General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. MDIN N-Channel MOSFET V,.5A,.Ω Features V DS = V V DS = V @ T jmax =.5A @ V GS = V R DS(ON).Ω @ V GS = V Applications Power Supply PFC High Current, High Speed Switching D G D S I-PAK (TO-5) G Absolute Maximum Ratings (Ta = 5 o C) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS V Drain-Source Voltage @ Tjmax V DSS @ T jmax V Gate-Source Voltage V GSS ±3 V Continuous Drain Current T C=5 o C.5 A T C= o C.8 A Pulsed Drain Current () M 8 A Power Dissipation T C=5 o C 73 Derate above 5 o C Repetitive Avalanche Energy () E AR 7.3 mj Peak Diode Recovery dv/dt (3) dv/dt.5 V/ns Single Pulse Avalanche Energy () E AS mj Junction and Storage Range T J, T stg -55~5 * Id limited by maximum junction temperature P D.59 S W W/ o C o C Thermal Characteristics Characteristics Symbol MDIN Unit Thermal Resistance, Junction-to-Ambient () R θja Thermal Resistance, Junction-to-Case () R θjc.7 o C/W
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDINTH -55~5 o C I-pak Tube Halogen Free Electrical Characteristics (Ta =5 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV DSS = 5µA, V GS = V - - Gate Threshold Voltage V GS(th) V DS = V GS, = 5µA 3. - 5. Drain Cut-Off Current SS V DS = V, V GS = V - - µa Gate Leakage Current I GSS V GS = ±3V, V DS = V - - na Drain-Source ON Resistance R DS(ON) V GS = V, =.5A.. Ω Forward Transconductance g fs V DS = 3V, =.5A - 5 - S Dynamic Characteristics Total Gate Charge Q g - 5.3 Gate-Source Charge Q gs V DS = 8V, =.A, V GS = V (3) -. Gate-Drain Charge - 5.9 Q gd Input Capacitance C iss - 5 Reverse Transfer Capacitance C rss V DS = 5V, V GS = V, f =.MHz -.5 Output Capacitance C oss - 8 Turn-On Delay Time t d(on) -.7 Rise Time t r V GS = V, V DS = 3V, =.A, -. Turn-Off Delay Time t d(off) R G = 5Ω (3) - 3. Fall Time Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge t f - I S - - A V SD I S =.A, V GS = V -. V I F =.A, dl/dt = A/µs (3) t rr - 75 ns -. µc Q rr V nc pf ns Note :. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 5 C.. Pulse test: pulse width 3us, duty cycle %, pulse width limited by junction temperature T J(MAX)=5 C. 3. I SD.A, di/dt A/us, V DD=5V, R g =5Ω, Starting T J=5 C. L=7.mH, I AS=.A, V DD=5V, R g =5Ω, Starting T J=5 C,
,Drain Current [A] 8 7 5 3 V gs =5.5V =.V =.5V =7.V =8.V =.V =5.V 5 5 V DS,Drain-Source Voltage [V] Fig. On-Region Characteristics Notes. 5 μs Pulse Test. T C =5 R DS(ON) [Ω ] 3.5 3..5..5. V GS =.V V GS =V.5 8,Drain Current [A] Fig. On-Resistance Variation with Drain Current and Gate Voltage 3.. R DS(ON), (Normalized) Drain-Source On-Resistance.5..5..5. V GS = V. =.3A BV DSS, (Normalized) Drain-Source Breakdown Voltage...9. V GS = V. = 5 μa. -5 5 5 T J, Junction [ o C] Fig.3 On-Resistance Variation with.8-5 5 5 T J, Junction [ o C] Fig. Breakdown Voltage Variation vs. (A) * Notes ;. Vds=3V 5 5-55 R Reverse Drain Current [A]. V GS = V.5µs Pulse test 5 5. 8 V GS [V] Fig.5 Transfer Characteristics......8.. V SD, Source-Drain Voltage [V] Fig. Body Diode Forward Voltage Variation with Source Current and 3
V GS, Gate-Source Voltage [V] 8 Note : I =.A D 8 Q G, Total Gate Charge [nc] V 3V 8V Capacitance [pf] 8 C iss C rss C oss V DS, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes ;. V GS = V. f = MHz Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics, Drain Current [A] - Single Pulse T J =Max rated T C =5 Operation in This Area is Limited by R DS(on) DC µs ms ms ms µs Z θ JC (t), Thermal Response - D=.5...5.. single pulse Duty Factor, D=t /t PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =.85 /W - - V DS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area - -5 - -3 - - t, Rectangular Pulse Duration [sec] Fig. Transient Thermal Response Curve 8 Power (W) single Pulse R thjc =.85 /W T C = 5, Drain Current [A] E-5 E- E-3.. Pulse Width (s) Fig. Single Pulse Maximum Power Dissipation 5 5 75 5 5 T C, Case [ ] Fig. Maximum Drain Current vs. Case
Physical Dimension TO-5 (IPAK) Dimensions are in millimeters, unless otherwise specified 5
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