Complementary N- and P-Channel V (D-S) MOSFET Si6CX PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.).396 at V GS =.5 V.5 N-Channel.56 at V GS =.5 V..56 at V GS =.8 V..75 nc.76 at V GS =.5 V.5.756 at V GS = -.5 V -.35 P-Channel -.38 at V GS = -.5 V -.35. at V GS = -.8 V -. nc. at V GS = -.5 V -.5 FEATURES Halogen-free According to IEC 69-- Definition TrenchFET Power MOSFETs High-Side Switching Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Typical ESD Protection: N-Channel 5 V P-Channel V (HBM) % R g Tested Compliant to RoHS Directive /95/EC APPLICATIONS Load Switch, Small Signal Switches and Level-Shift Switches - Battery Operated Systems - Portable SOT-563 SC-89 D S S 6 D G G 5 G Marking Code: 5 G D 3 S Top View Ordering Information: Si6CX-T-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T A = 5 C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS - V Gate-Source Voltage V GS ± 8 T A = 5 C.6 a, b -.6 a, b Continuous Drain Current (T J = 5 C) I D T A = 7 C.9 a, b -.9 a, b A Pulsed Drain Current (t = 3 µs) I DM -.5 Source Drain Current Diode Current T A = 5 C I S.8 a, b -.8 a, b Maximum Power Dissipation T A = 5 C. a, b. a, b P D W T A = 7 C. a, b. a, b Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 Soldering Recommendations (Peak Temperature) d, e 6 C THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ. Max. Typ. Max. Maximum Junction-to-Ambient a, c t 5 s 7 565 7 565 R thja Steady State 56 675 56 675 Notes: a. Surface mounted on " x " FR board. b. t = 5 s. c. Maximum under steady state conditions is 675 C/W. Unit C/W S-33 Rev. B, 3-Oct- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Si6CX SPECIFICATIONS (, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V GS = V, I D = 5 µa N-Ch Drain-Source Breakdown Voltage V DS V GS = V, I D = - 5 µa P-Ch - I D = 5 µa N-Ch 7 V DS Temperature Coefficient V DS /T J I D = - 5 µa P-Ch - I D = 5 µa N-Ch -.8 V GS(th) Temperature Coefficient V GS(th) /T J I D = - 5 µa P-Ch.8 V DS = V GS, I D = 5 µa N-Ch. Gate Threshold Voltage V GS(th) V DS = V GS, I D = - 5 µa P-Ch -. - Gate-Source Leakage I GSS V DS = V, V GS = ±.5 V N-Ch ± P-Ch ± V DS = V, V GS = ± 8 V N-Ch ± 3 P-Ch ± 3 V DS = V, V GS = V N-Ch Zero Gate Voltage Drain Current I DSS V DS = - V, V GS = V P-Ch - V DS = V, V GS = V, T J = 55 C N-Ch V DS = - V, V GS = V, T J = 55 C P-Ch - On-State Drain Current b I D(on) V DS 5 V, V GS =.5 V N-Ch V DS - 5 V, V GS = -.5 V P-Ch -.5 V GS =.5 V, I D =.5 A N-Ch.33.396 V GS = -.5 V, I D = -.35 A P-Ch.63.756 V GS =.5 V, I D =. A N-Ch.38.56 Drain-Source On-State Resistance b R DS(on) V GS = -.5 V, I D = -.35 A P-Ch.865.38 V GS =.8 V, I D =. A N-Ch..56 V GS = -.8 V, I D = -. A P-Ch.. V GS =.5 V, I D =.5 A N-Ch.55.76 V GS = -.5 V, I D = -.5 A P-Ch.6. Forward Transconductance b V DS = V, I D =.5 A N-Ch g fs V DS = - V, I D = - 3.6 A P-Ch Input Capacitance C iss N-Ch 3 N-Channel P-Ch 5 Output Capacitance C oss V DS = V, V GS = V, f = MHz P-Channel N-Ch P-Ch 5 Reverse Transfer Capacitance C rss V DS = - V, V GS = V, f = MHz N-Ch 8 P-Ch Dynamic a V DS = V, V GS =.5 V, I D =.6 A N-Ch.3 Total Gate Charge Q g V DS = - V, V GS = -.5 V, I D = -. A P-Ch.65.5 N-Ch.75. N-Channel P-Ch Gate-Source Charge Q gs V DS = V, V GS =.5 V, I D =.6 A P-Channel N-Ch P-Ch.5. Gate-Drain Charge Q gd V DS = - V, V GS = -.5 V, I D = -. A N-Ch.3 P-Ch.6 Gate Resistance R g f = MHz Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 3 µs, duty cycle %. N-Ch... P-Ch. V mv/ C V µa A S pf nc S-33 Rev. B, 3-Oct- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Si6CX SPECIFICATIONS (, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Dynamic a Turn-On Delay Time t d(on) N-Ch N-Channel P-Ch 9 8 Rise Time t r V DD = V, R L = N-Ch 6 I D.5 A, V GEN =.5 V, R g = P-Ch Turn-Off Delay Time t d(off) P-Channel N-Ch 6 39 V DD = - V, R L = 33.3 P-Ch Fall Time t f I D -.3 A, V GEN = -.5 V, R g = N-Ch P-Ch 8 6 Turn-On Delay Time t d(on) N-Ch N-Channel P-Ch ns Rise Time t r V DD = V, R L = N-Ch 3 I D.5 A, V GEN = 8 V, R g = P-Ch 8 6 P-Channel N-Ch 7 Turn-Off Delay Time t d(off) V DD = - V, R L = 33.3 P-Ch 9 8 Fall Time t f I D -.3 A, V GEN = - 8 V, R g = N-Ch 5 P-Ch 5 Drain-Source Body Diode Characteristics Pulse Diode Forward Current a N-Ch I SM P-Ch -.5 A I S =.5 A, V GS = V N-Ch.85. Body Diode Voltage V SD I S = -.3 A, V GS = V P-Ch -.87 -. V Body Diode Reverse Recovery Time t rr N-Ch P-Ch 6 ns Body Diode Reverse Recovery Charge Q rr N-Channel N-Ch I F =.5 A, di/dt = A/µs, P-Ch 8 nc P-Channel N-Ch 5 Reverse Recovery Fall Time t a I F = -.3 A, di/dt = - A/µs, P-Ch N-Ch 5 Reverse Recovery Rise Time t b P-Ch 5 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 3 µs, duty cycle %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S-33 Rev. B, 3-Oct- 3 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Si6CX N-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted).8.e- I GSS - Gate Current (ma).6.. I GSS - Gate Current (A).E-5.E-6.E-7.E-8 T J = 5 C 6 8 V GS - Gate-Source Voltage (V) Gate Current vs. Gate-Source Voltage.E-9 7 Gate Current vs. Gate-Source Voltage.5.5 V GS = 5 V thru V. V GS =.5 V.5 V GS = V.5.5.3 T C = 5 C.. T C = 5 C T C = - 55 C.3.6.9..5 V DS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics.8 6 V GS =.5 V R DS(on) - On-Resistance (Ω).6. V GS =.8 V V GS =.5 V C - Capacitance (pf) 5 3 5 C iss C oss V GS =.5 V C rss..5.5 On-Resistance vs. Drain Current 5 5 V DS - Drain-to-Source Voltage (V) Capacitance S-33 Rev. B, 3-Oct- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Si6CX N-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) 8.6 6 I D =.6 A V DS = 5 V V DS = V V DS = 6 V R DS(on) -On-Resistance (Normalized)....8 I D =.5 A V GS =.5 V.5.5 Q g - Total Gate Charge (nc) Gate Charge V GS =.5 V.6-5 - 5 5 5 75 5 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature.8 I D =.5 A I S - Source Current (A) T J = 5 C R DS(on) - On-Resistance (Ω).6.....3.6.9..5 V SD - Source-to-Drain Voltage (V) Soure-Drain Diode Forward Voltage 3 5 On-Resistance vs. Gate-to-Source Voltage.75.7.65 I D = 5 μa.5.8 V GS(th) (V).55 Power (W).35.9.5.5.35-5 - 5 5 5 75 5 5.. T J -Temperature ( C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient S-33 Rev. B, 3-Oct- 5 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Si6CX N-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted).. Limited by R DS(on) * BVDSS Limited μs ms ms ms T C = 5 C Single Pulse s s, DC.. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient Power (W).8..6 5 5 75 5 5 T A - Ambient Temperature ( C) Power Derating, Junction-to-Ambient * The power dissipation P D is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Duty Cycle =.5 Normalized Effective Transient Thermal Impedance t. Notes:.. P DM.5. t t. Duty Cycle, D = t. Per Unit Base = R thja =675 C/W 3. T JM -T A =P DM Z (t) thja Single Pulse. Surface Mounted..... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 6 S-33 Rev. B, 3-Oct- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Si6CX P-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted)..e- I GSS - Gate Current (ma).8.6.. I GSS - Gate Current (A).E-5.E-6.E-7 T J = 5 C. 3 6 9 V GS - Gate-Source Voltage (V) Gate Current vs. Gate-Source Voltage.E-8 3 6 9 5 Gate Current vs. Gate-Source Voltage.5 V GS = 5 V thru 3 V V GS =.5 V.8..9.6.3 V GS =.5 V V GS = V.6.. T C = 5 C T C = 5 C.5.5 V DS - Drain-to-Source Voltage (V) T C = - 55 C..8..6 Output Characteristics Transfer Characteristics 9 R DS(on) - On-Resistance (Ω).5.5 V GS =.5 V V GS =.8 V V GS =.5 V V GS =.5 V C - Capacitance (pf) 7 5 36 8 C oss C iss C rss.3.6.9..5 On-Resistance vs. Drain Current 5 5 V DS - Drain-to-Source Voltage (V) Capacitance S-33 Rev. B, 3-Oct- 7 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Si6CX P-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) 8 6 I D =. A V DS = V V DS = 5 V V DS = 6 V R DS(on) -On-Resistance (Normalized).5.3..9 I D =.35 A V GS =.5 V V GS =.5 V.5.9.35.8 Q g - Total Gate Charge (nc) Gate Charge.7-5 - 5 5 5 75 5 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature. I D =.35 A I S - Source Current (A) T J = 5 C R DS(on) - On-Resistance (Ω)..8.6...3.6.9..5 V SD - Source-to-Drain Voltage (V) Soure-Drain Diode Forward Voltage. 3 5 6 7 8 On-Resistance vs. Gate-to-Source Voltage.7.7.6.5.8 V GS(th) (V).5 I D = 5 μa Power (W).35.9..5.3-5 - 5 5 5 75 5 5 T J -Temperature( C) Threshold Voltage.. Time (s) Single Pulse Power, Junction-to-Ambient 8 S-33 Rev. B, 3-Oct- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Si6CX P-CHANNEL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted). Limited by R DS(on) * μs.8.. ms ms ms s s, DC Power (W)..6 T C = 5 C BVDSS Limited Single Pulse.. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient 5 5 75 5 5 T A - Ambient Temperature ( C) Power Derating, Junction-to-Ambient * The power dissipation P D is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Duty Cycle =.5 Normalized Effective Transient Thermal Impedance t. Notes:.. P DM.5. t t. Duty Cycle, D = t. Per Unit Base = R thja =675 C/W 3. T JM -T A =P DM Z (t) thja Single Pulse. Surface Mounted..... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?67535. S-33 Rev. B, 3-Oct- 9 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Package Information 3 E/ A D e ÎÎ ÎÎ ÎÎ ÎÎ ÎÎ ÎÎ 6 5 X aaa E/ C D B ÎÎÎÎÎ ÎÎÎÎÎ C SECTION B-B 6 3 E E X aaa C 5 e ÎÎÎÎÎÎ 3 X bbb C DETAIL A B 6X b ccc M C A B D ÎÎ ÎÎ ÎÎ ÎÎ ÎÎ ÎÎ A L L ÎÎ ÎÎ ÎÎ ÎÎ ÎÎ ÎÎ A ÎÎ ÎÎ ÎÎ A SEE DETAIL A NOTES:. Dimensions in millimeters.. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed.5 mm per dimension E does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed.5 mm per side. 3. 3 Dimensions D and E are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body.. Datums A, B and D to be determined. mm from the lead tip. 5. 5 Terminal numbers are shown for reference only. 6. 6 These dimensions apply to the flat section of the lead between.8 mm and.5 mm from the lead tip. Dim Min Max Note Symbol Tolerances Of Form And Position A.56.6 aaa. A.. bbb. b.5.3 ccc. c..8 D.5.7, 3 E.55.7 E. BSC, 3 e.5 BSC e. BSC L.35 BSC L. BSC ECN: E-99 Rev. B, -Jul- DWG: 588 Document Number: 76 5-Jun-
Application Note 86 RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead.5 (.3).69 (.753).3 (.798).9 (.78). (.3).5 (.). (.5) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 765 Revision: -Jan-8
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