UNISONIC TECHNOLOGIES CO., LTD UF8.A, V,.Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * R DS(ON) <.Ω @ V GS =V * Single Pulse Avalanche Energy Rated * Rugged- SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free Packing UF8L-TA-T UF8G-TA-T TO- G D S Tube UF8L-TF-T UF8G-TF-T TO-F G D S Tube UF8L-TF-T UF8G-TF-T TO-F G D S Tube UF8L-TF-T UF8G-TF-T TO-F G D S Tube UF8L-TM-T UF8G-TM-T TO- G D S Tube UF8L-TMS-T UF8G-TMS-T TO-S G D S Tube UF8L-TN-R UF8G-TN-R TO- G D S Tape Reel UF8L-TQ-T UF8G-TQ-T TO-6 G D S Tube UF8L-TQ-R UF8G-TQ-R TO-6 G D S Tape Reel UF8L-TQ-T UF8G-TQ-T TO-6 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source of 9 Copyright Unisonic Technologies Co., Ltd QW-R-6.I
UF8 MARKING UNISONIC TECHNOLOGIES CO., LTD of 9 QW-R-6.I
UF8 ABSOLUTE MAXIMUM RATINGS (T A = C, Unless Otherwise Specified.) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (T J = C ~ C) V DS V Drain to Gate Voltage (R GS =kω, T J = C ~ C) V DGR V Gate to Source Voltage V GS ± V Drain Current Continuous I D. A Pulsed I DM 8 A TO-/TO-6/TO-6 7 W Power Dissipation (T C = C) TO-F/ TO-F 8 W TO-F P D TO-/TO-S 6 W TO- Single Pulse Avalanche Energy Rating (Note ) E AS mj Junction Temperature T J + C Storage Temperature T STG - ~ + C Notes:. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.. V DD =V, starting T J = C, L=mH, R G =Ω, peak I AS =.A THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-/TO-6/TO-6 6. C/W TO-F/ TO-F 6. C/W Junction to Ambient TO-F θ JA 6. TO-/TO-S TO-. C/W TO-/TO-6/TO-6.7 C/W TO-F/ TO-F. C/W Junction to Case TO-F θ Jc. TO-/TO-S TO-.7 C/W ELECTRICAL SPECIFICATIONS (T A = C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Drain-Source Breakdown Voltage BV DSS I D =μa, V GS =V V Gate Threshold Voltage V GS(TH) V GS =V DS, I D =μa.. V On-State Drain Current (Note ) I D(ON) V DS >I D(ON) R DS(ON)MAX, V GS =V. A V DS = Rated BV DSS, V GS =V μa Drain-Source Leakage Current I DSS V DS =.8 Rated BV DSS V GS =V, T J = C μa Gate-Source Leakage Current I GSS V GS =±V ± na Static Drain-Source On-State Resistance R DS(ON) I D =.A, V GS =V (Note ).. Ω Forward Transconductance (Note ) g FS V DS V, I D =.7A.. S Turn-On Delay Time t D(ON) 7 ns Turn-On Rise Time t R V DD =V, I D.A ns Turn-Off Delay Time t D(OFF) R GS =Ω, R L =Ω (Note ) ns Turn-Off Fall Time t F 6 ns Notes:. Pulse Test: Pulse width μs, Duty Cycle %.. MOSFET Switching Times are Essentially Independent of Operating Temperature.. Gate Charge is Essentially Independent of Operating Temperature. UNISONIC TECHNOLOGIES CO., LTD of 9 QW-R-6.I
UF8 ELECTRICAL SPECIFICATIONS(Cont.) (T A = C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Total Gate Charge Q G V GS =V, I D =.A nc Gate-Source Charge Q GS V DS =.8 Rated BV DSS. nc Gate-Drain Charge Q GD I G(REF) =.ma (Note ) nc Input Capacitance C ISS 6 pf Output Capacitance C OSS V DS =V, V GS =V, f=.mhz pf Reverse Transfer Capacitance C RSS pf Notes:. Pulse Test: Pulse width μs, Duty Cycle %.. MOSFET Switching Times are Essentially Independent of Operating Temperature.. Gate Charge is Essentially Independent of Operating Temperature. INTERNAL PACKAGE INDUCTANCE PARAMETER SYMBOL MIN TYP MAX UNIT Internal Drain Inductance Measured from the contact screw on tab to center of die. nh L D Measured from the drain lead(6mm from package) to center of die. nh Internal Source Inductance Measured from the source lead(6mm from header) to source bond pad L S 7. nh Remark: Modified MOSFET symbol showing the internal devices inductances as below. SOURCE TO DRAIN DIODE SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Source to Drain Diode Voltage V SD T J = C,I SD =.A, V GS =V(Note ).6 V Continuous Source to Drain Current I SD. A Note Pulse Source to Drain Current I SDM 8 A Reverse Recovery Time t rr T J = C, I SD =.A, di/dt=a/μs 8 76 ns Reverse Recovery Charge Q RR T J = C, I SD =.A, di/dt=a/μs.96.. μc Notes:. Pulse Test: Pulse width μs, Duty Cycle %.. Modified MOSFET symbol showing the integral reverse P-N junction diode as below. UNISONIC TECHNOLOGIES CO., LTD of 9 QW-R-6.I
UF8 TEST CIRCUITS AND WAVEFORMS V DS L Vary t P to Obtain Required Peak I AS V GS R G DUT + - V DD V t p I AS.Ω Unclamped Energy Test Circuit Unclamped Energy Waveforms R L R G DUT + - V DD V GS Switching Time Test Circuit UNISONIC TECHNOLOGIES CO., LTD of 9 QW-R-6.I
UF8 TEST CIRCUITS AND WAVEFORMS (Cont.) t ON t OFF t DLY(ON) t DLY(OFF) V DS 9% t R t F 9% % % 9% V GS % % PULSE WIDTH % Resistive Switching Waveforms Gate Charge Test Circuit Gate Charge Waveforms UNISONIC TECHNOLOGIES CO., LTD 6 of 9 QW-R-6.I
UF8 TYPICAL CHARACTERISTICS. Normalized Power Dissipation vs. Case Temperature Maximum Contionuous Drain Current vs. Case Temperature..8.6.. Case Temperature, T C ( C) 7 Case Temperature,T C ( C) Normalized Maximum Transient Thermal Impedance Forward Bias Safe Operating Area Operation in This Region is Limited by r DS (on)..... P DM. t. t Single pulse *Notes: Duty Factor, D=t/t. Peak T J =P DM Z θjc R θjc +T C - - - - - Rectangular Pulse Duration, t (s). ms ms DC μs μs ms T C = C T J =Max Rated Single Pulse Drain to Source Voltage, V DS (V) 6 V GS =V Output Characteristics V GS =.V Pulse Duration=8μs Duty Cycle =.% Max Saturation Characteristics V GS =V V GS =.V V GS =.V Pulse Duration=8μs Duty Cycle =.% Max V GS =.V V GS =.V V GS =.V V GS =.V Drain to Source Voltage, V DS (V) V GS =.V 6 8 Drain to Source Voltage, V DS (V) UNISONIC TECHNOLOGIES CO., LTD 7 of 9 QW-R-6.I
UF8 TYPICAL CHARACTERISTICS (Cont.) Drain to Source Current, IDS (ON) (A) Pulse Duration=8μs Duty Cycle =.% Max V DS >I D(ON) r DS(ON)MAX Transfer Characteristics T J = C T J = C T J = - C 6 7 Gate to Source Voltage, V GS (V) Drain to Source on Resistance, rds (ON) (Ω) Drain to Source on Resistance vs. Gate Voltage and Drain Current Pulse Duration=8μs Duty Cycle =.% Max 8 6 V GS =V 8 6 Case Temperature, T C ( C) V GS =V Normalized Drain to Source on Resistance..8...6 Normalized Drain to Source on Resistance vs. Junction Temperature Pulse Duration=8μs Duty Cycle =.% Max V GS =V, I D =.A. -6 - - 6 8 Junction Temperature, T J ( C) Normalized Drain to Source Breakdown Voltage....9.8 Normalized Drain to Source Breakdown Voltage vs. Junction Temperature I D =μa.7 - - 6 8 Junction Temperature, T J ( C) 6 Capacitance, C (pf) 6 8 Capacitance vs. Drain to Source Voltage V GS =V, f=mhz C ISS =C GS +C GD C RSS =C GD C OSS =C DS +C GS C ISS C OSS Transconductance, gfs (S) Transconductance vs. Drain Current Pulse Duration=8μs Duty Cycle =.% Max T J = - C T J = C T J = C C RSS Drain to Source Voltage, V DS (V) Drain Current, I D (A) UNISONIC TECHNOLOGIES CO., LTD 8 of 9 QW-R-6.I
UF8 TYPICAL CHARACTERISTICS (Cont.) Source to Drain Current, ISD (A) T J = C Source to Drain Diode Voltage Pulse Duration=8μs Duty Cycle =.% Max T J = C Gate to Source Voltage, VGS (V) Gate to Source Voltage vs. Gate Charge I D =.A V DS =V V DS =V V DS =V Source to Drain Voltage, V SD (V) 8 6 Gate Charge, Q G (nc) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 9 of 9 QW-R-6.I