FQD18N20V2 N-Channel QFET MOSFET 200 V, 15 A, 140 mω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features January 2014 15 A, 200 V, R DS(on) = 140 mω (Max.) @ = 10 V, I D = 7.5 A Low Gate Charge (Typ. 20 nc) Low Crss (Typ. 25 pf) 100% Avalanche Tested D D G S D-PAK G S Absolute Maximum Ratings T C = 25 C unless otherwise noted. Symbol Parameter FQD18N20V2TM Unit S Drain-Source Voltage 200 V I D Drain Current - Continuous (T C = 25 C) 15 A Thermal Characteristics - Continuous (T C = 100 C) 9.75 A I DM Drain Current - Pulsed (Note 1) 60 A S Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 340 mj I AR Avalanche Current (Note 1) 15 A E AR Repetitive Avalanche Energy (Note 1) 8.3 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns P D Power Dissipation (T A = 25 C) * 2.5 W Power Dissipation (T C = 25 C) 83 W - Derate above 25 C 0.67 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum Lead Lemperature for Loldering, 1/8" from Case for 5 Seconds. 300 C Symbol Parameter FQD18N20V2TM Unit R JC Thermal Resistance, Junction to Case, Max. 1.5 R JA Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 Thermal Resistance, Junction to Ambient (*1 in 2 Pad of 2-oz Copper), Max. 50 o C/W 1
Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FQD18N20V2TM DV218N20 DPAK Tape and Reel 330 mm 16 mm 2500 units Electrical Characteristics T C = 25 C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = 250 µa 200 -- -- V BS Breakdown Voltage Temperature / T J Coefficient I D = 250 µa, Referenced to 25 C -- 0.25 -- V/ C I DSS = 200 V, = 0 V -- -- 1 µa Zero Gate Voltage Drain Current = 160 V, T C = 125 C -- -- 10 µa I GSSF Gate-Body Leakage Current, Forward = 30 V, = 0 V -- -- 100 na I GSSR Gate-Body Leakage Current, Reverse = -30 V, = 0 V -- -- -100 na On Characteristics (th) Gate Threshold Voltage =, I D = 250 µa 3.0 -- 5.0 V R DS(on) Static Drain-Source V On-Resistance GS = 10 V, I D = 7.5 A -- 0.12 0.14 Ω g FS Forward Transconductance = 40 V, I D = 7.5 A -- 11 -- S Dynamic Characteristics C iss Input Capacitance = 25 V, = 0 V, -- 830 1080 pf C oss Output Capacitance f = 1.0 MHz -- 200 260 pf C rss Reverse Transfer Capacitance -- 25 33 pf C oss Output Capacitance = 160 V, = 0 V, f = 1.0 MHz -- 70 -- pf C oss eff. Effective Output Capacitance = 0V to 160 V, = 0 V -- 135 -- pf Switching Characteristics t d(on) Turn-On Delay Time -- 16 40 ns = 100 V, I D = 18 A, t r Turn-On Rise Time R G = 25 Ω -- 133 275 ns t d(off) Turn-Off Delay Time -- 38 85 ns t f Turn-Off Fall Time (Note 4) -- 62 135 ns Q g Total Gate Charge = 160 V, I D = 18 A, -- 20 26 nc Q gs Gate-Source Charge = 10 V -- 5.6 -- nc Q gd Gate-Drain Charge (Note 4) -- 10 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 15 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A V SD Drain-Source Diode Forward Voltage = 0 V, I S = 15 A -- -- 1.5 V t rr Reverse Recovery Time = 0 V, I S = 18 A, -- 158 -- ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs -- 1.0 -- µc Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 1.58 mh, I AS = 18 A, = 50 V, R G = 25 Ω, starting T J = 25 C. 3. I SD 18 A, di/dt 200 A/µs, BS, starting T J = 25 C. 4. Essentially independent of operating temperature. 2
Typical Characteristics I D, Drain Current [A] Top : 15.0 V 10.0 V 10 1 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1. 250μ s Pulse Test 2. T C = 25 10 1, Drain-Source Voltage [V] 0.5 Figure 1. On-Region Characteristics I D, Drain Current [A] 10 1 150 25-55 1. = 40V 2. 250μ s Pulse Test 4 5 6 7 8 9 10, Gate-Source Voltage [V] Figure 2. Transfer Characteristics R DS(ON) [Ω ], Drain-Source On-Resistance 0.4 0.3 0.2 0.1 = 10V = 20V 0.0 0 10 20 30 40 50 60 I D, Drain Current [A] Note : T J = 25 I DR, Reverse Drain Current [A] 10 1 150 25 1. = 0V 2. 250μ s Pulse Test 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V SD, Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance [pf] 2500 2000 1500 1000 500 C rss C oss 0 10 1 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd C iss, Drain-Source Voltage [V] 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] 12 10 8 6 4 2 = 40V = 100V = 160V Note : I D = 18A 0 0 5 10 15 20 25 Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3
Typical Characteristics BS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 (Continued) 0.8-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] Operation in This Area 1. = 0 V 2. I D = 250 μ A Figure 7. Breakdown Voltage Variation vs. Temperature R DS(ON), (Normalized) Drain-Source On-Resistance 3.0 2.5 2.0 1.5 1.0 0.5 1. = 10 V 2. I D = 7.5 A 0.0-100 -50 0 50 100 150 200 20 T J, Junction Temperature [ o C] Figure 8. On-Resistance Variation vs. Temperature 10 2 is Limited by R DS(on) I D, Drain Current [A] 10 1 1. T C = 25 o C 100 us 1 ms 10 ms DC I D, Drain Current [A] 15 10 5 2. T J = 150 o C 3. Single Pulse 10 1 10 2, Drain-Source Voltage [V] 0 25 50 75 100 125 150 T C, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Z JC (t), Thermal Response [ o C/W] 10-2 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 1. Z θ JC (t) = 1.5 /W M a x. 2. D uty F a cto r, D = t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t 2 10-5 10-4 10-3 10-2 10 1 t 1, Square W ave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve 4
12V 200nF I G = const. 3mA 50KΩ Same Type as DUT 300nF V GS 10V Q g Q gs Q gd DUT Charge Figure 12. Gate Charge Test Circuit & Waveform R L 90% R G V 10 DUT 10% t d(on) t r t d(off) tf t on t off Figure 13. Resistive Switching Test Circuit & Waveforms L E AS = ---- 1 LI 2 2 AS BS -------------------- BS - I D BS I AS R G I D (t) V 10 DUT (t) t p t p Time Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms 5
R G DUT I SD Driver + _ Same Type as DUT L dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 10V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms 6
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