RoHS COMPLIANT 2-3GHz Single Side Band Mixer Self biased GaAs Monolithic Microwave IC Description The CHR2294 is a multifunction chip (MFC) which integrates a self biased LO buffer amplifier and a sub-harmonically balanced diodes mixer for 2LO suppression and image rejection. It is usable for both up-conversion and down-conversion. It is designed for a wide range of applications, typically commercial communication systems for broadband local access. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a phemt process,.2µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features 3 2 2 1 CL sup (db) Up-conversion Supradyne mode IF=1.2GHz Imag Supp (dbc) Broadband performances: 2-3GHz 11dB conversion Loss dbc image rejection +9dBm LO input power +2.dBm input power (1dB gain comp.) Low DC power consumption, ma@4v Chip size: 2.6 x 1.2 x.1mm P LO@RF (dbm) P 2xLO @RF (dbm) -1-2 -2-3 -3-4 -4 22 23 24 2 26 27 28 29 3 31 32 33 34 3 36 RF frequency (GHz) Main Characteristics Tamb. = 2 C Parameter Min Typ Max Unit F RF RF frequency range 2 3 GHz F LO LO frequency range 11 19 GHz F IF IF frequency range DC 3. GHz L c Conversion Loss 11 db ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DSCHR2294197-16 Jul 1 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46-9141 Orsay Cedex France Tel. : +33 ()1 69 33 3 8 - Fax : +33 ()1 69 33 3 9
Electrical Characteristics for Broadband Operation Tamb = +2 C Symbol Parameter Min Typ Max Unit FRF RF frequency range 2 3 GHz FLO LO frequency range 11 19 GHz FIF IF frequency range DC 3. GHz Lc Conversion Loss 11 db PLO LO Input power +9 dbm 2xLO Leak 2xLO Leakage (for PLO=+dBm) -3 dbm Img Rej Image Rejection (1) dbc P1dB Input power at 1dB gain compression +2. dbm LO Match LO VSWR 2.:1 RF Match RF VSWR 2.:1 IF Match IF VSWR 2.:1 Vd Drain bias voltage 4 V Id Bias current ma (1) With external quadrature hybrid coupler (reference on request). The minimal value depends on the quality of the external quadrature combiner. A bonding wire of typically.1 to.nh will improve the accesses matching. Absolute Maximum Ratings Tamb. = 2 C (1) Symbol Parameter Values Unit Vd Drain bias voltage 4.2 V Id Drain bias current 7 ma Tj Junction temperature 17 C Ta Operating temperature range (chip backside) -4 to +8 C Tstg Storage temperature range to +12 C (1) Operation of this device above anyone of these parameters may cause permanent damage. Ref. : DSCHR2294197-16 Jul 1 2/8 Specifications subject to change without notice Route Départementale 128, B.P.46-9141 ORSAY Cedex - FRANCE Tel.: +33 ()1 69 33 3 8 - Fax : +33 ()1 69 33 3 9
CHR2294 Typical Measured Performances with external 9 IQ combiner Tamb = +2 C, VD=4V, P_LO = 9dBm These values are representative of de-embedded onboard measurements as defined on the Evaluation mother board section. 3 2 2 1-1 -2-2 -3-3 -4-4 CL sup (db) P LO@RF (dbm) Imag Supp (dbc) P 2xLO @RF (dbm) 22 23 24 2 26 27 28 29 3 31 32 33 34 3 36 RF frequency (GHz) Conversion Loss, Image suppression & LO rejection UP Conversion - Supra-dyne mode - IF =1.2GHz 3 2 2 1-1 -2-2 -3-3 -4-4 CL inf (db) P LO@RF (dbm) Imag-Supp (dbc) P 2xLO @RF (dbm) 22 23 24 2 26 27 28 29 3 31 32 33 34 3 36 RF frequency (GHz) Conversion Loss, Image suppression & LO rejection UP Conversion - Infra-dyne mode - IF =1.2GHz Ref. : DSCHR2294197-16 Jul 1 3/8 Specifications subject to change without notice Route Départementale 128, B.P.46-9141 ORSAY Cedex - FRANCE Tel.: +33 ()1 69 33 3 8 - Fax : +33 ()1 69 33 3 9
-1-2 -3-4 -6-7 F LO=12GHz F LO=14GHz F LO=16GHz -8-9 -1-11 -12-13 -14-16 -2-18 -16-14 -12-1 -8-6 -4-2 2 4 6 IF Input power (dbm) Gain compression versus IF input power UP Conversion Supra-dyne mode - IF =1.2GHz -2-4 -6-8 CL sup CL -inf -1-12 -14-16 -18-2, 1 1, 2 2, 3 3, 4 4, IF frequency (GHz) Conversion Loss versus IF frequency Supra-dyne and Infra-dyne mode OL=GHz Ref. : DSCHR2294197-16 Jul 1 4/8 Specifications subject to change without notice Route Départementale 128, B.P.46-9141 ORSAY Cedex - FRANCE Tel.: +33 ()1 69 33 3 8 - Fax : +33 ()1 69 33 3 9
CHR2294 Temperature Measurements T = -4, +2, 8 C, VD =4V, P_LO = 9dBm 4 3 3 CL sup -4 C 2-1 CL sup +2 C CL sup +8 C 2 Imag Supp -4 C Imag Supp +2 C Imag Supp +8 C 1-2 22 23 24 2 26 27 28 29 3 31 32 33 34 3 36 22 23 24 2 26 27 28 29 3 31 32 33 34 3 36 Conversion Loss, Image suppression UP Conversion Supra-dyne mode - IF =1.2GHz 4 3 3-1 CL inf -4 C CL inf +2 C CL inf +8 C 2 2 Imag Supp -4 C Imag Supp+2 C Imag Supp+8 C 1-2 22 23 24 2 26 27 28 29 3 31 32 33 34 3 36 Conversion Loss, Image suppression UP Conversion Infra-dyne mode - IF =1.2GHz 22 23 24 2 26 27 28 29 3 31 32 33 34 3 36 Ref. : DSCHR2294197-16 Jul 1 /8 Specifications subject to change without notice Route Départementale 128, B.P.46-9141 ORSAY Cedex - FRANCE Tel.: +33 ()1 69 33 3 8 - Fax : +33 ()1 69 33 3 9
Chip Assembly and Mechanical Data Bonding pad positions (Chip thickness: 1µm) To VD DC Drain Supply 1nF 12pF Note: Supply feed should be bypassed. 2µm diameter gold wire is recommended. Ref. : DSCHR2294197-16 Jul 1 6/8 Specifications subject to change without notice Route Départementale 128, B.P.46-9141 ORSAY Cedex - FRANCE Tel.: +33 ()1 69 33 3 8 - Fax : +33 ()1 69 33 3 9
Evaluation mother board Based on typically Ro43 / 8mils or equivalent. Decoupling capacitors of 12pF±1% + 1nF ±1% are recommended for all DC accesses. Hybrid coupler Mid-Atlantic 9 1.-2.1GHz Hybrid coupler Anaren 9 2-4GHz Ref. : DSCHR2294197-16 Jul 1 7/8 Specifications subject to change without notice Route Départementale 128, B.P.46-9141 ORSAY Cedex - FRANCE Tel.: +33 ()1 69 33 3 8 - Fax : +33 ()1 69 33 3 9
Recommended ESD management Refer to the application note AN2 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Ordering Information Chip form: CHR2294-99F/ Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHR2294197-16 Jul 1 8/8 Specifications subject to change without notice Route Départementale 128, B.P.46-9141 ORSAY Cedex - FRANCE Tel.: +33 ()1 69 33 3 8 - Fax : +33 ()1 69 33 3 9