M E N FDP8442 N-Channel PowerTrench MOSFET 4V, 8A, 3.mΩ Features Applications June 27 Typ r DS(on) = 2.3mΩ at V GS = V, I D = 8A Automotive Engine Control Typ Q g() = 8nC at V GS = V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Q rr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter / Alternator Qualified to AEC Q Distributed Power Architectures and VRMs RoHS Compliant Primary Switch for 2V Systems L E A D F R E E I MP L E TA TIO N 27 Fairchild Semiconductor Corporation
MOSFET Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain to Source Voltage 4 V V GS Gate to Source Voltage ±2 V I D Drain Current Continuous (T amb = 25 o C, V GS = V, with R θja = 62 o C/W) 23 Drain Current Continuous (T C <58 o C, V GS = V) 8 Pulsed See Figure 4 E AS Single Pulse Avalanche Energy (Note ) 72 mj P D Power Dissipation 254 W Derate above 25 o C.7 W/ o C T J, T STG Operating and Storage Temperature -55 to +75 o C Thermal Characteristics R θjc Thermal Resistance Junction to Case.59 o C/W R θja Thermal Resistance Junction to Ambient (Note 2) 62 o C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDP8442 FDP8442 TO-22AB Tube N/A 5 units Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics A B VDSS Drain to Source Breakdown Voltage I D = 25µA, V GS = V 4 - - V I DSS Zero Gate Voltage Drain Current V DS = 32V V GS = V - - T J = 5 C - - 25 I GSS Gate to Source Leakage Current V GS = ±2V - - ± na On Characteristics V GS(th) Gate to Source Threshold Voltage V DS = V GS, I D = 25µA 2 2.9 4 V rds( on) Drain to Source On Resistance Dynamic Characteristics I D = 8A, V GS = V - 2.3 3. I D = 8A, V GS = V, T J = 75 C - 3.9 5.3 C iss Input Capacitance - 22 - pf V DS = 25V, V GS = V, C oss Output Capacitance - 4 - pf f = MHz C rss Reverse Transfer Capacitance - 64 - pf R G Gate Resistance V GS =.5V, f = MHz -. - Ω Q g(tot) Total Gate Charge at V V GS = to V Q g(th) Threshold Gate Charge V GS = to 2V V DD = 2V - 23 3 nc Q gs Gate to Source Gate Charge I D = 8A - 49 - nc Q gs2 Gate Charge Threshold to Plateau I g = ma - 26 - nc µa mω - 8 235 nc Q gd Gate to Drain Miller Charge - 4 - nc 2
Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t (on) Turn-On Time - - 62 ns t d(on) Turn-On Delay Time - 9.5 - ns t r Turn-On Rise Time V DD = 2V, I D = 8A - 9.3 - ns t d(off) Turn-Off Delay Time V GS = V, R GS = 2Ω - 57 - ns t f Turn-Off Fall Time - 7.2 - ns t off Turn-Off Time - - 8 ns Drain-Source Diode Characteristics V SD Source to Drain Diode Voltage I SD = 8A -.9.25 V I SD = 4A -.8. V t rr Reverse Recovery Time I F = 75A, di/dt = A/µs - 49 64 ns Q rr Reverse Recovery Charge I F = 75A, di/dt = A/µs - 7 9 nc Notes: : Starting T J = 25 o C, L =.35mH, I AS = 64A 2: Pulse width = s. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9 and QS9 quality systems certification. 3
Typical Characteristics POWER DISSIPATION MULIPLIER.2..8.6.4.2. 25 5 75 25 5 75 T C, CASE TEMPERATURE( o C) Figure. Normalized Power Dissipation vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER 3 25 2 5 5 Figure 2. CURRENT LIMITED BY PACKAGE 25 5 75 25 5 75 T C, CASE TEMPERATURE( o C) V GS = V Maximum Continuous Drain Current vs Case Temperature NORMALIZED THERMAL IMPEDANCE, Z θjc.. D =.5.2..5.2. t t 2 NOTES: DUTY FACTOR: D = t /t 2 PEAK T J = P DM x Z θjc x R θjc + T C SINGLE PULSE E-3-5 -4-3 -2 - t, RECTANGULAR PULSE DURATION(s) Figure 3. Normalized Maximum Transient Thermal Impedance P DM IDM, PEAK CURRENT (A) V GS = V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION T C = 25 o C FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I = I 75 - T C 25 5 SINGLE PULSE -5-4 -3-2 - t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability 4
Typical Characteristics 4. DC V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. 6 2 8 4 LIMITED BY PACKAGE OPERATION IN THIS AREA MAY BE LIMITED BY rds(on) SINGLE PULSE TJ = MAX RATED TC = 25 o C us us ms ms Forward Bias Safe Operating Area PULSE DURATION = 8µs DUTY CYCLE =.5% MAX V DD = 5V T J = 75 o C T J = 25 o C T J = -55 o C IAS, AVALANCHE CURRENT (A) 5 If R = t AV = (L)(I AS )/(.3*RATED BV DSS - V DD ) If R t AV = (L/R)ln[(I AS *R)/(.3*RATED BV DSS - V DD ) +] STARTING T J = 5 o C STARTING T J = 25 o C.. t AV, TIME IN AVALANCHE (ms) 5 NOTE: Refer to Fairchild Application Notes AN754 and AN755 Figure 6. Unclamped Inductive Switching Capability 6 2 8 4 V GS = 5V V GS = V PULSE DURATION = 8µs DUTY CYCLE =.5% MAX V GS = 4.5V V GS = 4V 2. 2.5 3. 3.5 4. 4.5 5. V GS, GATE TO SOURCE VOLTAGE (V) 2 3 4 5 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) 5 4 3 2 T J = 25 o C T J = 75 o C PULSE DURATION = 8µs DUTY CYCLE =.5% MAX 4 5 6 7 8 9 V GS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE.8.6.4.2. PULSE DURATION = 8µs DUTY CYCLE =.5% MAX.8 I D = 8A V GS = V.6-8 -4 4 8 2 6 2 T J, JUNCTION TEMPERATURE( o C) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage Figure. Normalized Drain to Source On Resistance vs Junction Temperature 5
Typical Characteristics NORMALIZED GATE THRESHOLD VOLTAGE.2...9.8.7.6.5-8 -4 4 8 2 6 2 T J, JUNCTION TEMPERATURE( o C) Figure. CAPACITANCE (pf) 4 V GS = V DS I D = 25µA Normalized Gate Threshold Voltage vs Junction Temperature C rss C oss C iss f = MHz V GS = V. V DS, DRAIN TO SOURCE VOLTAGE (V) 5 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE..5..95 I D = 25µA.9-8 -4 4 8 2 6 2 T J, JUNCTION TEMPERATURE ( o C) Figure 2. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) 8 6 4 2 ID = 8A V DD = 5V V DD = 2V V DD = 25V 5 5 2 Q g, GATE CHARGE(nC) Figure 3. Capacitance vs Drain to Source Voltage Figure 4. Gate Charge vs Gate to Source Voltage 6
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