Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. The TO-220 package is universay preferred for a commercia-industria appications at power dissipation eves to approximatey 50 watts. The ow therma resistance and ow package cost of the TO-220 contribute to its wide acceptance throughout the industry. G IRF00NPbF HEXFET Power MOSFET D S TO-220AB PD - 94966A V DSS = 55V R DS(on) = mω I D = 85A Absoute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, @ 0V 85 I D @ T C = C Continuous Drain Current, @ 0V 60 A I DM Pused Drain Current 290 P D @T C = 25 C Power Dissipation 80 W Linear Derating Factor.2 W/ C Gate-to-Source Votage ± 20 V I AR Avaanche Current 43 A E AR Repetitive Avaanche Energy 8 mj dv/dt Peak Diode Recovery dv/dt ƒ 3.6 V/ns T J Operating Junction and -55 to 75 T STG Therma Resistance Storage Temperature Range Sodering Temperature, for 0 seconds 300 (.6mm from case ) Mounting torque, 6-32 or M3 srew 0 bf in (.N m) Parameter Typ. Max. Units R θjc Junction-to-Case 0.85 R θcs Case-to-Sink, Fat, Greased Surface 0.50 C/W R θja Junction-to-Ambient 62 www.irf.com C 07/06/0
Eectrica Characteristics @ T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage 55 V = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Votage Temp. Coefficient 0.058 V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance mω = 0V, I D = 43A (th) Gate Threshod Votage 2.0 4.0 V V DS =, I D = 250µA g fs Forward Transconductance 32 S V DS = 25V, I D = 43A I DSS Drain-to-Source Leakage Current 25 V µa DS = 55V, = 0V 250 V DS = 44V, = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage = 20V na Gate-to-Source Reverse Leakage - = -20V Q g Tota Gate Charge 20 I D = 43A Q gs Gate-to-Source Charge 9 nc V DS = 44V Q gd Gate-to-Drain ("Mier") Charge 4 = 0V, See Fig. 6 and 3 t d(on) Turn-On Deay Time 3 V DD = 28V t r Rise Time 76 I D = 43A ns t d(off) Turn-Off Deay Time 39 R G = 3.6Ω t f Fa Time 48 = 0V, See Fig. 0 Between ead, L D Interna Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 320 = 0V C oss Output Capacitance 690 V DS = 25V C rss Reverse Transfer Capacitance 40 pf ƒ =.0MHz, See Fig. 5 E AS Singe Puse Avaanche Energy 030 250 mj I AS = 4.3A, L = 270µH Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo 85 (Body Diode) showing the A G I SM Pused Source Current integra reverse 290 (Body Diode) p-n junction diode. S V SD Diode Forward Votage.3 V T J = 25 C, I S = 43A, = 0V t rr Reverse Recovery Time 69 ns T J = 25 C, I F = 43A Q rr Reverse Recovery Charge 220 230 nc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 270µH R G = 25Ω, I AS = 43A, =0V (See Figure 2) ƒ I SD 43A, di/dt 20A/µs, V DD V (BR)DSS, T J 75 C Puse width 400µs; duty cyce 2%. This is a typica vaue at device destruction and represents operation outside rated imits. This is a cacuated vaue imited to T J = 75 C. Cacuated continuous current based on maximum aowabe junction temperature. Package imitation current is 75A. 2 www.irf.com D S
I D, Drain-to-Source Current (A) 0 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, Drain-to-Source Current (A) 0 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C 0. 0 V DS, Drain-to-Source Votage (V) 20µs PULSE WIDTH T J = 75 C 0. 0 V DS, Drain-to-Source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, Drain-to-Source Current (A) 0 T J = 25 C T J = 75 C V DS= 25V 20µs PULSE WIDTH 4 6 8 0 2, Gate-to-Source Votage (V) R DS(on), Drain-to-Source On Resistance (Normaized) 2.5 I D = 85A 2.0.5.0 0.5 = 0V 0.0-60 -40-20 0 20 40 60 80 20 40 60 80 T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature www.irf.com 3
I D, Drain-to-Source Current (A) C, Capacitance(pF) IRF00NPbF 6000 5000 4000 3000 2000 0 0 Ciss Coss Crss = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd 0 V DS, Drain-to-Source Votage (V), Gate-to-Source Votage (V) 20 6 2 8 4 I = D 43A V DS = 44V V DS = 27V V DS = V FOR TEST CIRCUIT SEE FIGURE 3 0 0 20 40 60 80 20 Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. Drain-to-Source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage 0 I SD, Reverse Drain Current (A) 0 T J = 75 C T J = 25 C 0 0 OPERATION IN THIS AREA LIMITED BY R DS (on) µsec msec = 0 V 0. 0.0 0.6.2.8 2.4 V SD,Source-to-Drain Votage (V) Fig 7. Typica Source-Drain Diode Forward Votage Tc = 25 C Tj = 75 C 0msec Singe Puse 0 0 V DS, Drain-toSource Votage (V) Fig 8. Maximum Safe Operating Area 4 www.irf.com
LIMITED BY PACKAGE V DS R D I D, Drain Current (A) 80 60 40 20 0 25 50 75 25 50 75 T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature V DS 90% R G Puse Width µs Duty Factor 0. % D.U.T. Fig 0a. Switching Time Test Circuit 0% t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms - V DD Therma Response (Z thjc ) 0. D = 0.50 0.20 0.0 0.05 0.02 0.0 SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 0.0 2. Peak T J= P DM x Z thjc TC 0.0000 0.000 0.00 0.0 0. t, Rectanguar Puse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-Case www.irf.com 5
R G V DS 20V tp L D.U.T IAS 0.0Ω Fig 2a. Uncamped Inductive Test Circuit tp 5V DRIVER - V DD A V (BR)DSS E AS, Singe Puse Avaanche Energy (mj) 500 400 300 200 TOP BOTTOM I D 8A 30A 43A 0 25 50 75 25 50 75 Starting T, Junction Temperature ( J C) Fig 2c. Maximum Avaanche Energy Vs. Drain Current I AS Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF Q GS Q GD D.U.T. V - DS V G 3mA Charge Fig 3a. Basic Gate Charge Waveform I G I D Current Samping Resistors Fig 3b. Gate Charge Test Circuit 6 www.irf.com
Peak Diode Recovery dv/dt Test Circuit D.U.T* ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - R G dv/dt controed by R G I SD controed by Duty Factor "D" D.U.T. - Device Under Test - V DD * Reverse Poarity of D.U.T for P-Channe Driver Gate Drive Period P.W. D = P.W. Period [ =0V ] *** D.U.T. I SD Waveform Reverse Recovery Current Re-Appied Votage Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt Inductor Curent Body Diode Rippe 5% Forward Drop [ V DD ] [ ] I SD *** = 5.0V for Logic Leve and 3V Drive Devices Fig 4. For N-channe HEXFET power MOSFETs www.irf.com 7
TO-220AB Package Outine Dimensions are shown in miimeters (inches) TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF00 LOT CODE 789 ASSEMBLED ON WW 9, 2000 IN THE ASSEMBLY LINE "C" Note: "P" in assemby ine position indicates "Lead - F ree" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 9 LINE C Notes:. For an Automotive Quaified version of this part pease see http://www.irf.com/product-info/auto/ 2. For the most current drawing pease refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and quaified for the Industria market. Quaification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, USA Te: (30) 252-705 TAC Fax: (30) 252-7903 Visit us at www.irf.com for saes contact information. 07/200 8 www.irf.com