Date Created: 1/12/4 Modulators Digital Intensity Modulators Modulators 2.Gb/sec.....................Page 2 2.Gb/sec Small Form Factor.......Page 3 2.Gb/sec with Attenuator.........Page 4 12.Gb/sec Integrated Modulator and Driver Module.......Page Analogue Intensity Modulators CATV Dual Optic Modulator........Page 6 1 / 2 / 4GHz Modulator.........Page 7 For more information on Laser 2 products visit our website at: www.laser2.co.uk 1
Electro Response 2. Gb/s Integrated Optic Intensity Modulator SD.. 1 1. 2 2. 3 Chirp Free Operation Titanium Indiffused Waveguides Full C and L Band Operation Low Insertion Loss > 1 dbm Output Power High Extinction Ratio Integrated Photodiode Optional Zero Chirp External Intensity Modulation Ideal for 2 GHz and GHz Channel Separation Low cost Long-Haul Networks (> 1 km reach) Wavelength Tunable Tx Units S1,1 (db) Return Loss. 1 1. 2 2. 3 Avanex Integrated Optic Intensity Modulators are based on a Waveguide Mach Zehnder Interferometer structure. Titanium indiffusion in x-cut, y-propagating Lithium Niobate substrates provides highly reliable and thermally stable devices with very low insertion loss. Avanex 2. Gb/s digital modulators are designed for applications in advanced communication networks where chirp free signal generation at medium bit rates is required. More than a decade of experience in development and volume production of LiNbO3 components guarantee superior reliability and performance of Avanex s modulator product line. Suitable driver amplifiers are available through Avanex recommended partners. Eye Diagram For more information on Laser 2 products visit our website at: www.laser2.co.uk 2 Max Input Power () dbm - - 2 Max Input Power () mw CW - 1 Maximum Operating Temperature Variation Rate C/min - - 1 Storage Temperature Range C - +8 Operating Temperature Range C - +7 Operating Wavelengths Range C and L Band Insertion Loss db 4. Extinction Ratio (DC) db 2 Return Loss, Without Connectors db S 21 Electro Optic Bandwidth ( dbe) GHz 3 S 11 Return Loss db RF V Voltage (@ 1 khz) V. Bias V Voltage (@ 1 khz) V 8. PRBS Drive Voltage (V amp ) V 4. Dynamic Extinction Ratio db 1 Input Connector Impedance Ω Where not specified, parameters are measured at 2 C Pin-Out and Fibres Avanex/Fujikura SM1P UV/UV4 (Panda fibre) 1 1 1 SD2.-OP-Px-yyzz- 18 14 99.4 3 37 3.4.8
Electro Response 2. Gb/s Integrated Optic Intensity Modulator Small Form Factor IM. Minimised Form Factor, 6. cm Boot-to-Boot Reduced Cost EML-Driver Compatible (<3V) Covers Extended C and L Band Enables >1 dbm Output Power Fully Footprint Compatible to other Mini Modulators Further Enhanced Bias Stability Integrated Photodiode Optional High Performance, Chirp Free Signal Generation Long-Haul Transmission with > 1 km Reach Ideal for 2 GHz and GHz Channel Separation Low Cost DWDM Metro Core Low Cost Long-Haul Networks Wavelength Tuneable Tx Units S1,1 (db). 1 1. 2 2. 3 Return Loss. 1 1. 2 2. 3 Eye Diagram Eye Diagram with EML Driver For more information on Laser 2 products visit our website at: www.laser2.co.uk 3 Avanex has designed this advanced 2. Gb/s modulator specifically for application in emerging DWDM Metro Systems where cost, size and performance are key factors. Enabling maximum bandwidth efficiency, this modulator replaces EMLs in systems designed for channel spacings of and 2 GHz. The potential for >1 db higher output power can contribute to reduce amplifier stages in Metro networks. Moreover, Lithium Niobate opens the L band for DWDM Metro Systems. The potential channel count can be increased by a factor of ten compared to EMLs. Avanex s new 2. Gb/s Small Form Factor Lithium Niobate Modulator offers a very cost-effective solution for high performance extended Metro and Long-Haul DWDM networks at medium bit-rates. Suitable driver amplifiers are available through Avanex recommended partners. Max Input Power () dbm - - 2 Max Input Power () mw CW - 1 Maximum Operating Temperature Variation Rate C/min - - 1 Storage Temperature Range C - +8 Operating Temperature Range C - +7 Operating Wavelengths Range C and L Band Insertion Loss db 4. Extinction Ratio (DC) db 2 Return Loss, Without Connectors db S 21 Electro Optic Bandwidth ( dbe) GHz 3. S 11 Return Loss db RF V π Voltage (@ 1 khz) V 4. Bias V π Voltage (@ 1 khz) V 4. PRBS Drive Voltage (V amp @ ER max ) V 3.8 Max. Dynamic Extinction Ratio db 1 Dynamic Extinction Ratio (V amp = 3V) db 13 Input Connector Impedance Ω Where not specified, parameters are measured at 2 C Vamp = 3. V, ER > 17dB Pin-Out and Fibres LEAD Pins LEAD Pins Avanex/Fujikura SM1P UV/UV4 (Panda fibre) Vamp = 2.4 V, ER > 13 db IM2.-OP-Px-yyzz- Pin 1: Pin 2: Pin 3: Pin 4: Pin : Pin 6: Ground RF Ground Bias Ground Photodiode 4.7 4 1 2 3 4 6.8 2.4 2.4 11.77 12.7 1.16 2x2.6 Deep min 2 UNC 28 2.1. 3 9. 9.8
2. Gb/s Integrated Optic Intensity Modulator with Attenuator SD. -A: Chirp Free Operation Titanium Diffused Waveguides Full C and L Band Operation Low Insertion Loss >1 dbm Output Power Very High Extinction Ratio Non Periodic, Monotonic Attenuation Characteristic Integrated Photodiode Optional Zero Chirp External Intensity Modulation with Power Pre-Emphasis Long-Haul Transmission with >1 km Uncompensated Reach < GHz Channel Separation DWDM Dynamic Power Control Low Cost DWDM Networks Wavelength Tunable Tx Units S1,1 (db) -6-7 -8 Electro Response 1 2 3 4 Return Loss 1 2 3 4 Eye Diagram For more information on Laser 2 products visit our website at: www.laser2.co.uk 4 Avanex s 2. Gb/s Digital Intensity Modulator with Integrated Variable Attenuator enables pre-emphasis of each channel in long and ultra-long haul DWDM systems. As with all Avanex Mach-Zehnder modulators, the Titanium indiffusion process in x-cut, y-propagating Lithium Niobate substrates guarantees highest reliability and very low temperature drifts. Intensity Modulators with integrated variable optical attenuators enable high flexibility in DWDM system operation. Suitable driver amplifiers are available through Avanex recommended partners. Max Input Power () dbm - - 2 Max Input Power () mw - - 1 Max V Bias Attenuator V CW - 4 Max V Bias Electrode V Unbalanced - 3 Maximum Operating Temperature Variation Rate C/min - - 1 Storage Temperature C - +8 Operating Temperature Range C - +7 Operating Wavelengths Range C and L Band Insertion Loss db.2 Extinction Ratio (DC) db 2 Return Loss, Without Connectors db Attenuation Range (± 2V) db 1 S 21 Electro Optic Bandwidth ( dbe) GHz 2. S 11 Return Loss db RF V Voltage (@ 1 khz) V. Bias V Voltage (@ 1 khz) V. PRBS Drive Voltage (V amp ) V 4. Dynamic Extinction Ratio db 1 Input Connector Impedance Ω Where not specified, parameters are measured at 2 C 1 1 1 SD2.-AS-Px-yyzz- Pin-Out and Fibres Attenuation Connector Lead Pins Avanex/Fujikura SM1P UV/UV4 (Panda Fibre) 22.1 27.1 38.1 3.4 14 18 8.9
137.92 12. Gb/s Integrated Modulator and Driver Module 6.3 3.4 36 3.16 3.46 48.1 32.1 37.94 IM-DM Fully Matched Elements for High Performance Modulation - Lithium Niobate Modulator - RF Drive Electronics - Monitor Photodiode - Bias Control Circuit Chirp Free Operates Across Full C and L Band Low Power Consumption Hermetically Sealed Package Small Form Factor Temperature Compensated T= C 121.92 117.3.8 6.6 7.1.86 3.18 Eye Diagrams T=3 C 6.67 Pin 1: Positive Power Supply (+9V) Pin 2: Ground Pin 3: Negative Power Supply (-9V) Pin 4: Reserved Pin : Reserved Pin 6: Reserved Pin 7: Modulator Bias Monitor Pin 8: Photodiode Average Power Monitor 2.6 UNC 18 DEEP.18 (x4) SONET/SDH and DWDM Systems FEC Capable Efficient Transponder / Transceiver Architecture For more information on Laser 2 products visit our website at: www.laser2.co.uk Avanex s Integrated Modulator and Driver Module (IMDM) combines key elements required to implement a high performance LiNbO3 based transponder. The module integrates a Lithium Niobate MZ modulator together with RF driver, monitor photodiode and Bias control circuitry. This solution simplifies the fibre management inside a transponder card by providing a ready to assembly unit. Designers can also save valuable board space and significantly reduce development and manufacturing time. DM-O3P-Px-yyzz-oo Max Input Power () mw CW 1 Maximum Operating 1 C/min Temperature Variation Rate DC Power Supply Positive V I = 27 ma 8. 9.4 DC Power Supply Negative V I = ma -9.4-8. Storage Temperature C +8 Operating Temperature Range C +7 T=7 C Unit Polarity - Non Inverting and Inverting Operating Wavelengths - C and L Band Insertion Loss db Extinction Ratio db 13. (1.7 Gb/s PRBS; 2 31 ) Return Loss db Crossing Point Variation % ± 3 RF Input Return Loss db 2 Rise Time ps 29 Jitter p-p (total, including pattern dependency) ps 1 Input Drive Voltage V.4 Supply Power Dissipation W 3 PD Monitoring Responsivity V/mW.2 Vbias Monitoring Vpin/Vbias Modulator -. Where not specified, parameters are measured at 2 C Pin-Out and Fibres Flush GPO Power and Monitor Connector LEAD Pins Avanex/Fujikura SM1P UV/UV2 (Panda fibre)
Dual Optic Analogue Modulator AM: Electro Response 1. -.. Ti-Diffused Waveguides 1 nm Window Travelling Wave Electrode Design Separate Bias Electrode Dual Output Port, 18 Phase Difference Low CSO on Both Outputs Low Drive Voltage Low Insertion Loss High Efficiency Phase Modulator Electrode External Intensity Modulation in Analogue Transmission Systems for Cable TV. 1 2 3 4 6 7 8 9 1 f (MHz) Return Loss -8-9 1 2 3 4 1 2 3 4 6 7 8 9 1 For more information on Laser 2 products visit our website at: www.laser2.co.uk 6 Avanex Analogue Intensity Modulator is based on a Mach-Zehnder waveguide interferometer and is manufactured using the Titanium indiffusion in x-cut, y-propagating Lithium Niobate substrates. The modulator can be actively controlled by electronics to provide high level of CSO and CTB suppression, as needed for CATV application. Max RF Input Power dbm - - 2 Max Phase Input Power dbm - - 3 Max Input Power mw CW - 1 Maximum Operating Temperature Variation Rate C/min - - 1 Storage Temperature Range C - +8 Operating Temperature Range C - +7 Operating Wavelength Range nm 14 16 Insertion Loss db 4 Insertion Loss Imbalance db. Extinction Ratio db 2 Return Loss db E/O Bandwidth Roll-Off (from MHz to 2 MHz) db.8 E/O Bandwidth Roll-Off (from 2 MHz - 1 GHz) db 2 RF Power dbm 12.7 Bias V Voltage (@ 1 khz) V 8. Phase V Voltage (@ 1 khz) V 6. Return Loss (electrical) db Impedance Ω 2 Impedance Ω 1 Phase Connector Impedance Ω Modulated Phase Difference Between Outputs ±. Max CSO dbc -7 Where not specified, parameters are measured at 2 C Pin-Out and Fibres Phase Connector Avanex/Fujikura SM1P UV/UV4 (Panda fibre) 1 17. 12. Phase S1,1 ( ) AM1-OP-Px-yyzz-. f (MHz) RF Phase Distortion 4 3 2 1 1 2 3 4 6 7 8 f (MHz) 117.6 113.6 3 26 19 3.6 OUT 1 BLUE OUT 2 WHITE
2 Electro Response 1/2/4 GHz Analogue Modulator AM - 1/2/4-6 Titanium In-Diffused Waveguides X-cut LiNbO3 Low Drive Voltage Compatible with Commercially Available Drivers Low Insertion Loss 13 nm and 1 nm Wavelength Range Operating up to 4 GHz Integrated Photodiode Available on Request Small Footprint Antenna Remoting High Frequency Fibre Optic Links Analog Microwave over Fibre Delay Lines Telemetry Systems These high performance integrated optical modulators have been specifically designed to target an emerging market in the field of civil and military transmission. Avanex analogue modulators combine high linearity with low driving voltage and small footprint, covering all the frequency range from 1 to 4 GHz and both the 13 nm and 1 nm wavelength window. The increasing demand to shift the transmission frequency in microwave fibre optic links towards higher frequency find in Avanex analog modulators the most advanced and suitable answer. The experience and know-how of Avanex engineers is available to satisfy the most challenging requests and to customise our products to customer s requests. -8 1 1 2 2 3 3 4 4 Return Loss 1 1 2 2 3 3 4 4 For more information on Laser 2 products visit our website at: www.laser2.co.uk 7 Conditions Min Max Max Input Power () dbm RF port - 2 Max Input Power () mw - - 1 Maximum Operating Temperature Variation Rate C/min CW - 1 Storage Temperature Range C - +8 Operating Temperature Range C - +7 Operating Wavelength Range nm 128 134 12 161 Insertion Loss db < 4. < Return Loss db > > Extinction Ratio db > 2 > 2 S 21 Electro Optic Bandwidth ( dbe) GHz >1 >2 >33 >1 >2 >33 S 11 Return Loss db < < RF V Voltage (@ 1 khz) V 4. Bias V Voltage (@ 1 khz) V.. 2 nd Harmonic Suppression db 4 4 Input Connector Impedance Ω Photodiode Responsivity A/W 1 1 Linearity ± 1% ± 1% Pin-Out and Fibre GPO for 1 GHz V Connector (1) for 2 and 4 GHz LEAD Pins 13 nm Avanex Puremode PM13 UV/UV2 1 nm Avanex Puremode PM1 UV/UV2 Output Fibre 13 nm Avanex SMF28 1 nm Avanex SMF28 (1) V Connector is a registered trademark of Anritsu Corporation AMbb-o-bbP-Px-yyzz- bb Bandwidth 1 = 1 GHz 2 = 2 GHz 3 = 3 Ghz yy, zz Input and Output Connectors NC = No Connectors