PLCC2 Pkg Infrared Light Emitting Diode & Series Features: SMD Package High power GaAs, 940 nm typical peak wavelength Standard GaAlAs, 890nm typical peak wavelength High power GaAIAs K and KT, 875 nm typical peakwavelength VCSEL GaAlAs, 850 nm typical peak wavelength Point Source GaAlAsPS, 850 nm typical peakwavelength LCC2 package style with silicon encapsulation Half Power Beam angle from 8 to 00 Variety of power ranges Description: The is a GaAs and the series are GaAlAs infrared LED mounted in plastic leadless PLCC2 SMD package with a flat lens window that allows for wide beam angles. All parts endure the attribute of silicone encapsulation to increase the longevity of the product. The is a high performance 850nm vertical cavity surface emitting laser (VCSEL). This device requires substantially lower current to achieve same amount of output power as LEDS. Its high speed, high output makes it versatile with low input current. The PS features a point source irradiance pattern, stable forward voltage over temperature and low rise and fall times, making it ideal for high speed operations. The K and the KT are high performance, high speed, high power IRLEDS. The KT utilizes double hetero junction technology with reverse polarity terminals. The low power consumption PLCC2 packaging is suitable for single device or array applications. The 80 and 280 Series LEDs are mechanically and spectrally matched to OP580 series phototransistors. Please refer to Application Bulletins 208 and 20 for additional design information and reliability (degradation) data. Applications: Noncontact position sensing Datum detection Light curtains Photoelectronic sensors Machine automation Optical encoding IR illumination Night vision systems Part Number Apertured Power (mw/cm 2 ) Ordering Information I F (ma) LED Peak Wavelength Half Power Angle 0.50 20 940 nm 00 0.50 20 890 nm 00 KT 0.85 20 850 nm 90 K 0.85 20 875 nm 90 PS 0.5 20 850 nm 50 2.50 7 850 nm 8 Pin # ( or 2 K PS 2 KT Pin # KT K PS 2 RoHS Phone: (972) 3232200 or (800) 344747 FAX: (972) 3232396 sensors@optekinc.com www.optekinc.com Page of 8
Infrared Light Emitting Diode & Series Absolute Maximum Ratings (T A =25 C unless otherwise noted) Storage Temperature Range Operating Temperature Range,, K, KT, PS Reverse Voltage,, PS, K, KT Peak Forward Current [ µs pulse width, 300 pps] (Except ) 40 o C to +00 o C 25 o C to +85 o C 0 o C to +70 o C 5.0 V 4.0 V.0 A Lead Soldering Temperature [/6 inch (.6 mm) from case for 5 seconds with soldering iron] 260 C () Power Dissipation 30 mw (2) Electrical Characteristics (T A = 25 C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode E E (APT) Radiant Incidence K KT PS 0.50 0.50 0.65 0.65 0.0.50 mw/cm 2 (3) (3) (3) (3) (3) I F = 7 ma (3) V F Forward Voltage K KT PS.28.50.55.95.50.60.50.80.80 2.50.80 V I F = 50 ma I F = 7 ma I R Reverse Current 00 µa V R= 5.0 V λ P Wavelength at Peak Emission KT PS, K OP 940 890 850 875 850 nm I F = 7 ma θ HP Emission Angle at Half Power Points,, K, KT PS 00 90 8 Degree I F = 7 ma t r t f Output Rise Time, K, KT, PS Output Fall Time, K, KT, PS 25 700 25 700 00 00 ns ns ps ns ns ps I F(PK)=50 ma, PW=0 µs, and D.C.=0.0% I F(PK)=5 ma, PW=0 µs, and D.C.=0.0% (For ) Notes:. Solder time less than 5 seconds at temperature extreme. 2. Derate linearly at 2.7 mw/ C above 25 C. 3. E E(APT) is a measurement of the apertured radiant incidence upon a sensing area 0.08 (2.06 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens and 0.590 (4.99 mm) from the measurement surface. E E(APT) is not necessarily uniform within the measured area. Page 2 of 8 Phone: (972) 3232200 or (800) 344747 FAX: (972) 3232396 sensors@optekinc.com www.optekinc.com
PLCC2 Pkg Infrared Light Emitting Diode & Series Typical Forward Voltage.6.5.4.3.2 Forward Voltage vs Forward Current vs Temperature 4 2 +2 +4 +6 +8 +0. 0 5 0 5 20 25 30 35 40 45 50 Forward Current (ma) Normalized Optical Power 3.5 3.0 2.5 2.0.5.0 Normalized at 50 ma and 20 C 60 C 40 C 20 C 0 C 20 C 40 C 60 C 80 C 00 C 20 C 0.5 0.0 0 0 20 30 40 50 60 70 80 90 00 Forward Current I F (ma) Phone: (972) 3232200 or (800) 344747 FAX: (972) 3232396 sensors@optekinc.com www.optekinc.com Page 3 of 8
Infrared Light Emitting Diode & Series Normalized E E 4.0 3.5 3.0 2.5 2.0.5 Optical Power Ee vs Forward Current I F vs Temperature T I F vs E E vs A Temp. 4 2 +2 +4 +6 +8 +0 Normalized @ +2, 20 ma.0 0.5 0.0 0 5 0 5 20 25 30 35 40 45 50 I F (ma).4 Forward Voltage V F vs Forward Current I F Ivs F vs Temperature T V F vs Temp. A.35.3.25 V F (Volts).2.5..05 4 2 +2 +4 +6 +8 +0 0 5 0 5 20 25 30 35 40 45 50 I F (ma) Page 4 of 8 Phone: (972) 3232200 or (800) 344747 FAX: (972) 3232396 sensors@optekinc.com www.optekinc.com
PLCC2 Pkg Infrared Light Emitting Diode & Series K Phone: (972) 3232200 or (800) 344747 FAX: (972) 3232396 sensors@optekinc.com www.optekinc.com Page 5 of 8
Infrared Light Emitting Diode & Series KT Page 6 of 8 Phone: (972) 3232200 or (800) 344747 FAX: (972) 3232396 sensors@optekinc.com www.optekinc.com
PLCC2 Pkg Infrared Light Emitting Diode & Series PS Phone: (972) 3232200 or (800) 344747 FAX: (972) 3232396 sensors@optekinc.com www.optekinc.com Page 7 of 8
Infrared Light Emitting Diode & Series Optical Power Ee(mw/cm 2 ) vs Forward Current I F vs Temperature T A Ee Relative Power Output 3.0 2.5 2.0.5.0 0.5 +2 +4 +6 +8 0.0 0.0.2 2.5 3.7 4.9 6. 7.4 8.6 9.8.0 2.3 I F Forward Current (ma) Forward Voltage V F vs Forward Current I F vs Temperature T A 2.2 Typical Forward Voltage 2.8.6.4.2 +2 +4 +6 +8 0.0.2 2.5 3.7 4.9 6. 7.4 8.6 9.8.0 2.3 I F Forward Current (ma) Page 8 of 8 Phone: (972) 3232200 or (800) 344747 FAX: (972) 3232396 sensors@optekinc.com www.optekinc.com