MOSFET 7VCoolMOSªP7PowerTransistor CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies. ThelatestCoolMOS P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,tv,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof thearteaseofuselevel.thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns. PGSOT223 Features ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss Excellentthermalbehavior IntegratedESDprotectiondiode Lowswitchinglosses(Eoss) Productvalidationacc.JEDECStandard Benefits Costcompetitivetechnology Lowertemperature HighESDruggedness Enablesefficiencygainsathigherswitchingfrequencies Enableshighpowerdensitydesignsandsmallformfactors Potentialapplications RecommendedforFlybacktopologiesforexampleusedinChargers, Adapters,LightingApplications,etc. Gate Pin Drain Pin 2, Tab Source Pin 3 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. TableKeyPerformanceParameters Parameter Value Unit VDS @ Tj=25 C 7 V RDS(on),max. Ω Qg,typ.7 nc ID,pulse 8.2 A Eoss @ V.6 µj V(GS)th,typ 3 V ESD class (HBM) C Type/OrderingCode Package Marking RelatedLinks PGSOT223 7SK see Appendix A Rev.2.3,2823
TableofContents Description............................................................................. Maximum ratings........................................................................ 3 Thermal characteristics.................................................................... 3 Electrical characteristics................................................................... Electrical characteristics diagrams........................................................... 6 Test Circuits........................................................................... Package Outlines....................................................................... Appendix A............................................................................ 2 Revision History........................................................................ 3 Trademarks........................................................................... 3 Disclaimer............................................................................ 3 2 Rev.2.3,2823
Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current ) ID 2.5 A TC = 2 C TC = C Pulsed drain current 2) ID,pulse 8.2 A TC=25 C Application (Flyback) relevant avalanche current, single pulse 3) IAS 2. A MOSFET dv/dt ruggedness dv/dt V/ns VDS=...V Gate source voltage VGS 6 3 6 3 V measured with standard leakage inductance of transformer of 5µH static; AC (f> Hz) Power dissipation Ptot 6.2 W TC=25 C Operating and storage temperature Tj,Tstg 5 C Continuous diode forward current IS. A TC=25 C Diode pulse current 2) IS,pulse 8.2 A TC = 25 C Reverse diode dv/dt ) dv/dt V/ns VDS=...V,ISD<=IS,Tj=25 C Maximum diode commutation speed ) dif/dt 5 A/µs VDS=...V,ISD<=IS,Tj=25 C Insulation withstand voltage VISO n.a. V Vrms, TC=25 C, t=min 2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction solder point Thermal resistance, junction ambient for minimal footprint Thermal resistance, junction ambient soldered on copper area Soldering temperature, wavesoldering only allowed at leads RthJS 2. C/W RthJA 6 C/W minimal footprint RthJA 75 C/W Tsold 26 C reflow MSL Device on mm*mm*.5 epoxy PCB FR with 6cm 2 (one layer 7µm thick) copper area for drain connection and cooling. PCB is vertical without blown air. ) DPAK / IPAK equivalent. Limited by Tj max. Tj = 2 C. Maximum duty cycle D=.5 2) Pulse width tp limited by Tj,max 3) Proven during verification test. For explanation please read AN CoolMOS TM 7V P7. ) VDClink=V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 3 Rev.2.3,2823
3Electricalcharacteristics TableStaticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 7 V VGS=V,ID=mA Gate threshold voltage V(GS)th 2.5 3 3.5 V VDS=VGS,ID=.mA Zero gate voltage drain current IDSS µa VDS=7V,VGS=V,Tj=25 C VDS=7V,VGS=V,Tj=5 C Gatesource leakage current incl. Zener IGSS µa VGS=2V,VDS=V diode Drainsource onstate resistance RDS(on).5 2.62. Ω VGS=V,ID=.7A,Tj=25 C VGS=V,ID=.7A,Tj=5 C Gate resistance RG.6 Ω f=mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 58 pf VGS=V,VDS=V,f=25kHz Output capacitance Coss 3 pf VGS=V,VDS=V,f=25kHz Effective output capacitance, energy related ) Co(er) 9 pf VGS=V,VDS=...V Effective output capacitance, time related 2) Co(tr) 3 pf ID=constant,VGS=V,VDS=...V Turnon delay time td(on) 2 ns Rise time tr.9 ns Turnoff delay time td(off) 63 ns Fall time tf 6 ns VDD=V,VGS=3V,ID=.5A, RG=.2Ω VDD=V,VGS=3V,ID=.5A, RG=.2Ω VDD=V,VGS=3V,ID=.5A, RG=.2Ω VDD=V,VGS=3V,ID=.5A, RG=.2Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs.7 nc VDD=V,ID=.5A,VGS=toV Gate to drain charge Qgd.7 nc VDD=V,ID=.5A,VGS=toV Gate charge total Qg.7 nc VDD=V,ID=.5A,VGS=toV Gate plateau voltage Vplateau.3 V VDD=V,ID=.5A,VGS=toV ) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromtoV 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromtoV Rev.2.3,2823
Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=.9A,Tj=25 C Reverse recovery time trr 3 ns VR=V,IF=.5A,diF/dt=5A/µs Reverse recovery charge Qrr. µc VR=V,IF=.5A,diF/dt=5A/µs Peak reverse recovery current Irrm 6 A VR=V,IF=.5A,diF/dt=5A/µs 5 Rev.2.3,2823
Electricalcharacteristicsdiagrams Diagram:Powerdissipation Diagram2:Safeoperatingarea 2 9 8 µs 7 µs Ptot[W] 6 5 ID[A] µs ms 3 2 2 ms DC 25 5 75 25 5 TC[ C] Ptot=f(TC) 3 2 3 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp Diagram3:Safeoperatingarea 2 Diagram:Max.transientthermalimpedance 2 ID[A] µs µs µs ms ZthJC[K/W].5.2..5.2 2 ms. single pulse DC 3 2 3 VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp 5 3 2 tp[s] ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.3,2823
Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 9 8 2 V V 8 V 7 6 2 V V 8 V 7 V 7 7 V 5 ID[A] 6 5 6 V 5.5 V ID[A] 3 6 V 5.5 V 5 V 3 2 2 5 V.5 V.5 V 5 5 2 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 5 5 2 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance 6. 6.5 V Diagram8:Drainsourceonstateresistance. 5.5 5 V 5.5 V 6 V 3.5 5. 3..5 2.5 RDS(on)[Ω]. 3.5 7 V V RDS(on)[Ω] 2..5 98% typ 3.. 2.5.5 2. 5 5 ID[A] RDS(on)=f(ID);Tj=25 C;parameter:VGS. 5 25 25 5 75 25 5 Tj[ C] RDS(on)=f(Tj);ID=.7A;VGS=V 7 Rev.2.3,2823
Diagram9:Typ.transfercharacteristics Diagram:Typ.gatecharge 9 9 8 25 C 8 7 7 2 V 6 6 V ID[A] 5 5 C VGS[V] 5 3 3 2 2 2 6 8 2 VGS[V] ID=f(VGS);VDS=2V;parameter:Tj 2 6 Qgate[nC] VGS=f(Qgate);ID=.5Apulsed;parameter:VDD Diagram:Forwardcharacteristicsofreversediode 2 25 C 25 C Diagram3:Drainsourcebreakdownvoltage 8 82 8 78 76 IF[A] VBR(DSS)[V] 7 72 7 68 66 6 62..5..5 2. VSD[V] IF=f(VSD);parameter:Tj 6 75 5 25 25 5 75 25 5 75 Tj[ C] VBR(DSS)=f(Tj);ID=mA 8 Rev.2.3,2823
Diagram:Typ.capacitances Diagram5:Typ.Cossstoredenergy.2 3. Ciss.8 2 C[pF] Eoss[µJ].6 Coss. Crss.2 2 3 5 VDS[V] C=f(VDS);VGS=V;f=25kHz. 2 3 5 6 7 VDS[V] Eoss=f(VDS) 9 Rev.2.3,2823
5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g V DS R g 2 I F R g = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform V DS 9% V DS V GS V GS % t d(on) t r t d(off) t f t on t off TableUnclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V DS I D V DS Rev.2.3,2823
6PackageOutlines DOCUMENT NO. Z8B8553 DIM MILLIMETERS INCHES MIN MAX MIN MAX A.52.8.6.7 A.. A2,5.7.59.67 b.6.8.3 b2 2.95 3..22 c.2.32.3 D E E e e L N O 6.3 6.7 3.3 6.7 7.3.2.6.9.28.26.287.26 3.7.3.6 2.3 BASIC.6 BASIC.9 BASIC.8 BASIC.75..3.3 3 3 SCALE 2.5 EUROPEAN PROJECTION 2.5 ISSUE DATE 2226 REVISION 5mm FigureOutlinePGSOT223,dimensionsinmm/inches Rev.2.3,2823
7AppendixA TableRelatedLinks IFXCoolMOSªP7Webpage:www.infineon.com IFXDesigntools:www.infineon.com 2 Rev.2.3,2823
RevisionHistory Revision:2823,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2. 27623 Release of final version 2. 2773 correction of key performance parameters 2.2 2795 Changed to MSL level 2.3 2823 Corrected front page text TrademarksofInfineonTechnologiesAG AURIX,C66,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust25 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 8726München,Germany 28InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 3 Rev.2.3,2823