HMC985A. attenuators - analog - Chip. GaAs MMIC VOLTAGE - VARIABLE ATTENUATOR, GHz. Features. Typical Applications. General Description

Similar documents
Features. The HMC985 is ideal for: = +25 C, See Test Conditions. Parameter Condition Min. Typ. Max. Units db. Output Return Loss 13 db

Features. = +25 C, Vdd1, Vdd2 = +5V

Features. = +25 C, Vdd= +5V

Features. = +25 C, Vdd= 5V, Idd= 60 ma*

Features. = +25 C, Vdd= 2V [1], Idd = 55mA [2]

Features OUT E S T CODE. = +25 C, Vdd= 8V, Idd= 60 ma*

Features. Parameter Frequency (GHz) Min. Typ. Max. Units. Attenuation Range GHz 31 db. All States db db. 0.

Features. = +25 C, Vdd 1, 2, 3 = +3V

Features. = +25 C, 50 Ohm System

Features. = +25 C, Vdd= +5V, Idd = 66mA

Features dbm

Features. = +25 C, Vdd 1, 2, 3 = +3V

Features. = +25 C, With 0/-5V Control, 50 Ohm System

Features. = +25 C, With 0/-5V Control, 50 Ohm System

Features. = +25 C, Vdd = +5V, Idd = 63 ma

Features. = +25 C, Vdd = +3V

HMC906A. Amplifiers - Linear & Power - CHIP. Electrical Specifications, T A. Typical Applications. Features. General Description. Functional Diagram

Features. Noise Figure db Supply Current (Idd) ma Supply Voltage (Vdd) V

Features. = +25 C, Vdd = +10V, Idd = 350mA

Features. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz. Attenuation Range GHz 31 db

Features. = +25 C, 50 ohm system. DC - 12 GHz: DC - 20 GHz: DC - 12 GHz: GHz: ns ns Input Power for 0.25 db Compression (0.

Features. = +25 C, Vdd = 5V, Idd = 200 ma*

Features. = +25 C, Vdd = 5V, Idd = 85mA*

Features. Parameter Frequency Min. Typ. Max. Units GHz GHz GHz GHz GHz GHz

HMC650 TO HMC658 v

Features. = +25 C, 50 ohm system. DC - 12 GHz: DC - 20 GHz: DC - 12 GHz: GHz: ns ns Input Power for 0.25 db Compression (0.

Features. DC - 2 GHz GHz Supply Current (Idd) 400 ma

HMC994A AMPLIFIERS - LINEAR & POWER - CHIP. GaAs phemt MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz. Features. Typical Applications

Features. = +25 C, Vdd = +6V, Idd = 375mA [1]

Features OBSOLETE. Output Third Order Intercept (IP3) [2] dbm Total Supply Current ma

HMC465 AMPLIFIERS- DRIVERS & GAIN BLOCKS - CHIP. GaAs phemt MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz. Electrical Specifications, T A.

Features. = +25 C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +6V, Idd = 1400 ma [1]

HMC-APH596 LINEAR & POWER AMPLIFIERS - CHIP. GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, GHz. Typical Applications. Features

Features. = +25 C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200mA [1]

HMC561 FREQUENCY MULTIPLIER - ACTIVE - CHIP. Electrical Specifications, T A. Features. Typical Applications. General Description. Functional Diagram

Features. = +25 C, Vdd = 5V

HMC814. GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, GHz OUTPUT. Features. Typical Applications. Functional Diagram. General Description

Customised Pack Sizes / Qtys. Support for all industry recognised supply formats: o o o. Waffle Pack Gel Pak Tape & Reel

Features. = +25 C, Vdd 1, 2, 3, 4 = +3V

HMC576 FREQUENCY MULTIPLIERS - ACTIVE - CHIP. GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, GHz OUTPUT. Features. Typical Applications

HMC998. Amplifiers - Linear & Power - Chip. GaAs phemt MMIC 2 WATT POWER AMPLIFIER, GHz. Electrical Specifications, T A.

= +25 C, IF= 100 MHz, LO = +15 dbm*

HMC-SDD112 SWITCHES - CHIP. GaAs PIN MMIC SPDT SWITCH GHz. Typical Applications. Features. General Description. Functional Diagram

Features. = +25 C, With Vdd = +5V & Vctl = 0/+5V (Unless Otherwise Noted)

Features. = 25 C, IF = 3 GHz, LO = +16 dbm

Insertion Loss vs. Temperature TEL: FAX: v4.18 Relative Attenuation ATTENUATOR, DC - 2 GHz 1 INSERTION L

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vdd 1, 2, 3 = +3V

Features. = +25 C, Vdd 1, 2, 3 = +3V

GaAs phemt MMIC Low Noise Amplifier, 0.3 GHz to 20 GHz HMC1049

14 GHz to 32 GHz, GaAs, MMIC, Double Balanced Mixer HMC292A

Features OBSOLETE. = +25 C, 5 ma Bias Current

GaAs, phemt, MMIC, Power Amplifier, HMC1126. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION

Features OBSOLETE. = +25 C, With 0/-5V Control, 50 Ohm System. DC - 10 GHz DC - 6 GHz DC - 15 GHz. DC - 6 GHz DC - 15 GHz

Features. Gain: 15.5 db. = +25 C, Vdd = 5V

Features. = +25 C, Vdd= +8V *

GaAs, phemt, MMIC, Power Amplifier, 2 GHz to 50 GHz HMC1126

Features. Output Third Order Intercept (IP3) [2] dbm Power Added Efficiency %

Features. Parameter Min. Typ. Max. Units. Frequency Range 8 12 GHz Insertion Loss* 5 7 db. Input Return Loss* 10 db

Features. = +25 C, LO Drive = +15 dbm* Parameter Min. Typ. Max. Units Frequency Range, RF & LO 4-8 GHz Frequency Range, IF DC - 3 GHz

Customised Pack Sizes / Qtys. Support for all industry recognised supply formats: o o o. Waffle Pack Gel Pak Tape & Reel

HMC397 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP. InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz. Features. Typical Applications. General Description

81 GHz to 86 GHz, E-Band Power Amplifier With Power Detector HMC8142

Features. Parameter Min. Typ. Max. Units. Frequency Range 3 6 GHz Insertion Loss* db. Input Return Loss* 12 db

HMC-AUH232 MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP. GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz. Typical Applications.

Features. = +25 C, 50 Ohm System. Return Loss (Input and Output) 5-18 GHz 8 db

Features. Gain: 12 db. 50 Ohm I/O s

71 GHz to 76 GHz, 1 W E-Band Power Amplifier with Power Detector ADMV7710

TEL: FAX: v1.77 HMC64 Insertion Loss, Major States Only Normalized Loss, Major States Only 4 INSERTION LOSS (db)

2 GHz to 30 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC8402

20 GHz to 44 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC1040CHIPS

71 GHz to 76 GHz, 1 W E-Band Power Amplifier with Power Detector ADMV7710

DC to 28 GHz, GaAs phemt MMIC Low Noise Amplifier HMC8401

50 GHz to 95 GHz, GaAs, phemt, MMIC, Wideband Power Amplifier ADPA7001CHIPS

Features. = +25 C, 50 Ohm system

71 GHz to 76 GHz, E-Band Variable Gain Amplifier HMC8120

Features. = +25 C, 50 Ohm System, Vcc = 5V

0.1 GHz to 18 GHz, GaAs SP4T Switch HMC641A

HMC6590. transimpedance amplifiers - chip. 43 Gbps Transimpedance Amplifier. Typical Applications. Features. Functional Diagram. General Description

Features. = +25 C, 50 Ohm system

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

FEATURES DESCRIPTION ABSOLUTE MAXIMUM RATINGS. T AMB = +25 C ( Unless otherwise specified )

Passive MMIC 30GHz Equalizer

High Isolation GaAs MMIC Doubler

Passive MMIC 26-40GHz Bandpass Filter

Features = +5V. = +25 C, Vdd 1. = Vdd 2

MASW M/A-COM Products V2. with Integrated Bias Network. Features. Description. Yellow areas denote wire bond pads.

Features. = +25 C, Vdd = 5V, Vgg1 = Vgg2 = Open

Features. = +25 C, Vdd = +4V, Idd = 90 ma [2]

Features. Gain: 17 db. OIP3: 25 dbm. = +25 C, Vdd 1, 2 = +3V

Features. = +25 C, Vdd= 5V, Vgg2= Open, Idd= 60 ma*

Features. Preliminary. = +25 C, IF = 1 GHz, LO = +13 dbm*

Customised Pack Sizes / Qtys. Support for all industry recognised supply formats: o o o. Waffle Pack Gel Pak Tape & Reel

Features. Parameter Min. Typ. Max. Units. Frequency Range 8 12 GHz GHZ. Input Return Loss* GHZ 10 db

GaAs MMIC Millimeter Wave Doubler. Description Package Green Status

MAAP Power Amplifier, 15 W GHz Rev. V1. Features. Functional Schematic. Description. Pin Configuration 2. Ordering Information

Features. = +25 C, Vdd 1, 2, 3 = +3V

Non-Linear Transmission Line Comb Generator

Features OBSOLETE. = +25 C, 50 Ohm system, Vdd = +5V. Parameter Frequency Min. Typ. Max. Units GHz

Features. = +25 C, Vdd = +10 V, Idd = 350 ma

Transcription:

Typical Applications The is ideal for: Point-to-Point Radio VSAT Radio Test Instrumentation Microwave Sensors Military, ECM & Radar Functional Diagram v2.917 ATTENUATOR, 2-5 GHz Features Wide Bandwidth: 2-5 GHz Excellent Linearity: +3 db Input IP3 Wide Attenuation Range: db Die Size: 2.78 x 1.37 x.1 mm General Description The is an absorptive Voltage Variable Attenuator (VVA) which operates from 2-5 GHz and is ideal in designs where an analog DC control signal must be used to control RF signal levels over a db dynamic range. It features two shunt-type attenuators which are controlled by two analog voltages, Vctrl1 and Vctrl2. Optimum linearity performance of the attenuator is achieved by first varying Vctrl1 of the first attenuation stage from -5V to V with Vctrl2 fixed at -5V. The control voltage of the second attenuation stage, Vctrl2, should then be varied from -5V to V with Vctrl1 fixed at V. Furthermore, if the Vctrl1 and Vctrl2 pins are connected together it is possible to achieve the full analog attenuation range with only a small degradation in input IP3 performance. Applications include AGC circuits and temperature compensation of multiple gain stages in microwave point to point and VSAT radios. Electrical Specifications, T A = +25 C, See Test Conditions Parameter Frequency Min. Typ. Max. Units 2-27 2.4 3.1 db Insertion Loss 27-2.3 3.4 db Attenuation Range - 5 3.2 4. db 2-27 34 4 db 27-38 41 db - 5 4 db Input Return Loss 13 db Output Return Loss 13 db Input Third Order Intercept (two-tone input Power = 1 dbm Each Tone) [1] 3 dbm [1] Vctrl2 = -5, Vctrl1 = -3.2 worst case - 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 781-329-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D

v2.917 Attenuation vs. Frequency over Vctrl = Variable, Vctrl2 = -5V ATTENUATOR, 2-5 GHz Attenuation vs. Frequency over Vctrl1 = V, Vctrl2 = Variable -5-1 -15-2 -25-3 2 25 3 4 5-4. V -3.4 V -3. V -1.6 V -1. V Attenuation vs. Vctrl1 Over Temperature @ 3 GHz, Vctrl2 = -5V -3-6 -9-12 -15-18 -21-24 -27. V -3-4 -3.5-3 -2.5-2 -1.5-1 -.5 Vctrl1 (V) -1-2 -3-4 -5-6 -7 2 25 3 4 5-4. V -3.4 V -3. V -1.6 V -1. V. V Attenuation vs. Vctrl2 Over Temperature @ 3 GHz, Vctrl1 = V -5-1 -15-2 -25-3 - -4 - -5-4 -3.5-3 -2.5-2 -1.5-1 -.5 Vctrl2 (V) Attenuation vs. Pin @ 24 GHz Vctrl1 = Variable, Vctrl2 = -5V Attenuation vs. Pin @ 24 GHz Vctrl2 = Variable, Vctrl1 = V -4-1 -8-12 -16-2 -2-3 -4-24 3 6 9 12 15 18 21 24 INPUT POWER (dbm) -5 3 6 9 12 15 18 21 24 INPUT POWER (dbm) -4. V -2. V. V -4. V -2. V. V For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 781-329-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D - 2

Input Return Loss Vctrl1 = Variable, Vctrl2 = -5V v2.917 ATTENUATOR, 2-5 GHz Input Return Loss Vctrl1 = V, Vctrl2 = Variable -1-2 -3-4 2 25 3 4 5-4. V -2. V. V Output Return Loss Vctrl1 = Variable, Vctrl2 = -5V -1-2 -3-4 2 25 3 4 5-1 -2-3 -4 2 25 3 4 5-4. V -2. V. V Output Return Loss Vctrl1 = V, Vctrl2 = Variable -1-2 -3-4 2 25 3 4 5-4. V -2. V. V -4. V -2. V. V Input IP3 vs. Input Power @ 24 GHz Vctrl1 = Variable, Vctrl2 = -5V 6 Input IP3 vs. Frequency @ 1dBm Vctrl1 = Variable, Vctrl2 = -5V 5 5 4 3 4 2 1 4 8 12 16 2 3 1 15 2 25 3 4-4. V -3.6 V -2. V. V -4. V. V [1] Worst Case IP3-3 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 781-329-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D

v2.917 Input IP3 vs. Input Power @ 24 GHz Vctrl2 = Variable, Vctrl1 = V 6 ATTENUATOR, 2-5 GHz Input IP3 vs. Frequency @ 1dBm Vctrl2 = Variable, Vctrl1 = V 55 5 4 3 2 1 4 8 12 16 2-4. V -3.6 V -2. V. V Input IP3 vs Input Power over Frequency Vctrl1 = -3.2V, Vctrl2 = -5V [1] 4 3 Input IP3 vs. Input Power Over Temperature @ 24 GHz, Vctrl1 = -3.2V, Vctrl2 = -5V [1] 5 4 1 15 2 25 3 4 4 38 36 34 32 3 28-4. V. V 25 3 6 9 12 15 26 2 4 6 8 1 12 14 16 18 2 1 GHz 2 GHz 25 GHz Input IP3 vs Input Power over Frequency Vctrl2 = -3.2V, Vctrl1 = V [1] Input IP3 vs Input Power over Temperature @ 24 GHz, Vctrl2 = -3.2V, Vctrl1 = V [1] 4 43 41 39 3 37 25 3 6 9 12 15 2 4 6 8 1 12 14 16 18 2 1 GHz 2 GHz 25 GHz [1] Worst Case IP3 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 781-329-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D - 4

v2.917 Attenuation vs Frequency Over Vctrl Vctrl1 = Vctrl2-1 -2-3 -4-5 -6-7 2 25 3 4 5-4.V -3.4 V -3. V -1.6V -1.V. V Attenuation vs. Pin @ 24 GHz Over Vctrl Vctrl1 = Vctrl2-1 -2-3 -4-5 ATTENUATOR, 2-5 GHz Attenuation vs. Vctrl Over Temperature @ GHz, Vctrl1 = Vctrl2-5 -1-15 -2-25 -3 - -4 - -4-3.5-3 -2.5-2 -1.5-1 -.5 Vctrl (V) Input Return Loss, Vctrl1 = Vctrl2-1 -2-3 -6 3 6 9 12 15 18 21 24 INPUT POWER (dbm) -4 2 25 3 4 5-4. V -2. V. V -4. V -2. V. V Output Return Loss, Vctrl1 = Vctrl2 Input IP3 vs. Input Power Over Vctrl @ 24 GHz, Vctrl1 = Vctrl2 6-1 5-2 -3-4 4 3 2-5 2 25 3 4 5 1 4 8 12 16 2-1.2V. V -4. V -3.6 V -2. V. V - 5 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 781-329-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D

v2.917 ATTENUATOR, 2-5 GHz Input IP3 vs. Frequency Vctrl1 = Vctrl2 Input IP3 vs. Input Power Over Temperature @ 24 GHz Vctrl1 = Vctrl2 5 4 3 25 1 15 2 25 3 4-4. V. V Input IP3 vs. Input Power Over Frequency Vctrl1 = Vctrl2 4 3 25 33 31 29 27 25 23 2 4 6 8 1 12 14 16 18 2 2 3 6 9 12 15 1 GHz 2 GHz 25 GHz For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 781-329-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D - 6

Absolute Maximum Ratings Control Voltage Input RF Power Outline Drawing v2.917 +.3 to -6.V 3 dbm Maximum Junction Temperature 175 C Thermal Resistance (R TH ) (junction to ground paddle) Operating Temperature 65 C/W -4 C to +85 C Storage Temperature -65 C to 15 C ESD Sensitivity (HBM) Class 1B ATTENUATOR, 2-5 GHz ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 1 2 4 3 Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the Packaging Information section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS.4 3. TYPICAL BOND PAD IS.26 [.66] SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE ±.2-7 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 781-329-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D

Pad Descriptions v2.917 ATTENUATOR, 2-5 GHz Pad Number Function Description Pin Schematic 1 RFIN This pad is DC coupled and matched to 5 Ohms 2 RFOUT This pad is DC coupled and matched to 5 Ohms 3 Vctrl1 Control Voltage 1 4 Vctrl2 Control Voltage 2 Die Bottom GND Die bottom must be connected to RF/DC ground Assembly Diagram For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 781-329-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D - 8

v2.917 ATTENUATOR, 2-5 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 5 Ohm Microstrip transmission lines on.127 mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If.254 mm (1 mil) thick alumina thin film substrates must be used, the die should be raised.15 mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the.12 mm (4 mil) thick die to a.15 mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is.76 mm to.152 mm (3 to 6 mils). Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 25V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup..12mm (.4 ) Thick GaAs MMIC.76mm (.3 ) RF Ground Plane Wire Bond.127mm (.5 ) Thick Alumina Thin Film Substrate General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 8/2 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 9/1 nitrogen/hydrogen gas is applied, tool tip temperature should be 29 C. DO NOT expose the chip to a temperature greater than 32 C for more than 2 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer s schedule. Wire Bonding Ball or wedge bond with.25 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 15 C and a ball bonding force of 4 to 5 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <.31 mm (12 mils). Figure 1..12mm (.4 ) Thick GaAs MMIC.76mm (.3 ).15mm (.6 ) Thick Moly Tab RF Ground Plane Wire Bond.254mm (.1 ) Thick Alumina Thin Film Substrate Figure 2. - 9 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 781-329-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D

Notes: v2.917 ATTENUATOR, 2-5 GHz For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 781-329-47 Order online at www.analog.com Application Support: Phone: 1-8-ANALOG-D - 1