General Description The MDIBN7C use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIBN7C is suitable device for SMPS, HID and general purpose applications. MDIBN7C N-Channel MOSFET 7V, 5.A,.8Ω Features V DS = 7V = 5.A R DS(ON).8Ω Applications @V GS = V @V GS = V Power Supply PFC High Current, High Speed Switching MDIBN7C N-channel MOSFET 7V G D S TO-5 (IPAK) Absolute Maximum Ratings (Ta = 5 o C) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 7 V Gate-Source Voltage V GSS ±3 V Continuous Drain Current T C =5 o C 5. A T C = o C 3.5 A Pulsed Drain Current () M A Power Dissipation T C =5 o C P D W Derate above 5 o C.89 W/ o C Peak Diode Recovery dv/dt (3) dv/dt.5 V/ns Repetitive Pulse Avalanche Energy () E AR. mj Single Pulse Avalanche Energy () E AS 8 mj Junction and Storage Range T J, T stg -55~5 o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient () R θja o C/W Thermal Resistance, Junction-to-Case () R θjc. o C/W
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDIBN7CTH -55~5 o C TO-5 (IPAK) Tube Halogen Free Electrical Characteristics (Ta =5 o C) Static Characteristics Characteristics Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS = 5µA, V GS = V 7 - - Gate Threshold Voltage V GS(th) V DS = V GS, = 5µA. -. Drain Cut-Off Current SS V DS = 7V, V GS = V - - µa Gate Leakage Current I GSS V GS = ±3V, V DS = V - - na Drain-Source ON Resistance R DS(ON) V GS = V, =.5A.8.8 Ω Forward Transconductance g fs V DS = 3V, =.5A - 7. - S Dynamic Characteristics Total Gate Charge Q g - 8. Gate-Source Charge Q gs V DS = 5V, =.A, V GS = V - 3.5 - Gate-Drain Charge Q gd - 7 - Input Capacitance C iss - 893 - Reverse Transfer Capacitance C rss V DS = 5V, V GS = V, f =.MHz - 8.8 - Output Capacitance C oss - 95 - Turn-On Delay Time t d(on) - 5. - Rise Time t r V GS = V, V DS = 35V, =.A, - 3.3 - Turn-Off Delay Time t d(off) R G = 5Ω - 8 - Fall Time t f - - Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current I S - - 5. A Source-Drain Diode Forward Voltage V SD I S = 5., V GS = V -. V Body Diode Reverse Recovery Time t rr - 3 - ns I F =.A, di/dt = A/µs Body Diode Reverse Recovery Charge Q rr -.5 - µc V nc pf ns MDIBN7C N-channel MOSFET 7V Note :. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 5 C. Pulse test: pulse width 3us, duty cycle %, pulse width limited by junction temperature T J(MAX) =5 C 3. I SD 5.A, di/dt A/us, V DD BVdss, R g =5Ω, Starting T J =5 C. L=3.8mH, I AS =5.A, V DD =5V, R g =5Ω, Starting T J =5 C
,Drain Current [A] 9 8 7 5 3 V gs =.5V =5.V =5.5V =.V =.5V =7.V =8.V =.V =5.V Notes. 5 μs Pulse Test. T C =5 5 5 V DS,Drain-Source Voltage [V] Fig. On-Region Characteristics R DS(ON) [Ω ]...8.... V GS =.V V GS =V.8 3 5 7 8 9,Drain Current [A] Fig. On-Resistance Variation with Drain Current and Gate Voltage MDIBN7C N-channel MOSFET 7V 3.. R DS(ON), (Normalized) Drain-Source On-Resistance.5..5..5. V GS = V. =.5A BV DSS, (Normalized) Drain-Source Breakdown Voltage...9. V GS = V. = 5 μa. -5 5 5 T J, Junction [ o C].8-5 5 5 T J, Junction [ o C] Fig.3 On-Resistance Variation with Fig. Breakdown Voltage Variation vs. 5 * Notes ;. Vds=3V. V GS = V.5µs Pulse test (A) 5 5-55 R Reverse Drain Current [A] 5 5 3 5 7 V GS [V] Fig.5 Transfer Characteristics...8.. V SD, Source-Drain Voltage [V] Fig. Body Diode Forward Voltage Variation with Source Current and 3
V GS, Gate-Source Voltage [V] 8 Note : I =.A D 8 8 Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics V 35V 5V Capacitance [pf] 8 C iss C rss C oss V DS, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Fig.8 Capacitance Characteristics Notes ;. V GS = V. f = MHz MDIBN7C N-channel MOSFET 7V, Drain Current [A] - - Operation in This Area is Limited by R DS(on) Single Pulse T J =Max rated T C =5 - V DS, Drain-Source Voltage [V] DC ms ms Fig.9 Maximum Safe Operating Area µs ms µs Power (W) 5 9 3 single Pulse R thjc =. /W T C = 5 E-5 E- E-3.. Pulse Width (s) Fig. Single Pulse Maximum Power Dissipation 8 7 D=.5 Z θ JC (t), Thermal Response -...5.. Duty Factor, D=t /t, Drain Current [A] 5 3 single pulse PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =. /W - -5 - -3 - - t, Rectangular Pulse Duration [sec] Fig. Transient Thermal Response Curve 5 5 75 5 5 T C, Case [ ] Fig.5 Maximum Drain Current vs. Case
Physical Dimension TO-5 (IPAK) Dimensions are in millimeters, unless otherwise specified MDIBN7C N-channel MOSFET 7V 5
MDIBN7C N-channel MOSFET 7V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd.