REFLECTIONLESS FILTER DICE

Similar documents
REFLECTIONLESS FILTER DICE

Band Pass Filter Die. XBF-D-Series. Reflectionless to 20.5 GHz

REFLECTIONLESS FILTERS DICE DC to 26 GHz

Monolithic Amplifier Die

Fixed Attenuator Die YAT-D-SERIES. The Big Deal Excellent power handling, up to 2W Wideband, DC to 26.5 GHz Usable to 40 GHz

Double Balanced Mixer Die

Monolithic Amplifier Die

Monolithic Amplifier Die 5 to 22 GHz

Monolithic Amplifier Die

Monolithic Amplifier Die

Simplified Schematic and Pad description DRAIN GATE SOURCE. Description

Monolithic Amplifier Die 5 to 22 GHz

REFLECTIONLESS FILTERS

REFLECTIONLESS FILTERS

REFLECTIONLESS FILTERS

REFLECTIONLESS FILTERS

REFLECTIONLESS FILTERS

REFLECTIONLESS FILTERS

REFLECTIONLESS FILTERS

REFLECTIONLESS FILTERS

Gain Equalizers EQY-SERIES. Microwave. The Big Deal

SPDT RF Switch RF Switch with internal driver Single Supply Voltage, +2.3V to +5.5V

Useful in wideband systems or in in several narrowband systems. Reducing inventory. Extremely High Reliability improving overall system reliability

Monolithic Amplifier MNA-5A+ High Directivity. 0.5 to 2.5 GHz

Monolithic Amplifier MNA-6W+ High Directivity. 0.5 to 5.5 GHz

Useful in wideband systems or in in several narrowband systems. Reducing inventory

Monolithic Amplifier MNA-2A+ High Directivity. 0.5 to 2.5 GHz

SPDT RF Switch JSW2-63VHDRP+

SP4T RF Switch HSWA4-63DR+

SPDT RF Switch MSWA2-50+ Fast Switching - MMIC. The Big Deal

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX in a single amplifier.

Monolithic Amplifier PMA4-33GLN+ Low Noise, High Gain & IP3. 50Ω 0.7 to 3.0 GHz. The Big Deal

Digital Controlled Variable Gain Amplifier DVGA1-242APP+

Dual Matched MMIC Amplifier

Stop Band Rejection Loss F4 - F db F db 1

DC to 400 MHz (40 db Typ. Isolation up to 20 GHz)

Monolithic Amplifier PHA-13HLN+ Ultra High Dynamic Range. 1MHz to 1 GHz. The Big Deal

No need for external driver, saving PCB space and cost.

Monolithic Amplifier CMA-83LN+ Low Noise, Wideband, High IP3. 50Ω 0.5 to 8.0 GHz

Monolithic Amplifier PMA2-33LN+ Ultra Low Noise, High IP3. 50Ω 0.4 to 3.0 GHz. The Big Deal

No need for external driver, saving PCB space and cost.

Passive MMIC 30GHz Equalizer

Dual Matched MMIC Amplifier

Monolithic Amplifier CMA-84+ Wideband, High Dynamic Range, Ceramic. DC to 7 GHz. The Big Deal

Passive MMIC 26-40GHz Bandpass Filter

Monolithic Amplifier LHA-1H+ Ultra High Dynamic Range to 6 GHz

Monolithic Amplifier CMA-81+ Wideband, High Dynamic Range, Ceramic. DC to 6 GHz. The Big Deal

Monolithic Amplifier CMA-162LN+ Ultra Low Noise, High IP to 1.6 GHz

Monolithic Amplifier CMA-103+ Ultra Linear Low Noise, Ceramic to 4 GHz

Features Excellent VSWR, 1.1:1 passband Small size Temperature stable LTCC construction

Monolithic Amplifier TSS-183A+ Wideband, Microwave, Shutdown. 5 to 18 GHz

High Isolation GaAs MMIC Doubler

Digital Step Attenuator

Digital Controlled Variable Gain Amplifier

Monolithic Amplifier EHA-163L+ Low Current, Wideband, Flat Gain. 50Ω DC to 16 GHz. The Big Deal

Digital Controlled Variable Gain Amplifier

Monolithic Amplifier TSY-13LNB+ Wideband. 50Ω 0.03 to 1 GHz. The Big Deal

14 GHz to 32 GHz, GaAs, MMIC, Double Balanced Mixer HMC292A

Operating Temperature -40 C to +85 C Storage Temperature* -55 C to +100 C RF Power Input** 0.5W at 25 C

VSWR (:1) Frequency (MHz)

Digital Step Attenuator

Digital Step Attenuator

Digital Step Attenuator

Digital Step Attenuator

DC-8.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier

2 Way-0 Power Splitter/Combiner GP2Y+ Typical Performance Data

2 Way-0 Power Splitter/Combiner GP2S1+ Typical Performance Data

Digital Step Attenuator

MMIC 18-42GHz Quadrature Hybrid

Bias Tee 50Ω Wideband 10 MHz to 12 GHz

Monolithic Amplifier PHA-202+ Ultra High Dynamic Range to 2.7 GHz. The Big Deal

Bandpass Filter BPF-E16+ Surface Mount. The Big Deal Low isertion loss (1 db typical) Good VSWR (1.4:1 typical) High rejection Fast roll-off

GaAs MMIC Millimeter Wave Doubler. Description Package Green Status

Digital Step Attenuator

GaAs MMIC Double Balanced Mixer. Description Package Green Status

MMIC 2-18GHz 90 Splitter / Combiner. Green Status. Refer to our website for a list of definitions for terminology presented in this table.

MMIC GHz Quadrature Hybrid

GaAs MMIC Millimeter Wave Doubler. Description Package Green Status

GHz GaAs MMIC Image Reject Mixer

Features. = 25 C, IF = 3 GHz, LO = +16 dbm

RF Instrument Amplifier

Flat Gain Amplifier GHz YSF-232+ Mini-Circuits System In Package

GaAs MMIC High Dynamic Range Mixer. Description Package Green Status

Non-Linear Transmission Line Comb Generator

Features. Parameter Frequency Min. Typ. Max. Units GHz GHz GHz GHz GHz GHz

HMC985A. attenuators - analog - Chip. GaAs MMIC VOLTAGE - VARIABLE ATTENUATOR, GHz. Features. Typical Applications. General Description

MAAP Power Amplifier, 15 W GHz Rev. V1. Features. Functional Schematic. Description. Pin Configuration 2. Ordering Information

20 GHz to 44 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC1040CHIPS

GHz GaAs MMIC Power Amplifier

Features miniature package MCLP 3x3 mm specified to 8000 MHz, useable to MHz excellent VSWR, 1:15:1 typ. (db) Flatness

RF Transformer TCM2-672X+ Surface Mount. 50Ω 1700 to 6700 MHz

Operation of Microwave Precision Fixed Attenuator Dice up to 40 GHz

50 GHz to 95 GHz, GaAs, phemt, MMIC, Wideband Power Amplifier ADPA7001CHIPS

line of sight links satellite communications Electrical Specifications (T AMB =-55 C to 100 C) FREQUENCY IP3 (MHz) (dbm) Conversion Loss (db)

Monolithic Amplifier LEE2-6+ Surface Mount. DC to 7 GHz. The Big Deal

Features. = +25 C, Vdd = 5V

Power Splitter/Combiner

Typical Performance Data

Features wideband coverage, DC to 6000 MHz 2 watt rating rugged unibody construction off-the-shelf availability very low cost

GaAs, phemt, MMIC, Power Amplifier, HMC1126. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION

Transcription:

MMIC REFLECTIONLESS FILTER DICE 50Ω DC to 21 GHz The Big Deal Patented design eliminates in band spurs Pass band cut-off up to 21 GHz Stop band up to 35 GHz Excellent repeatability through IPD* process Unpackaged Die Form X-Series Available in Low Pass, High Pass and Band Pass designs Product Overview Mini-Circuits X-Series reflectionless filters employ a novel filter topology which absorbs and terminates stop band signals internally rather than reflecting them back to the source. This new capability enables unique applications for filter circuits beyond those suited to traditional approaches. Traditional filters are reflective in the stop band, sending signals back to the source at 100% of the power level which interact with neighboring components and often result in intermodulation and other interferences. Reflectionless filters eliminate stop band reflections, allowing them to be paired with sensitive devices and used in applications that otherwise require circuits such as isolators, isolation amplifiers or attenuators. Key Features Easy integration with sensitive reflective components, e.g. mixers, multipliers Enables stable integration of wideband amplifiers Cascadable Excellent power handling in a tiny surface mount device Excellent repeatability of RF performance Excellent stability over temperature Operating Temperature up to 105 C Unpackaged Die form Advantages Reflectionless filters absorb unwanted signals, preventing reflections back to the source. This reduces generation of additional unwanted signals without the need for extra components like attenuators, improving system dynamic range and saving board space. Because reflectionless filters maintain good impedance in the stop band; they can be integrated with high gain, wideband amplifiers without the risk of creating instabilities in these out of band regions. Reflectionless filters can be cascaded in multiple sections to provide sharper and higher attenuation, while also preventing any standing waves that could affect pass band signals. High power handling extends the usability of these filters to the transmit path for inter-stage filtering. Through semiconductor IPD process, X-series filters are inherently repeatable for large volume production. With ±0.3 db variation over temperature ideal for use in wide temperature range applications without the need for additional temperature compensation. Suitable for operation close to high power components Enables direct integration into customer hybrids *IPD Integrated Passive Device, is a GaAs semiconductor process Page 1 of 6

Reflectionless Low Pass Filter Die 50Ω DC to 7000 MHz Features Match to 50Ω in the stop band, eliminates undesired reflections Cascadable Excellent Power handling Protected by US Patent No. 8,392,495 Applications Harmonics Rejection Satellite Radar Military & Space +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications Ordering Information: Refer to Last Page General Description Mini-Circuits reflectionless filter die employs a novel filter topology which absorbs and terminates stop band signals internally rather than reflecting them back to the source. This new capability enables unique applications for filter circuits beyond those suited to traditional approaches. Traditional filters are reflective in the stop band, sending signals back to the source at 100% of the power level. These reflections interact with neighboring components and often result in inter-modulation and other interferences. Reflectionless filters eliminate stop band reflections, allowing them to be paired with sensitive devices and used in applications that otherwise require circuits such as isolation amplifiers or attenuators. Simplified Schematic Pad RF-IN RF-OUT Ground Description RF Input Pad RF Output Pad Ground Bonding Pad REV. A M169478 RS/CP 161222 Page 2 of 6

Electrical Specifications 1 at 25 C Parameter F# Frequency (MHz) Min. Typ. Max. Unit Insertion Loss DC - F1 DC-7000 1.1 db Pass Band Frequency Cut-off F2 9900 3.0 db VSWR DC - F1 DC-7000 1.3 :1 F3 - F5 11700-21300 15 db Rejection Stop Band F3 - F4 11700-18500 1.5 :1 VSWR F4 - F5 18500-21300 2.2 :1 1 Measured on Mini-Circuits Characterization test board. Die packaged in 3mm x 3mm, 12-lead MCLP package and soldered on TB-844-73+ Specification Definition Absolute Maximum Ratings 1,4 Parameter Operating Temperature Ratings -55 C to +105 C RF Power Input, Passband (DC-F1) 2 2W at 25 C RF Power Input, Stopband (F2-F5) 3 100mW at 25 C 2 Passband rating derates linearly to 1W at 105 C ambient 3 Stopband rating derates linearly to 50mW at 105 C ambient 4 Permanent damage may occur if any of these limits are exceeded. INSERTION LOSS (db) DC F1 F2 F3 FREQUENCY (MHz) F4 F5 Frequency (MHz) Typical Performance Data at 25 C 1 Insertion Loss (db) VSWR (:1) 10 0.36 1.04 50 0.32 1.02 100 0.31 1.02 200 0.30 1.04 400 0.29 1.08 800 0.33 1.17 1500 0.41 1.27 2500 0.51 1.31 3500 0.56 1.29 4500 0.68 1.36 5500 0.82 1.43 7000 1.03 1.35 8500 1.57 1.47 9900 3.06 1.59 11700 14.77 1.05 14000 22.17 1.76 16000 18.33 1.65 18500 26.12 1.14 20000 18.98 2.60 21300 17.35 4.06 40 XLF-73+ INSERTION LOSS 5.0 XLF-73+ VSWR INSERTION LOSS (db) 30 20 10 0 0 4260 8520 12780 17040 21300 FREQUENCY (MHz) VSWR 4.0 3.0 2.0 1.0 0 4260 8520 12780 17040 21300 FREQUENCY (MHz) Page 3 of 6

Die Layout Bonding Pad Position (Dimensions in µm, Typical) Fig 1. Die Layout Fig 2. Bonding Pad Positions Critical Dimensions Parameter Values Die Thickness, µm 100 Die Width, µm 1000 Die Length, µm 726 Bond Pad Size (Ground pad), µm 75 x 75 Page 4 of 6

Assembly and Handling Procedure 1. Storage Dice should be stored in a dry nitrogen purged desiccators or equivalent. 2. ESD MMIC Gallium Arsenide (GaAs) filter dice are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta tion. Devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter ESD damage to dice. 3. Die Attach The die mounting surface must be clean and flat. Using conductive silver filled epoxy, recommended epoxies are DieMat DM6030Hk-PT/H579/H579 or Ablestik 84-1LMISR4. Apply sufficient epoxy to meet required epoxy bond line thickness, epoxy fillet height and epoxy coverage around total die periphery. Parts shall be cured in a nitrogen filled atmosphere per manufac turer s cure condition. It is recommended to use antistatic die pick up tools only. 4. Wire Bonding Bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond pads. Thermosonic bonding is used with minimized ultrasonic content. Bond force, time, ultrasonic power and temperature are all critical parameters. Suggested wire is pure gold, 1 mil diameter. Bonds must be made from the bond pads on the die to the package or substrate. All bond wires should be kept as short as low as reasonable to minimize performance degradation due to undesirable series inductance. Assembly Diagram Recommended Wire Length, Typical Wire Wire Length (mm) Wire Loop Height (mm) All wires 1.0 0.15 Note: Use double bond wire at RF IN & RF OUT Page 5 of 6

Additional Detailed Technical Information additional information is available on our dash board. Data Table Performance Data Swept Graphs S-Parameter (S2P Files) Data Set with and without port extension(.zip file) Case Style Die Ordering and packaging information Environmental Ratings Die Quantity, Package Small, Gel - Pak: 10,50,100 KGD* Medium, Partial wafer: KGD*<1745 Model No. XLF-73-DG+ XLF-73-DP+ Available upon request contact sales representative Refer to AN-60-067 ENV-80 *Known Good Dice ( KGD ) means that the dice in question have been subjected to Mini-Circuits DC test performance criteria and measurement instructions and that the parametric data of such dice fall within a predefined range. While DC testing is not definitive, it does help to provide a higher degree of confidence that dice are capable of meeting typical RF electrical parameters specified by Mini-Circuits. ESD Rating** Human Body Model (HBM): Class 1A (250V) in accordance with ANSI/ESD STM 5.1-2001 ** Tested in industry standard MCLP 3x3mm 12 lead package. Additional Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms ); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/mclstore/terms.jsp D. Mini-Circuits does not warrant the accuracy or completeness of the information, text, graphics and other items contained within this document and same are provided as an accommodation and on an As is basis, with all faults. E. Purchasers of this part are solely responsible for proper storing, handling, assembly and processing of Known Good Dice (including, without limitation, proper ESD preventative measures, die preparation, die attach, wire bond ing and related assembly and test activities), and Mini-Circuits assumes no responsibility therefor or for environmental effects on Known Good Dice. F. Mini-Circuits and the Mini-Circuits logo are registered trademarks of Scientific Components Corporation d/b/a Mini- Circuits. All other third-party trademarks are the property of their respective owners. A reference to any third-party trademark does not constitute or imply any endorsement, affiliation, sponsorship, or recommendation by any such third-party of Mini-Circuits or its products. Page 6 of 6