MOSFET 65VCoolMOSªC6PowerTransistor CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos C6seriescombinesthe experienceoftheleadingsjmosfetsupplierwithhighclassinnovation. TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. IPAKSL tab Features ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pb-freeplating,Halogenfreemoldcompound QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD2 andjesd22) Gate Pin 1 Drain Pin 2 Potentialapplications PFCstages,hardswitchingPWMstagesandresonantswitchingPWM stagesfore.g.pcsilverbox,adapter,lcd&pdptv,lighting,server, TelecomandUPS. Source Pin 3 Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj max 7 V RDS(on),max 1.4 Ω Qg,typ 1.5 nc ID,pulse 8.3 A Eoss @ 4V 1.15 µj Body diode di/dt 5 A/µs Type/OrderingCode Package Marking RelatedLinks PG-TO 251-3 65C61K4 see Appendix A 1
TableofContents Description............................................................................. 1 Table of Contents........................................................................ 2 Maximum ratings........................................................................ 3 Thermal characteristics.................................................................... 4 Electrical characteristics................................................................... 5 Electrical characteristics diagrams........................................................... 7 Test Circuits........................................................................... 11 Package Outlines....................................................................... 12 Appendix A............................................................................ 13 Revision History........................................................................ 14 Trademarks........................................................................... 14 Disclaimer............................................................................ 14 2
1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 3.2 A TC=25 C 2. TC=1 C Pulsed drain current 2) ID pulse 8.3 A TC=25 C Avalanche energy, single pulse EAS 26 mj ID=.6A,VDD=5V (see table 1) Avalanche energy, repetitive EAR.1 mj ID=.6A,VDD=5V Avalanche current, repetitive IAR.6 A MOSFET dv/dt ruggedness dv/dt 5 V/ns VDS=...48V Gate source voltage VGS -2 2 V static -3 3 AC (f > 1 Hz) Operating and storage temperature Tj Tstg -55 15 C Continuous diode forward current IS 2.8 A TC=25 C Diode pulse current IS pulse 8.3 A TC=25 C Reverse diode dv/dt 3) dv/dt 15 V/ns VDS=...4V,ISD ID, Tj=25 C Maximum diode commutation speed dif/dt 5 A/µs (see table 8) Power dissipation Ptot 28 W TC=25 C 1) Limited by Tj max. Maximum duty cycle D=.75 2) Pulse width tp limited by Tj max 3) Identical low side and high side switch with identical RG 3
2Thermalcharacteristics Table3ThermalcharacteristicsIPAKSL Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction - case RthJC 4.4 C/W Thermal resistance, junction - ambient 1) RthJA 62 C/W leaded Soldering temperature, wave- & reflowsoldering allowed 35 SMD version, device on PCB, 6cm² cooling area Tsold 26 C 1.6 mm (.63 in.) from case for 1s 1) Device on 4mm*4mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 7µm) for drain connection. PCB is vertical without air stream cooling. 4
3Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 65 V VGS=V,ID=1mA Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS,ID=.1mA Zero gate voltage drain current IDSS 1 µa VDS=65V,VGS=V,Tj=25 C 1 VDS=65V,VGS=V,Tj=15 C Gate-source leakage current IGSS 1 na VGS=2V,VDS=V Drain-source on-state resistance RDS(on) 1.26 1.4 Ω VGS=1V,ID=1.A,Tj=25 C 3.28 VGS=1V,ID=1A,Tj=15 C Gate resistance RG 6.5 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 225 pf VGS=V,VDS=1V,f=1MHz Output capacitance Coss 18 pf Effective output capacitance, energy related 1) Co(er) 1 pf VGS=V,VDS=...48V Effective output capacitance, time related 2) Co(tr) 42 pf ID=constant,VGS=V, VDS=...48V Turn-on delay time td(on) 7.7 ns VDD=4V,VGS=13V,ID=1.5A, RG=1.2Ω Rise time tr 5.9 ns (see table 9) Turn-off delay time td(off) 33 ns Fall time tf 18.2 ns Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 1.3 nc VDD=48V,ID=1.5A, VGS=to1V Gate to drain charge Qgd 5.8 nc Gate charge total Qg 1.5 nc Gate plateau voltage Vplateau 5.4 V 1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from to 8% V(BR)DSS 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from to 8% V(BR)DSS 5
Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=1.5A,Tj=25 C Reverse recovery time trr 2 ns VR=4V,IF=1.5A, dif/dt=1a/µs Reverse recovery charge Qrr.9 µc (see table 8) Peak reverse recovery current Irrm 8 A 6
4Electricalcharacteristicsdiagrams Powerdissipation 3 Max.transientthermalimpedance 1 1 25.5 2 1.2.1 Ptot[W] 15 ZthJC[K/W].5 1 1-1.2.1 single pulse 5 4 8 12 16 TC[ C] Ptot=f(TC) 1-2 1-5 1-4 1-3 1-2 1-1 tp[s] ZthJC=f(tP);parameter:D=tp/T Safeoperatingarea 1 2 Safeoperatingarea 1 2 1 1 1 µs 1 1 1 µs 1 µs 1 µs ID[A] 1 1 µs ID[A] 1 1 µs 1 ms 1 ms 1-1 1 ms 1-1 1 ms DC DC 1-2 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);VGS>7V;TC=25 C;D=;parameter:tp 1-2 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);VGS>7V;TC=8 C;D=;parameter:tp 7
Typ.outputcharacteristics Typ.outputcharacteristics 12 7 1 2 V 1 V 6 2 V 1 V 8 V 8 8 V 5 4 7 V ID[A] 6 7 V ID[A] 3 6 V 4 6 V 2 5.5 V 5 V 4.5 V 5 1 15 2 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 5.5 V 2 5 V 1 4.5 V 5 1 15 2 VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Typ.drain-sourceon-stateresistance 8 Drain-sourceon-stateresistance 4 7 6 3 RDS(on)[Ω] 5 4 5 V 5.5V 6 V 6.5 V 7 V 1 V RDS(on)[Ω] 2 98% typ 3 1 2 1 1 2 3 4 5 6 ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS -6-2 2 6 1 14 18 Tj[ C] RDS(on)=f(Tj);ID=1.A;VGS=1V 8
Typ.transfercharacteristics 1 Typ.gatecharge 1 8 25 C 9 8 7 12 V 48 V 6 6 ID[A] 15 C VGS[V] 5 4 4 3 2 2 1 2 4 6 8 1 VGS[V] ID=f(VGS);VDS=2V;parameter:Tj 5 1 15 Qgate[nC] VGS=f(Qgate);ID=1.5Apulsed;parameter:VDD Avalancheenergy 3 Drain-sourcebreakdownvoltage 75 25 725 7 2 675 EAS[mJ] 15 1 VBR(DSS)[V] 65 625 6 5 575 5 1 15 2 Tj[ C] EAS=f(Tj);ID=.6A;VDD=5V 55-6 -2 2 6 1 14 18 Tj[ C] VBR(DSS)=f(Tj);ID=1.mA 9
Typ.capacitances 1 4 Typ.Cossstoredenergy 2. 1.8 1 3 1.6 1.4 Ciss 1.2 C[pF] 1 2 1 1 Coss Eoss[µJ] 1..8.6.4 Crss.2 1 1 2 3 4 5 6 VDS[V] C=f(VDS);VGS=V;f=1MHz. 1 2 3 4 5 6 VDS[V] Eoss=f(VDS) Forwardcharacteristicsofreversediode 1 1 IF[A] 1 125 C 25 C 1-1..5 1. 1.5 2. VSD[V] IF=f(VSD);parameter:Tj 1
5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V DS R g 2 I F R g 1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform V DS 9% V DS V GS V GS 1% t d(on) t r t d(off) t f t on t off Table1Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V DS I D V DS 11
12 65VCoolMOSªC6PowerTransistor 6PackageOutlines DIM A 2. 1-4-216 ISSUE DATE EUROPEAN PROJECTION.31.18.18.236.26.181.254.118.87.25.35.26.198 MILLIMETERS 4.6 3..9 3 2.28 4.56 MIN.8.46.65 6..46 6.45 2.2.64 5.4 5.1 1.25 3.6.89 6.7.89 6.22.59 1.15 1.14 2.35 MAX 5.5 5.55 MIN.21 3.9.18.49.142 INCHES MAX.23.45.245.23.33.93.44.264.217.219 2. SCALE 4mm DOCUMENT NO. Z8B3329 REVISION 7.31.8 1.2.47 A1 b b2 b4 c c2 D D1 E E1 e e1 N L L1 L2 5.2 Figure1OutlinePG-TO251-3,dimensionsinmm/inches
7AppendixA Table11RelatedLinks IFXC6ProductBrief:www.infineon.com IFXC6Portfolio:www.infineon.com IFXCoolMOSWebpage:www.infineon.com IFXDesignTools:www.infineon.com 13
RevisionHistory Revision:217-7-25,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision).9 211-12-19 Release of target datasheet 2. 212-7-6 Release of final version 2.1 217-7-25 Updated package drawing on page 12 TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DI-POL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,i-Wafer,MIPAQ,ModSTACK,my-d,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PRO-SIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust215 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 217InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 14