Dual P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) - 3 R DS(on) () at V GS = - V.4 R DS(on) () at V GS = - 4.5 V.78 I D (A) per leg -5.4 Configuration Dual FEATURES TrenchFET Power MOSFET AEC-Q Qualified c % R g and UIS Tested SO-8 S S S 8 D G 7 D S 3 D G 4 5 D G G Top View D P-Channel MOSFET D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T C = 5 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 3 Gate-Source Voltage V GS ± V Continuous Drain Current T C = 5 C - 5.4 I D T C = 5 C - 3.8 Continuous Source Current (Diode Conduction) I S - 3 A Pulsed Drain Current a I DM - Single Pulse Avalanche Current I AS - 7 L =. mh Single Pulse Avalanche Energy E AS 4 mj T Maximum Power Dissipation a C = 5 C 3.3 P D T C = 5 C. W Operating Junction and Storage Temperature Range T J, T stg - 55 to + 75 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount b R thja Junction-to-Foot (Drain) R thjf 45 Notes a. Pulse test; pulse width 3 μs, duty cycle %. b. When mounted on " square PCB (FR-4 material). c. Parametric verification ongoing. C/W
Zero Gate Voltage Drain Current I DSS SPECIFICATIONS (T C = 5 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS V GS = V, I D = - 5 μa - 3 - - Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = - 5 μa -.5 -. -.5 V Gate-Source Leakage I GSS V DS = V, V GS = ± V - - ± na V GS = V V DS = - 3 V, T J = 5 C - - - 5 μa V GS = V V DS = - 3 V - - - V GS = V V DS = - 3 V, T J = 75 C - - - 5 On-State Drain Current a I D(on) V GS = - V V DS - 5 V - - - A V GS = - V I D = - 4.9 A -.35.45 Drain-Source On-State Resistance a R DS(on) V GS = - V I D = - 4.9 A, T J = 5 C - -. V GS = - V I D = - 4.9 A, T J = 75 C - -.7 V GS = - 4.5 V I D = - 3.7 A -.5.78 Forward Transconductance b g fs V DS = - 5 V, I D = - 4.9 A - 9 - S Dynamic b Input Capacitance C iss - 557 7 Output Capacitance C oss V GS = V V DS = - 5 V, f = MHz - 9 pf Reverse Transfer Capacitance C rss - 9 5 Total Gate Charge c Q g - 5 Gate-Source Charge c Q gs V GS = - V V DS = - 5 V, I D = - 4.9 A -. nc Gate-Drain Charge c Q gd - 3.5 - Gate Resistance R g f = MHz. 5. 8.5 Turn-On Delay Time c t d(on) - 3 5 Rise Time c t r V DD = - 5 V, R L =.8-9 4 Turn-Off Delay Time c t d(off) I D - A, V GEN = - V, R g = - 3 ns Fall Time c t f - 9 4 Source-Drain Diode Ratings and Characteristics b Pulsed Current a I SM - - - A Forward Voltage V SD I F = - A, V GS = V - -.8 -. V Notes a. Pulse test; pulse width 3 μs, duty cycle %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted) 3 V GS = V thru V 3 T = 5 C C 4 V GS = 5 V 4 I D - Drain Current (A) 8 V GS = 4 V I D - Drain Current (A) 8 V GS = 3 V 4 8 V DS -Drain-to-Source Voltage (V) T C = 5 C T C = - 55 C 4 8 V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics.5 8. I D - Drain Current (A) 4 T C = 5 C T C = 5 C T C = - 55 C R DS(on) -On-Resistance (Ω).9..3 V GS = 4.5 V V GS = V 3 4 5 V GS - Gate-to-Source Voltage (V) Transfer Characteristics. 8 4 3 I D -Drain Current (A) On-Resistance vs. Drain Current C - Capacitance (pf) 8 4 C iss C oss V GS - Gate-to-Source Voltage (V) 8 4 I D = 4.9 A V DS = 5 V C rss 5 5 5 3 V DS -Drain-to-Source Voltage (V) Capacitance 3 9 5 Q g -Total Gate Charge (nc) Gate Charge 3
TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted). R DS(on) -On-Resistance (Normalized).7.4..8 I D = 4.9 A V GS = V V GS = 4.5 V I S - Source Current (A).. T J = 5 C T J = 5 C.5-5 - 5 5 5 75 5 5 75 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature....4..8.. V SD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage.5...7 I D = 5 μa R DS(on) -On-Resistance (Ω).5..5 T J = 5 C T J = 5 C V GS(th) Variance (V).4. -. I D = 5 ma. 4 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage -.5-5 - 5 5 5 75 5 5 75 T J -Temperature( C) Threshold Voltage -3 V DS -Drain-to-Source Voltage (V) -3-34 -3-38 I D = ma -4-5 - 5 5 5 75 5 5 75 T J - Junction Temperature ( C) Drain Source Breakdown vs. Junction Temperature 4
THERMAL RATINGS (T A = 5 C, unless otherwise noted) I DM Limited I D - Drain Current (A). T C = 5 C Single Pulse Limited by R DS(on) * BVDSS Limited μs ms ms ms s s, DC... V DS -Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance Duty Cycle =.5. Notes:.. P DM.5 t t t. Duty Cycle, D =. t. Per Unit Base = R thja = C/W 3. T JM - T A = P DM Z (t) thja Single Pulse 4. Surface Mounted. - 4-3 - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 5
THERMAL RATINGS (T A = 5 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance. Duty Cycle =.5...5. Single Pulse. -4-3 - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (5 C) - Normalized Transient Thermal Impedance Junction-to-Foot (5 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size " x " x.", double sided with oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.
Package Information SOIC (NARROW): 8-LEAD JEDEC Part Number: MS- 8 7 5 E H 3 4 S D A.5 mm (Gage Plane) h x 45 C All Leads e B A L q. mm.4" DIM MILLIMETERS INCHES Min Max Min Max A.35.75.53.9 A...4.8 B.35.5.4. C.9.5.75. D 4.8 5..89.9 E 3.8 4..5.57 e.7 BSC.5 BSC H 5.8..8.44 h.5.5.. L.5.93..37 q 8 8 S.44.4.8. ECN: C-57-Rev. I, -Sep- DWG: 5498
Application Note RECOMMENDED MINIMUM PADS FOR SO-8.7 (4.39).8 (.7) APPLICATION NOTE.47 (.94).4 (.48).5 (3.8). (.559).5 (.7) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index
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