N-Channel Enhancement Mode MOSFET Features Pin Description 25V/6, R DS(ON) =4.5mΩ (typ.) @ V GS =V R DS(ON) =7.5mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) G D S Top View of TO-252 D pplications Power Management in Desktop Computer or DC/DC Converters G S N-Channel MOSFET Ordering and Marking Information PM2556N ssembly Material Handling Code Temperature Range Package Code Package Code U : TO-252 Operating Junction Temperature Range C : -55 to 5 C Handling Code TR : Tape & Reel ssembly Material L : Lead Free Device G : Halogen and Lead Free Device PM2556N U : PM2556N XXXXX XXXXX - Date Code Note: NPEC lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. NPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-2C for MSL classification at lead-free peak reflow temperature. NPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 5ppm by weight). NPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
bsolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T =25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 25 V GSS Gate-Source Voltage ±2 V T J Maximum Junction Temperature 5 C T STG Storage Temperature Range -55 to 5 C I S Diode Continuous Forward Current 4 I DP I D P D 3µs Pulse Drain Current Tested T C =25 C 6 T C = C 9 Continuous Drain Current T C =25 C 6* T C = C 48 Maximum Power Dissipation T C =25 C 5 T C = C 2 W R θjc Thermal Resistance-Junction to Case 2.5 C/W R θj Thermal Resistance-Junction to mbient 5 C/W E S Drain-Source valanche Energy, L=.5mH 225 mj Notes: * Current limited by bond wire. Electrical Characteristics (T = 25 C) Symbol Parameter Test Conditions PM2556NU Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =25µ 25 V I DSS Zero Gate Voltage Drain Current V DS =2V, V GS =V T J =85 C 3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =25µ.3.8 2.5 V I GSS Gate Leakage Current V GS =±2V, V DS =V ± n R DS(ON) a Drain-Source On-state Resistance V GS =V, I DS =4 4.5 5.7 V GS =4.5V, I DS =2 7.5 Diode Characteristics V SD a Diode Forward Voltage I SD =4, V GS =V.7. V t rr Reverse Recovery Time 28 ns I DS =4, dl SD /dt=/µs Reverse Recovery Charge 4 nc Q rr µ mω 2
Electrical Characteristics (Cont.) (T = 25 C) Symbol Parameter Test Conditions Gate Charge Characteristics b PM2556NU Min. Typ. Max. Q g Total Gate Charge 25 35 Q gs Gate-Source Charge V DS =5V, V GS =4.5V, I DS =4 6 Gate-Drain Charge 6 Q gd Dynamic Characteristics b R G Gate Resistance V GS =V,V DS =V, F=MHz.5.3 2.6 Ω C iss Input Capacitance V GS =V, 223 29 C oss Output Capacitance V DS =5V, 485 Reverse Transfer Capacitance Frequency=.MHz 435 C rss t d(on) Turn-on Delay Time 6 3 t r Turn-on Rise Time V DD =5V, R L =5Ω, 8 33 I DS =, V GEN =V, t d(off) Turn-off Delay Time R G =6Ω 58 5 Turn-off Fall Time 32 59 t f Notes: a : Pulse test ; pulse width 3µs, duty cycle 2%. b : Guaranteed by design, not subject to production testing. Unit nc pf ns 3
Typical Characteristics Power Dissipation Drain Current 6 7 5 6 Ptot - Power (W) 4 3 2 ID - Drain Current () 5 4 3 2 T C =25 o C 2 4 6 8 2 4 6 8 T C =25 o C,V G =V 2 4 6 8 2 4 6 Tj - Junction Temperature ( C) Tj - Junction Temperature ( C) Safe Operation rea Thermal Transient Impedance 4 2 ID - Drain Current () Rds(on) Limit ms ms ms s DC Normalized Effective Transient....5.2. Single Pulse.2 Duty =.5 T. C =25 O C.. VDS - Drain - Source Voltage (V) Mounted on in 2 pad R θj :5 o C/W E-3 E-4 E-3.. Square Wave Pulse Duration (sec) 4
Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance ID - Drain Current () 6 4 2 8 6 4 2 V GS = 5,5.5,6,7,8,9,V 4.5V 4V 3.5V 3V RDS(ON) - On - Resistance (mω) 3 2 9 8 7 6 5 4 3 2 V GS =4.5V V GS =V..5..5 2. 2.5 3. VDS - Drain-Source Voltage (V) 2 4 6 8 2 4 6 ID - Drain Current () Drain-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (mω) 8 6 4 2 8 6 4 2 I D =4 Normalized Threshold Vlotage.6.4.2..8.6.4 I DS =25µ 2 3 4 5 6 7 8 9 VGS - Gate - Source Voltage (V).2-5 -25 25 5 75 25 5 Tj - Junction Temperature ( C) 5
Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2..8 V GS = V I DS = 4 6 Normalized On Resistance.6.4.2..8.6.4 IS - Source Current () T j =5 o C T j =25 o C.2 R ON @T j =25 o C: 4.5mΩ. -5-25 25 5 75 25 5.5..2.4.6.8..2.4.6 Tj - Junction Temperature ( C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge 4 35 Frequency=MHz 9 V DS = 5V I D = 4 C - Capacitance (pf) 3 25 2 5 5 Crss Coss Ciss VGS - Gate-source Voltage (V) 8 7 6 5 4 3 2 5 5 2 25 VDS - Drain - Source Voltage (V) 2 3 4 5 QG - Gate Charge (nc) 6
valanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS IS RG VDD VDD tp IL.W ES tv valanche Test Circuit and Waveforms VDS RD DUT VDS 9% RG VGS VDD tp % VGS td(on) tr td(off) tf 7
Package Information TO-252 E b3 c2 E GUGE PLNE L L4 D L3 H D b e c SEE VIEW SETING PLNE.25 VIEW S Y M MILLIMETERS B O L MIN. MX. b3 c c2 D D E 2.39.3 b.5.89 E e H L L3 2.8 4.95 5.46.46.6.46.89 5.33 4.57 6.35 6.73 3.8 9.4.9 2.29 BSC 6.22 6. 6..78 L4.2 TO-252 MIN..86 INCHES.9 BSC MX..94.2.35.95.25.8.24.8.2.8.4.37.5.35.245.25.265.5.35.4.7.89 2.3.35.8.4 8 8 Note : Follow JEDEC TO-252..236.236 8
Carrier Tape & Reel Dimensions OD P P2 P H E OD B T B W F K B SECTION - SECTION B-B d T pplication H T C d D W E F 33. 2. 5 MIN. 6.4+2. -. 3.+.5 -.2.5 MIN. 2.2 MIN. 6..3.75. 7.5.5 TO-252 P P P2 D D T B K 4.. 8.. 2..5.5+. -..5 MIN..6+. -.4 6.8.2.4.2 2.5.2 (mm) Devices Per Unit Package Type Unit Quantity TO-252 Tape & Reel 25 9
Reflow Condition (IR/Convection or VPR Reflow) T P Ramp-up tp Critical Zone T L to T P Temperature T L Tsmax Tsmin ts Preheat t L Ramp-down 25 t 25 C to Peak Reliability Test Program Time Test item Method Description SOLDERBILITY MIL-STD-883D-23 245 C, 5 SEC HOLT MIL-STD-883D-5.7 Hrs Bias @25 C PCT JESD-22-B,2 68 Hrs, %RH, 2 C TST MIL-STD-883D-.9-65 C~5 C, 2 Cycles Classification Reflow Profiles Profile Feature Sn-Pb Eutectic ssembly Pb-Free ssembly verage ramp-up rate (T L to T P ) 3 C/second max. 3 C/second max. Preheat C 5 C - Temperature Min (Tsmin) - Temperature Max (Tsmax) 5 C 2 C 6-2 seconds 6-8 seconds - Time (min to max) (ts) Time maintained above: - Temperature (T L ) - Time (t L ) 83 C 6-5 seconds 27 C 6-5 seconds Peak/Classification Temperature (Tp) See table See table 2 Time within 5 C of actual Peak Temperature (tp) -3 seconds 2-4 seconds Ramp-down Rate 6 C/second max. 6 C/second max. Time 25 C to Peak Temperature 6 minutes max. 8 minutes max. Note: ll temperatures refer to topside of the package. Measured on the body surface.
Classification Reflow Profiles (Con.) Table. SnPb Eutectic Process Package Peak Reflow Temperatures Package Thickness Volume mm 3 <35 Volume mm 3 35 <2.5 mm 24 +/-5 C 225 +/-5 C 2.5 mm 225 +/-5 C 225 +/-5 C Table 2. Pb-free Process Package Classification Reflow Temperatures Package Thickness Volume mm 3 <35 Volume mm 3 35-2 Volume mm 3 >2 <.6 mm 26 + C* 26 + C* 26 + C*.6 mm 2.5 mm 26 + C* 25 + C* 245 + C* 2.5 mm 25 + C* 245 + C* 245 + C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature + C. For example 26 C+ C) at the rated MSL level. Customer Service npec Electronics Corp. Head Office : No.6, Dusing st Road, SBIP, Hsin-Chu, Taiwan Tel : 886-3-5642 Fax : 886-3-56425 Taipei Branch : 2F, No., Lane 28, Sec 2 Jhongsing Rd., Sindian City, Taipei County 2346, Taiwan Tel : 886-2-29-3838 Fax : 886-2-297-3838