Des MEMS aux NEMS : évolution des technologies et des concepts aux travers des développements menés au LETI

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Des MEMS aux NEMS : évolution des technologies et des concepts aux travers des développements menés au LETI Ph. Robert 1

Content LETI at a glance From MEMS to NEMS: 30 years of technological evolution MEMS/NEMS activity overview 2

Leti at a Glance R&D in Micro & Nano-technologies Applications Driven Technology Transfer Licensing CONSUMER AUTOMOTIVE SPACE & SCIENCE 1 700 employees 1 300 on LETI payroll SECURITY & SAFETY 260 M budget ~ 35 M CapEx ENERGY & ENVIRONMENT INDUSTRY & MEDICAL HEALTHCARE WIRELESS & SMART DEVICES > 275 new patents/year Portfolio > 1,700 patents 33 start-ups 3

Leti svalue Proposition - - Simple policy for IP Outstanding personnel - State-of-the-art research infrastructure Access to existing knowledge through technology platforms Our Mission: Create Innovation and Transfer it to Industry 4

A Complete Set of Research Platforms Nanotec 300 Advanced CMOS 200 MEMS 200 Nanoscale Characterization Integrative Industries Design Integrative Chemistry & Biology Photonics 5

Platforms MEMS 200 > 200 mm MEMS clean room capabilities 6

Content LETI at a glance From MEMS to NEMS: 30 years of technological evolution MEMS/NEMS activity overview 7

30 years background Thin Film Technology (Vacuum deposition through a shadow mask on glass wafer) Transfers Key dates Weight sensor 80 90 00 year 10 20 1981 1980 Hygrometer 8

30 years background Thin Film Technology Bulk Technology (Litho/ wet etching on Si or quartz wafer) 1984 -Comb drive accelero patent Transfers Key dates Weight sensor 80 90 00 Quartz accelerometer year 10 20 Hygrometer 1981 1980 1987 High perf. pressure sensor 1998 13

30 years background Thin Film Technology Bulk Technology 1984 -Comb drive accelero patent Surface Technology (Litho/ DRIE on SOI or bonded wafers) 2010 -Common lab. Transfers Key dates Weight sensor 80 90 00 Quartz accelerometer 1996 Startup creation Pacemaker accelerometer Geophone year 10 20 Inertial platform Hygrometer 1981 1980 1987 1996 Miniature pressure sensor 1996 2005 Far-IR µbolometer 2009 2011 High perf. pressure sensor 1998 18

Transfers Key dates 30 years background Thin Film Technology Weight sensor Bulk Technology 1984 -Comb drive accelero patent Surface Technology 80 90 00 Quartz accelerometer 1996 Startup creation Pacemaker accelerometer Geophone Nano-scale Technology (DUV lithoon thin SOI) Leti/Caltech Alliance - 2007 2010 -Common lab. 2011 Startup creation year 10 20 Inertial platform Hygrometer 1981 1980 1987 1996 Miniature pressure sensor 1996 2005 Far-IR µbolometer M&NEMS platform 2009 2012 2011 High perf. pressure sensor 1998 29

Content LETI at a glance From MEMS to NEMS: 30 years of technological evolution MEMS/NEMS activity overview 31

From MEMS design to system integration 3D integration of heterogeneous functions 3D Integration & Prototyping Electronic Partitioning SD closed loop architectures ASIC manufacturing Physical & electrical charact. Reliability study Characterizations Packaging WLP, thin film cap, 3D Vacuum sealing Techno. Developments MEMS manufacturing MEMS 200 nm AlSi linewidth + K 120 3 η = dkk 4 π f ( r 12 m 2 m 0 0, K, x ) = (1 r d Ω K 12 m 2 r e f ( r 12 m 2 2 x 12 m (1 e ) 2 2, K, x ) r 2 12 m x 2 ) 2 (1 Modelling & Simulation Analytical models Full simulation of MEMS LETI covers all these aspects 32 3

Expertise on Inertial Sensor 3D Gyro Accelerometer Geophone 33

Expertise on pressureand forcesensor Pressure sensor 560 µm cmut 3D Force sensor 34

Expertise on Nano-Scale Sensors & Co-integration NEMS L= 1.6µm - ø~10nm 100 MHz / Q=40 000 CMOS Co-integration Nano gap (80nm) 35

Expertise on Bio-Chemical MEMS based Sensors µ-tof Mass-spec for NRBC gas detection Mass range targeted : 1Da 1.5 kda (1 Da=1.6x10-24 g) NEMS-based chemical sensor Mass-spec for Biology applications Photo-acoustic chemical sensor Mass range targeted : 100 kda to 10 GDa (1 kda = 1.6x10-21 g) 1 nano particle (400 kda) detected 36

Expertise on Spintronics& MagneticSensors z Above-IC GMR current sensors contact y x Free layer Pinned layer H Current line Yoke width w Thickness of free layer t Magnetic Tunnel Junction (TMR, MRAM) 110nm MEMS Magnetometer 37

NEMS sensors platform Generic sensor platform based on resonantnems array detectors High efficiency patented NEMS resonator using : Electrostatic actuation Piezoresistive silicon nano-wire gauge Very high SNR Not sensitive to parasitic Suitable for high frequency application Low power consumption Well controlled technology compatible with DUV lithography Gas detection Mass-spec for Bio applications µbolometer Cellular force sensor 38

M&NEMS sensors platform Miniaturized sensors Generic platform sensors fusion + 1 common electronic MEMS size inertial mass + Nano-size piezoresistive gauge Not sensitive to parasitics An approach for low-power consumption + 15 patents 3D Accelero 3D gyro 3D magneto Microphone & Pressure sens. 39