U20DL2C53A U20DL2C53A. Switching Mode Power Supply Application Converter and Chopper Application. Absolute Maximum Ratings (Ta = 25 C) Polarity

Similar documents
5DL2CZ47A, 5FL2CZ47A, 5GL2CZ47A

TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE U2FWJ44M CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT

TOSHIBA Fast Recovery Diode Silicon Diffused Type CMF01

GT30J322 GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS. MAXIMUM RATINGS (Ta = 25 C) EQUIVALENT CIRCUIT MARKING

TOSHIBA Schottky Barrier Diode CMS14

TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CRS08

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301

GT50J301 GT50J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS. MAXIMUM RATINGS (Ta = 25 C) EQUIVALENT CIRCUIT

TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS05

GT60M323 GT60M323. Voltage Resonance Inverter Switching Application Unit: mm. Maximum Ratings (Ta = 25 C) Thermal Characteristics. Equivalent Circuit

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322

TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CRS03

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324

TOSHIBA Schottky Barrier Diode CRS12

TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS (Ta = 34 C) 2.0 (Tl = 119 C) JEDEC Storage temperature T stg 40~150 C

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930

TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CRS (50 Hz) 22 (60 Hz)

TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS04. Junction temperature T j 40~125 C JEITA

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145

TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS (Note 1)

TOSHIBA Schottky Barrier Diode CMS14

TOSHIBA Fast Recovery Diode Silicon Diffused Type CMF (50 Hz) (Note 2)

2SD1508 2SD1508. Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications. Maximum Ratings (Ta = 25 C)

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612

GT50J325 GT50J325. High Power Switching Applications Fast Switching Applications. Maximum Ratings (Ta = 25 C) Thermal Characteristics

TOSHIBA Transistor Silicon PNP Epitaxial Type TPC

2SA2066 2SA2066. High-Speed Switching Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1508

2SD2638 2SD2638. Horizontal Deflection Output for Color TV, Digital TV High Speed Switching Applications. Maximum Ratings (Tc = 25 C)

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886

2SC2873 2SC2873. Power Amplifier Applications Power Switching Applications. Maximum Ratings (Ta = 25 C)

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145. JEDEC TO-92MOD Storage temperature range T stg 55 to 150 C

2SC3657 2SC3657. Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications. Maximum Ratings (Tc = 25 C)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406. JEDEC Storage temperature range T stg 55 to 150 C

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655

TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power) 2SD

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U MOS III) 2SJ669

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3265

查询 D2553 供应商 2SD2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2553. DC I C 8 A Pulse I CP 16

2SK363 2SK363. For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications. Maximum Ratings (Ta = 25 C)

2SC5353 2SC5353. Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications. Maximum Ratings (Tc = 25 C)

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858

2SC5784 2SC5784. High-Speed Switching Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C)

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370. V DS = 10 V, V GS = 0, f = 1 khz, I DSS = 3 ma

TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8701. Characteristics Symbol Rating Unit

GT8G133 GT8G133. Strobe Flash Applications. Absolute Maximum Ratings (Ta = 25 C) Circuit Configuration. Thermal Characteristics.

2SC6033 2SC6033. High-Speed Swtching Applications DC-DC Converter Applications Storobe Flash Applications. Maximum Ratings (Ta = 25 C)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3078A

TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901. Rating Unit C/W

2SC1923 2SC1923. High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications. Maximum Ratings (Ta 25 C)

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123

2SK882 2SK882. FM Tuner, VHF RF Amplifier Applications. Maximum Ratings (Ta 25 C) Electrical Characteristics (Ta 25 C)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2750

TPCP8J01 8J01 TPCP8J01. Notebook PC Applications Portable Equipment Applications. Absolute Maximum Ratings (Ta = 25 C) MOSFET. Circuit Configuration

MG400V2YS60A MG400V2YS60A. High Power Switching Applications Motor Control Applications. Equivalent Circuit

2SJ401 2SJ401. DC DC Converter, Relay Drive and Motor Drive Applications. Maximum Ratings (Ta = 25 C) Thermal Characteristics

TA78L05F, TA78L06F, TA78L07F, TA78L08F, TA78L09F, TA78L10F, TA78L12F, TA78L15F, TA78L18F, TA78L20F, TA78L24F

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSII.5 ) 2SK1120. DC (Note 1) I D 8 A Pulse (Note 1) I DP 24

TOSHIBA Infrared LED GaAs Infrared Emitter TLN108(F)

TC4584BP,TC4584BF,TC4584BFN

TC4011BP,TC4011BF,TC4011BFN,TC4011BFT

TOSHIBA Photocoupler Photorelay TLP222G, TLP222G-2

TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD2005F

TLP3616. Tentative TLP3616. Triac Drivers Programmable Controllers AC-Output Modules Solid-State Relays. Pin Configuration (top view)

TC7WH04FU,TC7WH04FK TC7WH04FU/FK. Triple Inverter. Features. Marking. Pin Assignment (top view)

TOSHIBA RF POWER AMPLIFIER MODULE S-AV40 FM RF POWER AMPLIFIER MODULE FOR 30W COMMERCIAL VHF RADIO APPLICATIONS

TC74AC14P,TC74AC14F,TC74AC14FN,TC74AC14FT

TC74AC05P,TC74AC05F,TC74AC05FN

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K7002FU

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA48015F. 1.5 V Three-Terminal Low Dropout Voltage Regulator with Output Current of 1 A

TC74LCX07F,TC74LCX07FN,TC74LCX07FT,TC74LCX07FK

TC74AC00P,TC74AC00F,TC74AC00FN,TC74AC00FT

ULN2003AP,ULN2003AFW,ULN2004AP,ULN2004AFW (Manufactured by Toshiba Malaysia)

TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD2007F

TC74VHC14F,TC74VHC14FN,TC74VHC14FT,TC74VHC14FK

TC74ACT139P,TC74ACT139F,TC74ACT139FN,TC74ACT139FT

TC74AC367P,TC74AC367F,TC74AC367FN,TC74AC367FT

TC74ACT74P,TC74ACT74F,TC74ACT74FN,TC74ACT74FT

TLP620, TLP620 2, TLP620 4

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol V RRM I F(DC) I FP. I 2 t. T j T stg TOR

ULN2803AP,ULN2803AFW,ULN2804AP,ULN2804AFW (Manufactured by Toshiba Malaysia)

TC74HC4066AP,TC74HC4066AF,TC74HC4066AFN,TC74HC4066AFT

TC74ACT540P,TC74ACT540F,TC74ACT540FW,TC74ACT540FT TC74ACT541P,TC74ACT541F,TC74ACT541FW,TC74ACT541FT

TC74HC540AP,TC74HC540AF,TC74HC540AFW TC74HC541AP,TC74HC541AF,TC74HC541AFW

TOSHIBA BiCD Digital Integrated Circuit Silicon Monolithic TB62752AFUG GND

TLP181 TLP181. Office Machine Programmable Controllers AC / DC Input Module Telecommunication. Pin Configuration (top view)

TC74HC240AP,TC74HC240AF,TC74HC240AFW TC74HC241AP,TC74HC241AF TC74HC244AP,TC74HC244AF,TC74HC244AFW

TLP627,TLP627-2,TLP627-4

TC74VHC32F,TC74VHC32FN,TC74VHC32FT,TC74VHC32FK

TLP172A TLP172A. Telecommunications Control Equipment Data Acquisition System Security Equipment Measurement Equipment. Pin Configuration (top view)

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321. DC I C 40 A 1ms I CP 80. DC I F 30 A 1ms I FP 80

TLP631,TLP632 TLP631,TLP632. Programmable Controllers AC / DC Input Module Solid State Relay. Pin Configurations (top view)

TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62771AP

Transcription:

TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type U2DL2C53A U2DL2C53A Switching Mode Power Supply Application Converter and Chopper Application Unit: mm Repetitive peak reverse voltage: VRRM = 2 V Average output recified current: IO = 2 A Ultra fast reverse-recovery time: trr = 35 ns (max) Low switching losses and output noise. Power surface-mount device for thin flat package: TFP (Toshiba package name) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage V RRM 2 V Average output recified current I O 2 A Peak one cycle surge forward current (non-repetitive, sine wave) I FSM (5 Hz) (6 Hz) Junction temperature T j 4 to 5 C Storage temperature range T stg 4 to 5 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions /Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). A JEDEC JEITA TOSHIBA 2-9BA Weight:.74 g (typ.) Polarity 3K *A 2A2 *: Common Terminal

Electrical Characteristics (Ta = 25 C) Characteristics Symbol Test Condition Min Typ. Max Unit Peak forward voltage V FM I FM = A.98 V Repetitive peak reverse current I RRM V RRM = 2 V 5 µa Reverse recovery time t rr I F = 2 A, di/dt = 5 A/µs 35 ns Thermal resistance R th (j-c) Total DC, Junction to Case.5 C/W Note: V FM, I RRM, t rr : A value applied to one cell. Marking 2DL2C Part No. (or abbreviation code) Lot No. Abbreviation Code 2DL2C Part No. U2DL2C53A Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. Standard Soldering Pad 8. unit: mm 2.5 2. 2. 2. 6. 3.2 3.8 2

Handling Precaution The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend when you design a circuit with a device. VRRM: We recommend that the worst case voltage, including surge voltage, be no greater than 8% of the absolute maximum rating of VRRM for a DC circuit and be no greater than 5% of that of VRRM for an AC circuit. VRRM has a temperature coefficient of.%/ C. Take this temperature coefficient into account designing a device at low temperature. IO: We recommend that the worst case current be no greater than 8% of the absolute maximum rating of IO. Carry out adequate heat design. If you can t design a circuit with excellent heat radiation, set the margin by using an allowable Tamax-IO curve. This rating specifies the non-repetitive peak current in one cycle of a 5-Hz sine wave, condition angle 8. Therefore, this is only applied for an abnormal operation, which seldom occurs during the lifespan of the device. We recommend that a device be used at a Tj of below 2 C under the worst load and heat radiation conditions. Please refer to the Rectifiers databook for further information. 3

i F v F 24 P F (AV) I o Instantaneous forward current if (A)..2 C Tj = 5 C 25 C 75 C.4.6.8..2.4.6.8 Average forward power dissipation PF (AV) (W) 2 6 2 8 4 α = 3 6 9 sin 2 Rectangular waveform (one cell) 4 8 2 6 2 24 α 36 Conduction angle α 8 Instantaneous forward voltage vf (V) Average output rectified current I o (A) Maximum allowable case temperature Tc max ( C) 6 4 2 8 6 Rectangular waveform (one cell) α = 3 Tc max I o 4 α 36 2 Conduction angle α 4 8 2 6 9 2 6 8 sin 2 24 Peak surge forward current IFSM (A) 2 8 6 4 2 Surge forward current (non-repetitive) 5 Hz 6 Hz One c ell Single phase full Sine wave T 25 C Average output rectified current I o (A) Number of cycles C j V R Transient thermal impedance rth (j-c) ( C/W) 5 3.5.3 r th (j-c) t Junction capacitance Cj (V) f = MHz Ta = 25 C.... Time t (s) Reverse voltage V R (V) 4

RESTRICTIONS ON PRODUCT USE The information contained herein is subject to change without notice. 369EAA The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5