY7-4 I CEO Ta I D R BE Collector dark current ICEO (µa) 0 2 VCE = 24 V V V Dark current ID (µa) 0. 0. 0. 0.0 0.0 0.0 VCE = 24 V Ta = C k M M Base-emitter resistance R BE (Ω) 4 0 20 40 60 80 20 Switching Characteristics R L (Saturated Operation) R BE Switching Characteristics (Saturated Operation) 0 0 IF = ma IF VCC = V RL Ta = 2 C IF VCC = V 4.kΩ IF Switching time (µs) 0 V 90% 0V % ts ts Switching time (µs) ts RBE IF 90% % 90% % ts ts 0. M M 0 k Load resistance R L (kω) Base-emitter resistance R BE (Ω) 6 2002-09-2
CNY7-2,CNY7-,CNY7-4 RESTRICTIONS ON PRODUCT USE 000707EBC TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent elecical sensitivity and vulnerability to physical sess. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general eleconics applications (computer, personal equipment, office equipment, measuring equipment, indusial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires exaordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy conol insuments, airplane or spaceship insuments, ansportation insuments, affic signal insuments, combustion conol insuments, medical insuments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other indusial waste or with domestic garbage. The products described in this document are subject to the foreign exchange and foreign ade laws. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 7 2002-09-2
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