New Product N-Channel -V (-S) MOSFET SiBEK PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.). at V GS =.5 V. at V GS =.5 V PowerPAK SC-75-L-Single 5. mm S S G. mm.5 nc Part # code Marking Code A X X X X FEATURES Halogen-free According to IEC 9-- TrenchFET Power MOSFET New Thermally Enhanced PowerPAK SC-75 Package - Small Footprint Area - Low On-Resistance Typical ES Protection 5 V APPLICATIONS Load Switch for Portable Applications High Frequency C/C Converter Lot Traceability and ate code G Ordering Information: SiBEK-T-GE (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T A = 5 C, unless otherwise noted S N-Channel MOSFET Parameter Symbol Limit Unit rain-source Voltage V S Gate-Source Voltage V GS ± V T C = 5 C a T Continuous rain Current (T J = 5 C) C = 7 C I a T A = 5 C 5. b, c T A = 7 C. b, c A Pulsed rain Current I M 5 Continuous Source-rain iode Current T C = 5 C a T I S A = 5 C. b, c T C = 5 C Maximum Power issipation T C = 7 C P. T A = 5 C.95 b, c W T A = 7 C.5 b, c Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 Soldering Recommendations (Peak Temperature) d, e C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient b, f t 5 s R thja 5 C/W Maximum Junction-to-Case (rain) Steady State R thjc.5 Notes: a. Package limited b. Surface Mounted on " x " FR board. c. t = 5 s. d. See Solder Profile (/ppg?757). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is C/W. ocument Number: 988 S-895-Rev. A, 9-ec-8
SiBEK New Product SPECIFICATIONS T J = 5 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static rain-source Breakdown Voltage V S V GS = V, I = 5 µa V V S Temperature Coefficient ΔV S /T J I = 5 µa V GS(th) Temperature Coefficient ΔV GS(th) /T J -. mv/ C Gate-Source Threshold Voltage V GS(th) V S = V GS, I = 5 µa.. V Gate-Source Leakage I GSS V S = V, V GS = ± V ± 8 V S = V, V GS = V - µa Zero Gate Voltage rain Current I SS V S = V, V GS = V, T J = 55 C - On-State rain Current a I (on) V S 5 V, V GS =.5 V A V GS =.5 V, I =.9 A rain-source On-State Resistance a.7. R S(on) V GS =.5 V, I =. A.5. Ω Forward Transconductance a g fs V S = V, I =.9 A S ynamic b Input Capacitance C iss 5 Output Capacitance C oss V S = V, V GS = V, f = MHz pf Reverse Transfer Capacitance C rss 7 V S = V, V GS = V, I = 5. A 7.5 Total Gate Charge Q g.5 5.5 nc Gate-Source Charge Q gs V S = V, V GS =.5 V, I = 5. A.95 Gate-rain Charge Q gd.75 Gate Resistance R g f = MHz.5 Ω Turn-On elay Time t d(on) 5 Rise Time t r V = V, R L =. Ω Turn-Off elay Time t d(off) 8 I. A, V GEN =.5 V, R g = Ω Fall Time t f Turn-On elay Time t d(on) 5 ns Rise Time t r V = V, R L =. Ω Turn-Off elay Time t d(off) 5 5 I. A, V GEN = V, R g = Ω Fall Time t f 5 rain-source Body iode Characteristics Continuous Source-rain iode Current I S T C = 5 C Pulse iode Forward Current I SM 5 A Body iode Voltage V S I S =. A, V GS = V.8. V Body iode Reverse Recovery Time t rr 5 ns Body iode Reverse Recovery Charge Q rr 8 nc I F =. A, di/dt = A/µs, T J = 5 C Reverse Recovery Fall Time t a 8 ns Reverse Recovery Rise Time t b 7 Notes: a. Pulse test; pulse width µs, duty cycle % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ocument Number: 988 S-895-Rev. A, 9-ec-8
New Product SiBEK TYPICAL CHARACTERISTICS 5 C, unless otherwise noted - - - Gate Current (ma) I GSS I GSS at 5 C - Gate Current (A) I GSS - -5 - -7-8 T J = 5 C T J = 5 C -9 9 5 8 V GS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage - 9 5 8 V GS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage I - rain Current (A) 5 9 V GS =5thru V V GS =.5V V GS =V I - rain Current (A) 5 T C = - 55 C T C = 5 C V GS =.5V..5..5..5. V S - rain-to-source Voltage (V) Output Characteristics. T C = 5 C..5..5. V GS - Gate-to-Source Voltage (V) Transfer Characteristics 5 - On-Resistance (Ω) R S(on).9.. V GS =.5V V GS =.5V C - Capacitance (pf) C oss C iss. 9 5 I - rain Current (A) On-Resistance vs. rain Current and Gate Voltage C rss 8 8 V S - rain-to-source Voltage (V) Capacitance ocument Number: 988 S-895-Rev. A, 9-ec-8
SiBEK New Product TYPICAL CHARACTERISTICS 5 C, unless otherwise noted.7 - Gate-to-Source Voltage (V) V GS 8 I =5.A V S =V V S =V R S(on) - On-Resistance (Normalized).5...9.7 I =.9A V GS =.5V,.5V 8 Q g - Total Gate Charge (nc) Gate Charge.5-5 - 5 5 5 75 5 5 T J -Junction Temperature ( C) On-Resistance vs. Junction Temperature. I =A - Source Current (A) I S T J = 5 C T J = 5 C - On-Resistance (Ω) R S(on)...8. T J = 5 C T J =5 C......8... V S -Source-to-rain Voltage (V) Source-rain iode Forward Voltage.. 5 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage. 5. I = 5 µa (V) V GS(th)..9 Power (W) 5.8.7 5. - 5-5 5 5 75 5 5 T J - Temperature ( C) Threshold Voltage... Pulse (s) Single Pulse Power (Junction-to-Ambient) ocument Number: 988 S-895-Rev. A, 9-ec-8
New Product SiBEK TYPICAL CHARACTERISTICS 5 C, unless otherwise noted Limited by R S(on) * - rain Current (A) I. T A = 5 C Single Pulse BVSS Limited µs ms ms ms s,s C.. V S - rain-to-source Voltage (V) * V GS > minimum V GS at which R S(on) is specified Safe Operating Area, Junction-to-Ambient 5 I - rain Current (A) 9 Package Limited Power issipation (W) 9 5 5 75 5 5 T C - Case Temperature ( C) Current erating* 5 5 75 5 5 T C - Case Temperature ( C) Power erating * The power dissipation P is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. ocument Number: 988 S-895-Rev. A, 9-ec-8 5
SiBEK New Product TYPICAL CHARACTERISTICS 5 C, unless otherwise noted uty Cycle =.5 Normalized Effective Transient Thermal Impedance.. Notes:..5 P M t. t t. uty Cycle, = t. Per Unit Base = R thja = C/W. T JM -T A =P M Z (t) thja. Single Pulse. Surface Mounted - - - - Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient uty Cycle =.5 Normalized Effective Transient Thermal Impedance.....5 Single Pulse. - - - - Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?988. ocument Number: 988 S-895-Rev. A, 9-ec-8
Package Information PowerPAK SC75-L e b e b PIN PIN PIN PIN PIN PIN E K E E K L K E K PIN PIN5 PIN PIN PIN5 PIN K K K K K K BACKSIE VIEW OF SINGLE BACKSIE VIEW OF UAL A Notes:. All dimensions are in millimeters. Package outline exclusive of mold flash and metal burr. Package outline inclusive of plating E L E A C z Z ETAIL Z SINGLE PA UAL PA IM MILLIMETERS INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max A.75.75.8.7...75.75.8.7.. A -.5 -. -.5 -. b.8.5..7...8.5..7.. C.5..5..8..5..5..8..5..7...7.5..7...7.57.7.77......5..7......8. E.5..7...7.5..7...7 E....9..7.5..7...8 E..5..8.. E..7...5.7 e.5 BSC. BSC.5 BSC. BSC K.8 TYP.7 TYP.5 TYP. TYP K.75 TYP. TYP. TYP. TYP K. TYP.8 TYP. BSC.8 TYP K.55 TYP. TYP K. TYP. TYP L.5.5.5....5.5.5... T..8....5 ECN: C-7 Rev. C, -Aug-7 WG: 595 ocument Number: 7 -Aug-7
Application Note 8 RECOMMENE PA LAYOUT FOR PowerPAK SC75-L Single.5 (.9).5 (.).5 (.).5 (.). (.). (.).8 (.7).7 (.5).7 (.7). (.). (.). (.79). (.8). (.). (.).55 (.).7 (.). (.79).5 (.) imensions in mm/(inches) Return to Index APPLICATION NOTE ocument Number: 788 Revision: -Jan-8
Legal isclaimer Notice Vishay isclaimer ALL PROUCT, PROUCT SPECIFICATIONS AN ATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR ESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 7 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVE Revision: 8-Feb-7 ocument Number: 9