UNISONIC TECHNOLOGIES CO., LTD 2V, 9A N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES TO-22 TO-22F TO-22F TO-22F2 * R DS(ON) <.4Ω@ V GS = V, I D = 5.A * Ultra Low Gate Charge ( typical 9 nc ) * Low Reverse Transfer Capacitance ( C RSS = typical 8 pf ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability TO-262 TO-263 SYMBOL TO-25 TO-252 ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free 2 3 4 5 6 7 8 Packing UF63L-TA3-T UF63G-TA3-T TO-22 G D S - - - - - Tube UF63L-TF-T UF63G-TF-T TO-22F G D S - - - - - Tube UF63L-TF2-T UF63G-TF2-T TO-22F2 G D S - - - - - Tube UF63L-TF3-T UF63G-TF3-T TO-22F G D S - - - - - Tube UF63L-TM3-T UF63G-TM3-T TO-25 G D S - - - - - Tube UF63L-TN3-R UF63G-TN3-R TO-252 G D S - - - - - Tape Reel UF63L-T2Q-T UF63G-T2Q-T TO-262 G D S - - - - - Tube UF63L-TQ2-T UF63G-TQ2-T TO-263 G D S - - - - - Tube UF63L-TQ2-R UF63G-TQ2-R TO-263 G D S - - - - - Tape Reel UF63L-S8-R UF63G-S8-R S S S G D D D D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source of 8 Copyright 28 Unisonic Technologies Co., Ltd
MARKING TO-22 / TO-22F / TO-22F TO-22F2 / TO-252 / TO-262 / TO-263 UNISONIC TECHNOLOGIES CO., LTD 2 of 8
ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 2 V Drain-Gate Voltage (R GS = 2kΩ, T J =25 C ~25 C) V DGR 2 V Gate-Source Voltage V GSS ±2 V Continuous Drain Current I D 9 A Pulsed Drain Current (Note 2) I DM 36 A Single Pulse Avalanche Energy (Note 3) E AS 5 mj TO-22/TO-262 TO-263 73 Power Dissipation TO-22F/ TO-22F 38 P D TO-22F2 42 W TO-25/ TO-252 46 2.5 Junction Temperature T J +5 C Storage Temperature T STG -55 ~ +5 C Notes:. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by T J. 3. L = 4mH, I AS = 8.3A, V DD = 2V, R G = 25 Ω, Starting T J = 25 C THERMAL DATA PARAMETER SYMBOL RATING UNIT TO-22/TO-22F TO-22F/TO-22F2 62.5 Junction to Ambient TO-262/TO-263 θ JA C/W TO-25/ TO-252.3 83 TO-22/TO-262 TO-263.7 Junction to Case TO-22F/ TO-22F 3.3 θ JC TO-22F2 2.98 C/W TO-25/ TO-252 2.7 5 UNISONIC TECHNOLOGIES CO., LTD 3 of 8
ELECTRICAL SPECIFICATIONS (T C =25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = V, I D = 25μA 2 V On-State Drain Current (Note ) I D(ON) V DS > I D(ON) x R DS(ON)MAX, V GS = V 9 A Drain-Source Leakage Current I DSS V DS = Rated BV DSS, V GS = V μa Gate-Source Leakage Current Forward V GS = 2V, V DS = V na I GSS Reverse V GS = -2V, V DS = V - na ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V GS = V DS, I D = 25μA 2 4 V Static Drain-Source On-State Resistance R DS(ON) V GS = V, I D = 5A.25.4 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 6 pf V DS = 25V, V GS = V, Output Capacitance C OSS 25 pf f =.MHz Reverse Transfer Capacitance C RSS 8 pf SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 3 ns V DD = 9V, I D 9A, R GS = 9.Ω, Turn-On Rise Time t R 5 ns V GS = V, R L = 9.6Ω Turn-Off Delay Time t D(OFF) 5 ns (Note, 2) Turn-Off Fall Time t F 4 ns Total Gate Charge Q G V GS = V, I D = 9A, 9 3 nc Gate-Source Charge Q GS V DS =.8 x Rated BV DSS nc Gate-Drain Charge Q GD I G(REF) =.5mA 9 nc DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS =V, I S = 9.A 2 V Maximum Continuous Drain-Source Diode Forward Current I S 9 A Maximum Pulsed Drain-Source Diode Forward Current I SM 36 A Reverse Recovery Time t rr I S = 9.A, di S /dt = A/μs 45 ns Reverse Recovery Charge Q rr (Note ) 3 μc Notes:. Pulse Test: Pulse width 3μs, Duty cycle 2%. Notes: 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD 4 of 8
TEST CIRCUITS AND WAVEFORMS V DS L BV DSS VDS R G V DD IAS VDD D.U.T..Ω t p tav I AS Fig. Unclamped Energy Test Circuit Fig.2 Unclamped Energy Waveforms R L V DS 9% VGS R G D.U.T. V DD V GS % 5% % PULSE WIDTH 9% 5% t D(ON) t R t D(OFF) t F t ON t OFF Fig.3 Switching Time Test Circuit Fig.4 Resistive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD 5 of 8
TYPICAL CHARACTERISTICS Power Dissipation, PD Normalized Transient Thermal Impedance Forward Bias Safe Operating Area Normalized Transient Thermal Impedance, ZθJC..5.2...5.2. P DM Single pulse Duty Factor, D=t/t2 Peak T J =P DM Z θjc R θjc +T C. -5-4 -3-2 - t t2 Operation in This Area May be Limited by R DS (ON) T C =25 T J =Max Rated. μs μs ms ms ms DC Rectangular Pulse Duration, t (s) Drain to Source Voltage, V DS (V) UNISONIC TECHNOLOGIES CO., LTD 6 of 8
TYPICAL CHARACTERISTICS (Cont.) Source to Drain Current, ISD (A) Gate to Source Voltage, VGS (V) Normalized Drain to Source on Resistance Normalized Drain to Source Breakdown Voltage Drain to Source on Resistance, RDS (ON) UNISONIC TECHNOLOGIES CO., LTD 7 of 8
TYPICAL CHARACTERISTICS (Cont.) 2 6 Capacitance vs. Drain to Source Voltage V GS = V, f = MHz C ISS = C GS + C GD, C DS C RSS = C GD C OSS = C DS + C GD 4 35 3 Drain Current vs. Source to Drain Voltage 2 25 2 8 C ISS 5 4 C OSS C RSS 2 3 4 5 5.5.5 2 2.5 3 Drain to Source Voltage, V DS (V) Source to Drain Voltage, V SD (V) Drain Current, ID (μa) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD 8 of 8