P- and N-Channel 4 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 4. 6 at V GS = V 6.7.24 at V GS = 4.5 V 5.8 5. P-Channel -4. 2 at V GS = - V - 6..52 at V GS = - 4.5 V - 5.5. FEATURES Halogen-free TrenchFET Power MOSFET % R g Tested % UIS Tested APPLICATIONS Backlight Inverter for LCD Display Full Bridge Converter RoHS COMPLIANT SO-8 S 8 D S D G 2 7 D S 2 3 6 D 2 G 2 4 5 D 2 G G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T A = 25 C, unless otherwise noted S N-Channel MOSFET Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS 4-4 V Gate-Source Voltage V GS ± 2 T C = 25 C 6.7-6. T C = 7 C 5.4-4.7 Continuous Drain Current (T J = 5 C) I D T A = 25 C 5.6 b, c - 4.7 b, c T A = 7 C 4.4 b, c - 3.7 b, c Pulsed Drain Current I DM 2-2 A T C = 25 C 2.5-2.5 Source-Drain Current Diode Current I S T A = 25 C.6 b, c -.6 b, c Pulsed Source-Drain Current I SM 2-2 Single Pulse Avalanche Current I AS 7 - L = mh Single Pulse Avalanche Energy E AS 2.45 5 mj T C = 25 C 3. 3. T C = 7 C.9 2 Maximum Power Dissipation P D W T A = 25 C 2. b, c 2. b, c T A = 7 C.25 b, c.25 b, c Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Typ. Max. Maximum Junction-to-Ambient b, d t s R thja 54 64 49 62.5 Notes: a. Based on T C = 25 C. b. Surface Mounted on " x " FR4 board. c. t = s. d. Maximum under Steady State conditions is 2 C/W. N-Channel P-Channel Maximum Junction-to-Foot (Drain) Steady State R thjf 33 42 3 4 Unit C/W
82 SPECIFICATIONS T J = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. a Max. Unit Static V GS = V, I D = 25 μa N-Ch 3 Drain-Source Breakdown Voltage V DS V GS = V, I D = - 25 μa P-Ch - 3 I D = 25 μa N-Ch 44 V DS Temperature Coefficient V DS /T J I D = - 25 μa P-Ch - 42 I D = 25 μa N-Ch - 5.5 V GS(th) Temperature Coefficient V GS(th) /T J II D = - 25 μa P-Ch 4.6 V DS = V GS, I D = 25 μa N-Ch.4 3. Gate Threshold Voltage V GS(th) V DS = V GS, I D = - 25 μa P-Ch -.2-2.5 N-Ch Gate-Body Leakage I GSS V DS = V, V GS = ± 2 V P-Ch - V DS = 3 V, V GS = V N-Ch V DS = - 3 V, V GS = V P-Ch - Zero Gate Voltage Drain Current I DSS V DS = 3 V, V GS = V, T J = 55 C N-Ch V DS = - 3 V, V GS = V, T J = 55 C P-Ch - V DS = 5 V, V GS = V On-State Drain Current b N-Ch I D(on) V DS = - 5 V, V GS = - V P-Ch - V GS = V, I D = A N-Ch.6. 9 V GS = - V, I D = - A Drain-Source On-State Resistance b P-Ch.32.39 R DS(on) V GS = 4.5 V, I D = A N-Ch.24. 8 V GS = - 4.5 V, I D = - A P-Ch. 2.58 V DS = 5 V, I D = 5 A Forward Transconductance b N-Ch 22 g fs V DS = - 5 V, I D = - 5 A P-Ch 4 Dynamic a N-Ch 64 Input Capacitance C iss N-Channel P-Ch 97 V DS = 2 V, V GS = V, f = MHz N-Ch 73 Output Capacitance C oss P-Ch 2 P-Channel V DS = - 2 V, V GS = V, f = MHz N-Ch 4 Reverse Transfer Capacitance C rss P-Ch 95 V DS = 2 V, V GS = V, I D = 5 A N-Ch.7 2 V Total Gate Charge Q DS = - 2 V, V GS = - V, I D = - 5 A P-Ch 25 38 g N-Ch 5.3 9 N-Channel P-Ch.8 8 V DS = 2 V, V GS = 4.5 V I D = 5 A N-Ch.9 Gate-Source Charge Q gs P-Channel P-Ch 3. V DS = - 2 V, V GS = - 4.5 V, I D = - 5 A N-Ch.7 Gate-Drain Charge Q gd P-Ch 5.2 N-Ch.5 2.2 4.5 Gate Resistance R g f = MHz P-Ch. 5.5 V mv/ C V na μa A S pf nc 2
SPECIFICATIONS T J = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. a Max. Unit Dynamic a N-Ch 7 4 Turn-On Delay Time t d(on) N-Channel P-Ch 7 4 V DD = 2 V, R L = 4 N-Ch 2 Rise Time t r I D 5 A, V GEN = V, R g = P-Ch 2 24 Turn-Off Delay Time t d(off) P-Channel N-Ch 5 3 V DD = - 2 V, R L = 4 P-Ch 3 6 I D - 5 A, V GEN = - V, R g = N-Ch 9 8 Fall Time t f P-Ch 9 8 ns N-Ch 6 3 Turn-On Delay Time t d(on) N-Channel P-Ch 44 8 V DD = 2 V, R L = 4 N-Ch 7 3 Rise Time t r I D 5 A, V GEN = 4.5 V, R g = P-Ch 33 5 N-Ch 6 3 Turn-Off Delay Time t d(off) P-Channel V DD = - 2 V, R L = 4 P-Ch 28 6 Fall Time t f I D - 5 A, V GEN = - 4.5 V, R g = N-Ch 2 P-Ch 3 25 Drain-Source Body Diode Characteristics N-Ch 2.5 Continuous Source-Drain Diode Current I S T C = 25 C P-Ch - 2.5 Pulse Diode Forward Current a N-Ch 2 I SM P-Ch - 2 A I S =.6 A N-Ch.78.2 Body Diode Voltage V SD I S = -.6 A P-Ch -.76 -.2 V N-Ch 9 3 Body Diode Reverse Recovery Time t rr P-Ch 26 5 ns N-Channel N-Ch 4 25 Body Diode Reverse Recovery Charge Q rr I F = 2 A, di/dt = A/μs, T J = 25 C P-Ch 8.5 35 nc N-Ch 3 Reverse Recovery Fall Time t a P-Channel I F = - 2 A, di/dt = - A/μs, T J = 25 C P-Ch 2.5 N-Ch 6 Reverse Recovery Rise Time t b P-Ch 3.5 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 3 μs, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 3
N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 3 24 V GS =thru5v 4V 5 4 8 2 3 2 T C =25 C 6 3V..5..5 2. 2.5 V DS - Drain-to-Source Voltage (V) Output Characteristics. T C = 25 C T C = - 55 C 2 3 4 5 V GS - Gate-to-Source Voltage (V) Transfer Characteristics 8 C iss - On-Resistance (Ω) R DS(on).... V GS =4.5V V GS =V C - Capacitance (pf) 64 48 32 6 C oss. 6 2 8 24 3 On-Resistance vs. Drain Current C rss 6 2 8 24 3 V DS - Drain-to-Source Voltage (V) Capacitance.8 - Gate-to-Source Voltage (V) 8 6 4 I D =5A V DS =2V V DS =V V DS =3V - On-Resistance R DS(on) (Normalized).6.4.2. I D =5A V GS =V V GS =4.5V V GS 2.8. 2.5 5. 7.5. 2.5 Q g - Total Gate Charge (nc) Gate Charge.6-5 - 25 25 5 75 25 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature 4
N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted.2 I S - Source Current (A).. T J = 5 C T J = 25 C - On-Resistance (Ω) R DS(on).6.2.8.4 I D =5A T A = 25 C...2.4.6.8..2 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage.4 T A =25 C 2 4 6 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 8.2 I D = 25 μa 64 Variance (V) V GS(th). -.2 -.4 I D =5mA Power (W) 48 32 -.6 6 -.8-5 - 25 25 5 75 25 5 T J - Temperature ( C) Threshold Voltage... Time (s) Single Pulse Power, Junction-to-Ambient Limited by R DS(on) * ms ms ms. s s T A =25 C Single Pulse DC.. V DS - Drain-to-Source Voltage (V) *V GS > minimum V GS at which r DS(on) is specified Safe Operating Area, Junction-to-Ambient 5
N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 8 6 5 4 2 25 5 75 25 5 T C - Case Temperature ( C) Current Derating* 4..5 3.2.2 Power (W) 2.4.6 Power (W).9.6.8.3 25 5 75 25 5. 25 5 75 25 5 T C - Case Temperature ( C) Power Derating, Junction-to-Foot T A - Ambient Temperature ( C) Power Derating, Junction-to-Ambient *The power dissipation P D is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 6
N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted Duty Cycle =.5 Normalized Effective Transient Thermal Impedance.2. Notes:..5 P DM t.2 t 2 t. Duty Cycle, D = t 2 2. Per Unit Base = R thja = 2 C/W 3. T JM - T A =P DM Z (t) thja Single Pulse 4. Surface Mounted. -4-3 -2 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Normalized Effective Transient Thermal Impedance. Duty Cycle =.5.2..5.2. -4 Single Pulse -3-2 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot - 7
P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 3 5 V GS =thru5v 24 V GS =4V 8 2 6 V GS =3V..5..5 2. 2.5 4 3 2 T C = 25 C T C = 25 C T C = - 55 C 2 3 4 5 V DS - Drain-to-Source Voltage (V) Output Characteristics V GS -Gate-to-Source Voltage (V) Transfer Characteristics. 6 - On-Resistance (Ω) R DS(on).8.6.4.2 V GS =4.5V V GS =V C - Capacitance (pf) 28 96 64 32 C oss C iss C rss. 6 2 8 24 3 On-Resistance vs. Drain Current. 2.4 4.8 7.2 9.6 2. V DS - Drain-to-Source Voltage (V) Capacitance.8 - Gate-to-Source Voltage (V) 8 6 4 I D =5A V DS =V V DS =2V V DS =3V R DS(on) - On-Resistance (Normalized).6.4.2. I D =5A V GS =V V GS =4.5V V GS 2.8. 5..2 5.3 2.4 25.5 Q g - Total Gate Charge (nc) Gate Charge.6-5 - 25 25 5 75 25 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature 8
P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted.2 I D =5A - Source Current (A) I S.. T J = 5 C T J = 25 C - On-Resistance (Ω) R DS(on).6.2.8.4 T J = 25 C T J = 25 C...2.4.6.8..2 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage. 2 3 4 5 6 7 8 9 V GS -Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.8 5.6 I D = 25 μa 4 Variance (V) V GS(th).4.2. I D =ma Power (W) 3 2 -.2 -.4-5 - 25 25 5 75 25 5 T J - Temperature ( C) Threshold Voltage... Time (s) Single Pulse Power, Junction-to-Ambient Limited by R DS(on)* - Drain Current (A) ms ms I D... T C =25 C Single Pulse. ms s s DC V DS - Drain-to-Source Voltage (V) *V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient 9
P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 7. 5.6 4.2 2.8.4. 25 5 75 25 5 T C - Case Temperature ( C) Current Derating* 4..5 3.2.2 Power (W) 2.4.6 Power (W).9.6.8.3. 25 5 75 25 5. 25 5 75 25 5 T C - Case Temperature ( C) T A - Ambient Temperature ( C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient *The power dissipation P D is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted Duty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2 Single Pulse Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P DM t t 2 t. Duty Cycle, D = t 2 2. Per Unit Base = R thja = 2 C/W 3. T JM -T A =P DM Z (t) thja. 4. Surface Mounted -4-3 -2 - Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance. Duty Cycle =.5.2..5.2. -4 Single Pulse -3-2 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot -
SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-2 8 7 6 5 E H 2 3 4 S D A.25 mm (Gage Plane) h x 45 C All Leads e B A L q. mm.4" MILLIMETERS INCHES DIM Min Max Min Max A.35.75.53.69 A..2.4.8 B.35.5.4.2 C.9.25.75. D 4.8 5..89.96 E 3.8 4..5.57 e.27 BSC.5 BSC H 5.8 6.2.228.244 h.25.5..2 L.5.93.2.37 q 8 8 S.44.64.8.26 ECN: C-6527-Rev. I, -Sep-6 DWG: 5498
RECOMMENDED MINIMUM PADS FOR SO-8.72 (4.369).28 (.7).47 (.94).246 (6.248).52 (3.86).22 (.559).5 (.27) Recommended Minimum Pads Dimensions in Inches/(mm)
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